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CN-122028588-A - Photoelectric device, preparation method, electricity utilization device and power generation device

CN122028588ACN 122028588 ACN122028588 ACN 122028588ACN-122028588-A

Abstract

The application relates to a photoelectric device, a preparation method, an electric device and a power generation device. The photoelectric device comprises a perovskite layer, wherein the perovskite layer comprises Pb elements and I elements, the perovskite layer is provided with a first surface and a second surface which are opposite in the thickness direction of the perovskite layer, the perovskite layer comprises a first area which is positioned near the first surface and a second area which is positioned on the bulk phase part of the perovskite layer, the first area is positioned between the first surface and the second area, the binding energy of Pb 2+ f orbit electrons in the first area is marked as J1, the binding energy of Pb 2+ f orbit electrons in the second area is marked as J2, the binding energy of I ‑ d orbit electrons in the first area is marked as J3, and the binding energy of I ‑ d orbit electrons in the second area is marked as J4, wherein the perovskite layer meets the conditions that J1-J2 is more than or equal to 0.15 eV, and J4-J3 is more than or equal to 0.15 eV. The photoelectric device has higher photoelectric conversion efficiency.

Inventors

  • LIN XUESONG
  • XIAO LILI
  • LI CHUNYAN
  • LIN XINYUE
  • LV MINGSHENG
  • PAN CONGRONG
  • LI XUEKE
  • Chang Zhongfu
  • LI WEI

Assignees

  • 宁德时代新能源科技股份有限公司

Dates

Publication Date
20260512
Application Date
20260110

Claims (20)

