CN-122028558-A - Light-operated artificial synapse device and preparation method thereof

Abstract

The embodiment of the invention discloses a light-operated artificial synapse device and a preparation method thereof. The artificial synapse device comprises a substrate, a light-emitting layer and a synapse function layer which are sequentially stacked along the thickness direction, wherein the light-emitting layer is arranged on the substrate, the light-emitting surface of the light-emitting layer faces the synapse function layer, and the synapse function layer is used for responding to a light signal emitted by the light-emitting layer and generating conductivity change simulating biological synapse behavior. According to the light-operated artificial synapse device provided by the invention, the luminous layer is integrated into the artificial synapse device, so that an optical signal does not need to be transmitted for a long distance, and the optical signal can directly act on the synapse function layer in an oriented manner, thereby solving the problem of low light coupling efficiency of the existing light-operated synapse.

Inventors

• GONG WEN
• ZHANG YE
• LI CHEN

Assignees

• 苏州晶台光电有限公司

Dates

Publication Date

20260512

Application Date

20260206

Claims (10)

1. 1. An optically controlled artificial synapse device comprising a substrate, a luminescent layer and a synapse function layer sequentially stacked in a thickness direction: the light-emitting layer is arranged on the substrate, and the light-emitting surface of the light-emitting layer faces the synaptic function layer; the synaptic function layer is used for responding to the light signal emitted by the light emitting layer and generating a conductance change simulating biological synaptic behavior.
2. 2. The light-operated artificial synapse device of claim 1, further comprising an optical coupling layer disposed between the light-emitting layer and the synapse function layer for focusing an optical signal emitted by the light-emitting layer.
3. 3. The light-operated artificial synapse device of claim 1, in which the light-emitting layer comprises miniLED arrays.
4. 4. A light-operated artificial synapse device in accordance with claim 3 further comprising a drive module electrically connected to the miniLED array for modulating the direction and magnitude of the conductance change of the synapse functional layer by adjusting the wavelength band and intensity of the light signals emitted by the miniLED array.
5. 5. The light-operated artificial synapse device of claim 4, wherein the driving module is configured to control the miniLED array layer to emit light signals of a first wavelength band and a first light intensity to cause the synapse function layer to produce a long-term enhancement effect, and/or Controlling the miniLED array layer to emit optical signals of a second wave band and a second light intensity so as to enable the synaptic function layer to generate a long-time-range inhibition effect; Wherein the first wavelength band is smaller than the second wavelength band, and the first light intensity is greater than the second light intensity.
6. 6. The light-operated artificial synapse device of claim 5, wherein the first wavelength band is 400-410nm blue light, the first light intensity is 0.5-10mW/cm 2 , the second wavelength band is 830-870nm near infrared light, and the second light intensity is 0.1-0.5mW/cm 2 .
7. 7. The light-operated artificial synapse device of claim 1, further comprising at least two electrodes electrically connected to the synapse functional layer.
8. 8. The light-operated artificial synapse device of claim 7, wherein the synapse functional layer comprises an n-type layer and a p-type layer; the at least two electrodes comprise a source electrode and a drain electrode, wherein the source electrode is electrically connected with the n-type layer and used for collecting electrons, and the drain electrode is electrically connected with the p-type layer and used for collecting holes.
9. 9. A light-operated artificial synapse device in accordance with claim 1 further comprising an encapsulation layer covering a side of the synapse functional layer facing away from the substrate.
10. 10. A method for preparing an optically controlled artificial synapse device according to any of claims 1-8; the method comprises the following steps: Providing a substrate; Forming a light emitting layer on one side of the substrate; and forming a synaptic function layer on one side of the light-emitting layer, which is away from the substrate.

Description

Light-operated artificial synapse device and preparation method thereof Technical Field The embodiment of the invention relates to the technical field of artificial synapses, in particular to a light-operated artificial synapse device and a preparation method thereof. Background An artificial synapse is an artificial neuron-like element used to simulate biological nervous system information transfer and storage functions. The light-operated artificial synapse takes an optical signal as an external excitation source to regulate and control the capturing and releasing processes of carriers (electrons and holes) in the device, so that the dynamic adjustment of the synapse weight is realized, and the learning, memory and information processing functions of the biological synapse are simulated. Currently, the low optical coupling efficiency of optically controlled artificial synapses is a key technical bottleneck limiting their performance breakthroughs. This problem arises from reflection and scattering losses of the optical signal at the device interface, and from energy level mismatch between the optical control layer and other functional layers of the device (e.g., electrode layers, transport layers), poor interface compatibility, etc. In the prior art, researchers try to reduce the light energy loss by optimizing the thickness, the crystallinity or the surface morphology of the light control layer material, but the light control layer material is limited by the limitation of the integral structure design of the device, and the improvement effect of the light coupling efficiency is limited. Disclosure of Invention The invention provides a light-operated artificial synapse device and a preparation method thereof, which solve the problem of low light-operated synapse light coupling efficiency in the prior art by integrating a light-emitting layer into the artificial synapse device, and are suitable for scenes such as low-power-consumption nerve morphology calculation, intelligent visual perception and the like. In a first aspect, an embodiment of the present invention provides a light-operated artificial synapse device, including a substrate, a light-emitting layer, and a synapse function layer sequentially stacked in a thickness direction, where the light-emitting layer is disposed on the substrate, and a light-emitting surface of the light-emitting layer faces the synapse function layer, and the synapse function layer is configured to respond to a light signal emitted by the light-emitting layer and generate a conductance change simulating a biological synapse behavior. Optionally, the light emitting device further comprises a light coupling layer, wherein the light coupling layer is arranged between the light emitting layer and the synaptic function layer and is used for focusing the light signals emitted by the light emitting layer. Optionally, the light emitting layer comprises miniLED arrays. Optionally, the device further comprises a driving module, wherein the driving module is electrically connected with the miniLED array and is used for adjusting the wave band and the light intensity of the light signals emitted by the miniLED array so as to adjust and control the conductivity change direction and the conductivity change amplitude of the synaptic function layer. Optionally, the driving module is configured to control the miniLED array layer to emit an optical signal of a first wavelength band and a first light intensity so as to generate a long-term enhancement effect on the synaptic function layer, and/or control the miniLED array layer to emit an optical signal of a second wavelength band and a second light intensity so as to generate a long-term suppression effect on the synaptic function layer, where the first wavelength band is smaller than the second wavelength band and the first light intensity is greater than the second light intensity. Optionally, the first wave band is blue light of 400-410nm, the first light intensity is 0.5-10mW/cm 2, the second wave band is near infrared light of 830-870nm, and the second light intensity is 0.1-0.5mW/cm 2. Optionally, at least two electrodes are electrically connected to the synaptic function layer. Optionally, the synaptic function layer comprises an n-type layer and a p-type layer, the at least two electrodes comprise a source electrode and a drain electrode, the source electrode is electrically connected with the n-type layer for collecting electrons, and the drain electrode is electrically connected with the p-type layer for collecting holes. Optionally, an encapsulation layer is further included, the encapsulation layer covering a side of the synaptic function layer facing away from the substrate. In a second aspect, an embodiment of the present invention further provides a method for preparing the light-operated artificial synapse device, which is characterized in that the method is used for preparing any one of the light-operated artificial synaps