Search

CN-122028594-A - Solar cell, preparation method thereof, photovoltaic module, power utilization device and power generation device

CN122028594ACN 122028594 ACN122028594 ACN 122028594ACN-122028594-A

Abstract

The application relates to a solar cell, a preparation method thereof, a photovoltaic module, an electric device and a power generation device. The solar cell includes a perovskite layer having a first surface and a second surface disposed opposite to each other in a thickness direction, the second surface being an incident side, a region extending 30nm from the first surface toward an inside of the perovskite layer being referred to as a first region, and a change rate of an average lattice spacing of a perovskite crystal phase of the first region with respect to an average lattice spacing of the perovskite crystal phase of the perovskite layer being less than or equal to 0.95%. The solar cell has better photoelectric conversion efficiency.

Inventors

  • LIN ZUCHAO
  • CHEN CHEN
  • SU SHUOJIAN
  • LIN XIANGLING
  • LIANG JIANGHU
  • WU TIANLONG
  • ZHANG FAN
  • LIANG WEIFENG

Assignees

  • 宁德时代新能源科技股份有限公司

Dates

Publication Date
20260512
Application Date
20260130

Claims (20)

  1. 1. The solar cell is characterized by comprising a perovskite layer, wherein the perovskite layer comprises a perovskite crystal phase, and the perovskite layer is provided with a first surface and a second surface which are oppositely arranged along the thickness direction, wherein the second surface is a light incident side; a region of the perovskite layer extending from the first surface toward the inside of the perovskite layer in the thickness direction of the perovskite layer by 30nm is referred to as a first region; The first region has a rate of change of the average lattice spacing of the perovskite crystalline phase of less than or equal to 0.95% relative to the average lattice spacing of the perovskite crystalline phase of the perovskite layer.
  2. 2. The solar cell of claim 1, wherein the first region has a change rate of 0.1% -0.95%, optionally 0.1% -0.85%, further optionally 0.1% -0.7% of the average lattice spacing of the perovskite crystalline phase relative to the average lattice spacing of the perovskite crystalline phase of the perovskite layer.
  3. 3. The solar cell according to claim 1 or 2, wherein the difference in the average lattice spacing of the perovskite crystalline phase of the first region relative to the average lattice spacing of the perovskite crystalline phase of the perovskite layer is 0.005 a to 0.06 a, optionally 0.02 a to 0.055 a.
  4. 4. The solar cell of any of claims 1-3, wherein the perovskite crystalline phase of the perovskite layer has an average lattice spacing of 6.30 a to 6.50 a.
  5. 5. The solar cell of any one of claims 1-4, wherein a lattice spacing of a perovskite crystal phase of the perovskite layer generally decreases from the first surface to the second surface in a thickness direction of the perovskite layer.
  6. 6. The solar cell according to any one of claims 1 to 5, wherein a thickness of the perovskite layer is denoted as H, and a region extending from the first surface toward an inside of the perovskite layer in a thickness direction by d1 is denoted as a second region, 1/2×h-1/50×h≤d1≤1/2×h+1/50×h; the rate of change of the average lattice spacing of the perovskite crystal phase of the second region relative to the average lattice spacing of the perovskite crystal phase of the perovskite layer is 0.05% -0.65%, optionally 0.05% -0.51%.
  7. 7. The solar cell according to any one of claims 1-6, wherein an average thickness of a dominant crystal plane of a perovskite crystal phase of the first region in a normal direction is denoted as D 1 ,260Å≤D 1 +.450a, optionally 280 a +.d 1 +.450a, based on an XRD diffraction pattern of the first region.
  8. 8. The solar cell according to claim 7, wherein the half-width of the diffraction peak of the dominant crystal plane of the perovskite crystal phase of the first region is denoted as FWHM, and FWHM is 0.15 DEG≤FWHM≤0.31 DEG, optionally, 0.15 DEG≤FWHM≤0.28 °.
  9. 9. The solar cell according to any one of claims 1 to 8, wherein the perovskite crystal phase comprises a dominant crystal plane, the dominant crystal plane being a perovskite (100) crystal plane.
  10. 10. The solar cell of any one of claims 1-9, wherein the perovskite layer comprises a first perovskite material comprising monovalent cations comprising at least one of formamidino groups and Cs + , the mole percent of Cs + being 0-80% based on the amount of total formamidino groups and Cs + .
  11. 11. The solar cell of any one of claims 1-10, wherein the perovskite layer comprises a first perovskite material comprising anions comprising at least one of iodide ions and bromide ions, the mole percent of bromide ions being 0-27% based on the amount of total species of iodide ions and bromide ions.
  12. 12. The solar cell of any one of claims 1-11, wherein the perovskite layer comprises a first perovskite material comprising FA 1-x1 Cs x1 PbBr x2 I 3-x2 , wherein x1 is 0-0.8 and x2 is 0-0.8.
  13. 13. The solar cell of any one of claims 1-12, wherein the perovskite layer comprises organic ammonium cations; Optionally, the organic ammonium cation comprises R-NH 3 + , wherein R comprises at least one of aryl, C1-C10 alkylthio substituted aryl, heteroaryl, piperazinyl, morpholinyl, thiomorpholinyl, C1-C10 alkyl and C1-C10 alkylthio substituted C1-C10 alkyl, and X comprises at least one of halogen and pseudohalogen; optionally, the aryl contains 6-20 ring atoms; optionally, the heteroaryl group contains 5 to 20 ring atoms; optionally, the heteroatom of the heteroaryl group includes at least one of N, O and S.
  14. 14. The solar cell of claim 13, wherein the organic ammonium cation comprises at least one of piperazine-1, 4-diammonium cation, phenethylammonium cation, protonated morpholine-2-carboxylic acid cation, 4- (propylthio) anilinium cation, protonated thiomorpholine-3-carboxylic acid cation, and 3-methylthiopropylammonium cation.
  15. 15. The solar cell according to claim 13 or 14, wherein the mass content of the organic ammonium cations in the perovskite layer is 0.05wt% to 0.3wt% based on the total mass of the perovskite layer.
  16. 16. The solar cell according to any one of claims 1 to 15, wherein the perovskite layer has a thickness of 200nm to 1500nm, optionally 300nm to 600nm.
  17. 17. The solar cell according to any one of claims 1 to 16, wherein an area of the perovskite layer is greater than or equal to 0.07m 2 in a direction perpendicular to a thickness of the perovskite layer.
  18. 18. The solar cell of any one of claims 1-17, wherein the solar cell is a multi-junction solar cell comprising a first cell unit comprising the perovskite layer.
  19. 19. The solar cell of claim 18, further comprising a second cell disposed in a stack with the first cell, wherein the second cell is in communication with the first cell via an interconnect layer or wherein the second cell is separated from the first cell by an insulating layer, wherein the second cell comprises a second light absorbing layer having a different bandgap than the perovskite layer.
  20. 20. The solar cell of claim 18 or 19, wherein the second light absorbing layer in the second cell unit comprises a semiconductor active material comprising one or more of a second perovskite material, a silicon-containing semiconductor material, a copper zinc tin sulfide, a copper zinc tin selenide sulfide, a copper indium gallium selenide, a copper indium gallium diselenide, a copper indium selenide, a cadmium telluride, gallium arsenide, and an organic active material.

