CN-122028587-A - Photoelectric device, preparation method, electricity utilization device and power generation device

CN122028587ACN 122028587 ACN122028587 ACN 122028587ACN-122028587-A

Abstract

The application relates to a photoelectric device, a preparation method, an electric device and a power generation device. The photoelectric device comprises a perovskite layer, wherein the perovskite layer comprises a first perovskite material, the perovskite layer comprises a first surface and a second surface which are away from each other in the thickness direction of the perovskite layer, the perovskite layer comprises a first area which is positioned near the first surface and a second area which is positioned on a bulk phase part of the perovskite layer, the first area is positioned between the first surface and the second area, the first perovskite material in the first area moves upwards (when the first surface is used for transmitting electricity) or downwards (when the first surface is used for transmitting holes) relative to the conduction band bottom, the fermi level and the valence band top of the first perovskite material in the second area, the movement amplitude of at least one of the first surface is larger than or equal to 0.08eV, and the energy level change amplitude of at least two of the conduction band bottom, the valence band top and the band gap is smaller. The photoelectric device has high energy conversion efficiency.

Inventors

LIN XUESONG
XIAO LILI
LI CHUNYAN
LIN XINYUE
PAN CONGRONG
LV MINGSHENG
LI XUEKE
Chang Zhongfu
LI WEI

Assignees

宁德时代新能源科技股份有限公司

Dates

Publication Date: 20260512
Application Date: 20260110

Claims (20)

