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CN-122028565-A - Horizontal light emitting diode and method of manufacturing the same

CN122028565ACN 122028565 ACN122028565 ACN 122028565ACN-122028565-A

Abstract

The invention provides a horizontal light-emitting diode and a manufacturing method thereof, the horizontal light emitting diode comprises a permanent substrate, an epitaxial composite layer, a first conductive electrode, a second conductive electrode and an ohmic contact layer. The epitaxial composite layer is provided with a light-emitting layer with a light-emitting wave band of 1100-2000 nanometers (nm) and is arranged on the permanent substrate. The first conductive electrode is arranged on the permanent substrate and is electrically connected to the epitaxial composite layer. The second conductive electrode is arranged on the epitaxial composite layer, is electrically connected to the epitaxial composite layer and is positioned on the same side of the permanent substrate as the first conductive electrode. Ohmic contact is formed between the ohmic contact layer and the first conductive electrode, and the ohmic contact layer is sandwiched between the epitaxial composite layer and the first conductive electrode. Wherein a thickness of the ohmic contact layer is not more than 1 μm.

Inventors

  • ZHENG HONGDA
  • CAI JINGYUAN
  • XIAO YUTONG

Assignees

  • 台亚半导体股份有限公司

Dates

Publication Date
20260512
Application Date
20241231
Priority Date
20241112

Claims (16)

  1. 1. A horizontal light emitting diode comprising: A permanent substrate; the epitaxial composite layer is provided with a light-emitting layer with a light-emitting wave band of 1100-2000 nanometers and is arranged on the permanent substrate; the first conductive electrode is arranged on the permanent substrate and is electrically connected to the epitaxial composite layer; A second conductive electrode disposed on the epitaxial composite layer and electrically connected to the epitaxial composite layer and on the same side of the permanent substrate as the first conductive electrode, and And the ohmic contact layer forms ohmic contact with the first conductive electrode and is clamped between the epitaxial composite layer and the first conductive electrode, wherein the thickness of the ohmic contact layer is not more than 1 micron.
  2. 2. The horizontal light emitting diode of claim 1, wherein the ohmic contact layer is an InGaP layer.
  3. 3. The led of claim 1, wherein the first conductivity type electrode has a metal stack having a thickness of less than 1 micron.
  4. 4. The led of claim 3, wherein the metal stack is made of a material selected from the group consisting of titanium, platinum, gold, palladium, germanium, zinc gold, and combinations thereof.
  5. 5. The horizontal light emitting diode of claim 1, wherein the epitaxial composite layer further comprises a first compound semiconductor layer and a second compound semiconductor layer, the first compound semiconductor layer and the second compound semiconductor layer sandwich the light emitting layer, and the first compound semiconductor layer is disposed between the light emitting layer and the ohmic contact layer.
  6. 6. The horizontal light emitting diode of claim 5, wherein the first compound semiconductor layer is a first conductivity type indium phosphide layer and the second compound semiconductor layer is a second conductivity type indium phosphide layer.
  7. 7. The led of claim 1, wherein the permanent substrate is one of a silicon substrate, an aluminum nitride substrate, and a sapphire substrate.
  8. 8. The led of claim 1, further comprising a substrate bonding layer sandwiched between the permanent substrate and the epitaxial composite layer, the substrate bonding layer being one of an aluminum oxide layer and a silicon oxide layer.
  9. 9. A method of manufacturing a horizontal light emitting diode, comprising: providing an epitaxial composite layer formed on an epitaxial growth substrate, wherein the epitaxial composite layer is provided with a light-emitting layer with a light-emitting wave band of 1100-2000 nanometers; Providing an ohmic contact layer arranged on the epitaxial composite layer, wherein the thickness of the ohmic contact layer is not more than 1 micron; providing a metal lamination layer which is arranged on the ohmic contact layer and forms ohmic contact with the ohmic contact layer; providing a substrate bonding layer to cover the epitaxial composite layer and the metal lamination; Providing a permanent substrate bonded to the substrate bonding layer, removing the epitaxially grown substrate, and Etching part of the ohmic contact layer and stopping on the metal lamination to form an electrode groove.
  10. 10. The method of claim 9, wherein the step of providing an ohmic contact layer is providing an InGaAs layer.
  11. 11. The method of claim 9, wherein the metal stack is made of a material selected from the group consisting of titanium, platinum, gold, palladium, germanium, zinc gold, and combinations thereof.
  12. 12. The method of claim 9, wherein providing an epitaxial composite layer further comprises providing a first compound semiconductor layer and a second compound semiconductor layer, the first compound semiconductor layer and the second compound semiconductor layer sandwiching the light emitting layer, and the first compound semiconductor layer being disposed between the light emitting layer and the ohmic contact layer.
  13. 13. The method of claim 12, wherein the step of providing a first compound semiconductor layer and a second compound semiconductor layer provides a first conductivity type indium phosphide layer and a second conductivity type indium phosphide layer.
  14. 14. The method of claim 9, wherein the step of providing a permanent substrate provides one of a silicon substrate, an aluminum nitride substrate, and a sapphire substrate.
  15. 15. The method of claim 9, wherein the step of providing a substrate bonding layer provides one of an aluminum oxide layer and a silicon oxide layer.
  16. 16. The method of claim 9, further comprising the step of providing a metal vapor deposition to form an electrode of a first conductivity type in the electrode trench.

