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CN-122028510-A - High-voltage 1064nm InGaAs laser battery

CN122028510ACN 122028510 ACN122028510 ACN 122028510ACN-122028510-A

Abstract

The invention discloses a high-voltage 1064nm InGaAs laser battery, an epitaxial structure of which comprises a substrate, and a GaAs buffer layer, an AlGaAs tunneling junction, an AlGaInAs gradual change layer, an N-1 junction GaInAs sub-battery, an N-1 layer GaInP window layer, an N junction GaInAs sub-battery, an N layer GaInP window layer and a GaInAs cap layer which are sequentially arranged on the substrate, wherein a layer of GaInP window layer and a layer of AlGaInAs tunnel junction are arranged between two adjacent GaInAs sub-batteries from bottom to top in the first junction GaInAs sub-battery to the N-1 junction GaInAs sub-battery, and when N is not smaller than 9, the open circuit voltage of the laser battery can reach more than 7V. According to the invention, a 1064nm laser cell which grows GaInAs material on a GaAs substrate by utilizing an AlGaInAs buffer layer with an In component gradually changed is superior to a multi-junction 808nm laser cell.

Inventors

  • WAN RONGHUA
  • GUO HONGLIANG
  • ZHANG BAO
  • YAO LIYONG
  • MIAO YULU

Assignees

  • 天津蓝天太阳科技有限公司

Dates

Publication Date
20260512
Application Date
20251229

Claims (10)

  1. 1. The high-voltage 1064nm InGaAs laser battery is characterized in that an epitaxial structure of the laser battery comprises a substrate, and a GaAs buffer layer, an AlGaAs tunneling junction, an AlGaInAs graded layer, an N-1 junction GaInAs subcell, an N-1 layer GaInP window layer, an N junction GaInAs subcell, an N layer GaInP window layer and a GaInAs cap layer which are sequentially arranged on the substrate, wherein a layer of GaInP window layer and a layer of AlGaInAs tunnel junction are arranged between two adjacent GaInAs subcells from bottom to top in the first junction GaInAs subcell to the N-1 junction GaInAs subcell, and when N is not smaller than 9, the open-circuit voltage of the laser battery can reach more than 7V.
  2. 2. The laser cell of claim 1 wherein the AlGaInAs tunnel junction comprises an n-doped n+ - (Al c Ga 1-c ) 1-x In x As layer and a p-doped p+ - (Al c Ga 1-c ) 1-x In x As layer, wherein 0≤c≤0.5 and 0≤x≤0.5, the n+ - (Al c Ga 1-c ) 1-x In x As layer and the p+ - (Al c Ga 1-c ) 1-x In x As layer each having a doping concentration of 1X 10 19 -1×10 21 cm -3 and a thickness of 1-100nm, the AlGaInAs tunnel junction grown compositionally graded on GaAs substrate material by variation In content therein.
  3. 3. The laser battery of claim 1, wherein the AlGaInAs graded layer grows in a component graded manner to achieve growth with a target lattice constant, and the p-type doped AlGaInAs graded layer has a doping concentration of 1 x 10 17 ~1×10 19 cm -3 and a thickness of 50nm to 500nm.
  4. 4. The laser cell of claim 1 wherein the GaInAs subcell includes an n-type doped n-GaInP emitter region and a p-type doped p-GaInAs base region, or an n-type doped n-GaInAs emitter region and a p-type doped p-GaInAs base region.
  5. 5. The laser cell of claim 1, wherein the first junction GaInAs subcell or the N-th junction GaInAs subcell has a thickness of 30-3000nm and a total doping concentration of 1 x 10 16 -1×10 19 cm -3 .
  6. 6. The laser cell of claim 1 wherein the first junction GaInAs subcell or the second junction GaInAs subcell is a Ga 1-x In x As cell comprising an n-type doped n-Ga 1-x In x As emitter layer and a p-type doped p-Ga 1-x In x As base layer, where 0.19 +.x +.0.3.
  7. 7. The laser cell of claim 6 wherein the dopant of the n-Ga 1-x In x As emitter layer is Si, se or Te with a doping concentration of 1 x 10 16 -1×10 18 cm -3 and a thickness of 50-300nm, and the dopant of the p-Ga 1-x In x As base layer is Zn, mg or C with a doping concentration of 1 x 10 17 -1×10 19 cm -3 and a thickness of 30-3000nm.
  8. 8. The laser cell of claim 1, wherein the thickness of all layers of the epitaxial structure of the laser cell is obtained by the following formula: Wherein I 0 is the light intensity of the surface of the laser battery, x is the transmission depth of incident laser, I is the light intensity of the incident laser transmitted to x, and alpha (λ) is the absorption coefficient of the absorption region material GaInAs sub-battery at the wavelength lambda.
  9. 9. The laser cell of claim 1 wherein each of the GaInP window layers is Ga 1-z In z P, wherein 0.4 +.z +.0.9, the dopant is Si, se or Te, the doping concentration is 1x 10 16 -5×10 18 cm -3 , and the thickness is 50-4000nm.
  10. 10. The laser cell of claim 1 wherein the GaInAs cap layer is n-doped Ga 1- x In x As, where 0.1 ∈0.5, the dopant is Si, se or Te, the doping concentration is 1 x 10 18 -1×10 21 cm -3 , and the thickness is 50nm-500nm.

