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CN-122028511-A - Low-cost reverse-matching two-junction GaInP/GaAs solar cell and preparation method thereof

CN122028511ACN 122028511 ACN122028511 ACN 122028511ACN-122028511-A

Abstract

The invention discloses a low-cost reverse matching two-junction GaInP/GaAs solar cell and a preparation method thereof, wherein the outer edge structure of the solar cell comprises a gallium arsenide substrate, and three GaAs buffer layers, three GaInP barrier layers, three GaAs cap layers, three AlGaInP top cells, a first tunneling junction, three GaAs bottom cells and three AlGaAs cap layers which are arranged on the gallium arsenide substrate, wherein the growth rate of the middle layers of the three GaAs buffer layers, the three GaInP barrier layers, the three GaAs cap layers, the three AlGaInP top cells, the three GaAs bottom cells and the three AlGaAs cap layers is larger than that of the upper layer and the lower layer. The growth mode of the epitaxial structure adopts a slow gradual change growth mode with different rates, so that the buffer material has a lower reverse domain, the layered growth of the arsenic or phosphorus compound material is realized, the interface defect of the arsenic compound material and the phosphide material can be reduced at the interface or a steep interface, the efficient growth of the epitaxial material is satisfied, the epitaxial growth time is shortened, and the growth time cost is reduced.

Inventors

  • LIU RUBIN
  • WAN RONGHUA
  • ZHANG QIMING
  • GAO HUI
  • ZHANG BAO
  • ZHANG WENTAO
  • LIU LIRUI

Assignees

  • 天津蓝天太阳科技有限公司

Dates

Publication Date
20260512
Application Date
20251229

Claims (10)

