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CN-122028581-A - Solar cell, preparation method, photovoltaic device, electricity utilization device and power generation device

CN122028581ACN 122028581 ACN122028581 ACN 122028581ACN-122028581-A

Abstract

The application discloses a solar cell and a preparation method thereof, a photovoltaic device, an electric device and a power generation device, wherein the solar cell comprises a first electrode layer, a functional layer and a second electrode layer which are sequentially laminated, the functional layer comprises a perovskite layer, the perovskite layer has a chemical formula of ABX 3 , wherein A ions comprise at least one of inorganic or organic or inorganic mixed monovalent cations, B ions comprise at least one of inorganic divalent cations, X ions comprise at least one of inorganic or organic inorganic mixed monovalent anions, a passivation layer is arranged on one side interface of the perovskite layer, the passivation layer comprises SnOx and/or GeOx, and the value range of X is 1-2. According to the application, the passivation layer is arranged on one side interface of the perovskite layer, and comprises SnOx and/or GeOx, so that the perovskite surface passivation function is realized, and the open-circuit voltage and the photoelectric conversion efficiency of the battery are effectively improved.

Inventors

  • Pan Haixi
  • ZHOU HONGMEI
  • WANG SHIDAN
  • YE CHUYING
  • Request for anonymity
  • OUYANG CHUYING

Assignees

  • 宁德时代新能源科技股份有限公司

Dates

Publication Date
20260512
Application Date
20241111

Claims (17)

  1. 1. The solar cell is characterized by comprising a first electrode layer, a functional layer and a second electrode layer which are sequentially stacked, wherein the functional layer comprises a perovskite layer, the perovskite layer has a chemical formula of ABX 3 , wherein an ion A comprises at least one of inorganic or organic or inorganic mixed monovalent cations, an ion B comprises at least one of inorganic divalent cations, an ion X comprises at least one of inorganic or organic inorganic mixed monovalent anions, a passivation layer is arranged on one side interface of the perovskite layer, the passivation layer comprises SnOx and/or GeOx, and the value range of X is 1-2.
  2. 2. The solar cell of claim 1, wherein the perovskite layer has a chemical formula of a (Sn a Pb 1-a-b M b )X 3 , wherein M ions include at least one of inorganic divalent cations, a ranges from 0.4 to 0.6, and b ranges from 0to 0.1.
  3. 3. The solar cell according to claim 1 or 2, wherein the mass ratio of Sn element to Pb element in the B element is in the range of 4:6 to 6:4.
  4. 4. The solar cell according to any one of claims 1 to 3, wherein a thickness of the passivation layer is 0.1nm or more and 10nm or less.
  5. 5. The solar cell according to claim 4, wherein the passivation layer has a thickness of 0.1nm or more and 3nm or less.
  6. 6. The solar cell according to any one of claims 1 to 5, wherein a molar ratio of Sn element in B element of an interface of the perovskite layer facing the passivation layer is greater than a molar ratio of Sn element in B element inside the perovskite layer.
  7. 7. The solar cell of any one of claims 1-6, wherein the a ions comprise monovalent metal cations and/or monovalent organic cations, the monovalent metal cations comprise one or more of Li + 、Na + 、K + 、Rb + and Cs + , the monovalent organic cations comprise one or more of organic amine ions, formamidine ions, and imidazole-type ions, and/or the B ions comprise at least one of Sn 2+ 、Pb 2+ 、Zn 2+ 、Ti 2+ 、Ni 2+ 、Fe 2+ 、Co 2+ 、Cu 2+ 、Ga 2+ 、Ge 2+ 、Be 2+ 、Mg 2+ 、Ca 2+ 、Sr 2+ 、Ba 2 + 、In 2+ 、Mn 2+ 、Cr 2+ 、Mo 2+ and Eu 2+ , the X ions comprise one or more of halogen ions and halogen-like ions, and the X ions comprise one or more of F - 、Cl - 、Br - 、I - 、CN - 、CH 3 COO - 、SCN - 、BF 4 - 、SeCN - 、PF 6 - .
  8. 8. The solar cell of any one of claims 1-7, wherein the perovskite layer has a bandgap of 1.2ev to 1.4ev.
  9. 9. The solar cell according to any one of claims 1 to 8, further comprising a hole transport layer and/or an electron transport layer, wherein one of the hole transport layer and the electron transport layer is provided on a side of the perovskite layer remote from the passivation layer, and the other of the hole transport layer and the electron transport layer is provided on a side of the passivation layer remote from the perovskite layer.
  10. 10. A method of manufacturing a solar cell, comprising: Providing one of a first electrode layer or a second electrode layer; Providing a perovskite layer on the one of the first electrode layer or the second electrode layer, wherein the perovskite layer has a chemical formula of ABX 3 , wherein ions a comprise at least one of inorganic or organic-inorganic mixed monovalent cations, ions B comprise at least one of inorganic divalent cations, and ions X comprise at least one of inorganic or organic-inorganic mixed monovalent anions; forming a passivation layer on the surface of the perovskite layer, wherein the passivation layer comprises SnOx and/or GeOx, and the value range of x is 1-2; The other of the first electrode layer or the second electrode layer is disposed on the passivation layer.
  11. 11. The method of claim 10, wherein forming a passivation layer on the surface of the perovskite layer comprises oxidizing Sn atoms on the surface of the perovskite layer to form SnOx.
  12. 12. The method of claim 11, wherein the step of forming a passivation layer on the surface of the perovskite layer comprises introducing an O source, introducing a Sn source and/or a Ge source, and forming SnOx and/or GeOx on the surface of the perovskite layer.
  13. 13. The method of manufacturing a solar cell according to claim 12, wherein the O source comprises at least one of air, oxygen, water, hydrogen peroxide, and tin oxide, and/or The Sn source comprises at least one of stannous chloride, stannic chloride, stannous sulfate, tetra (dimethylamino) tin (IV), tin and tin oxide, and/or The Ge source comprises at least one of germanium tetrachloride, germanium, and germanium oxide.
  14. 14. The method for manufacturing a solar cell according to any one of claims 10 to 13, wherein a passivation layer is formed on the surface of the perovskite layer by at least one of atomic layer deposition, plasma deposition, vacuum evaporation and physical vapor deposition.
  15. 15. A photovoltaic device comprising a solar cell according to any one of claims 1 to 9 or a method of manufacturing a solar cell according to any one of claims 10 to 14.
  16. 16. An electrical device comprising a solar cell according to any one of claims 1 to 9 or a method of manufacturing a solar cell according to any one of claims 10 to 14.
  17. 17. A power generation device characterized by comprising the solar cell according to any one of claims 1 to 9 or comprising the method of manufacturing a solar cell according to any one of claims 10 to 14.