Description

Solar cell, preparation method thereof, photovoltaic module, power utilization device and power generation device Technical Field The application relates to the technical field of solar cells, in particular to a solar cell, a preparation method thereof, a photovoltaic module, an electric device and a power generation device. Background The perovskite solar cell (PSCs, perovskite solar cells) is a device for converting solar energy into electric energy by utilizing a photoelectric conversion mechanism of a perovskite crystal material, is a current third-generation solar cell, and has great development potential in the field of new energy by virtue of the advantages of high conversion efficiency, high response speed, long service life, low energy consumption, small volume, environmental friendliness and the like. However, the photoelectric conversion efficiency of the perovskite solar cell still needs to be further improved. Disclosure of Invention In view of the above, the present application provides a solar cell having improved photoelectric conversion efficiency, a method of manufacturing the same, and a photovoltaic module, an electric device, and a power generation device. In a first aspect, the application provides a solar cell, comprising a perovskite layer, wherein the perovskite layer is provided with a first surface and a second surface which are oppositely arranged along the thickness direction, and the second surface is a light incident side; a region of the perovskite layer extending from the first surface toward the inside of the perovskite layer in the thickness direction of the perovskite layer by 30nm is referred to as a first region; The first region has a rate of change of the average lattice spacing of the perovskite crystalline phase of less than or equal to 0.95% relative to the average lattice spacing of the perovskite crystalline phase of the perovskite layer. By controlling the change rate of the average lattice spacing of the perovskite crystal phase of the first region relative to the average lattice spacing of the perovskite crystal phase of the perovskite layer in the above range, the perovskite layer has better uniformity of crystal structure, is beneficial to reducing lattice mismatch and surface defects and reducing surface non-radiative recombination, thereby improving the photoelectric conversion efficiency of the solar cell. In some embodiments, the first region has a rate of change of the average lattice spacing of the perovskite crystalline phase relative to the average lattice spacing of the perovskite crystalline phase of the perovskite layer of 0.1% -0.95%, alternatively 0.1% -0.85%, further alternatively 0.1% -0.7%. By controlling the change rate of the average lattice spacing of the perovskite crystal phase of the first region relative to the average lattice spacing of the perovskite crystal phase of the perovskite layer, on the one hand, the perovskite layer has better uniformity of crystal structure, is favorable for reducing lattice mismatch and surface defects and reducing surface non-radiative recombination, and on the other hand, is favorable for forming beneficial strain near the first region, optimizing energy band alignment, reducing the transmission barrier of carriers, promoting charge extraction, and further improving the photoelectric conversion efficiency of the solar cell. In some embodiments, the difference in the average lattice spacing of the perovskite crystalline phase of the first region relative to the average lattice spacing of the perovskite crystalline phase of the perovskite layer is 0.005 a to 0.06 a, optionally 0.02 a to 0.055 a. By controlling the difference between the average lattice spacing of the perovskite crystal phase of the first region and the average lattice spacing of the perovskite crystal phase of the perovskite layer in the above range, on one hand, the uniformity of the crystal structure of the perovskite layer is better, which is beneficial to reducing lattice mismatch and surface defects and reducing surface non-radiative recombination, and on the other hand, beneficial strain is beneficial to forming near the first region, energy band alignment is optimized, carrier transport potential barrier is reduced, charge extraction is promoted, and thus photoelectric conversion efficiency of the solar cell is better improved. In some embodiments, the perovskite phase of the perovskite layer has an average lattice spacing of 6.30 a to 6.50 a. The average lattice spacing of perovskite crystal phases of the perovskite layer is controlled in the range, on one hand, the crystal structure of the perovskite layer is complete, uniform and relaxed, lattice distortion and stress are reduced, deep energy level defects are reduced, non-radiative recombination is reduced, carrier mobility is improved, and on the other hand, beneficial strain is introduced into a near-surface area, energy band alignment is optimized, a carrier transmission bar