CN-122028481-A - Semiconductor device and manufacturing method thereof

Abstract

The present application provides a semiconductor device and a method of manufacturing the same, the semiconductor device including a substrate; the semiconductor device comprises a substrate, a buffer layer, a channel layer, a barrier layer, a diffusion barrier layer and a P-GaN layer, wherein the buffer layer is positioned on the substrate, the channel layer is positioned on the buffer layer, the barrier layer is positioned on the channel layer, the diffusion barrier layer is positioned on the barrier layer and comprises an AlGaN layer with gradually changed components or an AlInGaN layer with gradually changed components, and/or a GaN superlattice layer without doping/doping Mg, and the P-GaN layer is positioned on the diffusion barrier layer. According to the scheme, the diffusion barrier layer is formed between the barrier layer and the P-GaN layer, so that the barrier height can be increased, mg in the P-GaN layer is prevented from diffusing to the two-dimensional electron gas, and the grid electrode leakage of the device is reduced.

Inventors

• ZHAI XIAOLIN
• WANG MINRUI
• HU ZHIHAO
• WANG GUIJI

Assignees

• 无锡华润微电子有限公司

Dates

Publication Date

20260512

Application Date

20241108

Claims (10)

1. 1. A semiconductor device, comprising: A substrate; a buffer layer on the substrate; a channel layer on the buffer layer; a barrier layer on the channel layer; The diffusion barrier layer is positioned on the barrier layer and comprises an AlGaN layer with gradually changed components or an AlInGaN layer with gradually changed components and/or a GaN superlattice layer without doping/doping Mg; And the P-GaN layer is positioned on the diffusion barrier layer.
2. 2. The semiconductor device of claim 1, wherein when the diffusion barrier layer comprises the compositionally graded AlGaN layer or the compositionally graded AlInGaN layer and a GaN superlattice layer comprising the undoped/doped Mg, the compositionally graded AlGaN layer or the compositionally graded AlInGaN layer is located between the barrier layer and the undoped/doped Mg GaN superlattice layer.
3. 3. The semiconductor device according to claim 1, wherein Al composition in the compositionally graded AlGaN layer or the compositionally graded AlInGaN layer gradually decreases in a direction along the barrier layer toward the P-GaN layer.
4. 4. The semiconductor device according to claim 3, wherein an Al composition in the compositionally graded AlGaN layer or the compositionally graded AlInGaN layer decreases from 0.25 to 0.02 in a direction along the barrier layer toward the P-GaN layer.
5. 5. The semiconductor device according to claim 1, wherein a thickness of the compositionally graded AlGaN layer or the compositionally graded AlInGaN layer ranges from 1nm to 10nm; The thickness range of each undoped Mg GaN layer in the undoped/Mg-doped GaN superlattice layer is 2nm-10nm, and the thickness range of each doped Mg GaN layer is 3nm-10nm.
6. 6. The semiconductor device according to claim 1, wherein a doping concentration of Mg in each of the Mg-doped GaN layers in the undoped/Mg-doped GaN superlattice layer is in a range of 5E18atoms/cm 3 -3E19 atoms/cm 3 , and/or, The alternating period of the undoped/Mg-doped GaN superlattice layer ranges from 2 to 10.
7. 7. The semiconductor device according to claim 1, further comprising: A stress release layer on the buffer layer; a high resistance layer on the stress release layer, the channel layer being on the high resistance layer; and an insertion layer on the channel layer, and the barrier layer is on the insertion layer.
8. 8. A method of manufacturing a semiconductor device, the method comprising: Providing a substrate; Forming a buffer layer on the substrate; Forming a channel layer on the buffer layer; forming a barrier layer on the channel layer; Forming a diffusion barrier layer on the barrier layer, wherein the diffusion barrier layer comprises an AlGaN layer with gradually changed components or an AlInGaN layer with gradually changed components and/or a GaN superlattice layer without doping/doping Mg; and forming a P-GaN layer on the diffusion barrier layer.
9. 9. The method of claim 8, wherein the graded AlGaN layer or the graded AlInGaN layer is grown in a MOCVD reactor, wherein the carrier gas is N2, H2 or a N2/H2 mixture, the growth temperature is 1020 ℃ to 1080 ℃, and the growth pressure is 30mbar to 150mbar.
10. 10. The method of claim 8, wherein the undoped/Mg doped GaN superlattice layer is grown in a MOCVD reactor, wherein the carrier gas is N2, H2 or N2/H2 mixed gas, the growth temperature is 900 ℃ to 1200 ℃, and the growth pressure is 200mbar to 600mbar.

