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CN-122028512-A - Multi-junction flexible gallium arsenide laser battery with radiation resistance and preparation method thereof

CN122028512ACN 122028512 ACN122028512 ACN 122028512ACN-122028512-A

Abstract

The invention discloses a multi-junction flexible gallium arsenide laser battery with irradiation resistance and a preparation method thereof, wherein an outer edge structure comprises a substrate, and a GaAs buffer layer, an N-layer GaInP blocking graded layer, a lower cap layer, a GaInP window layer, a GaInAs contact layer, an N-junction GaInAs sub-battery and an upper cap layer which are sequentially arranged on the GaAs substrate, wherein an AlGaInAs tunnel junction and a GaInP window layer are arranged between two adjacent GaInAs sub-batteries from bottom to top, and a Bragg reflector DBR is arranged between an N-1 junction GaInAs sub-battery and an N-1 junction AlGaInAs tunnel junction. The PECVD or PVD is used for preparing a metal reflecting mirror (ODR) as a supporting layer of an epitaxial material and a conductive layer of the laser battery, so that the thickness of the laser battery can be obviously reduced, the conductive capability of the laser battery is enhanced, and a smaller series resistance is easy to obtain. Photons which are not absorbed by the front N-1 junction GaInAs sub-cell can be reflected back to the N junction GaInAs sub-cell, and meanwhile, the thickness of an active region of the N junction GaInAs sub-cell is reduced, so that the irradiation resistance of the whole cell is improved.

Inventors

  • WAN RONGHUA
  • YAO LIYONG
  • ZHANG QIMING
  • LIU LIRUI
  • LIU WEIWU
  • ZHANG BAO

Assignees

  • 天津蓝天太阳科技有限公司

Dates

Publication Date
20260512
Application Date
20251229

Claims (10)

  1. 1. The utility model provides a flexible gallium arsenide laser battery of multijunction with anti irradiation, its characterized in that, the outer limit structure of flexible gallium arsenide laser battery of multijunction includes the substrate, and set gradually GaAs buffer layer on the GaAs substrate, N layer GaInP blocks graded layer, lower cap layer, gaInP window layer, N knot GaInAs subcell and last cap layer, be provided with AlGaInAs tunnel junction and GaInP window layer from bottom to top between two adjacent knot GaInAs subcells, be provided with the Bragg reflector DBR between N-1 knot GaInAs subcell and N-1 knot AlGaInAs tunnel junction, wherein: each junction the GaInAs subcell includes an n-doped n-GaInP emitter region and a p-doped p-GaInAs base region, or an n-GaInAs emitter region and a p-doped p-GaInAs base region.
  2. 2. The multi-junction flexible gallium arsenide laser cell according to claim 1, wherein each of said GaInP graded barrier layers is an n-doped Ga 1-z In z P graded barrier layer having a doping concentration of 1x 10 17 ~1×10 19 cm -3 and a thickness in the range of 50nm to 500nm.
  3. 3. The multi-junction flexible gallium arsenide laser cell according to claim 1, wherein the GaInAs contact layer is an n-type doped Ga 1-x In x As contact layer, wherein x is 0.19-0.3, the doping concentration is 1 x 10 18 ~1×10 21 cm -3 , and the thickness is 50 nm-500 nm.
  4. 4. The multi-junction flexible gallium arsenide laser cell according to claim 1, wherein the first junction tunnel junction or the nth junction tunnel junction comprises an N-type doped n+ - (Al c Ga 1-c ) 1-x In x As layer and a p-type doped p+ - (Al c Ga 1-c ) 1-x In x As layer, wherein 0≤c≤0.5, 0.5≤d≤1, and 0.19≤x≤0.3, the N-type doped n+ - (Al c Ga 1-c ) 1-x In x As layer and the p-type doped p+ - (Al c Ga 1-c ) 1-x In x As layer each having a doping concentration of 1 x10 19 -1×10 20 cm -3 and a thickness of 1-100nm.
  5. 5. The multi-junction flexible gallium arsenide laser cell according to claim 1, wherein the thickness of the GaInAs subcell of the first junction or the GaInAs subcell of the nth junction is 30-3000nm, and the doping concentration is 1 x 10 17 -1×10 19 cm -3 , N ≡ 1.
  6. 6. The multi-junction flexible gallium arsenide laser cell according to claim 1, wherein the thickness of all layers of the epitaxial structure of the multi-junction flexible gallium arsenide laser cell is obtained by the following formula: Wherein I 0 is the light intensity of the surface of the laser battery, x is the transmission depth of incident laser, I is the light intensity of the incident laser transmitted to x, and alpha (λ) is the absorption coefficient of the absorption region material GaInAs sub-battery at the wavelength lambda.
  7. 7. The multi-junction flexible gallium arsenide laser cell according to claim 1, wherein the bragg reflector DBR is (Al c Ga 1-c ) 1-x In x As/(Al d Ga 1-d ) 1-x In x As DBR, wherein 0≤c≤0.5, 0.5≤d≤1, and 0.19≤x≤0.3.
  8. 8. The multi-junction flexible gallium arsenide laser cell according to claim 7, wherein said bragg reflector DBR is p-doped with a doping concentration of 1 x 10 17 -1×10 19 cm -3 , a thickness of 1000-4000nm, and a number of periods of 10-30, each period, (Al c Ga 1-c ) 1-x In x As having a thickness of 20-200nm, and (Al d Ga 1-d ) 1-x In x As having a thickness of 20-200 nm).
  9. 9. The method for manufacturing the multi-junction flexible gallium arsenide laser battery according to any one of claims 1-8, comprising the following steps: Step 1, a GaAs buffer layer, an N-layer GaInP blocking graded layer, a lower cap layer, a GaInP window layer, a GaInAs contact layer, an N-junction GaInAs sub-cell and an upper cap layer are sequentially grown on a GaAs substrate by adopting a metal organic chemical vapor deposition MOCVD technology, an AlGaInAs tunnel junction and a GaInP window layer are arranged between two adjacent junction GaInAs sub-cells from bottom to top, and a Bragg reflector DBR is grown between an N-1 junction GaInAs sub-cell and an N-1 junction AlGaInAs tunnel junction; And 2, evaporating and plating a contact metal reflector on the upper cap layer, electroplating a GaAs substrate material, adhering a glass cover plate on the GaAs substrate, removing the GaAs substrate, the GaAs buffer layer and the GaInP blocking graded layer, photoetching and preparing an upper electrode, corroding a lower cap layer, evaporating and plating an antireflection film material, and thus preparing the laser battery.
  10. 10. The method of claim 9, wherein the metal reflector is deposited as a support layer for the epitaxial material and as an electrically conductive layer for the laser cell using a PECVD or PVD apparatus.

