CN-122028577-A - Micro light emitting diode display memory driving array, preparation method thereof and display

CN122028577ACN 122028577 ACN122028577 ACN 122028577ACN-122028577-A

Abstract

The invention discloses a micro light emitting diode display calculation driving array, a preparation method thereof and a display, and relates to the technical field of display driving. The Micro-LED array light-emitting device comprises a supporting substrate, a gating transistor, a floating gate storage transistor and Micro-LEDs, wherein the gating transistor and the floating gate storage transistor are used as driving units of an array, the Micro-LEDs are used as light-emitting units of the array, and the light-emitting units and the corresponding driving units are directly stacked and integrated in the vertical direction. The invention modulates the stored charge quantity by precisely controlling the gate voltage, not only realizes precise pulse width modulation of the light emitting time of each micro light emitting diode, but also ensures excellent holding capacity of the driving current in the frame period. The mechanism fundamentally ensures the consistency of high-brightness output, fine gray scale control and long-term working stability of the display unit, and perfectly meets the severe requirements of high-end display on image quality and reliability.

Inventors

LI MENGJIAO
WANG FEI
LI ENLONG
LIU ZHAORUI
ZHANG JIANHUA

Assignees

上海大学

Dates

Publication Date: 20260512
Application Date: 20260213

Claims (9)

1. A Micro light emitting diode display memory driving array is characterized by comprising a supporting substrate, a gating transistor, a floating gate storage transistor and Micro-LEDs, wherein the gating transistor and the floating gate storage transistor are used as driving units of the array, the Micro-LEDs are used as light emitting units of the array, and the light emitting units and the corresponding driving units are directly stacked and integrated in the vertical direction.
2. The micro light emitting diode display memory driving array according to claim 1, wherein the array is connected in such a manner that the drain electrode of each column of the floating gate memory transistors is connected, the anode electrode of each cell MicroLED is connected to the source electrode of the floating gate memory transistor of the cell, the cathode electrode of each row MicroLED is connected, the source electrode of the gate transistor of each cell is connected to the gate electrode of the floating gate memory transistor, the gate electrode of each row of the gate transistors is connected, and the drain electrode of each column of the gate transistors is connected.
3. The micro light emitting diode display memory drive array of claim 1, wherein the support substrate is a silicon-based substrate on which a silicon dioxide passivation layer is deposited.
4. The micro light emitting diode display memory drive array of claim 1, wherein the gate transistor comprises a gate metal layer, a first high-K material dielectric layer, a second channel layer, a first source electrode layer, a first drain electrode layer, and a passivation protection layer stacked sequentially from bottom to top.
5. The micro light emitting diode display memory drive array of claim 1, wherein the floating gate memory transistor comprises a gate electrode layer, a first high-K material dielectric layer, a floating gate layer, a second high-K material dielectric layer, a channel material layer, a second source electrode layer, a second drain electrode layer, and a passivation layer stacked in this order from bottom to top.
6. The Micro light emitting diode display memory drive array according to claim 1, wherein the Micro-LED comprises a second source electrode layer, a second electrode layer, a first bump layer, a second bump layer, and MicroLED devices, wherein the MicroLED devices are connected to the drive unit through the first bump layer and the second bump layer.
7. The preparation method of the micro light emitting diode display memory driving array is characterized by comprising the following specific steps: Firstly, photoetching a bottom gate electrode area on a substrate layer, and carrying out metal deposition on a gate electrode layer and a gate metal layer by using electron beam evaporation equipment; Growing a first high-K material dielectric layer by using an atomic layer thin film deposition device, then photoetching a bottom gate electrode area, and using an electron beam to perform metal deposition on a floating gate layer to store charges as the floating gate layer; Growing a second high-K material dielectric layer serving as a tunneling layer by using an atomic layer film deposition device, performing grid patterning by using an ultraviolet lithography device, etching grid metal to form a through hole with a first source electrode layer, transferring a two-dimensional material, patterning a channel by using the ultraviolet lithography device, and etching a material outside the channel; patterning the source and drain electrodes by using ultraviolet exposure, performing metal deposition by using an electron beam evaporation device, and depositing a passivation protection layer at a low temperature by using a plasma enhanced chemical vapor deposition device; Patterning the electrode area by using ultraviolet exposure equipment, etching through holes to expose bottom metal, patterning the bump area by using ultraviolet exposure equipment again, depositing the bump metal by using electron beam evaporation equipment, and bonding the MicroLED devices with the bumps by using bonding equipment.
8. The method of claim 7, wherein the passivation layer is silicon dioxide and has a deposition thickness of 20nm.
9. A display comprising a micro light emitting diode display storage drive array as claimed in any one of claims 1 to 6.

