Search

CN-122028595-A - Photovoltaic device, preparation method, electricity utilization device and power generation device

CN122028595ACN 122028595 ACN122028595 ACN 122028595ACN-122028595-A

Abstract

The application relates to a photovoltaic device, a preparation method, an electric device and a power generation device. The photovoltaic device comprises a hole transport layer and a perovskite layer which are arranged in a stacked mode, wherein the perovskite layer comprises a first perovskite material, the hole transport layer comprises nickel oxide, the thickness direction of the perovskite layer is marked as the Z direction, the hole transport layer comprises divalent nickel ions and trivalent nickel ions, the molar ratio of the divalent nickel ions to the trivalent nickel ions is marked as R Ni2+/3+ , R Ni2+/3+ in the hole transport layer is larger than 0 and smaller than 1, and the Morlan index of R Ni2+/3+ in the hole transport layer is lower, such as smaller than or equal to 0.4, on a projection plane perpendicular to the Z direction. The photovoltaic device has improved photoelectric conversion efficiency.

Inventors

  • LIN XUESONG
  • XIAO LILI
  • LV MINGSHENG
  • LIN XINYUE
  • LI CHUNYAN
  • PAN CONGRONG
  • LI XUEKE
  • Chang Zhongfu
  • LI WEI

Assignees

  • 宁德时代新能源科技股份有限公司

Dates

Publication Date
20260512
Application Date
20260130

Claims (20)

