Search

CN-122028589-A - Photoelectric device, preparation method, electricity utilization device and power generation device

CN122028589ACN 122028589 ACN122028589 ACN 122028589ACN-122028589-A

Abstract

The application relates to a photoelectric device, a preparation method, an electric device and a power generation device. The optoelectronic device comprises a perovskite layer, wherein the perovskite layer is provided with a first surface and a second surface which are opposite in the thickness direction, the perovskite layer comprises a first area which is positioned near the first surface and a second area which is positioned on a bulk phase part of the perovskite layer, the first area is positioned between the first surface and the second area, the difference F Δ of fermi energy levels of the first area relative to the second area, the difference (Y V ) of energy levels of valence band tops and the difference (Y C ) of energy levels of conduction band bottoms are respectively and independently larger than 0, and Y V and Y C are respectively and independently smaller than F Δ . The photoelectric device has high energy conversion efficiency.

Inventors

  • LIN XUESONG
  • XIAO LILI
  • LI CHUNYAN
  • LV MINGSHENG
  • LIN XINYUE
  • PAN CONGRONG
  • LI XUEKE
  • Chang Zhongfu
  • LI WEI

Assignees

  • 宁德时代新能源科技股份有限公司

Dates

Publication Date
20260512
Application Date
20260110

Claims (20)

