CN-122028593-A - Solar cell, preparation method thereof, photovoltaic module, power utilization device and power generation device

CN122028593ACN 122028593 ACN122028593 ACN 122028593ACN-122028593-A

Abstract

The application relates to a solar cell, a preparation method thereof, a photovoltaic module, an electric device and a power generation device. The solar cell comprises a first electrode and a perovskite layer which are arranged in a stacked mode, wherein the first electrode comprises fluorine-doped tin oxide, the fluorine-doped tin oxide comprises an FTO crystal phase, the FTO crystal phase comprises an FTO (110) crystal face, the perovskite layer comprises a perovskite crystal phase, the perovskite crystal phase comprises a perovskite dominant crystal face, the first electrode comprises a first surface far away from the perovskite layer, the perovskite layer comprises a second surface far away from the first electrode, the area from the first surface to the second surface in the solar cell is marked as a first structural area, and the peak height ratio of diffraction peaks of the perovskite dominant crystal face to diffraction peaks of the FTO (110) crystal face is marked as M1 and M1 is more than or equal to 5 based on an XRD diffraction pattern of the first structural area. The solar cell has better photoelectric conversion efficiency.

Inventors

LIN ZUCHAO
LIN XIANGLING
SU SHUOJIAN
CHEN CHEN
LIANG JIANGHU
WU TIANLONG
LIU XIAO
ZHAO GUANGUAN

Assignees

宁德时代新能源科技股份有限公司

Dates

Publication Date: 20260512
Application Date: 20260130

Claims (20)