  1. 1. A photovoltaic device is characterized by comprising a hole transport layer and a perovskite layer which are stacked, wherein the perovskite layer comprises a first perovskite material, and the hole transport layer comprises nickel oxide; The hole transport layer comprises divalent nickel ions and trivalent nickel ions, wherein the molar ratio of the divalent nickel ions to the trivalent nickel ions is R Ni2+/3+ ; r Ni2+/3+ in the hole transport layer is more than 0 and less than 1; On a projection plane perpendicular to the Z direction, the Morgan index of R Ni2+/3+ in the hole transport layer is less than or equal to 0.4.
  2. 2. The photovoltaic device of claim 1, wherein R Ni2+/3+ in the hole transport layer is 0.5-0.9, optionally 0.6-0.8.
  3. 3. The photovoltaic device according to claim 1 or 2, wherein the molian index of R Ni2+/3+ in the hole transport layer is less than or equal to 0.35 on a plane of projection perpendicular to the Z direction.
  4. 4. The photovoltaic device of any of claims 1-3, wherein the difference between the maximum and minimum thicknesses of the hole transport layer is denoted as Δh, wherein Δh is less than or equal to 5nm and the percentage of Δh to the average thickness of the hole transport layer is less than or equal to 25%; optionally, the percentage of Δh to the average thickness of the hole transport layer is less than or equal to 20%.
  5. 5. The photovoltaic device of any of claims 1-4, wherein the average thickness of the hole transport layer is greater than or equal to 10nm, optionally 10nm to 50nm.
  6. 6. The photovoltaic device of any of claims 1-5, wherein the nickel oxide in the hole transport layer has a coherent structure at the interface with the first perovskite material in the perovskite layer.
  7. 7. The photovoltaic device according to any one of claims 1 to 6, wherein the hole transport layer has a surface B1 facing the perovskite layer, the potential distribution at the surface B1 of the hole transport layer having a molan index of less than or equal to 0.4, optionally less than or equal to 0.35, wherein the potential at the surface B1 is obtained by potential testing the surface B1 of the hole transport layer using a kelvin atomic force microscope.
  8. 8. The photovoltaic device according to any one of claims 1 to 7, wherein the perovskite layer has a first surface facing the hole transport layer and a second surface facing away from the first surface in the Z direction, wherein a first region having a thickness of 5nm to 10nm is present in the perovskite layer in a range extending 30nm from the first surface to the inside of the perovskite layer, the first region being located between the first surface and the second surface; The absolute value of the difference between the fermi level of the first perovskite material and the energy level of the valence band top in the first region is marked as E1, and the absolute value of the difference between the fermi level of the first perovskite material and the energy level of the conduction band bottom in the first region is marked as E2, wherein E1< E2.
  9. 9. The photovoltaic device of claim 8, wherein the difference between E2 and E1 of the first perovskite material in the first region is 1.0ev to 1.5ev, optionally 1.0ev to 1.2ev.
  10. 10. The photovoltaic device according to any one of claims 1 to 9, wherein the perovskite layer has a first surface facing the hole transport layer, wherein the potential distribution at the first surface of the perovskite layer has a molan index of less than or equal to 0.4, optionally less than or equal to 0.35, wherein the potential at the first surface is obtained by potential testing the first surface of the perovskite layer using a kelvin atomic force microscope.
  11. 11. The photovoltaic device according to any of claims 1-10, wherein the perovskite layer has a thickness of 200 nm-1500 nm, optionally 400 nm-1000 nm.
  12. 12. The photovoltaic device according to any one of claims 1 to 11, wherein the perovskite layer has an area of greater than or equal to 0.09cm 2 , optionally greater than or equal to 1m 2 , on a projection plane perpendicular to the Z direction.
  13. 13. The photovoltaic device of any of claims 1-12, wherein the photovoltaic device satisfies one or more of the following characteristics: (c1) The photovoltaic device has a trans-structure or a formal structure; (c2) The photovoltaic device further comprises an electron transport layer, wherein the electron transport layer is arranged on one side of the perovskite layer far away from the hole transport layer; (c3) The photovoltaic device comprises a first electrode and a second electrode, wherein the hole transport layer and the perovskite layer are both arranged between the first electrode and the second electrode, and the hole transport layer is arranged between the perovskite layer and the first electrode.
  14. 14. The photovoltaic device of any of claims 1-13, wherein the hole transport layer is located on the light entry side of the perovskite layer.
  15. 15. The photovoltaic device according to any one of claims 1 to 14, wherein the photovoltaic device comprises a first electrode, the hole transport layer, the perovskite layer, an electron transport layer, and a second electrode that are stacked, the hole transport layer, the perovskite layer, and the electron transport layer are all located between the first electrode and the second electrode, the hole transport layer and the electron transport layer are located on two sides of the perovskite layer, respectively, the hole transport layer is located between the perovskite layer and the first electrode, and the electron transport layer is located between the perovskite layer and the second electrode; The first electrode is an incident side electrode.
  16. 16. The photovoltaic device of any of claims 1-15, comprising a solar cell comprising the hole transport layer and the perovskite layer in a stacked arrangement.
  17. 17. The photovoltaic device of any of claims 1-16, comprising a solar cell that is a multi-junction solar cell comprising a first cell unit comprising the hole transport layer and the perovskite layer in a stacked arrangement.
  18. 18. The photovoltaic device of claim 17, wherein the multi-junction solar cell further comprises a second cell disposed in a stack with the first cell, wherein the second cell is in communication with the first cell via an interconnect layer or wherein the second cell is separated from the first cell by an insulating layer, wherein the second cell comprises a second light absorbing layer having a different bandgap than the perovskite layer.
  19. 19. The photovoltaic device of claim 18, wherein the second light absorbing layer in the second cell comprises a second semiconductor active material comprising one or more of a second perovskite material, a silicon-containing semiconductor material, a copper zinc tin sulfide, a copper zinc tin selenide sulfide, a copper indium gallium selenide, a copper indium gallium diselenide, a copper indium selenide, cadmium telluride, gallium arsenide, and an organic active material.
  20. 20. The photovoltaic device of claim 18 or 19, wherein the multi-junction solar cell comprises a first electrode, the perovskite layer, an interconnect layer, a second light absorbing layer, and a second electrode in a stacked arrangement, wherein the interconnect layer is located between the perovskite layer and the second light absorbing layer, the first electrode is located on a side of the perovskite layer facing away from the interconnect layer, and the second electrode is located on a side of the second light absorbing layer facing away from the interconnect layer, optionally the hole transporting layer is located between the first electrode and the perovskite layer; Or alternatively, the first and second heat exchangers may be, The multi-junction solar cell comprises a first electrode, a perovskite layer, a third electrode, an insulating layer, a fourth electrode, a second light absorption layer and a second electrode which are arranged in a stacked mode, wherein the third electrode, the insulating layer and the fourth electrode are arranged between the perovskite layer and the second light absorption layer in a stacked mode, the third electrode is arranged on one side, facing the perovskite layer, of the insulating layer, the fourth electrode is arranged on one side, facing the second light absorption layer, of the insulating layer, the first electrode is located on one side, facing away from the third electrode, of the perovskite layer, the second electrode is located on one side, facing away from the fourth electrode, of the second light absorption layer, and optionally, the hole transmission layer is located between the first electrode and the perovskite layer.

