CN-122028580-A - Environment-triggered memristor with nonvolatile storage function and preparation method thereof

CN122028580ACN 122028580 ACN122028580 ACN 122028580ACN-122028580-A

Abstract

The invention discloses an environment-triggered memristor with a nonvolatile storage function and a preparation method thereof, wherein the method comprises the steps of 1, adding macromolecule matrix powder with hydrophilic groups into acetic acid solution, stirring to obtain macromolecule matrix solution, adding inorganic salt with moisture absorption property into the macromolecule matrix solution, carrying out ultrasonic treatment, and filtering to obtain precursor solution; the method comprises the steps of 2, washing and drying a flexible PI film with an ITO conductive layer to obtain a clean substrate, 3, spin-coating a precursor solution on the surface of the ITO conductive layer of the clean substrate, airing, drying to form a high-salt doped polymer matrix layer on the surface of the ITO conductive layer, and 4, sputtering active metal and protective metal on the surface of the high-salt doped polymer matrix layer in sequence to respectively form an active metal layer and a metal protective layer, thereby obtaining the environment-triggered memristor with a nonvolatile storage function. The invention realizes the coupling of environment threshold sensing and nonvolatile storage, and improves the environment adaptability and safety of the memristor.

Inventors

DAI YANG
Chao Yiwen
ZHANG YAN
ZUO JING
LI ZHEXIN
ZHAO WU

Assignees

西北大学

Dates

Publication Date: 20260512
Application Date: 20260116

Claims (10)

1. The preparation method of the environment-triggered memristor with the nonvolatile storage function is characterized by comprising the following steps of: Step 1, adding polymer matrix powder with hydrophilic groups into acetic acid solution with the mass fraction of 1% -10%, stirring to obtain polymer matrix solution with the mass fraction of 1.0 wt% -5.0: 5.0 wt%, and then adding inorganic salt with the moisture absorption characteristic into the polymer matrix solution according to the mass ratio (0.3-0.7) of the inorganic salt to the polymer matrix solution to obtain precursor solution, wherein the inorganic salt is uniformly dispersed by ultrasonic treatment to obtain high-salt doped polymer matrix solution, and filtering the high-salt doped polymer matrix solution to remove impurities; Step 2, cleaning the flexible PI film with the ITO conductive layer and drying moisture to obtain a clean substrate; Step 3, spin-coating a precursor solution on the surface of an ITO conductive layer of a clean substrate, airing 12-48 h under the condition of a dry environment, transferring to an oven, and drying 5-30 min at 60-100 ℃ to form a high-salt doped polymer matrix layer on the surface of the ITO conductive layer; And 4, sputtering active metal on the surface of the high-salt doped polymer matrix layer by using a magnetron sputtering system and by using a mask plate under the environment with the vacuum degree not lower than 10 -3 Pa, forming an active metal layer on the surface of the high-salt doped polymer matrix layer, then sputtering protective metal on the surface of the active metal layer, and forming a metal protection layer on the surface of the active metal layer to obtain the environment-triggered memristor with the nonvolatile storage function, wherein the active metal is metal Ti, al, zn, mg or Ag, and the protective metal is metal Cu, pt or Au.
2. The method for preparing the environment-triggered memristor with the nonvolatile memory function according to claim 1, wherein the polymer matrix in the step 1 is a natural polymer matrix or a synthetic polymer matrix, wherein the natural polymer matrix is chitosan, collagen or gelatin, and the synthetic polymer matrix is polyethylenimine or polyvinyl alcohol.
3. The method for manufacturing the environment-triggered memristor with the nonvolatile storage function according to claim 1, wherein the stirring in the step 1 is magnetic stirring for 12-24 hours.
4. The method for manufacturing the environment-triggered memristor with the nonvolatile memory function of claim 1, wherein the mass ratio of the inorganic salt to the polymer matrix in the step 1 is 0.5:1.
5. The method for manufacturing the environment-triggered memristor with the nonvolatile memory function according to claim 1, wherein the inorganic salt with the hygroscopic property in the step 1 is an alkali metal halide or an alkaline earth metal halide, wherein the alkali metal halide is sodium chloride, lithium chloride, potassium chloride or potassium iodide, and the alkaline earth metal halide is magnesium chloride or calcium chloride.
6. The method for preparing the environment-triggered memristor with the nonvolatile memory function according to claim 1 is characterized in that the specific process of the step 2 is that a flexible PI film with an ITO conductive layer is sequentially placed into acetone, ethanol and deionized water, respectively subjected to ultrasonic cleaning for 10-20 min, and then surface moisture is dried by nitrogen, so that a clean substrate is obtained.
7. The method for preparing the environment-triggered memristor with the nonvolatile memory function according to claim 1, wherein the step 3 is characterized in that the process of spin-coating the precursor solution on the surface of the clean substrate comprises spin-coating 5-15 s at a rotation speed of 300-800 rpm, so that the precursor solution covers the surface of the ITO conductive layer of the clean substrate under the action of centrifugal force, and spin-coating 20-60 s at a rotation speed of 3000-7000 rpm, so that the precursor solution is uniformly spread on the surface of the ITO conductive layer.
8. The method for manufacturing the environment-triggered memristor with the nonvolatile memory function according to claim 1, wherein the thickness of the metal protection layer in the step 4 is not greater than that of the active metal layer, and the thickness of the metal protection layer is 100-500 nm.
9. The method for manufacturing the environment-triggered memristor with the nonvolatile memory function according to claim 1, wherein the sputtering of metal titanium in the step 4 is performed with a sputtering power of 60-150W, a sputtering power of 20-60 min, and the sputtering of metal copper is performed with a sputtering power of 60-150W, a sputtering power of 10-30 min.
10. The environment-triggered memristor with nonvolatile memory function prepared by the method of any one of claims 1 to 9 is characterized by comprising a PI film, an ITO conductive layer, a high-salt doped polymer matrix layer, an active metal layer and a metal protective layer which are sequentially stacked from bottom to top.