  1. 1. An optoelectronic device comprising a perovskite layer, the perovskite layer comprising a first perovskite material; The thickness direction of the perovskite layer is marked as a Z direction, two outer surfaces of the perovskite layer, which deviate from each other in the Z direction, are respectively marked as a first surface and a second surface, a first area with the thickness of 5-10 nm exists in a range extending from the first surface to the second surface by 20nm, the thickness of the perovskite layer is marked as H 0 , a second area with the thickness of 5-10 nm exists in a range extending from the position (1/2) H 0 of the perovskite layer to the first surface and the second surface by (1/40) H 0 , and the second area is positioned between the first area and the second surface; The difference in energy levels of the first perovskite material in the first region relative to the fermi level of the first perovskite material in the second region is denoted as F Δ , the difference in energy levels of the first perovskite material in the first region relative to the valence band top of the first perovskite material in the second region is denoted as Y V , and the difference in energy levels of the first perovskite material in the first region relative to the conduction band bottom of the first perovskite material in the second region is denoted as Y C ; Wherein, in the case of the first surface for transporting electrons, F Δ 、Y V and Y C are each independently greater than 0 and Y V and Y C are each independently less than F Δ , or, Where the first surface is used to transport holes, F Δ 、Y V and Y C are each independently less than 0, and Y V and Y C are each independently greater than F Δ .
  2. 2. An optoelectronic device according to claim 1, wherein, in the case where the first surface is configured to transport electrons, the difference in energy levels F Δ between the Fermi level of the first perovskite material in the first region and the Fermi level of the first perovskite material in the second region is 0.25eV to 0.45eV, F Δ is optionally 0.30eV to 0.45eV, or, In the case where the first surface is used to transport holes, the difference F Δ in energy level of the first perovskite material in the first region relative to the Fermi level of the first perovskite material in the second region is-0.85 eV to-0.65 eV, optionally-0.85 eV to-0.70 eV.
  3. 3. An optoelectronic device according to any one of claims 1 to 2, wherein the difference in the absolute value of the band gap of the first perovskite material in the first region relative to the first perovskite material in the second region is less than or equal to 0.02eV.
  4. 4. An optoelectronic device according to any one of claims 1 to 3 wherein, in the case where the first surface is configured to transport electrons, the difference Y V between the energy levels of the first perovskite material in the first region and the top of the valence band of the first perovskite material in the second region is 0.10ev to 0.30ev, optionally 0.10ev to 0.20ev, or, In the case where the first surface is used to transport holes, the difference Y V in energy level of the first perovskite material in the first region relative to the valence band top of the first perovskite material in the second region is-0.30 eV to-0.10 eV, optionally-0.20 eV to-0.10 eV.
  5. 5. The optoelectronic device of any one of claims 1-4, wherein the difference in energy level Y C between the conduction band bottom of the first perovskite material in the first region and the conduction band bottom of the first perovskite material in the second region is 0.10 eV-0.30 eV, optionally 0.10 eV-0.20 eV, or, In the case where the first surface is used to transport holes, the difference Y C in energy level of the first perovskite material in the first region relative to the conduction band bottom of the first perovskite material in the second region is-0.30 eV to-0.10 eV, optionally-0.20 eV to-0.10 eV.
  6. 6. An optoelectronic device according to any one of claims 1 to 5, wherein the perovskite layer satisfies one or more of the following characteristics: (t 1) the band gap of the first perovskite material is 1.2 eV-2.2 eV, and optionally 1.2 eV-2.0 eV; (t 2) the fermi level of the first perovskite material in the second region is from-3.0 eV to-5.5 eV, optionally from-3.7 eV to-5.0 eV, based on the vacuum level.
  7. 7. The optoelectronic device of any one of claims 1 to 6, wherein the perovskite layer has a thickness of 200nm to 1500nm, optionally 400nm to 1000nm.
  8. 8. The optoelectronic device of any one of claims 1-7, wherein the perovskite layer comprises a first additive located in a region of the perovskite layer proximate to the first surface, the first additive comprising an organic material; Optionally, the first additive comprises at least one of hydrocarbyl amine halide or its corresponding salt, heteroaryl lewis base, polar polymer, polystyrene, and polyethylene glycol, wherein the polar polymer contains polar groups located in side chains, the polar groups comprise one or more of C 1-4 alkyl carboxylate, cyano groups; Further alternatively, the halogen in the hydrocarbyl amine halide or its corresponding salt includes at least one of chlorine, bromine and iodine, the heteroaryl lewis base contains at least one of pyridine and thiophene rings, and the polar polymer includes one or more of a C 1-3 alkyl polymethacrylate, a C 1-3 alkyl polyacrylate, and polyacrylonitrile.
  9. 9. An optoelectronic device according to claim 8, wherein the first additive comprises a hydrocarbyl amine halide or a corresponding salt thereof, the perovskite layer satisfying any one of the following characteristics: (i) The halogen in the alkyl amine halide or the corresponding salt thereof comprises one or more of chlorine element and bromine element; optionally, the second surface is used for light incidence, and the first surface is used for electron transmission; (ii) The halogen in the hydrocarbyl amine halide or its corresponding salt includes iodine element; optionally, the second surface is used for light incidence, and the first surface is used for hole transport.
  10. 10. An optoelectronic device according to claim 8 or 9, wherein the mole percentage of the first additive relative to the first perovskite material is 1% to 20%, optionally 1% to 10%, the mole amount of the first perovskite material being based on the mole amount of divalent cations in the first perovskite material.
  11. 11. The optoelectronic device according to any one of claims 1 to 10, wherein the first surface has a potential distribution with a molan index of less than or equal to 0.2, optionally less than or equal to 0.15, wherein the potential of the first surface is obtained by potential testing the first surface with a kelvin atomic force microscope.
  12. 12. The optoelectronic device according to any one of claims 1 to 11, wherein the perovskite layer has an area of greater than or equal to 0.09cm 2 , optionally greater than or equal to 1m 2 , on a projection plane perpendicular to the Z direction.
  13. 13. An optoelectronic device according to any one of claims 1 to 12, wherein the optoelectronic device comprises a photovoltaic device or a light emitting device.
  14. 14. The optoelectronic device of claim 13, wherein the optoelectronic device comprises a photovoltaic device and the second surface is on the light entry side of the perovskite layer.
  15. 15. The optoelectronic device according to any one of claims 13 or 14, wherein the optoelectronic device comprises a photovoltaic device comprising an electron transport layer disposed in layer-on-layer with the perovskite layer in case the first surface is for transporting electrons, the first surface facing the electron transport layer, or comprising a hole transport layer disposed in layer-on-layer with the perovskite layer in case the first surface is for transporting holes, the first surface facing the hole transport layer.
  16. 16. The photovoltaic device according to any one of claims 1 to 15, wherein the photovoltaic device comprises a photovoltaic device comprising a solar cell comprising the perovskite layer.
  17. 17. The photovoltaic device of any of claims 1-16, comprising a solar cell that is a multi-junction solar cell comprising a first cell unit comprising the perovskite layer.
  18. 18. The photovoltaic device of claim 17, wherein the multi-junction solar cell further comprises a second cell disposed in a stack with the first cell, wherein the second cell is in communication with the first cell via an interconnect layer or wherein the second cell is separated from the first cell by an insulating layer, wherein the second cell comprises a second light absorbing layer having a different bandgap than the perovskite layer.
  19. 19. The optoelectronic device of claim 18, wherein the second light absorbing layer in the second cell comprises a semiconductor active material comprising one or more of a second perovskite material, a silicon-containing semiconductor material, a copper zinc tin sulfide, a copper zinc tin selenide sulfide, a copper indium gallium selenide, a copper indium gallium diselenide, a copper indium selenide, a cadmium telluride, gallium arsenide, and an organic active material.
  20. 20. The photovoltaic device according to claim 18 or 19, wherein the multi-junction solar cell comprises a first electrode, the perovskite layer, the interconnect layer, a second light absorbing layer, a second electrode, wherein the interconnect layer is located between the perovskite layer and the second light absorbing layer, wherein the first electrode is located on a side of the perovskite layer facing away from the interconnect layer, and wherein the second electrode is located on a side of the second light absorbing layer facing away from the interconnect layer, The multi-junction solar cell comprises a first electrode, a perovskite layer, a third electrode, an insulating layer, a fourth electrode, a second light absorption layer and a second electrode which are arranged in a stacked mode, wherein the third electrode, the insulating layer and the fourth electrode are arranged between the perovskite layer and the second light absorption layer in a stacked mode, the third electrode is arranged on one side, facing the perovskite layer, of the insulating layer, the fourth electrode is arranged on one side, facing the second light absorption layer, of the insulating layer, the first electrode is located on one side, facing away from the third electrode, of the perovskite layer, and the second electrode is located on one side, facing away from the fourth electrode, of the second light absorption layer.