  1. 1. The photoelectric device is characterized by comprising a perovskite layer, wherein the perovskite layer comprises a first perovskite material, a first perovskite layer and a second perovskite layer, wherein the first perovskite material contains lead elements and iodine elements; a first region with a thickness of 5-10 nm exists in a range extending from the first surface toward the inside of the perovskite layer along the Z direction by 20 nm; the thickness of the perovskite layer is recorded as H 0 , a second region with the thickness of 5-10 nm exists in the range of (1/40). H 0 , which extends from the position of the perovskite layer (1/2). H 0 towards the first surface and the second surface, wherein the first region is positioned between the first surface and the second region; The binding energy of Pb 2+ f orbit electron of the lead element in the first area is marked as J1, the binding energy of Pb 2+ f orbit electron of the lead element in the second area is marked as J2, the binding energy of I - d orbit electron of the iodine element in the first area is marked as J3, and the binding energy of I - d orbit electron of the iodine element in the second area is marked as J4; Wherein the perovskite layer satisfies that J1-J2 is more than or equal to 0.15 eV and J4-J3 is more than or equal to 0.15 eV.
  2. 2. An optoelectronic device according to claim 1, wherein the perovskite layer satisfies one or more of the following characteristics: (t 1) 0.15 eV≤J1-J2≤0.3: 0.3 eV, optionally 0.16≤ 0.16 eV≤J1-J2≤0.28: 0.28 eV, further optionally 0.20 eV≤J1-J2≤0.25: 0.25 eV; (t 2) 0.15 eV≤J4-J3≤0.45: 0.45 eV, optionally 0.20≤ 0.20 eV≤J4-J3≤0.45: 0.45 eV, further optionally 0.35. 0.35 eV≤J4-J3≤0.42: 0.42 eV.
  3. 3. An optoelectronic device according to claim 1 or claim 2, wherein the perovskite layer satisfies one or more of the following characteristics: (z 1) J2 is 138eV to 139 eV; (z 2) J4 is 619eV to 620 eV.
  4. 4. The optoelectronic device of any one of claims 1-3, wherein the first perovskite material further comprises a bromine element, wherein the binding energy of Br - d orbital electrons of the bromine element in the first region is denoted as J5, and the binding energy of Br - d orbital electrons of the bromine element in the second region is denoted as J6, wherein J6-J5>0eV.
  5. 5. The optoelectronic device of any one of claims 1-4, wherein 0.2 eV +.j 6-J5 +.0.5 eV, optionally 0.28 eV +.j 6-J5 +.0.5 eV, further optionally 0.35eV +.j 6-J5 +.0.46 eV.
  6. 6. The optoelectronic device of any one of claims 1 to 5, wherein the perovskite layer has a thickness of 200nm to 1500nm, optionally 400nm to 1000nm.
  7. 7. The optoelectronic device of any one of claims 1-6, wherein the perovskite layer satisfies one or more of the following characteristics in a direction perpendicular to a thickness of the perovskite layer: (a1) The Morgan index of J1-J2 is less than or equal to 0.25, alternatively less than or equal to 0.15; (a2) The Morgan index of J4-J3 is less than or equal to 0.25, alternatively less than or equal to 0.15; (a3) The perovskite layer comprises bromine, the binding energy of Br - d orbit electrons of the bromine in the first region is recorded as J5, and the binding energy of Br - d orbit electrons of the bromine in the second region is recorded as J6, wherein the Morganella index of J6-J5 is less than or equal to 0.25, optionally less than or equal to 0.15.
  8. 8. The optoelectronic device of any one of claims 1 to 7, wherein the first surface has a potential profile with a molan index of less than or equal to 0.2, optionally less than or equal to 0.12, wherein the potential of the first surface is obtained by potential testing the first surface using a kelvin atomic force microscope.
  9. 9. An optoelectronic device according to any one of claims 1 to 8, wherein the perovskite layer has a bandgap of 1.2 eV to 2.2 eV.
  10. 10. The optoelectronic device of any one of claims 1-9, wherein the perovskite layer comprises a first additive located in a region of the perovskite layer proximate to the first surface; Optionally, the first additive comprises at least one of hydrocarbyl amine halide or its corresponding salt, heteroaryl lewis base, polar polymer, polystyrene, and polyethylene glycol, wherein the polar polymer contains polar groups located in side chains, the polar groups comprise one or more of C 1-4 alkyl carboxylate, cyano groups; Further alternatively, the first additive comprises a C 6-20 alkyl halide, the halogen in the alkyl halide or its corresponding salt comprises at least one of chlorine, bromine, and iodine, the heteroaryl lewis base comprises at least one of a pyridine ring and a thiophene ring, and the polar polymer comprises one or more of a C 1-3 alkyl polymethacrylate, a C 1-3 alkyl polyacrylate, and a polyacrylonitrile.
  11. 11. An optoelectronic device according to claim 10, wherein the first additive comprises a hydrocarbyl amine halide or a corresponding salt thereof, the perovskite layer satisfying any one of the following characteristics: (i) The halogen in the alkyl amine halide or the corresponding salt thereof comprises one or more of chlorine element and bromine element; optionally, the second surface is used for light incidence, and the first surface is used for electron transmission; (ii) The halogen in the hydrocarbyl amine halide or its corresponding salt includes iodine element; optionally, the second surface is used for light incidence, and the first surface is used for hole transport.
  12. 12. An optoelectronic device according to claim 10 or claim 11, wherein the first region comprises the first additive.
  13. 13. An optoelectronic device according to any one of claims 1 to 12, wherein the first perovskite material comprises a halogen; The perovskite layer satisfies one or more of the following characteristics: (b1) The molar ratio of iodine element in halogen of the perovskite layer is 10% -100%, and the molar ratio is optionally 80% -100%; (b2) The mole ratio of bromine element in halogen of the perovskite layer is 0% -90%, and optionally 0% -20%; (b3) And (3) recording the molar ratio of the lead element to halogen in the perovskite layer as q to 3, wherein q is 0.5-1, and optionally 0.9-1.
  14. 14. The optoelectronic device of any one of claims 1-13, wherein the perovskite layer has an area of greater than or equal to 0.09cm 2 , optionally greater than or equal to 1m 2 , on a projection plane perpendicular to the Z-direction.
  15. 15. An optoelectronic device according to any one of claims 1 to 14, wherein the optoelectronic device comprises a photovoltaic device or a light emitting device.
  16. 16. The optoelectronic device of any one of claims 1-15, wherein the optoelectronic device comprises a photovoltaic device; the optoelectronic device satisfies one or more of the following characteristics: (c1) The perovskite layer is contained in a trans-structure or a formal structure of the optoelectronic device; (c2) The photoelectric device comprises a first charge transmission layer and a second charge transmission layer, wherein the perovskite layer is arranged between the first charge transmission layer and the second charge transmission layer, the first surface faces the first charge transmission layer, and the second surface faces the second charge transmission layer; (c3) The optoelectronic device comprises a first electrode and a second electrode, the perovskite layer is arranged between the first electrode and the second electrode, the first surface faces the first electrode, and the second surface faces the second electrode.
  17. 17. The optoelectronic device of any one of claims 15-16, wherein the optoelectronic device comprises a photovoltaic device and the second surface is on the light entry side of the perovskite layer.
  18. 18. The photovoltaic device according to any of claims 15-17, wherein the photovoltaic device comprises a photovoltaic device comprising an electron transport layer disposed in a layer stack with the perovskite layer, with the first surface facing the electron transport layer, or In the case where the first surface is used to transport holes, the photovoltaic device includes a hole transport layer disposed in layer-on-layer relation with the perovskite layer, the first surface facing the hole transport layer.
  19. 19. The photovoltaic device according to any one of claims 15 to 17, wherein the photovoltaic device comprises a photovoltaic device comprising a solar cell comprising the perovskite layer.
  20. 20. The photovoltaic device of any of claims 1-19, comprising a solar cell that is a multi-junction solar cell comprising a first cell unit comprising the perovskite layer.

