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CN-122028563-A - Light emitting diode and preparation method thereof

CN122028563ACN 122028563 ACN122028563 ACN 122028563ACN-122028563-A

Abstract

The present disclosure provides a light emitting diode and a method of manufacturing the same. The light emitting diode comprises a first semiconductor layer, a light emitting layer, a second semiconductor layer and a current expansion layer, wherein the first semiconductor layer, the light emitting layer and the second semiconductor layer are sequentially laminated, a first step surface extending to the first semiconductor layer is formed on the surface of the second semiconductor layer, a second step surface extending to the middle of the second semiconductor layer is formed on the surface of the second semiconductor layer, the current expansion layer is located on the surface of the second semiconductor layer, and the distance A between the edge of the current expansion layer and the edge of the surface of the second semiconductor layer is smaller than the width B of the second step surface.

Inventors

  • WANG SHUN
  • LI SHUAI
  • ZHOU YU
  • LOU GAOMING
  • WEI TING
  • WANG BING

Assignees

  • 京东方华灿光电(浙江)有限公司

Dates

Publication Date
20260512
Application Date
20260413

Claims (10)

  1. 1. A light emitting diode, characterized in that the light emitting diode comprises a first semiconductor layer (101), a light emitting layer (102), a second semiconductor layer (103) and a current spreading layer (104); The first semiconductor layer (101), the light-emitting layer (102) and the second semiconductor layer (103) are sequentially laminated, a first step surface (200) extending to the first semiconductor layer (101) is formed on the surface of the second semiconductor layer (103), and a second step surface (300) extending to the middle part of the second semiconductor layer (103) is formed on the surface of the second semiconductor layer (103); The current spreading layer (104) is located on the surface of the second semiconductor layer (103), and the distance A between the edge of the current spreading layer (104) and the surface edge of the second semiconductor layer (103) is smaller than the width B of the second step surface (300).
  2. 2. The light-emitting diode according to claim 1, wherein the distance a is 0.5-5 μm.
  3. 3. The led of claim 1 or 2, wherein the width B is 1-10 μm.
  4. 4. The light emitting diode according to claim 1 or 2, wherein an included angle a between the second step surface (300) and the corresponding sidewall is 20-70 degrees.
  5. 5. The light emitting diode according to claim 1 or 2, wherein a height difference C between the second step surface (300) and the surface of the second semiconductor layer (103) is 500 to 5000 angstroms.
  6. 6. A method of manufacturing a light emitting diode, the method comprising: Manufacturing a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially stacked; Patterning the first semiconductor layer, the light emitting layer and the second semiconductor layer to form a first step surface extending from the surface of the second semiconductor layer to the first semiconductor layer; Forming a current spreading layer on the surface of the second semiconductor layer; And carrying out patterning treatment on the surface of the second semiconductor layer uncovered by the current expansion layer to form a second step surface extending from the surface of the second semiconductor layer to the middle part of the second semiconductor layer, wherein the distance A between the edge of the current expansion layer and the surface edge of the second semiconductor layer is smaller than the width B of the second step surface.
  7. 7. The method of claim 6, wherein the distance a is 0.5-5 μm.
  8. 8. The method according to claim 6 or 7, wherein the width B is 1-10 μm.
  9. 9. The method according to claim 6 or 7, wherein an included angle a between the second step surface and the corresponding side wall is 20-70 degrees.
  10. 10. The method according to claim 6 or 7, wherein a height difference C between the second step surface and a surface of the second semiconductor layer is 500 to 5000 angstroms.

Description

Light emitting diode and preparation method thereof Technical Field The present disclosure relates to the field of light emitting devices, and in particular, to a light emitting diode and a method for manufacturing the same. Background A light emitting Diode (LIGHT EMITTING Diode, LED) is a semiconductor device capable of emitting light, has advantages of energy saving, high brightness, high durability, long life, light weight, and the like, and has been widely used in fields of illumination, display, and the like. The related art provides a light emitting diode including a stacked first semiconductor layer, a light emitting layer, a second semiconductor layer, and a current spreading layer. The step surface extending to the first semiconductor layer is formed from the second semiconductor layer, the current expansion layer is located on the surface of the second semiconductor layer, and a certain distance exists between the edge of the current expansion layer and the edge of the surface of the second semiconductor layer. However, as the size of an LED chip is gradually reduced, for example, a Micro-LED (Micro LED) chip, the chip size thereof has an increasing effect on the brightness of the LED chip. How to reduce the influence of the chip size on the brightness of the LED chip is a current urgent problem to be solved. Disclosure of Invention The embodiment of the disclosure provides a light emitting diode and a preparation method thereof, which can improve the brightness of the light emitting diode. The technical scheme is as follows: In one aspect, a light emitting diode is provided that includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a current spreading layer; the first semiconductor layer, the light-emitting layer and the second semiconductor layer are sequentially laminated, a first step surface extending to the first semiconductor layer is formed on the surface of the second semiconductor layer, and a second step surface extending to the middle part of the second semiconductor layer is formed on the surface of the second semiconductor layer; The current spreading layer is positioned on the surface of the second semiconductor layer, and the distance A between the edge of the current spreading layer and the edge of the surface of the second semiconductor layer is smaller than the width B of the second step surface. Optionally, the distance A is 0.5-5 μm. Optionally, the width B is 1-10 μm. Optionally, an included angle a between the second step surface and the corresponding side wall is 20-70 degrees. Optionally, the height difference C between the second step surface and the surface of the second semiconductor layer is 500-5000 angstroms. In another aspect, a method for manufacturing a light emitting diode is provided, the method comprising: Manufacturing a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially stacked; Patterning the first semiconductor layer, the light emitting layer and the second semiconductor layer to form a first step surface extending from the surface of the second semiconductor layer to the first semiconductor layer; Forming a current spreading layer on the surface of the second semiconductor layer; And carrying out patterning treatment on the surface of the second semiconductor layer uncovered by the current expansion layer to form a second step surface extending from the surface of the second semiconductor layer to the middle part of the second semiconductor layer, wherein the distance A between the edge of the current expansion layer and the surface edge of the second semiconductor layer is smaller than the width B of the second step surface. Optionally, the distance A is 0.5-5 μm. Optionally, the width B is 1-10 μm. Optionally, an included angle a between the second step surface and the corresponding side wall is 20-70 degrees. Optionally, the height difference C between the second step surface and the surface of the second semiconductor layer is 500-5000 angstroms. The technical scheme provided by the embodiment of the disclosure has the beneficial effects that: in the embodiment of the disclosure, the first semiconductor layer, the light-emitting layer and the second semiconductor layer are sequentially stacked, the current expansion layer is located on the surface of the second semiconductor layer, a certain distance exists between the edge of the current expansion layer and the edge of the surface of the second semiconductor layer, and the area is an ineffective area (the composite light emission is very small under the general current) without light emission on one hand, and light is absorbed on the other hand. Therefore, when the step surface is formed, the embodiment of the disclosure further forms a second step surface extending to the middle part of the second semiconductor layer in addition to the first step surface extending to the first semiconductor layer, and th