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CN-122028555-A - Solar cell and photovoltaic module

CN122028555ACN 122028555 ACN122028555 ACN 122028555ACN-122028555-A

Abstract

The application relates to the technical field of solar cells, in particular to a solar cell and a photovoltaic module. In the embodiment of the application, the tunneling layer and the doped conductive layer are arranged in the first area of the first surface of the substrate, so that the contact performance with the first electrode can be improved, the transmission of carriers is facilitated, and compared with the mode that the tunneling layer and the doped conductive layer are also arranged in the second area, the light parasitic absorption of the doped conductive layer can be reduced, and the utilization rate of incident light is improved. Meanwhile, by matching with the light trapping structure with the reflectivity smaller than 3.5% in the second area, the light trapping effect of the second area is improved, so that the utilization rate of incident light is further improved, the photoelectric conversion efficiency of the solar cell is further improved, and the power generation performance is enhanced.

Inventors

  • ZHANG BIKE
  • ZHANG XINYU
  • JIN JINGSHENG
  • LIU ZHAOXUAN

Assignees

  • 晶科能源股份有限公司
  • 浙江晶科能源有限公司

Dates

Publication Date
20260512
Application Date
20260212

Claims (20)

  1. 1. A solar cell, comprising: The light source comprises a substrate, a first light source and a second light source, wherein the substrate is provided with a first surface and a second surface which are oppositely arranged along the thickness direction of the substrate, the first surface comprises a first area and a second area, a first light trapping structure is arranged on the second area, and the reflectivity of the first light trapping structure is less than or equal to 3.5%; a tunneling layer disposed in the first region of the first surface; The doped conductive layer is arranged on one side of the tunneling layer, which is away from the substrate; a first passivation layer disposed on one side of the doped conductive layer facing away from the tunneling layer and the second region of the first surface, and The first electrode is arranged on one side of the doped conductive layer, which is away from the tunneling layer, and is electrically connected with the doped conductive layer.
  2. 2. The solar cell of claim 1, wherein the first light trapping structure has a reflectivity of greater than or equal to 0.2%.
  3. 3. The solar cell according to claim 1, wherein the first light trapping structure has an average reflectivity of 0.2% to 15% in a wavelength band ranging from 300nm to 500 nm.
  4. 4. The solar cell according to claim 1, wherein the first light trapping structure has an average reflectivity of 0.5% to 40% in a wavelength band ranging from 900nm to 1200 nm.
  5. 5. The solar cell of any one of claims 1-4, wherein the first light trapping structure comprises a first positive pyramid structure, a first inverted pyramid structure, or a first curved array light trapping structure.
  6. 6. The solar cell of claim 5, wherein the first light trapping structure comprises a first positive pyramid structure having a tower base with a one-dimensional size of 1 μιη to 15 μιη.
  7. 7. The solar cell of claim 5, wherein the first light trapping structure comprises a first inverted pyramid structure having an open end with a one-dimensional size of 0.5 μιη to 20 μιη.
  8. 8. The solar cell of claim 5, wherein the first light trapping structure comprises a first curved array light trapping structure having a bottom with a one-dimensional size of 0.2 μιη to 110 μιη.
  9. 9. The solar cell of claim 5, wherein the first light trapping structure comprises a first curved array light trapping structure comprising a conical array structure, a cylindrical array structure, or a spherical array structure.
  10. 10. The solar cell according to any of claims 1-4, wherein the arithmetic average roughness of the first light trapping structure is 50nm to 25000nm.
  11. 11. The solar cell according to any of claims 1-4, wherein the first region is provided with a pile structure or a tower foundation structure.
  12. 12. The solar cell of claim 11, wherein the first region has a textured structure thereon, the textured structure having a reflectivity of 1% to 3%.
  13. 13. The solar cell according to claim 11, wherein the first region is provided with a textured structure, and wherein the textured structure has an average reflectivity of 5% to 15% in a wavelength range of 300nm to 500 nm.
  14. 14. The solar cell according to claim 11, wherein the first region is provided with a textured structure, and wherein the textured structure has an average reflectivity of 5% to 40% in a wavelength band of 900nm to 1200 nm.
  15. 15. The solar cell of claim 11, wherein the first region has a textured structure thereon, the textured structure having a one-dimensional size of 1 μιη to 15 μιη.
  16. 16. The solar cell of claim 11, wherein the first region has a textured structure thereon, the textured structure having an arithmetic average roughness of 200nm to 1500nm.
  17. 17. The solar cell of claim 11, wherein the first region has a tower base structure disposed thereon, the tower base structure having a reflectivity of 10% to 25%.
  18. 18. The solar cell according to claim 11, wherein the first region is provided with a tower base structure, and wherein the average reflectivity of the tower base structure is 20% to 45% in a wavelength band of 300nm to 500 nm.
  19. 19. The solar cell according to claim 11, wherein the first region is provided with a tower base structure, and wherein the average reflectivity of the tower base structure is 22% to 55% in a wavelength band of 900nm to 1200 nm.
  20. 20. The solar cell according to claim 11, wherein a tower base structure is provided on the first region, and a one-dimensional dimension of a bottom of the tower base structure is 3 μm to 16 μm.