Description

Environment-triggered memristor with nonvolatile storage function and preparation method thereof Technical Field The invention belongs to the technical field of semiconductor memories and brain-like computing, and particularly relates to an environment-triggered memristor with a nonvolatile memory function and a preparation method thereof. Background With the rapid development of artificial intelligence and internet of things (IOT), the traditional von neumann architecture faces a 'storage wall' and an energy efficiency bottleneck, and causes memristors to be widely focused as core devices for next-generation nonvolatile storage and brain-like computation, particularly biological memristors based on natural biological materials (such as chitosan, cellulose, silk proteins and the like) have great application potential in the fields of implanted medical electronics and flexible skin electronics due to excellent biocompatibility, degradability and flexibility. Biological memristors are undergoing a transition from single storage function to multi-mode sensing-storage integration, in the related technical development, the construction of memristors by utilizing ion conductive polymers (such as polymer electrolytes doped with salts) has become a research hot spot, and the ion migration behavior of nerve synapses can be effectively simulated by introducing inorganic salt ions into polymer matrixes, however, the existing biomass memristors generally adopt low-concentration ion doping (such as biomass solid-state electrolyte memristors taking chitosan as matrixes and doping small amounts of acid or salt with concentration less than 10% to assist ion migration) or single polymer matrixes as functional layers, and the devices can be easily triggered to resist the action under normal dry conditions due to the fact that the internal ion migration energy barrier is low and the preset conductive paths are provided in the conventional environment, and the low triggering threshold characteristic causes the devices to still face two serious challenges in practical application: Firstly, stability problems caused by environmental interference are that on one hand, most biological macromolecules are extremely sensitive to environmental humidity, humidity is often regarded as a negative interference factor in traditional researches, so that initial resistance fluctuation and switching voltage drift of a device are caused, even if the device is invalid, in order to overcome the problem, the prior art usually relies on a complex physical packaging means to isolate environmental water vapor, so that when the device faces dynamic humidity fluctuation, the technical problems of environment adaptability and insufficient parameter stability, including serious initial resistance drift and poor switching voltage consistency, are often presented, meanwhile, the complexity of a preparation process is increased, the flexibility of the device is reduced, and on the other hand, the device is extremely easy to be interfered by external stray electric signals or electromagnetic noise in a non-working state, logic false overturn is generated, and the technical problems of poor physical safety of data storage and missing of a hardware alignment control mechanism are caused; The second, deficiency of the physical layer security mechanism, the traditional memory device can read and write data in the power-on state, lack of physical layer admission control combined with environment perception, in the field of hardware security, how to limit the writing operation of the memory by using the environment parameter as the physical key is still a topic to be overcome. Disclosure of Invention The invention aims to provide an environment-triggered memristor with a nonvolatile storage function and a preparation method thereof, which realize the coupling of environment threshold perception and nonvolatile storage and improve the environmental adaptability and safety of the memristor. The invention is realized by the following technical scheme: the preparation method of the environment-triggered memristor with the nonvolatile storage function comprises the following steps: Step 1, adding polymer matrix powder with hydrophilic groups into acetic acid solution with the mass fraction of 1% -10%, stirring to obtain polymer matrix solution with the mass fraction of 1.0 wt% -5.0: 5.0 wt%, and then adding inorganic salt with the moisture absorption characteristic into the polymer matrix solution according to the mass ratio (0.3-0.7) of the inorganic salt to the polymer matrix solution to obtain precursor solution, wherein the inorganic salt is uniformly dispersed by ultrasonic treatment to obtain high-salt doped polymer matrix solution, and filtering the high-salt doped polymer matrix solution to remove impurities; Step 2, cleaning the flexible PI film with the ITO conductive layer and drying moisture to obtain a clean substrate; Step 3, spin-coating a precursor sol