Search

CN-122028586-A - Incorporating MoS2PEDOT (polymer electrolyte oxygen) PSS (power system stabilizer)/n-Si solar cell with quantum dots and preparation method thereof

CN122028586ACN 122028586 ACN122028586 ACN 122028586ACN-122028586-A

Abstract

The invention discloses a PEDOT (proton exchange membrane)/N-Si solar cell doped with MoS 2 quantum dots and a preparation method thereof, comprising (1) preparing an N-type silicon wafer for preparing a photovoltaic device. (2) MoS 2 quantum dot aqueous solution or powder, dimethyl sulfoxide (DMSO) and surfactant (Triton X-100) are added into PEDOT PSS aqueous solution, and the precursor solution is prepared after stirring. (3) preparing HF solution for removing oxide on two sides of the silicon wafer. And then cleaning the residual HF acid solution on the silicon wafer by using deionized water, and finally purging and drying the silicon wafer by using nitrogen. (4) And (3) spin-coating the precursor solution prepared in the step (2) on one side of the silicon wafer, and then annealing to form a film. (5) And (3) preparing a front silver electrode of the silicon wafer on the PEDOT-MoS 2 film of the sample obtained in the step (4). And (6) depositing an entire Ag electrode on the other side of the silicon wafer. The battery manufacturing method is simple and easy to implement, and can be produced in a large scale.

Inventors

  • CUI YIQIAN
  • SUN JUNYAN
  • ZHANG YOUBING
  • DONG YANGMING
  • CHEN SHUMIN
  • HU WENYA
  • TANG WENTAO
  • YI RONGKE
  • YIN LAN
  • HUANG KAI
  • ZOU YUNFENG

Assignees

  • 荆楚理工学院
  • 国网湖北省电力有限公司荆门供电公司
  • 荆门市荆科盛和电力技术有限责任公司

Dates

Publication Date
20260512
Application Date
20260227

Claims (9)

  1. 1. The preparation method of the PEDOT/n-Si solar cell doped with MoS 2 quantum dots is characterized by comprising the following steps of: (1) Preparing an N-type silicon wafer for preparing a photovoltaic device; (2) Adding MoS 2 quantum dot aqueous solution or powder, dimethyl sulfoxide and surfactant into PEDOT PSS aqueous solution, and stirring to obtain precursor solution; (3) Preparing HF solution for removing oxides on two sides of the silicon wafer, then cleaning residual HF acid solution on the silicon wafer by deionized water, and finally purging and drying the silicon wafer by nitrogen; (4) Spin-coating the precursor solution prepared in the step (2) on one side of a silicon wafer, and then annealing to form a film; (5) Preparing a front silver electrode of a silicon wafer on the PEDOT-MoS 2 film of the sample obtained in the step (4); (6) And depositing an entire Ag electrode on the other side of the silicon wafer.
  2. 2. The PEDOT/N-Si solar cell doped with MoS 2 quantum dots and the preparation method thereof according to claim 1, wherein in the step (1), the resistivity of the N-type silicon wafer is 1-3Ω & cm, and the thickness is 160+ -10 um.
  3. 3. The PEDOT:PSS/n-Si solar cell with MoS 2 quantum dots and the method for producing the same according to claim 1, wherein in the step (2), the concentration of MoS 2 quantum dots in the PEDOT:PSS solution is 0.01-1wt.%. The DMSO solution and the surfactant Triton X-100 are used in 1-5wt.% and 0.1-0.2wt.%, respectively, and the stirring time is 2-3 hr.
  4. 4. The PEDOT: PSS/n-Si solar cell doped with MoS 2 quantum dots and the method for manufacturing the same according to claim 1, wherein in the step (3), the ratio of HF solution is 1mol/L HF to deionized water=1:8.
  5. 5. The PEDOT/n-Si solar cell doped with MoS 2 quantum dots and the preparation method thereof according to claim 1, wherein in the step (4), spin coating adopts a two-step method, the first step time is 4-6s, the rotating speed is 500-550rpm, and the second step time is 20-30s, and the rotating speed is 1000-1500rpm. And then annealing in the atmospheric environment, wherein the annealing temperature and the annealing time are respectively 100 ℃ and 10min.
  6. 6. The PEDOT: PSS/n-Si solar cell with MoS 2 quantum dots incorporated therein and the method for manufacturing the same according to claim 1, wherein in the step (5), a front silver electrode of a silicon wafer is manufactured by a thermal evaporation method, the evaporation process is divided into two steps, the first step is to deposit 10-20nm at a deposition rate of 0.1-0.2A/s, the second step is to deposit 90-100nm at a deposition rate of 0.1-0.2A/s, the silver electrode is formed into an H-shaped grid line pattern using a mask, and the thickness of the Ag electrode is 50-100nm.
  7. 7. The PEDOT/n-Si solar cell doped with MoS 2 quantum dots and the preparation method thereof according to claim 1, wherein in the step (6), a thermal evaporation method is adopted, the evaporation process is divided into two steps, the first step is to deposit 10-30nm at a deposition rate of 0.1-0.2 a/s, the second step is to deposit 80-90nm at a deposition rate of 0.2-0.5 a/s, and the thickness of the Ag electrode layer is 50-100nm.
  8. 8. The PEDOT-PSS/N-Si solar cell doped with MoS 2 quantum dots and the preparation method thereof are characterized in that the solar cell structure prepared by the method comprises an N-type silicon wafer, a PEDOT-MoS 2 film, an Ag electrode layer and an Ag grid line electrode, namely a front silver electrode, wherein the N-type silicon wafer with the resistivity of 1-3 Ω & cm and the thickness of 160+/-10 mu m is selected as a silicon substrate, the PEDOT-MoS 2 film is spin-coated on one surface of the N-type silicon wafer, the whole Ag electrode layer is deposited on the other surface of the N-type silicon wafer, and the Ag grid line electrode of the silicon wafer is arranged on the PEDOT-MoS 2 film.
  9. 9. The PEDOT-PSS/N-Si solar cell doped with MoS 2 quantum dots and the preparation method thereof according to any one of claims 1 to 7, wherein the solar cell structure prepared by the method comprises an N-type silicon wafer, an SiO 2 layer, an (n+) -poly-Si layer, a PEDOT-MoS 2 film, an Ag electrode layer and an Ag grid electrode, namely a front silver electrode, wherein the N-type silicon wafer with a single-sided TOPCon structure (SiO 2 /N (+) -poly-Si) is selected as a silicon substrate, the PEDOT-MoS 2 film is spin-coated on one side of the N-type silicon wafer, the whole Ag electrode layer is deposited on the (n+) -poly-Si layer, and the Ag grid electrode of the silicon wafer is arranged on the PEDOT-MoS 2 film.