1. The photoelectric device is characterized by comprising a perovskite layer, wherein the perovskite layer comprises a first perovskite material, and the perovskite layer is provided with a first surface and a second surface which are opposite in the thickness direction of the perovskite layer; A first region with a thickness of 5-10 nm exists in a range extending from the first surface toward the inside of the perovskite layer along the Z direction by 20nm, and a second region with a thickness of 5-10 nm exists in a range extending from the thickness center of the perovskite layer toward the first surface and the second surface by 10nm respectively; the difference between the energy levels of the top of the valence band of the first perovskite material in the first region relative to the first perovskite material in the second region is denoted as a Δ , the difference between the energy levels of the fermi level of the first perovskite material in the first region relative to the first perovskite material in the second region is denoted as B Δ , and the difference between the energy levels of the bottom of the conduction band of the first perovskite material in the first region relative to the first perovskite material in the second region is denoted as C Δ ; wherein the perovskite layer satisfies at least two of three characteristics: (t 1) the absolute value of the difference between a Δ and B Δ is less than or equal to 0.05eV; (t 2) the absolute value of the difference between C Δ and B Δ is less than or equal to 0.05eV; (t 3) an absolute value of a band gap difference of the first perovskite material relative to the first perovskite material of the second region within the first region is less than or equal to 0.02eV; Where the first surface is for transporting electrons, A Δ 、B Δ and C Δ are each independently greater than 0eV and at least one of A Δ 、B Δ and C Δ is greater than or equal to 0.08eV, or, Where the first surface is for transporting holes, each of a Δ 、B Δ and C Δ is independently less than 0eV, and at least one of a Δ 、B Δ and C Δ is less than or equal to-0.08 eV.
2. An optoelectronic device according to claim 1, wherein the perovskite layer satisfies at least one of three characteristics: (a1) The absolute value of the difference between a Δ and B Δ is less than or equal to 0.03eV; (a2) The absolute value of the difference between C Δ and B Δ is less than or equal to 0.03eV; (a3) The absolute value of the difference between a Δ and C Δ is less than or equal to 0.03eV.
3. The optoelectronic device according to any one of claims 1 or 2, wherein one, two or three of a Δ 、B Δ and C Δ are 0.08ev to 0.35ev in the case where the first surface is used for transporting electrons; Optionally, one, two or three of a Δ 、B Δ and C Δ are 0.14ev to 0.30ev.
4. The optoelectronic device according to any one of claims 1 or 2, wherein one, two or three of a Δ 、B Δ and C Δ are-0.35 eV to-0.08 eV, in the case where the first surface is used to transport holes; Alternatively, one, two, or three of A Δ 、B Δ and C Δ are-0.30 eV to-0.14 eV.
5. The optoelectronic device of any one of claims 1-4, wherein the optoelectronic device satisfies one or more of the following characteristics: (z 1) the band gap of the first perovskite material in the second region is 1.2 eV-2.2 eV, optionally 1.2 eV-2.0 eV; (z 2) the fermi level of the first perovskite material in the second region is from-3.0 eV to-5.5 eV, optionally from-3.7 eV to-5.0 eV, based on the vacuum level.
6. The optoelectronic device according to any one of claims 1 to 5, wherein a region extending from within the perovskite layer from L3 away from the first surface toward the first surface in the Z direction by 5nm to 10nm is denoted as a third region, L3 being equal to or greater than 30nm, the third region being located between the first region and the second region; the difference in fermi level of the first perovskite material in the third region relative to the first perovskite material in the second region is noted as B 32 , Wherein 0.1 eV≤B 32 <0.30eV under the condition that the first surface is used for transporting electrons; or alternatively, the first and second heat exchangers may be, In the case where the first surface is used to transport holes, -0.30eV < B 32 < minus 0.10eV; optionally, L3 is a number selected from 30nm to 100 nm.
7. The optoelectronic device of any one of claims 1 to 6, wherein the perovskite layer has a thickness of 200nm to 1500nm, optionally 400nm to 1000nm.
8. The optoelectronic device of any one of claims 1-7, wherein the perovskite layer further comprises a first additive, the first additive being located in a region of the perovskite layer proximate the first surface; Optionally, the first additive comprises one or more of alkali metal halides, metal oxides, sulfides, metal nitrides, germanates, carbonates; Further alternatively, the alkali metal element in the metal halide comprises one or more of Li, na, K and Cs, the halogen in the metal halide comprises one or more of F, cl, br and I, the metal oxide comprises one or more of Al 2 O 3 、V 2 O 5 、Ta 2 O 5 、SrTiO 3 、Co 3 O 4 、Fe 2 O 3 , the sulfide comprises one or more of MoS 2 、WS 2 、SnS 2 、CS 2 , the metal nitride comprises aluminum nitride, the germanate comprises Zn 2 GeO 4 , and the carbonate comprises Li 2 CO 3 .
9. An optoelectronic device according to any one of claims 1 to 8, wherein the perovskite layer satisfies any one of the following characteristics: (i) The first additive comprises at least one of Cl element and Br element; optionally, the second surface is used for light incidence, and the first surface is used for electron transmission; (ii) The first additive includes at least one of the elements I; optionally, the second surface is used for light incidence, and the first surface is used for hole transport.
10. The optoelectronic device according to any one of claims 1 to 9, wherein the first surface has a potential distribution with a molan index of less than or equal to 0.35, optionally less than or equal to 0.20, wherein the potential of the first surface is obtained by potential testing the first surface with a kelvin atomic force microscope.
11. The optoelectronic device according to any one of claims 1 to 10, wherein the perovskite layer has an area of greater than or equal to 0.09cm 2 , optionally greater than or equal to 1m 2 , on a projection plane perpendicular to the Z direction.
12. An optoelectronic device according to any one of claims 1 to 11, wherein the optoelectronic device comprises a photovoltaic device or a light emitting device.
13. The optoelectronic device of claim 12, wherein the optoelectronic device comprises a photovoltaic device and the second surface is the light-entering side.
14. The photovoltaic device according to claim 12 or 13, wherein the photovoltaic device comprises a photovoltaic device comprising a solar cell comprising the perovskite layer.
15. The photovoltaic device of any of claims 12-14, comprising a solar cell that is a multi-junction solar cell comprising a first cell unit comprising the perovskite layer.