  1. 1. The solar cell is characterized in that an outer edge structure of the solar cell comprises a gallium arsenide substrate, and three layers of GaAs buffer layers, three layers of GaInP barrier layers, three layers of GaAs cap layers, three layers of AlGaInP top cells, a first tunneling junction, three layers of GaAs bottom cells and three layers of AlGaAs cap layers which are arranged on the gallium arsenide substrate, wherein the growth rate of the middle layers of the GaAs buffer layers, the three layers of GaInP barrier layers, the three layers of GaAs cap layers, the three layers of AlGaInP top cells, the three layers of GaAs bottom cells and the three layers of AlGaAs cap layers is larger than that of the upper layer and the lower layer.
  2. 2. The solar cell of claim 1, wherein the growth rate of the middle layers of the three GaAs buffer layers, the three GaAs cap layers, the three GaAs bottom cells, and the three AlGaAs cap layers is 12-30 a/s, and the growth rate of the upper and lower layers is 2-15 a/s.
  3. 3. The solar cell of claim 1, wherein the growth rate of the middle layers of the three-layer GaInP barrier layer and the three-layer AlGaInP top cell is 0.8-15 a/s and the growth rate of the upper and lower layers is 12-25 a/s.
  4. 4. The solar cell according to claim 1, wherein the total thickness of the three GaAs buffer layers is 30 to 100nm, the thickness of the middle layer is 20 to 70nm, and the thicknesses of the upper and lower layers are 5 to 15nm, respectively.
  5. 5. The solar cell according to claim 1, wherein each GaInP barrier layer is n-doped, the dopant is Si, se or Te, the total thickness of the three GaInP barrier layers is 220-500nm, the thickness of the middle layer is 200-500nm, and the thicknesses of the upper and lower layers are 10-50nm, respectively.
  6. 6. The solar cell according to claim 1, wherein the first tunnel junction comprises an n-type doped n ++ -Ga 1-y In y P layer and a P-type doped P ++ -Al e Ga 1-e As layer, wherein the n ++ -Ga 1-y In y P layer has a doping concentration of Si, se or Te of 1 x 10 19 -1×10 21 cm -3 , a doping concentration of 0.4 +.0.9 and a thickness of 10-100nm, and the P ++ -Al e Ga 1-e As layer has a doping concentration of Zn, mg or C of 1 x 10 19 -1×10 21 cm -3 , a doping concentration of 0.1 +.e +.0.6 and a thickness of 10-100nm.
  7. 7. The solar cell according to claim 1, wherein each of the AlGaInP top cells is (Al f Ga 1-f ) 1-y In y P top cell), each of the AlGaInP top cells includes, from bottom to top, an n-doped layer of n- (Al f Ga 1-f ) 1-y In y P emitter layer and a P-doped layer of P- (Al f Ga 1-f ) 1-y In y P base layer), wherein 0.1≤f≤ 0.6,0.4≤y≤0.9, wherein the n- (Al f Ga 1-f ) 1-y In y P emitter layer has a dopant concentration of Si, se or Te of 1 x10 17 -1×10 19 cm -3 , the total thickness of the three n- (Al f Ga 1-f ) 1-y In y P emitter layers is 30-200nm, the thickness of the intermediate layer is 10-180nm, the thickness of both the upper and lower layers is 10-20nm, the dopant of the P- (Al f Ga 1-f ) 1-y In y P base layer is Zn, mg or C, the thickness of the three base layers is 1 x10 16 -1×10 18 cm -3 , the thickness of the P- (Al f Ga 1-f ) 1-y In y P base layer is 20-3000nm, the thickness of the intermediate layer is 10-2960nm, and the thickness of the upper and lower layers is 5-20nm.
  8. 8. The solar cell of claim 1, wherein each layer of GaAs bottom cell sequentially comprises an n-GaAs emitter layer doped with n type and a p-GaAs base layer doped with p type from bottom to top, wherein the doping agent of the n-GaAs emitter layer is Si, se or Te, the doping concentration is 1×10 17 -1×10 19 cm -3 , the total thickness of the three n-GaAs emitter layers is 30-200nm, the thickness of the middle layer is 10-180nm, the thicknesses of the upper layer and the lower layer are respectively 10-20nm, the doping agent of the p-GaAs base layer is Zn, mg or C, the doping concentration is 1×10 16 -1×10 18 cm -3 , the thickness of the three p-GaAs base layer is 20-3000nm, the thickness of the middle layer is 10-2960nm, and the thicknesses of the upper layer and the lower layer are respectively 5-20nm.
  9. 9. The solar cell according to claim 1, wherein each AlGaAs cap layer is n + -Al 1-x Ga x As doped n-type, wherein x is 0.02-0.8, the dopant is Si, se or Te, the doping concentration is 1 x 10 18 -1×10 21 cm -3 , the total thickness of the three AlGaAs cap layers is 10-500nm, the thickness of the intermediate layer is 200-500nm, and the thickness of the upper and lower layers is 5-50nm, respectively.
  10. 10. The method for manufacturing a solar cell according to any one of claims 1 to 9, wherein the outer edge structure of the solar cell is manufactured by: Sequentially growing three GaAs buffer layers on a GaAs substrate by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) technology, namely, pre-passing AsH 3 at the temperature of 700-800 ℃ under the pressure of 50mbar, and growing three GaAs buffer layers after carrying out surface high-temperature treatment on the GaAs substrate; growing three GaInP barrier layers on the three GaAs buffer layers, wherein the growth temperature is 500-700 ℃; Growing three GaAs cap layers on the three GaInP barrier layers, wherein the growth temperature is 550-800 ℃; Growing three layers of AlGaInP top batteries on the three layers of GaAs cap layers, wherein the growth temperature is 600-800 ℃; growing a first tunneling junction on the three-layer AlGaInP top cell, wherein the growth temperature is 500-700 ℃; Growing a three-layer GaAs bottom cell on the first tunneling junction, wherein the growth temperature is 600-800 ℃; Growing three AlGaAs cap layers on the three GaAs bottom batteries, wherein the growth temperature is 550-800 ℃; the total growth time is 1.5-2.5 hours.