1. The solar cell is characterized by comprising a first electrode and a perovskite layer which are stacked, wherein the first electrode comprises fluorine-doped tin oxide, the fluorine-doped tin oxide comprises an FTO crystal phase, the FTO crystal phase comprises an FTO (110) crystal face, the perovskite layer comprises a perovskite crystal phase, and the perovskite crystal phase comprises a perovskite dominant crystal face; The first electrode comprises a first surface remote from the perovskite layer, the perovskite layer comprises a second surface remote from the first electrode, and the area from the first surface to the second surface in the solar cell is recorded as a first structural area; Based on the XRD diffraction pattern of the first structural region, the peak height ratio of the diffraction peak of the perovskite dominant crystal face to the diffraction peak of the FTO (110) crystal face is recorded as M1, M1 is more than or equal to 5, wherein X rays are injected into the first structural region from the direction from the second surface to the first surface.
2. The solar cell according to claim 1, wherein M1 is 5-15, optionally 5-12.
3. The solar cell according to claim 1 or 2, wherein the perovskite dominant crystal plane is a perovskite (100) crystal plane.
4. The solar cell of claim 3, wherein the perovskite crystalline phase further comprises perovskite (110) crystal planes; Based on the XRD diffraction pattern of the first structural region, the peak height ratio of the diffraction peak of the perovskite (100) crystal face to the diffraction peak of the perovskite (110) crystal face is recorded as M2, wherein M2 is more than or equal to 5, and optionally M2 is more than or equal to 8.
5. The solar cell of claim 4, wherein M2 is 5-28, optionally M2 is 8-28, further optionally 8-25.
6. The solar cell of any one of claims 1-5, wherein the fluorine doped tin oxide further comprises an FTO (200) crystal plane; Based on the XRD diffraction pattern of the first structural region, the peak height ratio of the diffraction peak of the perovskite dominant crystal face to the diffraction peak of the FTO (200) crystal face is recorded as M3, and M3 is more than or equal to 6.
7. The solar cell of any one of claims 1-6, wherein the perovskite crystal phase comprises a perovskite (100) crystal face, and an average thickness of the perovskite (100) crystal face in a normal direction is denoted as D 100 ,D 100 to or more than 600A, optionally, 600A to or more than D 100 to or less than 1000A.
8. The solar cell of any one of claims 1-7, wherein the perovskite crystal phase comprises a perovskite (110) crystal face, and an average thickness of the perovskite (110) crystal face in a normal direction is denoted as D 110 ,D 110 to or more than 200A, optionally, 200A to or more than D 110 to or less than 385A.
9. The solar cell according to any one of claims 1 to 8, wherein a thickness of the perovskite layer is denoted as H, and a region extending from the second surface toward the inside of the perovskite layer in a thickness direction of the perovskite layer by d1 is denoted as a first region, H/10-20 nm≤d1≤h/10+20nm; The first region has an average crystallinity of the perovskite crystalline phase that is less than an average crystallinity of the perovskite crystalline phase of the perovskite layer.
10. The solar cell according to claim 1 to 9, wherein a ratio of a half-width of a diffraction peak of the perovskite dominant crystal face of the first region to a half-width of a diffraction peak of the perovskite dominant crystal face of the perovskite layer is M4, based on an XRD diffraction pattern of the first structural region, M4 being 1 (0.3 to 0.8).
11. The solar cell of claim 10, wherein a half-width of a diffraction peak of the perovskite dominant crystal plane of the perovskite layer is 0.085 ° to 0.131 °.
12. The solar cell of any one of claims 1-11, wherein the perovskite layer comprises a first perovskite material comprising FA 1-x1 Cs x1 PbBr x2 I 3-x2 , wherein x1 is 0-0.8 and x2 is 0-0.8.
13. The solar cell according to any one of claims 1-12, characterized in that one or more of the following characteristics are fulfilled: (1) The thickness of the perovskite layer is 200 nm-1000 nm, and is optionally 300 nm-600 nm; (2) The perovskite layer has an area of greater than or equal to 0.07m 2 on a projection plane perpendicular to a thickness direction of the perovskite layer.
14. The solar cell of any one of claims 1-13, wherein the solar cell is a multi-junction solar cell comprising a first cell unit comprising the first electrode and the perovskite layer.
15. The solar cell of claim 14, further comprising a second cell disposed in a stack with the first cell, wherein the second cell is in communication with the first cell via an interconnect layer or wherein the second cell is separated from the first cell by an insulating layer, wherein the second cell comprises a second light absorbing layer having a different bandgap than the perovskite layer.
16. The solar cell of claim 14 or 15, wherein the second light absorbing layer in the second cell unit comprises a semiconductor active material comprising one or more of a second perovskite material, a silicon-containing semiconductor material, a copper zinc tin sulfide, a copper zinc tin selenide sulfide, a copper indium gallium selenide, a copper indium gallium diselenide, a copper indium selenide, a cadmium telluride, gallium arsenide, an organic active material.
17. The solar cell of any one of claims 14-16, wherein the multi-junction solar cell comprises the first electrode, the perovskite layer, an interconnection layer, the second light absorbing layer and a second electrode which are stacked, wherein the interconnection layer is positioned between the perovskite layer and the second light absorbing layer, the first electrode is positioned on one side of the perovskite layer away from the interconnection layer, and the second electrode is positioned on one side of the second light absorbing layer away from the interconnection layer.
18. The solar cell of any one of claims 14-16, wherein the multi-junction solar cell comprises the first electrode, the perovskite layer, a third electrode, an insulating layer, a fourth electrode, a second light absorbing layer and a second electrode which are stacked, wherein the third electrode, the insulating layer and the fourth electrode are stacked between the perovskite layer and the second light absorbing layer, the third electrode is arranged on the side of the insulating layer facing the perovskite layer, the fourth electrode is arranged on the side of the insulating layer facing the second light absorbing layer, the first electrode is arranged on the side of the perovskite layer facing away from the third electrode, and the second electrode is arranged on the side of the second light absorbing layer facing away from the fourth electrode.
19. The solar cell according to any one of claims 1 to 18, wherein one or more of the following characteristics are satisfied: (1) The perovskite layer is included in a trans-structure or a formal structure of the solar cell; (2) The solar cell further comprises a second transmission layer, wherein the perovskite layer is arranged between the first transmission layer and the second transmission layer in a layer-by-layer mode, one of the first transmission layer and the second transmission layer is a hole transmission layer, and the other of the first transmission layer and the second transmission layer is an electron transmission layer.
20. A method of manufacturing a solar cell, comprising the steps of: Forming a first wet film on a first substrate through a first solution containing a perovskite precursor, and forming a perovskite base film through drying and first annealing treatment, wherein the first substrate comprises a first electrode, and the first electrode comprises fluorine-doped tin oxide; atomizing a second solution containing the first additive, depositing the second solution on the surface of the perovskite base film to form a second wet film, and forming a perovskite layer through second annealing treatment; the first additive comprises at least one of a fluorine-containing organic additive and a sulfur-containing organic additive, the time of the first annealing treatment is 2 min-8 min, and the temperature of the first annealing treatment is 120 ℃ to 150 ℃; The perovskite layer comprises a perovskite crystal phase, the perovskite crystal phase comprises a perovskite dominant crystal face, the first electrode comprises a first surface far away from the perovskite layer, the perovskite layer comprises a second surface far away from the first electrode, a region from the first surface to the second surface in the solar cell is recorded as a first structural region, the peak height ratio of diffraction peaks of the perovskite dominant crystal face to diffraction peaks of the FTO (110) crystal face is recorded as M1, M1 is more than or equal to 5 based on an XRD diffraction pattern of the first structural region, and X rays are emitted into the first structural region from the second surface to the first surface.

