CN-122028488-A - Power device, stacking structure of power device and preparation method of stacking structure

CN122028488ACN 122028488 ACN122028488 ACN 122028488ACN-122028488-A

Abstract

The application relates to a power device, a stacking structure of the power device and a preparation method of the stacking structure. The stacking structure of the power device comprises a first power chip and a second power chip which are sequentially stacked, wherein a drain electrode of the first power chip is connected with a direct current positive electrode through a first connecting component, a source electrode of the first power chip is connected with an alternating current electrode through a second connecting component, a drain electrode of the second power chip is connected with the alternating current electrode through a second connecting component, a source electrode of the second power chip is connected with a direct current negative electrode, a grid electrode of the first power chip is used for being connected with a first driving end of a driving circuit, and a grid electrode of the second power chip is used for being connected with a second driving end of the driving circuit.

Inventors

FENG WEIJIAN
CUI XIAO
Yan Pengxiu
WANG QIN
SHEN XIAOWEN
ZHONG PEI

Assignees

广东芯聚能半导体有限公司

Dates

Publication Date: 20260512
Application Date: 20260414

Claims (10)

1. A stacking structure of a power device is characterized by comprising a first power chip and a second power chip which are sequentially stacked; The drain electrode of the first power chip is connected with the direct current positive electrode through a first connecting component, and the source electrode of the first power chip is connected with the alternating current electrode through a second connecting component; The drain electrode of the second power chip is connected with the alternating current electrode through the second connecting component, and the source electrode of the second power chip is connected with the direct current negative electrode; The grid electrode of the first power chip is used for being connected with the first driving end of the driving circuit, and the grid electrode of the second power chip is used for being connected with the second driving end of the driving circuit.
2. The stacked structure of a power device of claim 1, wherein the first connection member is a copper clip and/or the second connection member is a copper clip.
3. The stacked structure of the power device according to claim 1, wherein the first connection member, the first power chip, the second connection member, the second power chip, and the direct current negative electrode are sequentially stacked, and the direct current positive electrode and the alternating current electrode are distributed on both sides of the direct current negative electrode.
4. The stacked structure of the power device of claim 1, wherein a projection of the second power chip onto the first power chip covers the first power chip in a case where an area of the first power chip is smaller than or equal to an area of the second power chip.
5. The stacked structure of power devices of claim 1, wherein the first power chip is soldered with the first connection member and the first power chip is soldered with the second connection member; The second power chip is welded with the second connecting component, and the second power chip is welded with the direct current negative electrode; The first connecting part is welded with the direct-current positive electrode, and the second connecting part is welded with the alternating-current electrode.
6. The stacked structure of a power device of claim 1, further comprising: The packaging layer packages the first power chip, the second power chip, the first connecting component, the second connecting component, the direct-current positive electrode, the direct-current negative electrode and the alternating-current electrode, and the direct-current positive electrode, the direct-current negative electrode and the alternating-current electrode are partially exposed.
7. A power device comprising a driving circuit and a stacked structure of the power device according to any one of claims 1 to 6.
8. The power device of claim 7, wherein an encapsulation layer encapsulates the stacked structure of the power device and the drive circuit.
9. A method for manufacturing a stacked structure of a power device, the method comprising: preparing a first power chip, a second power chip, a direct current positive electrode, a direct current negative electrode, an alternating current electrode, a first connecting component and a second connecting component; the second power chip is inversely arranged on the direct-current negative electrode, so that a source electrode of the second power chip is arranged on the direct-current negative electrode; placing a first end of the second connection member on a drain electrode of the second power chip and a second end of the second connection member on the alternating current electrode; Flip-chip the first power chip on the first end of the second connecting component, so that the source electrode of the first power chip is placed on the first end of the second connecting component; and placing the first end of the first connecting component on the drain electrode of the first power chip, and placing the second end of the first connecting component on the direct current positive electrode to obtain the power device.
10. The method according to claim 9, wherein the method further comprises: Before the step of flip-chip mounting the second power chip on the direct current negative electrode, coating a welding material on the lead frame area where the direct current negative electrode is positioned; before the step of placing the first end of the second connection member on the drain electrode of the second power chip, coating a solder material on the first end of the second connection member and the lead frame region where the ac electrode is located; Before the step of placing the first end of the first connection member on the drain electrode of the first power chip, coating a solder material on the lead frame region where the direct current positive electrode is located; after the step of placing the second end of the first connection member on the dc positive electrode, reflow soldering is performed.

Description

Power device, stacking structure of power device and preparation method of stacking structure Technical Field The application relates to the technical field of power devices, in particular to a power device, a stacking structure of the power device and a preparation method of the stacking structure. Background Currently, electronic power systems are applied to various industries, and the realization of high-efficiency conversion of the electronic power systems depends on the power density of the electronic power systems, but in the conventional technology, the mode of improving the power density generally adopts the size of compressed components, so that more components are put in or the system volume is reduced, and the performance improvement space is limited. Disclosure of Invention Based on this, it is necessary to provide a power device of a miniaturized design, a stacked structure of the power device, and a method of manufacturing the same. In a first aspect, a stacked structure of a power device is provided, including a first power chip and a second power chip stacked in sequence; the drain electrode of the first power chip is connected with the direct current positive electrode through the first connecting component, and the source electrode of the first power chip is connected with the alternating current electrode through the second connecting component; The drain electrode of the second power chip is connected with the alternating current electrode through the second connecting component, and the source electrode of the second power chip is connected with the direct current negative electrode; the grid electrode of the first power chip is used for being connected with the first driving end of the driving circuit, and the grid electrode of the second power chip is used for being connected with the second driving end of the driving circuit. In one embodiment, the first connection part is a copper clip and/or the second connection part is a copper clip. In one embodiment, the first connection part, the first power chip, the second connection part, the second power chip, and the direct current negative electrode are sequentially stacked, and the direct current positive electrode and the alternating current electrode are distributed on both sides of the direct current negative electrode. In one embodiment, where the area of the first power chip is less than or equal to the area of the second power chip, the projection of the second power chip onto the first power chip covers the first power chip. In one embodiment, the first power chip is soldered to the first connection member and the first power chip is soldered to the second connection member; The second power chip is welded with the second connecting component, and the second power chip is welded with the direct current negative electrode; The first connecting part is welded with the direct current positive electrode, and the second connecting part is welded with the alternating current electrode. In one embodiment, the stacked structure of the power device further includes: The packaging layer packages the first power chip, the second power chip, the first connecting component, the second connecting component, the direct current positive electrode, the direct current negative electrode and the alternating current electrode, and the direct current positive electrode, the direct current negative electrode and the alternating current electrode are partially exposed. In a second aspect, a power device is provided, which includes a driving circuit and the stacked structure of the power device. In one embodiment, the encapsulation layer encapsulates the stacked structure and the drive circuit of the power device. In a third aspect, a method for manufacturing a stacked structure of a power device is provided, including: preparing a first power chip, a second power chip, a direct current positive electrode, a direct current negative electrode, an alternating current electrode, a first connecting component and a second connecting component; The second power chip is inversely arranged on the direct current negative electrode, so that a source electrode of the second power chip is arranged on the direct current negative electrode; Placing a first end of the second connection member on the drain electrode of the second power chip and placing a second end of the second connection member on the alternating current electrode; the first power chip is reversely arranged on the first end of the second connecting component, so that the source electrode of the first power chip is arranged on the first end of the second connecting component; And placing the first end of the first connecting component on the drain electrode of the first power chip, and placing the second end of the first connecting component on the direct current positive electrode to obtain the power device. In one embodiment, the method for manufacturing the stacked structure of the power device fur