Description

Photovoltaic device, preparation method, electricity utilization device and power generation device Technical Field The application relates to the technical field of photovoltaics, in particular to a photovoltaic device, a preparation method, an electric device and a power generation device. Background A photovoltaic device is a type of photovoltaic device that converts light energy into electrical energy using a photoelectric conversion mechanism. A typical application of photovoltaic devices is solar cells. With the development of photovoltaic technology, solar cells are increasingly used in distributed photovoltaic power generation systems, off-grid power systems, or in portable electronic devices to provide power support for outdoor and other scenes. The photoelectric conversion efficiency of the photovoltaic device reflects the absorption capacity of the device to incident light, and is one of the core indexes for evaluating the performance of the photovoltaic device. How to improve the photoelectric conversion efficiency of a photovoltaic device is always an important research topic in the photovoltaic technical field. Disclosure of Invention According to various embodiments and examples of the present application, there are provided a photovoltaic device, a method of manufacturing the same, an electric device, and an electric power generation device. The photovoltaic device has improved photoelectric conversion efficiency. In some embodiments of the first aspect of the present application, there is provided a photovoltaic device comprising a hole transporting layer and a perovskite layer disposed in a stack, the perovskite layer comprising a first perovskite material, the hole transporting layer comprising nickel oxide; The hole transport layer comprises divalent nickel ions and trivalent nickel ions, wherein the molar ratio of the divalent nickel ions to the trivalent nickel ions is R Ni2+/3+; r Ni2+/3+ in the hole transport layer is more than 0 and less than 1; On a projection plane perpendicular to the Z direction, the Morgan index of R Ni2+/3+ in the hole transport layer is less than or equal to 0.4. In the photovoltaic device, the hole transport material in the hole transport layer comprises nickel oxide, R Ni2+/3+ in the hole transport layer is controlled to be more than 0 and less than 1, at the moment, the content of trivalent nickel ions (Ni 3+) in the hole transport layer is higher than that of divalent nickel ions (Ni 2+), vacancies with higher concentration can be provided for crystal lattices through the self-doping effect of the trivalent nickel ions, the hole transport capacity of the hole transport layer is improved, furthermore, the Morlan index of R Ni2+/3+ on a projection plane perpendicular to the Z direction is lower, namely the doping concentration of the trivalent nickel ions in the hole transport layer has better in-plane uniformity, the uniformity of doping of the trivalent nickel ions is higher, the continuity of a hole transport path is high, the built-in electric field distribution is more uniform, the hole transport is facilitated, in addition, the uniform doping of the trivalent nickel ions enables the work function and HOMO energy level of nickel oxide to be more stable, a more stable alignment relationship with the valence band top of perovskite is formed, the efficient extraction of the holes is facilitated, and the photovoltaic device can be remarkably improved through the multiple effects. It is to be understood that there is no intention to be bound by the theory presented. In some embodiments of the present application, R Ni2+/3+ in the hole transport layer is 0.5 to 0.9, optionally 0.6 to 0.8. By controlling R Ni2+/3+ in the hole transport layer within the range, the hole transport capacity of the hole transport layer can be improved through the self-doping effect of trivalent nickel ions within the whole range of the hole transport layer, the probability of oxidation-reduction reaction of the trivalent nickel ions with perovskite can be well controlled, good perovskite intrinsic stability is achieved, and good device stability can be achieved while the photoelectric conversion efficiency of the device is improved. In some embodiments of the application, the mole index of R Ni2+/3+ in the hole transport layer is less than or equal to 0.35 on a plane of projection perpendicular to the Z direction. At this time, the doping concentration of trivalent nickel ions in the hole transport layer has better in-plane uniformity, is favorable for realizing continuity of a hole transport path, is favorable for better improving hole transport capacity, and in addition, the uniformly distributed trivalent nickel ions can reduce the overhigh concentration of local trivalent nickel ions and reduce the probability of reaction between trivalent nickel ions and the first perovskite material, so that the photoelectric conversion efficiency of the photovoltaic device is better improve