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CN-122028535-A - Electrode preparation method, battery piece and photovoltaic module

CN122028535ACN 122028535 ACN122028535 ACN 122028535ACN-122028535-A

Abstract

The invention discloses a preparation method of an electrode, a battery piece and a photovoltaic module, wherein the preparation method of the electrode comprises the following steps of preparing a composite seed layer on a basal layer, wherein the composite seed layer comprises a nickel layer adjacent to the basal layer and a first copper layer formed on the nickel layer; and preparing a second copper layer with the thickness of 1-2 mu m on one side of the composite seed layer far away from the basal layer. According to the preparation method of the electrode, the preparation method is simpler, the interface binding force among the substrate layer, the composite seed layer and the second copper layer of the prepared electrode is enhanced, and the risk of interface aging stripping is reduced, so that the structural stability and reliability of the prepared electrode are improved, the conductivity and long-term reliability of the electrode are improved, the cost of the electrode is reduced, and the cost and efficiency of the photovoltaic cell industry are promoted.

Inventors

  • ZHU ZHIJUAN
  • ZHU GUANGCHAO
  • Hui Jiakang
  • LIU LIBING
  • YANG DECAI

Assignees

  • 宿迁阿特斯阳光能源科技有限公司

Dates

Publication Date
20260512
Application Date
20260108

Claims (10)

  1. 1. A method of preparing an electrode comprising the steps of: preparing a composite seed layer on a base layer, wherein the composite seed layer comprises a nickel layer adjacent to the base layer and a first copper layer formed on the nickel layer; And preparing a second copper layer with the thickness D 1 of 1-2 mu m on one side of the composite seed layer far away from the substrate layer.
  2. 2. The method of manufacturing an electrode according to claim 1, wherein the nickel layer has a thickness D 2 , and D 2 satisfies 50 nm≤D 2 ≤100 nm, and/or, The thickness of the first copper layer is D 3 , and D 3 is 200 nm-300 nm or less and D 3 is less.
  3. 3. The method of manufacturing an electrode according to claim 1, further comprising the steps of, prior to forming the composite seed layer: and after soaking the substrate layer by adopting hydrofluoric acid solution, treating the substrate layer by plasma.
  4. 4. The method for producing an electrode according to claim 3, wherein the concentration of the hydrofluoric acid solution is 5% -10%, the soaking time is 10 s-20 s, and/or, The power of the plasma treatment is 300-500W, and the treatment time is 5-10 s.
  5. 5. The method for producing an electrode according to any one of claims 1 to 4, further comprising the steps of: And preparing the second copper layer on one side of the composite seed layer far away from the substrate layer, annealing under the protection of nitrogen, and forming an electrode structure through laser etching to obtain the electrode.
  6. 6. The method for manufacturing an electrode according to claim 5, wherein the annealing temperature of the annealing is 200 ℃ to 250 ℃ and the annealing time is 30min to 60min.
  7. 7. The method for manufacturing an electrode according to claim 5, wherein the width of the electrode grid line in the electrode structure formed by laser etching is 20 μm to 30 μm.
  8. 8. The method for producing an electrode according to claim 5, wherein the coverage rate of the electrode structure on the electrode surface is α, wherein α satisfies 3% to 6%.
  9. 9. A battery piece, characterized in that the battery piece comprises an N-type crystal silicon wafer and an electrode, wherein the electrode is prepared by the preparation method of the electrode according to any one of claims 1-8.
  10. 10. A photovoltaic module characterized in that the electrode prepared by the method for preparing an electrode according to any one of claims 1 to 8 or the battery sheet according to claim 9 is included.

Description

Electrode preparation method, battery piece and photovoltaic module Technical Field The invention relates to the technical field of electrodes, in particular to a preparation method of an electrode, a battery piece and a photovoltaic module. Background In the manufacture of photovoltaic cells, electrodes are used as core structures for current collection and derivation, and the material selection and preparation process directly influence the performance and cost of the photovoltaic cells. In the related art, a silver paste printing process is often adopted to prepare an electrode of a photovoltaic cell, and silver particles in the silver paste can effectively collect photo-generated carriers generated by the electrode by virtue of excellent conductivity. However, the traditional process adopts silver paste, which has high cost, severely restricts the cost reduction space of the photovoltaic industry and is not beneficial to the large-scale popularization of photovoltaic products. Meanwhile, the binding force between the silver paste and the substrate layer (such as crystalline silicon) of the electrode depends on an organic binder, and the silver paste is exposed to high-temperature and high-humidity outdoor environment for a long time, so that the problems of interface aging, peeling and the like are easy to occur, and the service life of the battery is shortened. Disclosure of Invention The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, an object of the present invention is to provide a method for manufacturing an electrode, which reduces the risk of interface aging and peeling, is beneficial to improving the structural stability and reliability of the manufactured electrode, improving the conductivity and long-term reliability of the electrode, and reducing the cost of the electrode. The preparation method of the electrode according to the embodiment of the invention comprises the following steps: preparing a composite seed layer on a base layer, wherein the composite seed layer comprises a nickel layer adjacent to the base layer and a first copper layer formed on the nickel layer; And preparing a second copper layer with the thickness D 1 of 1-2 mu m on one side of the composite seed layer far away from the substrate layer. According to the preparation method of the electrode, which is provided by the embodiment of the first aspect of the invention, the preparation method is simpler, the interface binding force among the substrate layer, the composite seed layer and the second copper layer of the prepared electrode is enhanced, and the risk of interface aging stripping is reduced, so that the structural stability and reliability of the prepared electrode are improved, the conductivity and long-term reliability of the electrode are improved, the cost of the electrode is reduced, and the cost reduction and synergy of the photovoltaic cell industry are promoted. According to some embodiments of the invention, the nickel layer has a thickness D 2, the D 2 satisfies 50 nm≤D 2≤100 nm, and/or the first copper layer has a thickness D 3, the D 3 satisfies 200 nm≤D 3≤300 nm. According to some embodiments of the invention, the method further comprises the step of, prior to forming the composite seed layer: and after soaking the substrate layer by adopting hydrofluoric acid solution, treating the substrate layer by plasma. According to some embodiments of the invention, the concentration of the hydrofluoric acid solution is 5% -10%, the soaking time is 10-20 s, and/or the power of the plasma treatment is 300-500W, and the treatment time is 5-10 s. According to some embodiments of the invention, the method for preparing an electrode further comprises the steps of: And preparing the second copper layer on one side of the composite seed layer far away from the substrate layer, annealing under the protection of nitrogen, and forming an electrode structure through laser etching to obtain the electrode. According to some embodiments of the invention, the annealing temperature of the annealing is 200 ℃ to 250 ℃ and the annealing time is 30min to 60min. According to some embodiments of the invention, the width of the electrode grid line in the electrode structure formed by laser etching is 20 μm to 30 μm. According to some embodiments of the invention, the coverage rate of the electrode structure on the electrode surface is alpha, wherein alpha satisfies that alpha is 3 percent-6 percent. According to the battery piece provided by the embodiment of the second aspect of the invention, the battery piece comprises an N-type crystal silicon wafer and an electrode, and the electrode is prepared by adopting the preparation method of the electrode provided by the embodiment of the first aspect of the invention. According to the photovoltaic module of the embodiment of the third aspect of the invention, the electrode prepared by the preparation method of the electrode