Description

Photoelectric device, preparation method, electricity utilization device and power generation device Technical Field The application relates to the technical field of photoelectric devices, in particular to a photoelectric device, a preparation method, an electric device and a power generation device. Background The photoelectric device is a device capable of performing photoelectric conversion by utilizing a photoelectric conversion mechanism, and can be used for converting light energy into electric energy and applying the electric energy into light energy in the field of photovoltaics, and also can be used for converting the electric energy into the light energy and applying the electric energy into the field of display, illumination and the like. Taking a photovoltaic device as an example, as a high-efficiency device for directly converting solar energy into electric energy, the photovoltaic device has been widely used in various fields, such as a roof-formed distributed photovoltaic power generation system widely used in houses, commercial buildings and industrial facilities, or used as an off-grid power system in combination with energy storage equipment, or integrated in portable electronic equipment to provide power support for outdoor and other scenes. The core functional layer for photoelectric conversion in the photovoltaic device is a light absorption layer. Representative photovoltaic devices include crystalline silicon solar cells, perovskite solar cells, and the like, wherein the light absorbing layer in the perovskite solar cell is a perovskite layer containing perovskite materials. By virtue of high conversion efficiency, allowing low-cost solution process preparation, etc., perovskite solar cells have received wide attention in industry, wherein the photoelectric conversion efficiency is very important for practical application of perovskite solar cells. Therefore, it is important to study how to improve the energy conversion efficiency of the photovoltaic device. Disclosure of Invention According to various embodiments and examples of the present application, the present application provides an optoelectronic device, a method of making, an electrical device, and an electrical power generation device. The photoelectric device has high energy conversion efficiency. In some embodiments of the first aspect of the present application, there is provided an optoelectronic device comprising a perovskite layer comprising a first perovskite material, the first perovskite material containing lead and iodine elements; the thickness direction of the perovskite layer is marked as a Z direction, and the perovskite layer is provided with a first surface and a second surface which are opposite in the Z direction; a first region with a thickness of 5-10 nm exists in a range extending from the first surface toward the inside of the perovskite layer along the Z direction by 20 nm; the thickness of the perovskite layer is recorded as H 0, a second region with the thickness of 5-10 nm exists in the range of (1/40). H 0, which extends from the position of the perovskite layer (1/2). H 0 towards the first surface and the second surface, wherein the first region is positioned between the first surface and the second region; The binding energy of Pb 2+ f orbit electron of the lead element in the first area is marked as J1, the binding energy of Pb 2+ f orbit electron of the lead element in the second area is marked as J2, the binding energy of I - d orbit electron of the iodine element in the first area is marked as J3, and the binding energy of I - d orbit electron of the iodine element in the second area is marked as J4; Wherein the perovskite layer satisfies that J1-J2 is more than or equal to 0.15 eV and J4-J3 is more than or equal to 0.15 eV. The perovskite material (marked as a first perovskite material) in the perovskite layer of the photoelectric device contains lead (Pb) and iodine (I), the perovskite layer comprises a first area positioned near one side surface and a second area positioned at the bulk phase part of the perovskite layer, the combination energy of Pb 2+ f orbital electrons of the lead element in the first area is further controlled to move to a certain amplitude (such as J1-J2 is more than or equal to 0.15 eV) towards a high combination energy direction relative to the second area, meanwhile, the combination energy of I - d orbital electrons of the iodine element in the first area moves to a certain amplitude (such as J4-J3 is more than or equal to 0.15 eV) towards a low combination energy direction relative to the second area, at the moment, the valence state of the lead element corresponding to the first area is relatively closer to +2 valence, the valence state of the iodine element is relatively closer to-1 valence, so that the first area of the perovskite layer forms a relatively stable crystal lattice structure, the distortion of the crystal structure caused by the combination energy