16. The photovoltaic device of claim 15, wherein the multi-junction solar cell further comprises a second cell disposed in a stack with the first cell, wherein the second cell is in communication with the first cell via an interconnect layer or wherein the second cell is separated from the first cell by an insulating layer, wherein the second cell comprises a second light absorbing layer having a different bandgap than the perovskite layer.
17. The optoelectronic device of claim 16, wherein the second light absorbing layer in the second cell comprises a semiconductor active material comprising one or more of a second perovskite material, a silicon-containing semiconductor material, a copper zinc tin sulfide, a copper zinc tin selenide sulfide, a copper indium gallium selenide, a copper indium gallium diselenide, a copper indium selenide, a cadmium telluride, gallium arsenide, and an organic active material.
18. The photovoltaic device according to claim 16 or 17, wherein the multi-junction solar cell comprises a first electrode, the perovskite layer, an interconnect layer, a second light absorbing layer, a second electrode, wherein the interconnect layer is located between the perovskite layer and the second light absorbing layer, wherein the first electrode is located on a side of the perovskite layer facing away from the interconnect layer, and wherein the second electrode is located on a side of the second light absorbing layer facing away from the interconnect layer, The multi-junction solar cell comprises a first electrode, a perovskite layer, a third electrode, an insulating layer, a fourth electrode, a second light absorption layer and a second electrode which are arranged in a stacked mode, wherein the third electrode, the insulating layer and the fourth electrode are arranged between the perovskite layer and the second light absorption layer in a stacked mode, the third electrode is arranged on one side, facing the perovskite layer, of the insulating layer, the fourth electrode is arranged on one side, facing the second light absorption layer, of the insulating layer, the first electrode is located on one side, facing away from the third electrode, of the perovskite layer, and the second electrode is located on one side, facing away from the fourth electrode, of the second light absorption layer.
19. The optoelectronic device of any one of claims 1-18, wherein the optoelectronic device comprises a photovoltaic device, the optoelectronic device satisfying one or more of the following characteristics: (b1) The perovskite layer is contained in a trans-structure or a formal structure of the optoelectronic device; (b2) The optoelectronic device includes a first charge transport layer and a second charge transport layer, the perovskite layer between the first charge transport layer and the second charge transport layer, the first surface facing the first charge transport layer and the second surface facing the second charge transport layer; wherein one of the first charge transport layer and the second charge transport layer is a hole transport layer, the other is an electron transport layer, and the type of charge transported by the first charge transport layer is the same as the type of charge transported by the first surface; (b3) The optoelectronic device comprises a first electrode and a second electrode, the perovskite layer is arranged between the first electrode and the second electrode, the first surface faces the first electrode, and the second surface faces the second electrode; Optionally, the photoelectric device comprises a charge transport layer and a perovskite layer, wherein the charge transport layer is arranged between the first electrode and the second electrode, the charge transport layer comprises at least one of a first charge transport layer arranged between the first electrode and the perovskite layer and a second charge transport layer arranged between the second electrode and the perovskite layer, one of the first charge transport layer and the second charge transport layer is a hole transport layer, the other one is an electron transport layer, and the type of charge transported by the first charge transport layer is the same as the type of charge transported by the first surface.
20. A method of fabricating an optoelectronic device comprising the steps of: Coating a perovskite precursor solution containing a precursor material of a first perovskite material and a first solvent, and drying on a carrier at 0-70 ℃ to remove part of the first solvent, so as to prepare a perovskite intermediate phase film layer; Coating an additive dispersion liquid on the surface of the perovskite intermediate phase film layer, and performing laser annealing to form a perovskite layer, wherein the additive dispersion liquid comprises a first additive and a second solvent, and the first additive is an inorganic material; the perovskite layer comprises a first perovskite material, the perovskite layer comprises a first surface and a second surface which face away from each other in the thickness direction of the perovskite layer, the first surface corresponds to the surface coated by the additive dispersion liquid, the thickness direction of the perovskite layer is marked as Z direction, a first area with the thickness of 5-10 nm exists in a range of 20nm extending from the first surface towards the inner part of the perovskite layer along the Z direction, a second area with the thickness of 5-10 nm exists in a range of 10nm extending from the thickness center of the perovskite layer towards the first surface and the second surface, the first area is positioned between the first surface and the second area, the difference between energy levels of a valence band top of the first perovskite material in the first area relative to the first perovskite material in the second area is marked as A Δ , the energy level difference between the first perovskite material in the first area relative to the first perovskite material in the second area is marked as A Δ , the energy level difference between the energy level of the first perovskite material in the first area relative to the second area is marked as C862 is marked as a difference between the energy level of the perovskite material in the first area (the first area is marked as a first area 8664, the energy level difference between the first area is marked as C-862 in the first area is marked as the first area in the first area At least two of (t 3) a difference of a Δ and B Δ of less than or equal to 0.05eV absolute value (t 2) a difference of C Δ and B Δ of less than or equal to 0.05eV absolute value (t 3) a difference of a band gap of the first perovskite material in the first region relative to the first perovskite material in the second region of less than or equal to 0.02eV absolute value; Where the first surface is for transporting electrons, A Δ 、B Δ and C Δ are each independently greater than 0eV and at least one of A Δ 、B Δ and C Δ is greater than or equal to 0.08eV, or, Where the first surface is for transporting holes, each of a Δ 、B Δ and C Δ is independently less than 0eV, and at least one of a Δ 、B Δ and C Δ is less than or equal to-0.08 eV.