Description

Solar cell, preparation method thereof, photovoltaic module, power utilization device and power generation device Technical Field The application relates to the technical field of solar cells, in particular to a solar cell, a preparation method thereof, a photovoltaic module, an electric device and a power generation device. Background The perovskite solar cell is a device for converting solar energy into electric energy by utilizing a photoelectric conversion mechanism of a perovskite crystal material, is a current third-generation solar cell, and has great development potential in the photovoltaic field by virtue of the advantages of high conversion efficiency, high response speed, long service life, low energy consumption, small volume, environmental friendliness and the like. However, the photoelectric conversion efficiency of the perovskite solar cell still needs to be further improved. Disclosure of Invention In view of the above, the present application provides a solar cell having improved photoelectric conversion efficiency, a method of manufacturing the same, and a photovoltaic module, an electric device, and a power generation device. In a first aspect, the application provides a solar cell, which comprises a first electrode and a perovskite layer which are arranged in a stacked manner, wherein the first electrode comprises fluorine-doped tin oxide, the fluorine-doped tin oxide comprises an FTO crystal phase, the FTO crystal phase comprises an FTO (110) crystal face, the perovskite layer comprises a perovskite crystal phase, and the perovskite crystal phase comprises a perovskite dominant crystal face; The first electrode comprises a first surface remote from the perovskite layer, the perovskite layer comprises a second surface remote from the first electrode, and the area from the first surface to the second surface in the solar cell is recorded as a first structural area; Based on the XRD diffraction pattern of the first structural region, the peak height ratio of the diffraction peak of the perovskite dominant crystal face to the diffraction peak of the FTO (110) crystal face is recorded as M1, M1 is more than or equal to 5, wherein X rays are injected into the first structural region from the direction from the second surface to the first surface. The FTO (110) crystal plane is a common crystal plane reference peak in the crystal phase of fluorine doped tin oxide (FTO), which is stable in intensity and can be used to characterize the relative level of the predominant crystal phase content of FTO in the first electrode. By controlling the peak height ratio (M1) of the diffraction peak of the perovskite dominant crystal plane to the diffraction peak of the FTO (110) crystal plane within the above-mentioned range, the perovskite dominant crystal plane can be controlled to have a higher duty ratio in the perovskite layer, at this time, the perovskite layer has higher crystal quality and fewer defects, non-radiative recombination can be reduced, and carrier transport is facilitated, and at the same time, by controlling M1 within the above-mentioned range, the FTO in the first electrode can be controlled to have a lower exposure degree from the projection plane in the direction from the second surface to the first surface in the thickness direction of the perovskite layer, at this time, carrier recombination caused by surface defects due to FTO exposure can be facilitated to be reduced, the service life of carriers can be prolonged, and the effective collection of carriers can be enhanced, thereby improving the photoelectric conversion efficiency on a macroscopic scale. It is to be understood that there is no intention to be bound by the theory presented. For example, by controlling the FTO in the first electrode to have a lower degree of exposure, it is also advantageous to reduce the risk of electrode corrosion and interfacial contact, thereby advantageously improving the performance reliability of the solar cell. In some embodiments, M1 is 5-15, optionally 5-12. At the moment, the perovskite dominant crystal face has higher duty ratio in the perovskite layer, the perovskite layer has high crystal quality and fewer defects, non-radiative recombination can be reduced, carrier transmission is facilitated, and simultaneously, the FTO in the first electrode has lower exposure degree, carrier recombination caused by surface defects due to FTO exposure is facilitated to be reduced, the service life of carriers is prolonged, and the effective collection of carriers is enhanced, so that macroscopic photoelectric conversion efficiency is improved. In some embodiments, the perovskite dominant crystal plane is a perovskite (100) crystal plane. The perovskite (100) crystal face has low defect state density and high carrier life, is beneficial to reducing the defect density and improving the carrier and charge transmission efficiency, and is beneficial to better improving the photoelectric conversion efficien