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CN-122028489-A - Multifunctional integrated DIP-24 appearance intelligent power module

CN122028489ACN 122028489 ACN122028489 ACN 122028489ACN-122028489-A

Abstract

The invention belongs to the technical field of semiconductors, and discloses a multifunctional integrated DIP-24 outline intelligent power module, wherein a packaging structure of the multifunctional integrated DIP-24 outline intelligent power module comprises a lead frame, a plastic package body and semiconductor chips, the lead frame is provided with second to twenty-fifth pins, at least one BSD chip, one IC chip, 6 IGBT chips and 6 FRD chips are integrated, and the IGBTs and the FRDs are arranged in a one-to-one correspondence and paired manner. The BSD chip is connected with the second to twelfth pins and the first three IGBTs, the IC chip is connected with the thirteenth to twentieth pins and the last three IGBTs, the back of each chip is welded on the lead frame, and the bonding wires are in layered staggered layout. The invention realizes high integration in DIP-24 limited space, solves the problems of signal interference, large parasitic parameters and the like, improves the reliability, heat dissipation performance and electromagnetic interference resistance of the module, and adapts to the requirements of multiple power scenes.

Inventors

  • SUN ZHENHUA
  • GAO WANFU
  • WANG YU
  • GUAN JUN

Assignees

  • 吉林华微斯帕克电气有限公司

Dates

Publication Date
20260512
Application Date
20260224

Claims (10)

  1. 1. An IPM power module with DIP-24 appearance is characterized in that, The power chip comprises a lead frame, a plastic package body, a power chip unit and a control chip unit, wherein the power chip unit and the control chip unit are arranged on the lead frame; the lead frame forms a second pin to a twenty-fifth pin; The power chip unit comprises six IGBT chips and six FRD chips which are arranged in one-to-one correspondence with the IGBT chips; The control chip unit at least comprises a BSD chip and an IC chip; Wherein, the The BSD chip is electrically connected with the second pin to the twelfth pin and the first IGBT chip to the third IGBT chip through the first group of bonding wires at the same time, and is used for realizing driving and protection control of the upper bridge arm power unit; the IC chip is simultaneously electrically connected with the thirteenth pin to the twentieth pin and the fourth to the sixth IGBT chips through a second group of bonding wires and is used for realizing the driving and logic control of the lower bridge arm power unit; Each IGBT chip forms a complete power conduction and freewheel passage with the corresponding FRD chip and at least one functional pin through a bonding wire; the back of each chip is fixed on the lead frame and is integrally packaged by the plastic package body to form a DIP-24 packaging structure, Thus realizing the zonal mapping and the cooperative work of the power loop and the control loop under the condition of limited pin number.
  2. 2. The IPM power module of claim 1, wherein, The BSD chips are respectively fixed at different positions of the lead frame, and are respectively and electrically connected with the corresponding pin group and IGBT chip through mutually independent bonding wire networks so as to form a distributed driving and redundancy protection mechanism.
  3. 3. The IPM power module of claim 1, wherein, The IC chips are two or more, different IC chips respectively correspond to different pin sets and different IGBT chip sets and are used for realizing the function sharing and the load separation of control logic.
  4. 4. The IPM power module of claim 1, wherein, The IGBT chips and the corresponding FRD chips are arranged in pairs on the lead frame in an adjacent mode, so that a power conduction path and a follow current path form a shortest closed loop in space, and parasitic inductance is reduced.
  5. 5. A power driving system, characterized in that, Comprising an external control unit, an IPM power module according to any one of claims 1-4; The external control unit provides control signals to the control chip unit through the second pin to the twenty-fifth pin of the IPM power module; The control chip unit respectively carries out driving and protection control on the IGBT chips of the upper bridge arm and the lower bridge arm according to the pin partition mapping relation; the power chip unit completes multiphase power output under the synergistic effect of the control chip unit, Thereby realizing a high-integration power driving system under DIP-24 packaging conditions.
  6. 6. The power driving system of claim 5, wherein, The power driving system is used for three-phase inversion output in motor driving, variable frequency control or power conversion application scenes.
  7. 7. The power driving system of claim 5, wherein, The power loop and the control loop in the IPM power module are in a layered wiring structure in the plastic package, so that the control loop is far away from the high-current change node.
  8. 8. The packaging and connecting method of the DIP-24 outline IPM power module is characterized by comprising the following steps of: Fixing six IGBT chips and six FRD chips corresponding to the six IGBT chips one by one to a power chip area of a lead frame; Fixing at least one BSD chip and at least one IC chip to a control chip area of the lead frame; electrically connecting the BSD chip with the second pin to the twelfth pin and the first to the third IGBT chips respectively through the first bonding wire group; electrically connecting the IC chip with the thirteenth pin to the twentieth pin and the fourth to the sixth IGBT chips respectively through the second bonding wire group; Each IGBT chip is connected with the corresponding FRD chip and the corresponding functional pin in a bonding way to form a complete power loop; and (5) performing plastic packaging on the lead frame which is bonded to obtain the DIP-24-shaped IPM power module.
  9. 9. The method of claim 8, wherein, In the bonding process, the length of the bonding wire of the power loop is made to be less than or equal to 5mm so as to reduce parasitic parameters of the power loop.
  10. 10. The method of claim 8, wherein the control loop bond wires are shielded from the power loop high current variation region by providing a spatial isolation structure of the chip region and the lead region on the leadframe.