Description

Multi-junction flexible gallium arsenide laser battery with radiation resistance and preparation method thereof Technical Field The invention relates to the technical field of laser batteries, in particular to a multi-junction flexible gallium arsenide laser battery with irradiation resistance and a preparation method thereof. Background The laser photovoltaic cell converts laser energy into electric energy by utilizing the photovoltaic effect, and the performance of the laser photovoltaic cell directly influences the link efficiency and transmission power of a laser energy supply system. The laser wireless energy transmission has the advantages of long transmission distance, high transmission efficiency and high power density. At present, research and practical application of 808nm GaAs-based multi-junction laser cells have a certain market environment in the field of ground high voltage. Unlike 808nm GaAs laser photovoltaic cell application in the field of wireless energy transfer in a terrestrial environment, a 1064nm laser cell will be the next generation of key research product in terms of long range wireless charging and low loss. In addition, the laser battery can be subjected to a large amount of high-energy particle irradiation in a space environment, ionization damage and displacement damage can be generated in the laser battery, so that the electric performance of the laser battery is seriously degraded, and the practical application is seriously restricted. According to the irradiation theory of the space solar cell, the gallium arsenide solar cell has poor irradiation resistance, and the main reason for the performance reduction after irradiation is that displacement damage can generate defects in the semiconductor material to form a non-radiative composite center, so that the minority carrier lifetime of the cell is reduced. Therefore, the irradiation resistance characteristic of the laser battery under the space environment condition has important significance for high-efficiency and high-power laser wireless energy transmission aiming at special environments. Disclosure of Invention The invention aims at overcoming the technical defects existing in the prior art, and provides a multi-junction flexible gallium arsenide laser battery with radiation resistance, which has the characteristics of high photoelectric conversion efficiency, radiation resistance, shapeability and the like, and can be directly applied as a complete battery Another object of the present invention is to provide a method for manufacturing the above laser battery. The technical scheme adopted for realizing the purpose of the invention is as follows: The utility model provides a flexible gallium arsenide laser battery of multijunction with anti irradiation, the outer limit structure of flexible gallium arsenide laser battery of multijunction includes the substrate, and sets gradually GaAs buffer layer, N layer GaInP blocks graded layer, lower cap layer, gaInP window layer, N knot GaInAs subcell and upper cap layer on the GaAs substrate, be provided with AlGaInAs tunnel junction and GaInP window layer from bottom to top between two adjacent knot GaInAs subcells, be provided with the Bragg reflector DBR between N-1 knot GaInAs subcell and N-1 knot AlGaInAs tunnel junction, wherein: each junction the GaInAs subcell includes an n-doped n-GaInP emitter region and a p-doped p-GaInAs base region, or an n-GaInAs emitter region and a p-doped p-GaInAs base region. In the above technical scheme, the GaInP blocking graded layer is an n-type doped Ga 1-zInz P blocking graded layer, and the layer is used as a blocking layer and a lattice graded layer at the same time, so that the epitaxial manufacturing cost can be reduced, the doping concentration of the GaInP blocking graded layer is 1×10 17~1×1019cm-3, and the thickness range is 50 nm-500 nm. In the technical scheme, the GaInAs contact layer is an n-type doped Ga 1-xInx As contact layer, wherein x is more than or equal to 0.19 and less than or equal to 0.3, the doping concentration is 1 multiplied by 10 18~1×1021cm-3, and the thickness is 50-500 nm. In the above technical solution, the first junction tunnel junction or the N-th junction tunnel junction includes an N-type doped n+ - (Al cGa1-c)1-xInx As layer and a p-type doped p+ - (Al cGa1-c)1-xInx As layer, where c is 0≤c≤0.5, d is 0.5≤d≤1, and x is 0.19≤x≤0.3, the doping concentrations of the N-type doped n+ - (Al cGa1-c)1-xInx As layer and the p-type doped p+ - (Al cGa1-c)1-xInx As layer are 1×10 19-1×1020cm-3, and the thicknesses thereof are 1-100nm. In the above technical solution, the thickness of the GaInAs subcell of the first junction or the GaInAs subcell of the N-th junction is 30-3000nm, and the doping concentration is 1×10 17-1×1019cm-3, N+.1. In the above technical solution, the thickness of each layer of the laser battery is obtained by the following formula (Beer-Lambert law): Wherein I 0 is the light intensity of the