Description

Micro light emitting diode display memory driving array, preparation method thereof and display Technical Field The invention relates to the technical field of display driving, in particular to a micro light emitting diode display storage driving array, a preparation method thereof and a display. Background Under the continuous push of science and technology wave, electronic products are deeply integrated into each dimension of social production and daily life, and become an important infrastructure for driving modern civilization evolution. With the unprecedented increase in popularity, the demands of users for electronic products also have a significant trend toward diversification, sceneries, and high performance. This requires that integrated circuit technology must span traditional general-purpose designs, evolving toward specific scenarios, with both high energy efficiency and high integration. Under the background, intelligent display is used as a core carrier for information presentation and man-machine interaction, the application boundaries of the intelligent display are rapidly expanding from traditional consumer electronic screens to the front edge fields such as Augmented Reality (AR), virtual Reality (VR), vehicle-mounted transparent display, wearable equipment, oversized commercial display and the like, and the importance of the intelligent display is increasingly highlighted. However, the deepening and expansion of application scenarios presents unprecedented system-level challenges to the display technology itself. The conventional display driving architecture generally adopts a paradigm of separating storage, calculation and pixel driving, data needs to be frequently carried among different functional modules, so that system delay is increased, power consumption is increased, and fundamental difficulty exists in realizing high-density and low-cost integrated integration of storage, calculation and display on a chip. Such architectures have been difficult to meet next generation smart displays with respect to their extremely high pixel density (PPI), ultra-high refresh rates, low latency interactions, and intrinsic intelligence (e.g., pixel-level image processing). Therefore, for those skilled in the art, a new display technical scheme capable of starting from the bottom layer of the device and fusing the storage and calculation functions in the original state is urgently needed, so as to break the constraint of the memory wall and the energy efficiency wall and open a new path integrating the storage, calculation and display. Disclosure of Invention The invention aims to provide a micro light emitting diode display memory driving array, a preparation method thereof and a display, so as to solve the problems in the background technology. In order to achieve the aim, the invention provides a Micro light emitting diode display memory driving array, which comprises a supporting substrate, a gating transistor, a floating gate storage transistor and Micro-LEDs, wherein the gating transistor and the floating gate storage transistor are used as driving units of the array, the Micro-LEDs are used as light emitting units of the array, and the light emitting units and the corresponding driving units are directly stacked and integrated in the vertical direction. Preferably, the array is connected in such a way that the drain electrode of the floating gate memory transistor of each column is connected, the anode of each cell MicroLED is connected to the source electrode of the floating gate memory transistor of the cell, the cathode of MicroLED of each row is connected, the source electrode of the gate transistor of each cell is connected to the gate electrode of the floating gate memory transistor, the gate electrode of each row is connected, and the drain electrode of each column is connected. Preferably, the support substrate is a silicon-based substrate, and a silicon dioxide passivation layer is deposited on the silicon-based substrate. Preferably, the gate transistor includes a gate metal layer, a first high-K material dielectric layer, a second channel layer, a first source electrode layer, a first drain electrode layer, and a passivation protection layer, which are stacked in order from bottom to top. Preferably, the floating gate memory transistor includes a gate electrode layer, a first high-K material dielectric layer, a floating gate layer, a second high-K material dielectric layer, a channel material layer, a second source electrode layer, a second drain electrode layer and a passivation protection layer stacked in this order from bottom to top. Preferably, the Micro-LED comprises a second source electrode layer, a second electrode layer, a first bump layer, a second bump layer and MicroLED devices, wherein the MicroLED devices are connected with the driving unit through the first bump layer and the second bump layer. . In another aspect, a method for manufacturing a micro light emitting d