Description

Multifunctional integrated DIP-24 appearance intelligent power module Technical Field The invention belongs to the technical field of semiconductors, and particularly relates to a multifunctional integrated DIP-24-shaped intelligent power module. Background The power semiconductor device is mainly used for realizing conversion, regulation and control of electric energy, is a key functional unit in a power electronic system, and is widely applied to the fields of industrial automation, electric drive, household appliances, new energy equipment, transportation and the like. A typical power electronic system is generally composed of a power source side, a power conversion unit and a load side, and a power semiconductor device controls voltage, current and power flow direction to realize efficient transmission and modulation of electric energy from the power source to the load, so that performance and packaging form of the power semiconductor device directly affect safety, reliability and integration degree of the system. With the development of application scenes to higher voltage levels and higher power densities, a single power chip has difficulty in meeting the requirements of a system for multi-path power control, drive management and protection function integration. Fully-controlled power devices, such as IGBTs, have become the mainstay of choice for medium-high power applications because of their high voltage endurance and good switching characteristics. However, in practical applications, IGBT devices are usually required to work together with anti-parallel freewheeling diodes, driving circuits, and protection circuits, which puts higher demands on chip layout, interconnect structures, and pin assignment inside the package. In the prior art, US9041183B2 discloses a double-sided cooling power module packaging structure, in the scheme, an IGBT bare chip and a diode bare chip are arranged in pairs, and the chips are clamped by upper and lower layers of direct copper-clad substrates, so that double-sided heat dissipation of the power chip is realized. The technology is mainly used for optimizing the heat dissipation path and the heat management efficiency of the power device, and is suitable for the high-efficiency cooling requirement of the power switch unit. However, the packaging structure of the prior proposal is mainly unfolded around the power switch unit of a single pair of IGBT and diode, the function level is concentrated on the power level, and the inside of the module does not relate to the collaborative integration design of the function units such as a driving chip, a control chip and the like. The structural characteristics determine that the scheme is more suitable for the low-complexity power module form, and the collaborative layout and interconnection of a plurality of IGBTs, a plurality of freewheel diodes and a driving and managing chip are difficult to realize in the same package. Meanwhile, the scheme relies on an upper substrate clamping structure and a lower substrate clamping structure to realize electric connection and heat dissipation, a solving path is not provided for the problem of complex interconnection among multiple chips through a bonding wire network under the condition of a single lead frame, and functional mapping and partition management of pin resources under the standardized and small-size packaging form are not considered. Therefore, in the application scenario where high functional density and high integration power modules are required to be implemented in a limited number of pins and package volume, the prior art still has the problem of obvious insufficient structural adaptation and limited integration capability. Disclosure of Invention Aiming at the problems existing in the prior art, the invention provides a multifunctional integrated DIP-24 appearance intelligent power module. The invention discloses a multifunctional integrated DIP-24 outline intelligent power module, which is characterized in that the packaging structure comprises a lead frame, a plastic package body and a plurality of semiconductor chips, and is characterized in that the packaging structure comprises a second pin, a third pin, a fourth pin, a fifth pin, a sixth pin, a seventh pin, a eighth pin, a seventh pin, a twelfth pin, a first IGBT chip, a second IGBT chip, a third IGBT chip, a fourth IGBT chip, a sixth IGBT chip, an IC chip, and a bonding wire. Each basic module comprises a BSD chip, an IC chip, 6 IGBT chips and 6 FRD chips, and the back surfaces of all the semiconductor chips are welded on the lead frame. Furthermore, the number of the BSD chips and the IC chips can be set to one or more according to the power requirement, and the plurality of chips are respectively connected with the corresponding pins and the IGBT chips through independent bonding wire networks. Further, in the package structure, the back surface of the IGBT semiconductor chip is soldered on the lead frame, and t