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CN-122028551-A - Solar cell, preparation method thereof and photovoltaic module

CN122028551ACN 122028551 ACN122028551 ACN 122028551ACN-122028551-A

Abstract

The application discloses a solar cell, a preparation method thereof and a photovoltaic module, wherein the solar cell comprises a cell main body and grid lines arranged on the cell main body, the solar cell comprises a plurality of solar cells arranged on the cell main body along the thickness direction of the grid lines, the cross-section width of the grid line is narrowed from the bottom close to the battery body to the top far from the battery body, and at least one side edge of the cross section of the grid line is a broken line-shaped outline. The application can effectively reduce the reflection loss of light and improve the utilization rate of the solar cell on incident light, thereby effectively improving the photoelectric conversion efficiency of the solar cell.

Inventors

  • GUO ZHONGJUN

Assignees

  • 通威太阳能（成都）有限公司

Dates

Publication Date
20260512
Application Date
20260205

Claims (10)

  1. 1. The solar cell is characterized by comprising a cell main body and grid lines arranged on the cell main body, wherein the width of the cross section of each grid line is narrowed from the bottom close to the cell main body to the top far from the cell main body along the thickness direction of each grid line, and at least one side edge of each cross section of each grid line is a broken line-shaped outline.
  2. 2. The solar cell according to claim 1, wherein the zigzag profile is stepped in the grid line.
  3. 3. The solar cell according to claim 2, wherein the grid line includes a first sub-grid line to an N-th sub-grid line which are sequentially stacked on the cell body, N is 2 or more, and the number of layers of the stepped polygonal profile corresponds to the number of N.
  4. 4. The solar cell according to claim 3, wherein the grid line comprises a first sub-grid line, a second sub-grid line, and a third sub-grid line sequentially stacked on the cell body.
  5. 5. The solar cell according to claim 4, wherein the width of the bottom of the grid line section is 6 μm to 10 μm in the grid line.
  6. 6. The solar cell according to any one of claims 1-5, wherein the material of the grid line comprises one or both of copper or tin; And/or the number of the groups of groups, In the grid line, all the side edges of the section are the broken line-shaped outline; And/or the number of the groups of groups, The solar cell includes any one of a heterojunction cell, a passivation contact cell, or a back contact cell.
  7. 7. A method of manufacturing a solar cell, comprising the steps of: Preparing a seed layer on the battery body; Preparing a patterned mask, namely forming a patterned first mask layer on one side of the seed layer, which is away from the battery main body, wherein the first mask layer is provided with a first hollowed-out area exposing the surface of the seed layer; Electroplating, namely forming a first sub-grid line on the surface of the seed layer exposed in the first hollowed-out area; The step of preparing the patterned mask and the step of electroplating are circularly carried out at least once to form an N-th sub-grid line on an N-1-th sub-grid line, so as to obtain a grid line comprising the first sub-grid line to the N-th sub-grid line, wherein the cross section width of the N-th sub-grid line is smaller than the cross section width of the N-1-th sub-grid line along the thickness direction of the grid line, and N is a positive integer greater than or equal to 2; the mask is removed.
  8. 8. The method of claim 7, wherein the method of preparing the patterned first mask layer comprises: Coating a first photosensitive adhesive layer with the thickness not exceeding 3 mu m on the surface of the seed layer; Exposing the first photoresist layer of a partial region and performing first development treatment to obtain a patterned first mask layer; And/or the number of the groups of groups, And after the step of removing the mask, continuing to remove the seed layer outside the grid line area.
  9. 9. The method of manufacturing a solar cell according to claim 8, wherein the method of manufacturing an nth mask layer comprises: Coating an N-1 mask layer and an N photosensitive adhesive layer on the N-1 sub-grid line; exposing part of the Nth photoresist layer and carrying out Nth developing treatment to obtain the patterned Nth mask layer, wherein: The height of the Nth photoresist layer is greater than that of the first photoresist layer along the thickness direction of the grid line; And/or the number of the groups of groups, And the height of the Nth sub-grid line is smaller than the height of the Nth mask layer along the thickness direction of the grid line.
  10. 10. A photovoltaic module comprising a solar cell according to any one of claims 1 to 6 or a solar cell produced by the production method according to any one of claims 7 to 9.