Description

Photoelectric device, preparation method, electricity utilization device and power generation device Technical Field The application relates to the technical field of photoelectric devices, in particular to a photoelectric device, a preparation method, an electric device and a power generation device. Background The photoelectric device is a device capable of performing photoelectric conversion by utilizing a photoelectric conversion mechanism, and can be used for converting light energy into electric energy and applying the electric energy into light energy in the field of photovoltaics, and also can be used for converting the electric energy into the light energy and applying the electric energy into the field of display, illumination and the like. Taking a photovoltaic device as an example, as a high-efficiency device for directly converting solar energy into electric energy, the photovoltaic device has been widely used in various fields, such as a roof-formed distributed photovoltaic power generation system widely used in houses, commercial buildings and industrial facilities, or used as an off-grid power system in combination with energy storage equipment, or integrated in portable electronic equipment to provide power support for outdoor and other scenes. The core functional layer for photoelectric conversion in the photovoltaic device is a light absorption layer. Representative photovoltaic devices include crystalline silicon solar cells, perovskite solar cells, and the like, wherein the light absorbing layer in the perovskite solar cell is a perovskite layer containing perovskite materials. By virtue of high conversion efficiency, allowing low-cost solution process preparation, etc., perovskite solar cells have received wide attention in industry, wherein the photoelectric conversion efficiency is very important for practical application of perovskite solar cells. Therefore, it is important to study how to improve the energy conversion efficiency of the photovoltaic device. Disclosure of Invention According to various embodiments and examples of the present application, the present application provides a photovoltaic device, a method of manufacturing, an electrical device, and a power generation device. The photoelectric device has high energy conversion efficiency. In some embodiments of the first aspect of the present application, there is provided an optoelectronic device comprising a perovskite layer comprising a first perovskite material, the perovskite layer having a first surface and a second surface facing away in a thickness direction of the perovskite layer; A first region with a thickness of 5-10 nm exists in a range extending from the first surface toward the inside of the perovskite layer along the Z direction by 20nm, and a second region with a thickness of 5-10 nm exists in a range extending from the thickness center of the perovskite layer toward the first surface and the second surface by 10nm respectively; the difference between the energy levels of the top of the valence band of the first perovskite material in the first region relative to the first perovskite material in the second region is denoted as a Δ, the difference between the energy levels of the fermi level of the first perovskite material in the first region relative to the first perovskite material in the second region is denoted as B Δ, and the difference between the energy levels of the bottom of the conduction band of the first perovskite material in the first region relative to the first perovskite material in the second region is denoted as C Δ; wherein the perovskite layer satisfies at least two of three characteristics: (t 1) the absolute value of the difference between a Δ and B Δ is less than or equal to 0.05eV; (t 2) the absolute value of the difference between C Δ and B Δ is less than or equal to 0.05eV; (t 3) an absolute value of a band gap difference of the first perovskite material relative to the first perovskite material of the second region within the first region is less than or equal to 0.02eV; Where the first surface is for transporting electrons, A Δ、BΔ and C Δ are each independently greater than 0eV and at least one of A Δ、BΔ and C Δ is greater than or equal to 0.08eV, or, Where the first surface is for transporting holes, each of a Δ、BΔ and C Δ is independently less than 0eV, and at least one of a Δ、BΔ and C Δ is less than or equal to-0.08 eV. The photoelectric device is provided with a perovskite layer with a special interface energy level structure. Under the condition that the first surface is used for transmitting electrons, the perovskite layer comprises a first area positioned near one side surface and a second area positioned at the bulk phase part of the perovskite layer, the energy levels of the conduction band bottom, the fermi energy level and the valence band top of the first perovskite material in the first area are respectively moved upwards relative to the energy levels of the cond