Description

Solar cell, preparation method, photovoltaic device, electricity utilization device and power generation device Technical Field The application relates to the technical field of solar cells, in particular to a solar cell, a preparation method thereof, a photovoltaic device, an electricity utilization device and a power generation device. Background The perovskite solar cell is used as a third-generation solar cell, adopts a perovskite material as a light absorption layer material, and has the remarkable performance advantages of high light absorption coefficient, carrier mobility, direct and controllable optical band gap and the like. The difference in crystallization rate of divalent cations in the perovskite layer of the narrow band gap perovskite solar cell leads to the enlargement of perovskite surface defects, resulting in low photoelectric conversion efficiency of the solar cell. Disclosure of Invention In view of the above technical problems, the application provides a solar cell, a preparation method, a photovoltaic device, an electricity utilization device and a power generation device, so as to solve the problem of low photoelectric conversion efficiency of the solar cell. According to the first technical scheme, the solar cell comprises a first electrode layer, a functional layer and a second electrode layer which are sequentially stacked, wherein the functional layer comprises a perovskite layer, the chemical formula of the perovskite layer is ABX 3, wherein an ion A comprises at least one of inorganic or organic or inorganic mixed monovalent cations, an ion B comprises at least one of inorganic divalent cations, an ion X comprises at least one of inorganic or organic-inorganic mixed monovalent anions, a passivation layer is arranged on one side interface of the perovskite layer, and the passivation layer comprises SnOx and/or GeOx, wherein the value range of X is 1-2. In the technical scheme of the embodiment of the application, the solar cell is a narrow-band gap perovskite solar cell, the chemical formula of the perovskite layer is ABX 3, B ions comprise at least one of inorganic divalent cations, and due to different crystallization nucleation rates of the divalent cations, part of the divalent cations are enriched on the surface of the perovskite, and the passivation layer comprising SnOx and/or GeOx is arranged on the surface of the perovskite, so that the perovskite can be passivated, and the photoelectric conversion efficiency of the solar cell is improved. In some embodiments, the perovskite layer may also have a chemical formula of a (Sn aPb1-a-bMb)X3, where the M ion includes at least one of inorganic divalent cations, a has a value in the range of 0.4 to 0.6, and b has a value in the range of 0 to 0.1. In the chemical formula of the perovskite layer, the inorganic divalent cations comprise Sn 2+ and Pb 2+, and as the crystallization nucleation rate of Sn 2+ is faster than that of Pb 2+, sn 2+ is enriched on the surface of the perovskite, and Sn atoms enriched on the surface of the perovskite are oxidized to form SnOx, so that a passivation effect can be achieved, a passivation layer of one side interface of the perovskite layer is formed, and therefore, defects on the surface of the perovskite, particularly tin type defects, can be passivated, composite centers are reduced, and the photoelectric conversion efficiency of the solar cell 100 is improved. In some embodiments, in the B element, the mass ratio of Sn element to Pb element is 4:6-6:4. In the technical scheme of the embodiment of the application, the mass ratio of Sn element to Pb element is in the range, so that the narrow-band-gap perovskite solar cell with high stability and high photoelectric conversion efficiency is formed. In some embodiments, the passivation layer has a thickness of 0.1nm or more and 10nm or less. In the technical scheme of the embodiment of the application, the thickness of the passivation layer is in the range, a new interface is not generated, a thinner passivation layer can be formed, the perovskite surface defect is passivated, the composite center is reduced, and the open-circuit voltage of the solar cell is improved, so that the photoelectric conversion efficiency of the solar cell is improved. In some embodiments, the passivation layer has a thickness of 0.1nm or more and 3nm or less. In the technical scheme of the embodiment of the application, the thickness of the passivation layer is in the range, a new interface is not generated, a thinner passivation layer can be formed, the perovskite surface defect is passivated, the composite center is reduced, and the open-circuit voltage of the solar cell is improved, so that the photoelectric conversion efficiency of the solar cell is improved. In some embodiments, the molar ratio of Sn element in the B element at the interface of the perovskite layer towards the passivation layer is greater than the molar ratio of Sn element in the B element inside