Description

Solar cell, preparation method thereof and photovoltaic module Technical Field The application relates to the technical field of solar cells, in particular to a solar cell, a preparation method thereof and a photovoltaic module. Background In a solar cell, the surface of the grid line shows strong reflection to sunlight, so that most of light incident to the grid line is reflected to the outside of the solar cell and cannot be effectively absorbed and utilized by the solar cell. The reflection loss reduces the utilization ratio of incident light by the solar cell, thereby limiting the improvement of the photoelectric conversion efficiency of the solar cell. Disclosure of Invention In order to reduce reflection loss of light and improve utilization rate of incident light by the solar cell, so as to effectively improve photoelectric conversion efficiency of the solar cell, the application provides the solar cell, a preparation method thereof and a photovoltaic module. In a first aspect, embodiments of the present application provide a solar cell. The solar cell comprises a cell body and grid lines arranged on the cell body, wherein the width of the cross section of each grid line is narrowed from the bottom close to the cell body to the top far away from the cell body along the thickness direction of each grid line, and at least one side edge of each cross section of each grid line is a broken line-shaped profile. As an alternative implementation manner, in the embodiment of the present application, in the gate line, the fold line profile is stepped. As an optional implementation manner, in an embodiment of the present application, the gate line includes a first sub-gate line to an N-th sub-gate line sequentially stacked on the battery main body, N is greater than or equal to 2, and the number of layers of the stepped polygonal contour corresponds to the number of N. As an alternative embodiment, in an embodiment of the present application, the gate line includes a first sub-gate line, a second sub-gate line, and a third sub-gate line sequentially stacked on the battery body. In an embodiment of the present application, the width of the bottom of the gate line cross section is 6 μm to 10 μm. As an alternative implementation manner, in an embodiment of the present application, the material of the gate line includes one or two of copper or tin; And/or the number of the groups of groups, In the grid line, all the side edges of the section are the broken line-shaped outline; And/or the number of the groups of groups, The solar cell includes any one of a heterojunction cell, a passivation contact cell, or a back contact cell. In a second aspect, an embodiment of the present application provides a method for manufacturing a solar cell. A method of fabricating a solar cell, comprising the steps of: Preparing a seed layer on the battery body; Preparing a patterned mask, namely forming a patterned first mask layer on one side of the seed layer, which is away from the battery main body, wherein the first mask layer is provided with a first hollowed-out area exposing the surface of the seed layer; Electroplating, namely forming a first sub-grid line on the surface of the seed layer exposed in the first hollowed-out area; The step of preparing the patterned mask and the step of electroplating are circularly carried out at least once to form an N-th sub-grid line on an N-1-th sub-grid line, so as to obtain a grid line comprising the first sub-grid line to the N-th sub-grid line, wherein the cross section width of the N-th sub-grid line is smaller than the cross section width of the N-1-th sub-grid line along the thickness direction of the grid line, and N is a positive integer greater than or equal to 2; the mask is removed. As an optional implementation manner, in an embodiment of the present application, a method for preparing the patterned first mask layer includes: Coating a first photosensitive adhesive layer with the thickness not exceeding 3 mu m on the surface of the seed layer; exposing the first photoresist layer in a partial area and performing first development treatment to obtain the patterned first mask layer. As an alternative implementation manner, in an embodiment of the present application, after the step of removing the mask, the seed layer outside the gate line area is removed continuously. As an alternative embodiment, in an embodiment of the present application, a method for preparing an nth mask layer includes: Coating an N-1 mask layer and an N photosensitive adhesive layer on the N-1 sub-grid line; exposing part of the Nth photoresist layer and carrying out Nth developing treatment to obtain the patterned Nth mask layer, wherein: The height of the Nth photoresist layer is greater than that of the first photoresist layer along the thickness direction of the grid line; And/or the number of the groups of groups, And the height of the Nth sub-grid line is smaller than the height of the Nth mask layer