Description

Semiconductor device and manufacturing method thereof Technical Field The application relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background The high electron mobility transistor (High electron mobility transistor, HEMT) is one of field effect transistors, the enhancement HEMT generally comprises a substrate, a GaN channel layer, an AlGaN barrier layer and a P-GaN layer, in the hetero structure of the GaN channel layer/AlGaN barrier layer, stress is generated at an interface due to different lattice constants of two materials, the stress causes polarization effect, and further high-concentration two-dimensional electron gas (2 DEG) is formed near the interface, and the energy band structure at the hetero junction of the GaN channel layer/AlGaN barrier layer is regulated through the P-GaN layer so as to deplete the two-dimensional electron gas, and when a certain bias voltage is applied to the P-GaN layer, the two-dimensional electron gas reappears, thereby realizing enhancement performance of the device. Wherein, the P-GaN layer needs to be doped with Mg in the epitaxial growth process, and in a high threshold voltage device, the P-GaN layer needs to be doped with Mg with higher concentration. However, too high a Mg doping concentration can cause Mg to diffuse easily at high temperatures to the two-dimensional electron gas, causing increased gate leakage of the device, and thus device failure. Disclosure of Invention In the summary, a series of concepts in a simplified form are introduced, which will be further described in detail in the detailed description. The summary of the application is not intended to define the key features and essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter. To at least partially solve the above technical problem, an aspect of the present application provides a semiconductor device, including: A substrate; a buffer layer on the substrate; a channel layer on the buffer layer; a barrier layer on the channel layer; The diffusion barrier layer is positioned on the barrier layer and comprises an AlGaN layer with gradually changed components or an AlInGaN layer with gradually changed components and/or a GaN superlattice layer without doping/doping Mg; And the P-GaN layer is positioned on the diffusion barrier layer. Illustratively, when the diffusion barrier layer includes the compositionally graded AlGaN layer or the compositionally graded AlInGaN layer and a GaN superlattice layer including the undoped/doped Mg, the compositionally graded AlGaN layer or the compositionally graded AlInGaN layer is located between the barrier layer and the undoped/doped Mg GaN superlattice layer. Illustratively, the Al composition in the compositionally graded AlGaN layer or the compositionally graded AlInGaN layer gradually decreases in a direction along the barrier layer toward the P-GaN layer. Illustratively, the Al composition in the compositionally graded AlGaN layer or the compositionally graded AlInGaN layer decreases from 0.25 to 0.02 in a direction along the barrier layer toward the P-GaN layer. Illustratively, the compositionally graded AlGaN layer or the compositionally graded AlInGaN layer has a thickness in the range of 1nm to 10nm; The thickness range of each undoped Mg GaN layer in the undoped/Mg-doped GaN superlattice layer is 2nm-10nm, and the thickness range of each doped Mg GaN layer is 3nm-10nm. Illustratively, the Mg doping concentration in each of the undoped/Mg doped GaN superlattice layers is in the range of 5E18atoms/cm 3-3E19atoms/cm3, and/or, The alternating period of the undoped/Mg-doped GaN superlattice layer ranges from 2 to 10. Illustratively, the method further comprises: A stress release layer on the buffer layer; a high resistance layer on the stress release layer, the channel layer being on the high resistance layer; and an insertion layer on the channel layer, and the barrier layer is on the insertion layer. Another aspect of the present application provides a method of manufacturing a semiconductor device, comprising: Providing a substrate; Forming a buffer layer on the substrate; Forming a channel layer on the buffer layer; forming a barrier layer on the channel layer; Forming a diffusion barrier layer on the barrier layer, wherein the diffusion barrier layer comprises an AlGaN layer with gradually changed components or an AlInGaN layer with gradually changed components and/or a GaN superlattice layer without doping/doping Mg; and forming a P-GaN layer on the diffusion barrier layer. Illustratively, the compositionally graded AlGaN layer or the compositionally graded AlInGaN layer is grown in a MOCVD reaction chamber, wherein the carrier gas is N2, H2 or a N2/H2 mixture, the growth temperature is 1020 ℃ to 1080 ℃, and the growth pressure is 30mbar to 150mbar. Illustratively, the undoped/Mg d