CN-122028578-A - Light-control organic field effect transistor memory based on iridium complex phosphorescence material and preparation method thereof

CN122028578ACN 122028578 ACN122028578 ACN 122028578ACN-122028578-A

Abstract

The invention discloses a photoresponse organic field effect transistor memory based on iridium (III) complex phosphorescence material, and preparation and application thereof, belonging to the technical field of organic photoelectrons and information storage; the memory is prepared by introducing a functional layer containing a specific phosphorescence iridium (III) complex between a gate dielectric layer and a semiconductor layer, selecting iridium complexes with different energy level structures, respectively enabling devices to generate stable positive or negative threshold voltage drift under illumination, realizing light writing and light erasing functions, effectively promoting separation of photo-generated charges and interface deep capture by long-life excitons, obviously inhibiting charge leakage by matching with an insulating polymer main body, improving stability and tolerance of a photo-induced storage window, being suitable for preparing a high-performance and function-adjustable light response organic field effect transistor memory, and providing a new device foundation for developing full-light operation or photoelectric cooperative storage and logic systems by utilizing illumination to realize direct and nonvolatile regulation of storage states.

Inventors

Bian linyi
ZHANG YUE
CHEN JUN
ZHOU SHUAIQI
XU ZHAOCHENG
ZHANG GUANGWEI
XIE LINGHAI
PENG WANG

Assignees

南京邮电大学

Dates

Publication Date: 20260512
Application Date: 20260212

Claims (7)

1. A light-regulating organic field effect transistor memory based on iridium complex phosphorescence material comprises a substrate, a gate electrode arranged on the substrate, a gate insulating layer covering the gate electrode, a charge trapping layer arranged on the gate insulating layer, an organic semiconductor layer arranged on the charge trapping layer, and a source electrode and a drain electrode which are respectively electrically connected with the organic semiconductor layer, and is characterized in that the charge trapping layer comprises at least one phosphorescence iridium (III) complex.
2. A light-regulating organic field effect transistor memory based on iridium complex phosphorescent material according to claim 1, wherein the phosphorescent iridium (III) complex comprises the following structural compounds: 。
3. The light-regulating organic field effect transistor memory device of claim 1, wherein said gate insulating layer has a thickness of 50-300 nm a.
4. The light-regulating organic field-effect transistor memory device of claim 1, wherein said charge trapping layer has a thickness of 10-30 nm a.
5. The light-regulating organic field-effect transistor memory device of claim 1, wherein said organic semiconductor layer has a thickness of 30-50 nm a.
6. The light-regulating organic field-effect transistor memory based on iridium complex phosphorescent material according to claim 1, wherein the thicknesses of the source electrode, the drain electrode and the gate electrode are each independently 50-100 nm.
7. Use of a phosphorescent iridium (III) complex in a light-modulating organic field effect transistor memory, the phosphorescent iridium (III) complex comprising the following structural compound: 。

Description

Light-control organic field effect transistor memory based on iridium complex phosphorescence material and preparation method thereof Technical Field The invention relates to the technical field of organic optoelectronic devices and information storage, in particular to an Organic Field Effect Transistor (OFET) memory which realizes controllable, stable and opposite-polarity light response storage behaviors by using different phosphorescence iridium complexes. Background Organic field effect transistor memory is an important information storage device that combines the switching characteristics of transistors with nonvolatile memory functions. The core of such devices is to realize different conductive states by regulating the carrier concentration in the channel and to keep them for a long time, thereby storing data. Traditionally, such state changes have relied primarily on electrical signals, i.e., by applying different gate voltages to effect writing and erasing of information. However, with the development of information technology, there is a higher demand for the function of a memory, which is expected to be capable of sensing and storing information from the external environment such as light, pressure, etc., in addition to an electric signal. The light is used as a high-speed, remote and easily-regulated information carrier, and the light response characteristic is introduced into the organic field effect transistor memory, so that the application potential of the light in the fields of optical communication, imaging sensing, bionic vision and the like can be greatly expanded. To develop light-responsive memories, researchers have explored a variety of technological paths. One common approach is to incorporate photoactive materials. For example, there are studies to integrate photochromic molecules into transistor structures, and to use light to induce molecular structure changes, thereby achieving modulation of the electrical characteristics of the device. Such studies have in principle demonstrated the feasibility of using the optical properties of materials to alter the memory behavior of transistors. Another representative approach is directed to the use of nanostructures. Chinese patent No. CN101335332a discloses an "optical storage unit, optical storage and method of manufacturing the same". The core of the technical scheme is that metal or metal oxide nano points are doped in an organic semiconductor layer to serve as a storage layer. Specific nano dots are introduced into an active layer of the device, and can capture photo-generated carriers under illumination and keep the charges for a long time after the illumination is stopped, so that the durability shift of the threshold voltage of the transistor is caused, and the nonvolatile storage of optical information is realized. Together, these works lay an important technological base for developing new types of light-responsive memories. Among the many photoactive materials, phosphorescent materials, particularly complexes based on heavy metals (e.g., iridium, platinum), exhibit unique advantages. The material can efficiently convert singlet excitons generated after light energy absorption into triplet excitons with long service life due to strong spin orbit coupling action of heavy metal atoms. The long-life excited state provides a more sufficient time window for the subsequent photophysical and photochemical processes, so that the excited state is widely applied to the fields of luminescence, sensing, photocatalysis and the like. The study of Zhao et al （Zhao Q, Liu S J, Huang W. Promising optoelectronic materials: polymers containing phosphorescent iridium (III) complexes[J]. Macromolecular rapid communications, 2010, 31(9-10): 794-807.） further indicated that the use of polymers containing phosphorescent iridium (III) complexes as optoelectronic materials has great potential, which combines the excellent photophysical properties of metal complexes with good processability of the polymers. This inspires the idea of whether the properties of such materials can be applied in the memory field, and the development of a more excellent-performance photo-responsive memory device. However, although the application of phosphorescent materials in optoelectronic devices has been widely studied, its in-depth application in organic field effect transistor memories, especially how to systematically use different phosphorescent materials to realize differentiated and synergistic optical storage functions (e.g. to realize efficient optical writing and optical erasing, respectively), is still a subject to be explored in depth. The existing researches focus on the light response phenomenon of a single material or focus on the utilization of light to assist in regulating the general electrical properties of a device, and a light storage unit system with definite and complementary functions cannot be constructed from the design of the intrinsic energy level