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CN-122028564-A - Light emitting diode and manufacturing method thereof

CN122028564ACN 122028564 ACN122028564 ACN 122028564ACN-122028564-A

Abstract

The disclosure provides a light emitting diode and a manufacturing method thereof, and belongs to the technical field of semiconductors. The light-emitting diode comprises an epitaxial layer, a plurality of n electrodes and a plurality of p electrodes, wherein the epitaxial layer comprises an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer which are sequentially stacked, the n electrodes and the p electrodes are positioned on the same side of the epitaxial layer and are electrically connected with the epitaxial layer, the n electrodes are distributed in multiple rows, the periphery of each n electrode is surrounded by the p electrodes, the n electrodes are taken as the centers, the centers of the p electrodes which are surrounded by the n electrodes are positioned on the top of one positive n-shape, the n is larger than 2 and smaller than or equal to 10, and the positive n-shape common edges corresponding to the p electrodes which are positioned outside two adjacent n electrodes are arranged. The present disclosure may improve brightness.

Inventors

  • YING DANQING
  • ZHU HAO
  • FU XINJUN
  • LIU CHUANGUI
  • XIA ZHANGGEN

Assignees

  • 京东方华灿光电(浙江)有限公司

Dates

Publication Date
20260512
Application Date
20251222

Claims (10)