Description

Low-cost reverse-matching two-junction GaInP/GaAs solar cell and preparation method thereof Technical Field The invention relates to the technical field of solar cells, in particular to a low-cost reverse-matching two-junction GaInP/GaAs solar cell and a preparation method thereof. Background With the rapid development of commercial aerospace in low orbit, the current low-cost technology becomes the focus of attention at home and abroad. The photoelectric conversion efficiency of 32% (AM 0 spectrum) of a forward lattice mismatched triple junction solar cell (GaInP/Ga0.94In0.06 As/Ge) has been applied in engineering. However, the germanium substrate is expensive, which is disadvantageous for the application of the whole low cost. In addition, the GaAs substrate-based reverse gallium arsenide solar cell (GaInP/GaAs/GaInAs) technology can realize mass production, and the cost control thereof needs to be further improved. In comprehensive consideration, gallium arsenide-based reverse matching two-junction (GaInP/GaAs) solar cells can meet various requirements for commercial aerospace. Disclosure of Invention The invention aims at solving the technical defect of the control of the reverse epitaxial growth cost in the prior art, and provides a low-cost reverse matching two-junction GaInP/GaAs solar cell. Another object of the present invention is to provide a method for manufacturing the solar cell. The technical scheme adopted for realizing the purpose of the invention is as follows: The utility model provides a low-cost reverse matching two knot GaInP/GaAs's solar cell, solar cell's outer limit structure includes the gallium arsenide substrate, and set up three-layer GaAs buffer layer, three-layer GaInP barrier layer, three-layer GaAs cap layer, three-layer AlGaInP top cell, first tunnel junction, three-layer GaAs bottom cell and three-layer AlGaAs cap layer on the gallium arsenide substrate, wherein, three-layer the growth rate that the GaAs buffer layer, three-layer GaInP barrier layer, three-layer GaAs cap layer, three-layer AlGaInP top cell, three-layer GaAs bottom cell and three-layer AlGaAs cap layer are the intermediate level is greater than the growth rate of upper and lower two-layer. In the technical scheme, the growth rate of the three layers of the GaAs buffer layer, the three layers of the GaAs cap layer, the three layers of the GaAs bottom battery and the three layers of the AlGaAs cap layer is 12-30A/s, and the growth rate of the upper layer and the lower layer is 2-15A/s. In the technical scheme, the growth rate of the three layers of the GaInP blocking layer and the middle layer of the three layers of the AlGaInP top battery is 0.8-15A/s, and the growth rate of the upper layer and the lower layer is 12-25A/s. In the technical scheme, the total thickness of the three GaAs buffer layers is 30-100nm, the thickness of the middle layer is 20-70nm, and the thicknesses of the upper layer and the lower layer are 5-15nm respectively. In the above technical scheme, each GaInP barrier layer is doped n-type, the doping agent is Si, se or Te, the total thickness of the three GaInP barrier layers is 220-500nm, the thickness of the middle layer is 200-500nm, and the thicknesses of the upper layer and the lower layer are respectively 10-50nm. In the above technical scheme, the first tunneling junction comprises an n-type doped n ++-Ga1-yIny P layer and a P-type doped P ++-AleGa1-e As layer, wherein the doping agent of the n ++-Ga1-yIny P layer is Si, se or Te, the doping concentration is 1×10 19-1×1021cm-3, y is more than or equal to 0.4 and less than or equal to 0.9, the thickness is 10-100nm, the doping agent of the P ++-AleGa1-e As layer is Zn, mg or C, the doping concentration is 1×10 19-1×1021cm-3, e is more than or equal to 0.1 and less than or equal to 0.6, and the thickness is 10-100nm. In the above technical scheme, each layer of AlGaInP top cell is (Al fGa1-f)1-yIny P top cell, each layer of AlGaInP top cell comprises an n-type doped n- (Al fGa1-f)1-yIny P emitter layer and a P-type doped P- (Al fGa1-f)1-yIny P base layer from bottom to top, wherein f is more than or equal to 0.1 and less than or equal to 0.6,0.4 and less than or equal to 0.9, the doping concentration of the n- (Al fGa1-f)1-yIny P emitter layer is Si, se or Te, the doping concentration is 1×10 17-1×1019cm-3, the total thickness of the three layers of n- (Al fGa1-f)1-yIny P emitter layers is 30-200nm, the thickness of the interlayer is 10-180nm, the thickness of the upper layer and the lower layer is 10-20nm, the doping concentration of the P- (Al fGa1-f)1-yIny P base layer is 1×10 16-1×1018cm-3, the thickness of the P- (Al fGa1-f)1-yIny P base layer is 20-3000nm, the thickness of the interlayer is 10-2960nm, and the thickness of the upper layer and the lower layer is 5-20 nm). In the technical scheme, each layer of GaAs bottom battery sequentially comprises an n-GaAs emitter layer doped with n type and a p-GaAs base layer doped with