Description

Horizontal light emitting diode and method of manufacturing the same Technical Field The present invention relates to a horizontal type light emitting diode and a manufacturing method thereof, and more particularly, to a horizontal type short wave infrared light emitting diode and a manufacturing method thereof. Background Light-Emitting Diode (LED) has advantages of high brightness, small volume, low power consumption, long life, etc., and is widely used in lighting or display products. As shown in FIG. 1, a conventional horizontal red and infrared LED with a wavelength band of 590-1100 nanometers (nm) is shown. The horizontal LED has a sapphire substrate 10, a substrate bonding layer 11, a P-type gallium phosphide (GaP) epitaxial layer 12, a light-emitting layer 13, an N-type gallium phosphide epitaxial layer 14, an N-type electrode 15 and a P-type electrode 16. Since the P-type gallium phosphide epitaxial layer 12 and the N-type gallium phosphide epitaxial layer 14 are compound semiconductor layers having a high doping concentration, the two epitaxial layers can form good ohmic contact with the N-type and P-type electrodes, respectively. On the other hand, since the thickness of the P-type gallium phosphide epitaxial layer 12 in the conventional red-light and infrared-light horizontal light-emitting diode device can reach 1 to 10 micrometers (μm), the yellow light etching process of the P-type electrode 16 is performed in the device manufacturing process, and the P-type gallium phosphide epitaxial layer 12 has a sufficient thickness to conveniently and effectively control the etching depth of the P-type electrode 16 in the P-type gallium phosphide epitaxial layer 12, and the metal vapor deposition process of the subsequent electrode can be smoothly performed. However, the epitaxial structure of the horizontal led is not suitable for the horizontal Short-wave infrared (Short WAVELENGTH INFRARED, SWIR) led with the light-emitting band falling in 1100-2000 nanometers (nm). Therefore, an innovative horizontal led structure and manufacturing method are needed to meet the development requirement of the short-wave infrared horizontal led. Disclosure of Invention The main objective of the present invention is to provide a high-brightness horizontal light emitting diode and a manufacturing method thereof, which are applicable to Short-wave infrared (Short WAVELENGTH INFRARED, SWIR) light emitting diodes with a wavelength range of 1100-2000 nanometers (nm). The LED structure disclosed by the invention not only can accurately control the etching stop depth of the P-type ohmic contact layer, but also can reduce the absorption of light formed by the light-emitting layer, thereby improving the brightness of the LED and increasing the application range of products at the back end of the industry. In order to achieve the above objective, the present invention provides a horizontal light emitting diode, which comprises a permanent substrate, an epitaxial composite layer, a first conductive electrode, a second conductive electrode and an ohmic contact layer. The epitaxial composite layer is provided with a light-emitting layer with a light-emitting wave band of 1100-2000 nanometers (nm) and is arranged on the permanent substrate. The first conductive electrode is arranged on the permanent substrate and is electrically connected to the epitaxial composite layer. The second conductive electrode is arranged on the epitaxial composite layer, is electrically connected to the epitaxial composite layer and is positioned on the same side of the permanent substrate as the first conductive electrode. Ohmic contact is formed between the ohmic contact layer and the first conductive electrode, and the ohmic contact layer is sandwiched between the epitaxial composite layer and the first conductive electrode. Wherein a thickness of the ohmic contact layer is not more than 1 μm. In one embodiment of the horizontal light emitting diode of the present invention, the ohmic contact layer is an indium gallium arsenide phosphide (InGaAsP) layer. In one embodiment of the horizontal type light emitting diode of the present invention, the first conductive type electrode has a metal stack having a thickness of less than 1 μm. In an embodiment of the horizontal led of the present invention, the material of the metal stack is selected from one of the group consisting of titanium (Ti), platinum (Pt), gold (Au), palladium (Pd), germanium (Ge), zinc gold (ZnAu), and combinations thereof. In an embodiment of the horizontal light emitting diode of the present invention, the epitaxial composite layer further includes a first compound semiconductor layer and a second compound semiconductor layer, wherein the first compound semiconductor layer and the second compound semiconductor layer sandwich the light emitting layer, and the first compound semiconductor layer is disposed between the light emitting layer and the ohmic contact layer. In one embodiment of