Description

High-voltage 1064nm InGaAs laser battery Technical Field The invention relates to the technical field of laser batteries, in particular to a high-voltage 1064nm InGaAs laser battery. Background Currently, two laser wavelengths 808 nm and 1064 and nm are commonly used in a laser wireless energy transmission system. The 808 nm laser wireless energy transmission system has the advantages of high receiving and transmitting end efficiency, relatively low system cost, high integration level, and the 1064nm laser wireless energy transmission system has the advantages of high laser beam quality, small divergence angle and the like, and is more suitable for remote laser wireless energy transmission of km level or even hundred km level. At present, lattice matching InGaAsP 1064nm laser batteries based on InP substrates are more studied, but the cost of the InP substrates is higher, and the device manufacturing cost is higher. Therefore, the epitaxial material of the 1064nm laser battery grown by adopting the GaAs material with lower substrate material price is more suitable for batch application, and researches show that the open-circuit voltage of the 1064nm laser battery of the single junction gallium arsenide material is about 0.7V, so that a wireless energy-transmitting device with multiple junction 1064nm gallium arsenide laser batteries for replacing the current wireless energy-transmitting device used in special environments such as a ground power grid and the like can be developed and designed on the basis of the open-circuit voltage. Disclosure of Invention The invention aims at overcoming the technical defects in the prior art and provides a high-voltage 1064nm InGaAs laser battery. The technical scheme adopted for realizing the purpose of the invention is as follows: The epitaxial structure of the laser battery comprises a substrate, and a GaAs buffer layer, an AlGaAs tunneling junction, an AlGaInAs gradual change layer, an N-1 junction GaInAs subcell, an N-1 layer GaInP window layer, an N junction GaInAs subcell, an N layer GaInP window layer and a GaInAs cap layer which are sequentially arranged on the substrate, wherein in the first junction GaInAs subcell to the N-1 junction GaInAs subcell, a layer of GaInP window layer and a layer of AlGaInAs tunnel junction are arranged between two adjacent GaInAs subcells from bottom to top, and when N is not less than 9, the open circuit voltage of the laser battery can reach more than 7V. In the technical scheme, the AlGaInAs tunnel junction comprises an n+ -Al cGa1-c)1-xInx As layer doped with n type and a p+ -Al cGa1-c As layer doped with p type, wherein c is more than or equal to 0.5, the doping concentration of the n+ -Al cGa1-c As layer and the p+ -Al cGa1-c As layer is 1 multiplied by 10 19-1×1021cm-3, the thickness is 1-100nm, and the AlGaInAs tunnel junction grows on a GaAs substrate material In a gradual manner through the change of In content. In the technical scheme, the AlGaInAs graded layer grows in a component graded mode to realize the growth of a target lattice constant, the doping concentration of the p-type doped AlGaInAs layer is 1 multiplied by 10 17~1×1019cm-3, and the thickness is 50-500 nm; In the above technical solution, the first AlGaInAs tunnel junction or the N-th AlGaInAs tunnel junction includes an N-type doped n+ - (Al cGa1-c)1-xInx As layer and a p-type doped p+ - (Al cGa1-c)1-xInx As layer, where c is greater than or equal to 0 and less than or equal to 0.5 and x is greater than or equal to 0 and less than or equal to 0.5, the doping concentrations of the n+ - (Al cGa1-c)1-xInx As layer and the p+ - (Al cGa1-c)1-xInx As layer are 1×10 19-1×1021cm-3, and the thicknesses are 1-100nm; In the above technical solution, the GaInAs subcell includes an n-GaInAs emitter region doped with n-type and a p-GaInAs base region doped with p-type, or an n-GaInAs emitter region doped with n-type and a p-GaInAs base region doped with p-type. In the above technical solution, the thickness of the first junction GaInAs subcell or the N junction GaInAs subcell (n+.1) subcell is 30-3000nm, and the total doping concentration is 1×10 16-1×1019cm-3. In the technical scheme, the first junction GaInAs sub-cell is a Ga 1-xInx As cell, and comprises an n-type doped n-Ga 1-xInx As emitter layer and a p-type doped p-Ga 1-xInx As base layer, wherein x is more than or equal to 0.19 and less than or equal to 0.3, the doping agent of the n-Ga 1-xInx As emitter layer is Si, se or Te, the doping concentration is 1 multiplied by 10 16-1×1018cm-3, the thickness is 50-300nm, the doping agent of the p-Ga 1-xInx As base layer is Zn, mg or C, the doping concentration is 1 multiplied by 10 17-1×1019cm-3, and the thickness is 30-3000nm. In the technical scheme, the second junction GaInAs sub-cell is a Ga 1-xInx As cell and comprises an n-type doped n-Ga 1-xInx As emitter region layer and a p-type doped p-Ga 1-xInx As base region layer, wherein x is more than or equal to 0.19 an