  1. 1. A light emitting diode, characterized in that the light emitting diode comprises an epitaxial layer (1), a plurality of n-electrodes (2) and a plurality of p-electrodes (3), wherein the epitaxial layer (1) comprises an n-type semiconductor layer (11), a light emitting layer (12) and a p-type semiconductor layer (13) which are sequentially stacked, and the plurality of n-electrodes (2) and the plurality of p-electrodes (3) are positioned on the same side of the epitaxial layer (1) and are electrically connected with the epitaxial layer (1); The n electrodes (2) are distributed in a plurality of rows; The periphery of each n electrode (2) is surrounded by a plurality of p electrodes (3), the n electrodes (2) are taken as centers, the centers of the p electrodes (3) which are surrounded by the n electrodes (2) are positioned on the top point of one positive n-sided figure, the n-sided figures which are positioned outside two adjacent n electrodes (2) and correspond to the p electrodes (3) are shared, and n is more than 2 and less than or equal to 10.
  2. 2. The light emitting diode according to claim 1, characterized in that each of the p-electrode (3) and the n-electrode (2) is cylindrical, the distance between the center of each p-electrode (3) and the center of the surrounded n-electrode (2) being more than 70 μm and less than 90 μm; And/or; the radius of the cross section of the p electrode (3) and the radius of the cross section of the n electrode (2) are both larger than 10 μm and smaller than 20 μm.
  3. 3. The light emitting diode according to claim 1 or 2, further comprising a metal interconnect layer (8) laminated on the surface of the epitaxial layer (1), the metal interconnect layer (8) comprising a plurality of n-type bus portions (81) and a plurality of p-type bus portions (82); The n-type bus parts (81) are in one-to-one correspondence with the number of columns arranged by the n-electrodes (2), and the orthographic projection of each n-type bus part (81) on the epitaxial layer (1) completely covers orthographic projection of the corresponding whole column of n-electrodes (2) on the epitaxial layer (1), and each n-type bus part (81) is electrically connected with the corresponding whole column of n-electrodes (2); There is one p-type bus portion (82) between two adjacent n-type bus portions (81), and the orthographic projection of each p-type bus portion (82) on the epitaxial layer (1) comprises orthographic projections of a plurality of p-electrodes (3) on the epitaxial layer (1), and each p-electrode (3) is electrically connected with one p-type bus portion (82).
  4. 4. A light emitting diode according to claim 3, wherein the n-type bus portion (81) includes arc portions (811) connected in one-to-one correspondence with a plurality of n-electrodes (2) and a bar portion (812) connecting adjacent two of the arc portions (811); The circumference of the edge of each arc-shaped part (811) is concentric with the corresponding n-electrode (2).
  5. 5. A light emitting diode according to claim 3, characterized in that the outer edge of the p-type junction (82) comprises a first edge (821) and a second edge (822), the first edge (821) being a curve immediately adjacent to the n-type junction (81) and identical to the outer contour of the n-type junction (81); the second edge (822) is a straight line parallel and immediately adjacent to the outer edge of the epitaxial layer (1).
  6. 6. The light emitting diode according to claim 4, further comprising a passivation layer (9), a p-type pad (102) and an n-type pad (103), the passivation layer (9) covering the surface of the epitaxial layer (1), the surface of the metal interconnection layer (8) and the surface of the reflective passivation layer (6); The p-type bonding pads (102) and the n-type bonding pads (103) are arranged on the surface of the passivation layer (9) away from the epitaxial layer (1) at intervals; -the passivation layer (9) has a plurality of first passivation openings (901) on the side of the p-type pad (102), each first passivation opening (901) being located between adjacent p-electrodes (3), and the p-type pad (102) being electrically connected to the p-type bus portion (82) through the first passivation opening (901); The passivation layer (9) is provided with a plurality of second passivation openings (902) on one side of the n-type bonding pad (103), the orthographic projection of each n-electrode (2) covered by the n-type bonding pad (103) on the passivation layer (9) is positioned in one of the second passivation openings (902), and the n-type bonding pad (103) is electrically connected with the n-type bus part (81) through the second passivation openings (902).
  7. 7. A light emitting diode according to claim 6, characterized in that the first passivation openings (901) in the middle of the passivation layer (9) are distributed in an array centered on one of the n-electrodes (2); The first passivation opening (901) near the edge of the epitaxial layer (1) is a strip-shaped first passivation opening, and the length direction of the strip-shaped first passivation opening is the arrangement direction of the p-type bonding pad (102) and the n-type bonding pad (103); The edge of the strip-shaped first passivation opening far away from the epitaxial layer (1) is an arc connecting section, and the circle center of the circumference where the arc connecting section is located is the center of the p electrode (3) closest to the circle center.
  8. 8. The light emitting diode of claim 6, wherein each of the n-type bus portions (81) has a first end located below the p-type pad (102) and a second end located below the n-type pad (103); in the same n-type bus bar portion (81), the area of the arc-shaped portion (811) near the first end of the n-type bus bar portion (81) is larger than the area of the arc-shaped portion (811) near the second end of the n-type bus bar portion (81).
  9. 9. A light emitting diode according to any of claims 1,2, 4-7, characterized in that the light emitting diode further comprises a current blocking layer (4) and a current spreading layer (5), the current spreading layer (5) being located between the p-type semiconductor layer (13) and the p-electrode (3), the current spreading layer (5) being electrically connected with the p-electrode (3); the current expansion layer (5) comprises a plurality of expansion layer openings (50) which are in one-to-one correspondence with the plurality of n-electrodes (2), and each n-electrode (2) is positioned in the corresponding expansion layer opening (50) and is insulated from the current expansion layer (5); The current blocking layer (4) is located between the p-type semiconductor layer (13) and the current expansion layer (5), the current blocking layer (4) comprises a plurality of circular blocking blocks (40) which are in one-to-one correspondence with the p-electrodes (3), the blocking blocks (40) are located between the p-type semiconductor layer (13) and the corresponding p-electrodes (3), and the orthographic projection of the p-electrodes (3) on the current blocking layer (4) is located inside the corresponding blocking blocks (40).
  10. 10. A method for manufacturing a light emitting diode, the method comprising: manufacturing an epitaxial layer, wherein the epitaxial layer comprises an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer which are sequentially stacked; Manufacturing a plurality of n electrodes and a plurality of p electrodes; The n electrodes and the p electrodes are positioned on the same side of the epitaxial layer and are electrically connected with the epitaxial layer; The n electrodes are distributed in multiple rows, a plurality of p electrodes are arranged around the periphery of each n electrode, the n electrodes are taken as centers, the centers of the p electrodes which are arranged around the periphery of each n electrode are positioned on the top point of one positive n-side shape, the n electrodes which are arranged outside two adjacent n electrodes are arranged on the same side of the positive n-side shape corresponding to the p electrodes, and n is more than 2 and less than or equal to 10.