Description

PEDOT (polymer electrolyte oxygen) PSS/n-Si solar cell doped with MoS 2 quantum dots and preparation method thereof Technical Field The invention relates to the field of solar cells, in particular to a PEDOT (proton exchange system)/n-Si solar cell doped with MoS 2 quantum dots. Background Under the drive of the 'double carbon' target, the photovoltaic industry in China rapidly develops. In recent years, PEDOT PSS/n-Si solar cells have become an important direction for researching high-efficiency low-cost crystalline silicon cells due to the advantages of abundant materials, easiness in processing and the like. Compared with the traditional crystalline silicon solar cell, the crystalline silicon heterojunction solar cell doped with PEDOT (polymer electrolyte) PSS (polymer electrolyte) has the advantages of high theoretical efficiency, simplicity in manufacture, low energy consumption, small pollution and the like, and the cell is widely applied to the photovoltaic field by virtue of the advantages. However, the high electron affinity of PEDOT PSS and the insufficient conduction band offset degree lead to lower electron potential barrier formed between the PEDOT PSS and n-Si, and electrons in n-Si easily cross the potential barrier to reach the PEDOT PSS hole transport layer in a tunneling mode, so that the composite current is increased and the performance of the solar cell is reduced, which is a technical problem to be solved urgently at present. In this regard, the existing PEDOT: PSS/n-Si solar cell structure needs to be improved to effectively block electrons in n-Si from entering the PEDOT: PSS hole transport layer. Aiming at the lower contact potential barrier between PEDOT and PSS and n-Si, the invention provides the PEDOT-MoS 2 film with proper MoS 2 quantum dot doping concentration, which improves the work function of PEDOT and PSS, reduces the surface valence band energy level, improves the electron blocking capability of the PEDOT and PSS film and improves the battery conversion efficiency. Disclosure of Invention The invention aims to solve the problem that the contact potential barrier between PEDOT and PSS and n-Si is low in the current PEDOT and PSS/n-Si silicon solar cell, and provides a PEDOT and PSS/n-Si solar cell with a PEDOT-MoS 2 film with proper MoS 2 quantum dot doping concentration. The technology comprises the following steps: (1) And preparing an N-type silicon wafer for preparing the photovoltaic device. (2) MoS 2 quantum dot aqueous solution or powder, dimethyl sulfoxide (DMSO) and surfactant (Triton X-100) are added into PEDOT PSS aqueous solution, and the precursor solution is prepared after stirring. (3) An HF solution is configured to remove oxides from both sides of the wafer. And then cleaning the residual HF acid solution on the silicon wafer by using deionized water, and finally purging and drying the silicon wafer by using nitrogen. (4) And (3) spin-coating the precursor solution prepared in the step (2) on one side of the silicon wafer, and then annealing to form a film. (5) And (3) preparing a front silver electrode of the silicon wafer on the PEDOT-MoS 2 film of the sample obtained in the step (4). (6) And depositing an entire Ag electrode on the other side of the silicon wafer. Specific: In the step (1), the resistivity of the N-type silicon wafer is 1-3 omega cm, and the thickness is 160+/-10 mu m. In step (2), the concentration of MoS 2 quantum dots in the PEDOT: PSS solution is 0.01-1wt.%. The DMSO solution and the surfactant Triton X-100 are used in 1-5wt.% and 0.1-0.2wt.%, respectively, and the stirring time is 2-3 hr. In the step (3), the ratio of HF solution is 1mol/L HF to deionized water=1:8. In the step (4), the spin coating adopts a two-step method, wherein the first step is 4-6s in duration and the rotating speed is 500-550rpm, and the second step is 20-30s in duration and the rotating speed is 1000-1500rpm. And then annealing in the atmospheric environment, wherein the annealing temperature and the annealing time are 100 ℃ and 10min respectively (except the method, any form of film forming technology can be adopted). In the step (5), a front silver electrode of the silicon wafer is prepared by adopting a thermal evaporation method, the evaporation process is divided into two steps, the first step is to deposit 10-40nm at a deposition rate of 0.1-0.2A/s, the second step is to deposit 75-90nm at a deposition rate of 0.15-0.2A/s, the silver electrode forms an H-shaped grid line pattern by using a mask, and the thickness of the Ag electrode is 50-100nm. In the step (6), a thermal evaporation method is adopted, the evaporation process is divided into two steps, wherein the first step is to deposit 10-25nm at a deposition rate of 0.1-0.2A/s, the second step is to deposit 90-100nm at a deposition rate of 0.2-0.5A/s, and the thickness of the Ag electrode is 50-100nm. (any form of electrode preparation technique may be employed in addition to the above methods).