Description

Photoelectric device, preparation method, electricity utilization device and power generation device Technical Field The application relates to the technical field of photoelectric devices, and further relates to a photoelectric device, a preparation method, an electric device and a power generation device. Background The photoelectric device is a device capable of performing photoelectric conversion by utilizing a photoelectric conversion mechanism, and can be used for converting light energy into electric energy and applying the electric energy into light energy in the field of photovoltaics, and also can be used for converting the electric energy into the light energy and applying the electric energy into the field of display, illumination and the like. Taking a photovoltaic device as an example, as a high-efficiency device for directly converting solar energy into electric energy, the photovoltaic device has been widely used in various fields, such as a roof-formed distributed photovoltaic power generation system widely used in houses, commercial buildings and industrial facilities, or used as an off-grid power system in combination with energy storage equipment, or integrated in portable electronic equipment to provide power support for outdoor and other scenes. The core functional layer for photoelectric conversion in the photovoltaic device is a light absorption layer. Representative photovoltaic devices include crystalline silicon solar cells, perovskite solar cells, and the like, wherein the light absorbing layer in the perovskite solar cell is a perovskite layer containing perovskite materials. By virtue of high conversion efficiency, allowing low-cost solution process preparation, etc., perovskite solar cells have received wide attention in industry, wherein the photoelectric conversion efficiency is very important for practical application of perovskite solar cells. Therefore, it is important to study how to improve the energy conversion efficiency of the photovoltaic device. Disclosure of Invention According to various embodiments and examples of the present application, the present application provides an optoelectronic device, a method of manufacturing, an electrical device, and a power generation device. The photoelectric device has high energy conversion efficiency. In other embodiments of the first aspect of the present application, a perovskite layer is included, the perovskite layer including a first perovskite material; The thickness direction of the perovskite layer is marked as a Z direction, two outer surfaces of the perovskite layer, which deviate from each other in the Z direction, are respectively marked as a first surface and a second surface, a first area with the thickness of 5-10 nm exists in a range extending from the first surface to the second surface by 20nm, the thickness of the perovskite layer is marked as H 0, a second area with the thickness of 5-10 nm exists in a range extending from the position (1/2) H 0 of the perovskite layer to the first surface and the second surface by (1/40) H 0, and the second area is positioned between the first area and the second surface; The difference in energy levels of the first perovskite material in the first region relative to the fermi level of the first perovskite material in the second region is denoted as F Δ, the difference in energy levels of the first perovskite material in the first region relative to the valence band top of the first perovskite material in the second region is denoted as Y V, and the difference in energy levels of the first perovskite material in the first region relative to the conduction band bottom of the first perovskite material in the second region is denoted as Y C; Wherein, in the case of the first surface for transporting electrons, F Δ、YV and Y C are each independently greater than 0 and Y V and Y C are each independently less than F Δ, or, Where the first surface is used to transport holes, F Δ、YV and Y C are each independently less than 0, and Y V and Y C are each independently greater than F Δ. The optoelectronic device is provided with a perovskite layer having a specific interface level structure. In the case that the first surface is used for transporting electrons, the perovskite layer comprises a first area located near an electron transport interface (namely near the first surface), and further comprises a second area located near the bulk portion of the perovskite layer, the energy levels of the conduction band bottom (CBM), the fermi level (EF) and the valence band top (VBM) of the first perovskite material in the first area are controlled to be respectively shifted upwards relative to the energy levels of the conduction band bottom, the fermi level and the valence band top of the first perovskite material in the second area, the corresponding Y C、FΔ and Y V are respectively independently larger than 0, further, the energy level upwards shift amplitude of the fermi level of the first p