Description

Light emitting diode and manufacturing method thereof Technical Field The disclosure belongs to the technical field of semiconductors, and in particular relates to a light emitting diode and a manufacturing method thereof. Background In the industry of light emitting diodes, the light output energy efficiency of the device is improved, and the core goal of the product is always achieved. In the related art, a light emitting diode generally includes an epitaxial layer, a plurality of p-electrodes, and a plurality of n-electrodes. The epitaxial layer comprises an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer which are sequentially stacked. The plurality of n-electrodes and the plurality of p-electrodes are located on the surface of the epitaxial layer. The n-electrodes are distributed in a plurality of rows, while the p-electrodes are usually designed as continuous strip-shaped metal strips arranged between two adjacent rows of n-electrodes. However, while the elongate p-electrode design facilitates current spreading and reduces series resistance, the current injection path concentrates on the elongate p-electrode footprint when current is injected through the elongate p-electrode. Since the contact interface of the metal and the semiconductor layer is not ideally uniform. The electric field at the edge of the contact interface is stronger and the current barrier is lower, and most of the current is preferentially injected from the edge of the elongated p-electrode rather than from the central region of the elongated p-electrode. Therefore, current will concentrate at the edge of the p electrode instead of flowing out from the whole electrode surface at the moment of injection, so that current is unevenly diffused to the light-emitting layer, local current density and light-emitting blind areas are easy to occur, and the carrier recombination efficiency of the light-emitting layer is reduced. Disclosure of Invention The embodiment of the disclosure provides a light emitting diode and a manufacturing method thereof, which can improve brightness when a device meets the electrical stress requirement of a lower limit. The technical scheme is as follows: The embodiment of the disclosure provides a light-emitting diode, which comprises an epitaxial layer, a plurality of n electrodes and a plurality of p electrodes, wherein the epitaxial layer comprises an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer which are sequentially stacked, the n electrodes and the p electrodes are positioned on the same side of the epitaxial layer and are electrically connected with the epitaxial layer, the n electrodes are distributed in a plurality of rows, the periphery of each n electrode is surrounded by the p electrodes, the n electrodes are used as the center, the centers of the p electrodes which are surrounded by the n electrodes are positioned on the top of one positive n-side, the n is more than 2 and less than or equal to 10, and the centers of the p electrodes which are positioned outside two adjacent n electrodes are corresponding to the positive n-side common sides. In yet another implementation of the present disclosure, each of the p-electrode and the n-electrode is cylindrical, a distance between a center of each of the p-electrode and a center of the surrounding n-electrode is greater than 70 μm and less than 90 μm, and/or a radius of a cross section of the p-electrode and a radius of a cross section of the n-electrode are both greater than 10 μm and less than 20 μm. In still another implementation manner of the present disclosure, the light emitting diode further includes a metal interconnection layer stacked on a surface of the epitaxial layer, the metal interconnection layer includes a plurality of n-type bus portions and a plurality of p-type bus portions, the n-type bus portions are in one-to-one correspondence with the number of columns of the n-electrodes, orthographic projections of the n-type bus portions on the epitaxial layer completely cover orthographic projections of corresponding columns of the n-electrodes on the epitaxial layer, each n-type bus portion is electrically connected with the corresponding column of the n-electrodes, one p-type bus portion exists between two adjacent n-type bus portions, orthographic projections of each p-type bus portion on the epitaxial layer include orthographic projections of a plurality of p-electrodes on the epitaxial layer, and each p-electrode is electrically connected with one of the p-type bus portions. In still another implementation manner of the present disclosure, the n-type bus portion includes an arc portion connected with a plurality of n-electrodes in one-to-one correspondence, and a bar portion connecting two adjacent arc portions, and a circumference of an edge of each arc portion is concentric with the corresponding n-electrode. In yet another implementation of the present disclosu