Description

Solar cell and photovoltaic module Technical Field The application relates to the technical field of solar cells, in particular to a solar cell and a photovoltaic module. Background A solar cell is a device that converts solar light energy into electrical energy. Specifically, the solar cell generates carriers by utilizing the photovoltaic principle, and then the carriers are led out by using the electrodes, so that the electric energy can be effectively utilized. For example, TOPCon (Tunnel Oxide Passivated Contact, tunnel oxide passivation contact) cells are receiving increasing attention for their better photoelectric conversion performance. TOPCon cells are a tunneling oxide passivation contact solar cell technology based on the selective carrier principle. In TOPCon solar cells, selective transport of carriers is achieved by forming a passivation contact structure on the substrate surface. However, the performance of the solar cell is still further improved. Disclosure of Invention Based on this, it is necessary to provide a solar cell and a photovoltaic module to improve the performance of the solar cell. According to one aspect of the present application, a solar cell is provided, which includes a substrate, a tunneling layer, a doped conductive layer, a first passivation layer, and a first electrode. The substrate is provided with a first surface and a second surface which are oppositely arranged along the thickness direction of the substrate, the first surface comprises a first area and a second area, a first light trapping structure is arranged on the second area, and the reflectivity of the first light trapping structure is less than or equal to 3.5%. The tunneling layer is disposed in a first region of the first surface. The doped conductive layer is arranged on one side of the tunneling layer, which is away from the substrate. The first passivation layer is arranged on one side of the doped conductive layer, which is away from the tunneling layer, and a second area of the first surface. The first electrode is arranged on one side of the doped conductive layer, which is away from the tunneling layer, and is electrically connected with the doped conductive layer. In some embodiments, the reflectivity of the first light trapping structure is greater than or equal to 0.2%. In some embodiments, the first light trapping structure has an average reflectivity of 0.2% to 15% in the 300nm to 500nm band. In some embodiments, the first light trapping structure has an average reflectivity of 0.5% to 40% in the 900nm to 1200nm band. In some embodiments, the first light trapping structure comprises a first positive pyramid structure, a first inverted pyramid structure, or a first curved array light trapping structure. In some embodiments, the first light trapping structure comprises a first positive pyramid structure having a tower base with a one-dimensional size of 1 μm to 15 μm. In some embodiments, the first light trapping structure comprises a first inverted pyramid structure, the open end of the first inverted pyramid structure having a one-dimensional size of 0.5 μm to 20 μm. In some embodiments, the first light trapping structure comprises a first curved array light trapping structure, the bottom of the first curved array light trapping structure having a one-dimensional size of 0.2 μm to 110 μm. In some embodiments, the first light trapping structure comprises a first curved array light trapping structure comprising a conical array structure, a cylindrical array structure, or a spherical array structure. In some embodiments, the arithmetic average roughness of the first light trapping structure is 50nm to 25000nm. In some embodiments, a pile structure or a foundation structure is provided on the first region. In some embodiments, the first region has a textured structure thereon, the textured structure having a reflectivity of 1% to 3%. In some embodiments, the first region has a textured structure thereon, and the textured structure has an average reflectivity of 5% to 15% over a wavelength band of 300nm to 500 nm. In some embodiments, the first region has a textured structure thereon, and the textured structure has an average reflectivity of 5% to 40% over a wavelength band of 900nm to 1200 nm. In some embodiments, the first region has a pile structure disposed thereon, the pile structure having a one-dimensional size of 1 μm to 15 μm. In some embodiments, the first region has a texture with an arithmetic average roughness of 200nm to 1500nm. In some embodiments, the first region has a tower base structure disposed thereon, the tower base structure having a reflectivity of 10% to 25%. In some embodiments, the first region is provided with a tower-based structure, and the average reflectivity of the tower-based structure is 20% to 45% in a wave band range of 300nm to 500 nm. In some embodiments, the first region is provided with a tower-based structure, and the average reflectivity of the tower-base