CN-122028596-A - All-optical control synaptic device and its modulation method and preparation method

CN122028596ACN 122028596 ACN122028596 ACN 122028596ACN-122028596-A

Abstract

The invention discloses a full light-operated synaptic device and a modulation method and a preparation method thereof, and relates to the field of semiconductors, wherein the full light-operated synaptic device comprises a basal layer, an active layer and an electrode layer which are sequentially arranged from bottom to top, the electrode layer comprises a source electrode and a drain electrode which are arranged on the active layer at intervals, an organic photosensitive layer is arranged on the active layer between the source electrode and the drain electrode, the material of the active layer is indium gallium zinc oxide, and the material of the organic photosensitive layer is PDVT-10. The all-optical control synaptic device can realize the all-optical reversible conductivity regulation and control function under the light stimulation of different light intensities of single-wavelength light or the light stimulation of dual-wavelength combined light.

Inventors

JIANG SHANSHAN
WANG KECHENG
HE GANG
GUO XIAOHUI
ZHAO YUNONG
ZHANG HAINAN
CHENG SHUO
REN YI

Assignees

安徽大学

Dates

Publication Date: 20260512
Application Date: 20260126

Claims (9)

1. The full light-operated synaptic device is characterized by comprising a basal layer, an active layer and an electrode layer which are sequentially arranged from bottom to top, wherein the electrode layer comprises a source electrode and a drain electrode which are arranged on the active layer at intervals, and an organic photosensitive layer is arranged on the active layer between the source electrode and the drain electrode, wherein the material of the active layer is indium gallium zinc oxide, and the material of the organic photosensitive layer is PDVT-10; The all-optical control synaptic device is used for realizing the cyclical reversible change of synaptic weight presentation enhancement and inhibition by changing the light intensity of the optical stimulus when the optical stimulus with a single wavelength in a preset range is applied or alternatively applying the optical stimulus in a preset dual-wavelength combination.
2. A full light control synapse device in accordance with claim 1 wherein the substrate has a thickness of 0.4-0.6 mm a thickness of 22-78 a nm a thickness of the active layer, a thickness of 60-80 a nm a thickness of the electrode layer, and a thickness of 40-59 a nm a thickness of the organic photoactive layer.
3. A full light control synapse device in accordance with claim 2 wherein the substrate has a thickness of 0.52 mm, the active layer has a thickness of 53 nm, the electrode layer has a thickness of 60 nm, and the organic photoactive layer has a thickness of 49 nm.
4. A method for modulating an all-optical control synaptic device according to any one of claims 1-3, wherein a single wavelength optical stimulus having a wavelength in a predetermined range is applied to the all-optical control synaptic device in a pulse form, and the synaptic weight of the all-optical control synaptic device is reversibly changed by changing the intensity of the optical stimulus.
5. The method of claim 4, wherein the full-optical control synaptic device exhibits a synaptic weight enhancement effect when the optical power density of the optical stimulus is greater than a predetermined optical power density under a single wavelength of the optical stimulus, the photoconductivity of the full-optical control synaptic device is enhanced and the higher the optical power density, the greater the photoconductivity value; When the optical power density of the optical stimulus is smaller than or equal to the preset optical power density, the full-optical-control synaptic device shows a synaptic weight suppression effect, photoconduction is reduced, when the optical power density is higher, the synaptic weight suppression effect is weaker, and when the optical power density is increased to the preset optical power density, the synaptic weight suppression effect is converted into a synaptic weight enhancement effect.
6. The method of claim 4, wherein the predetermined range is 400-480 nm; Preferably, the preset range is 420-440 nm; Preferably, the preset range is 429-431 nm.
7. A method for modulating an all-optical control synaptic device according to any one of claims 1-3, wherein optical stimuli in a preset dual wavelength combination are alternately applied to the all-optical control synaptic device in pulse form, so that the synaptic weight of the all-optical control synaptic device is reversibly changed in a cycle of enhancement and suppression.
8. The method of claim 7, wherein the predetermined dual wavelength combination is a 340 nm and 625 nm combination, a 340 nm and 530 nm combination, a 430 nm and 530 nm combination, or a 430 nm and 625 nm combination.
9. A method of making an all-optical synaptic device comprising: Pretreating a substrate; Forming an active layer on the pretreated substrate, wherein the active layer is made of indium gallium zinc oxide; Forming an electrode layer on the active layer, wherein the electrode layer includes a source electrode and a drain electrode disposed on the active layer at intervals; forming an organic photosensitive layer on the active layer between the source electrode and the drain electrode, wherein the material of the organic photosensitive layer is PDVT-10; The all-optical control synapse device is used for realizing the cyclical reversible change of the enhancement and the inhibition of the synapse weight when the light stimulus with a single wavelength with a preset wavelength range is applied and the light intensity of the light stimulus is changed or when the light stimulus in a preset double-wavelength combination is alternately applied.

Description

All-optical control synaptic device and its modulation method and preparation method Technical Field The invention relates to the technical field of all-optical control synaptic devices, in particular to an all-optical control synaptic device and a modulation method and a preparation method thereof. Background Machine vision is a class of data-intensive technology, and the need for hardware capable of processing visual information with high parallelism, high integration, energy efficiency, and high stability is continually upgraded. Neuromorphic photonic devices, and in particular electro-optical synaptic devices, use light as an information carrier and modulating signals, providing unique advantages for visual information processing. However, in most reported electro-optic synaptic devices, a critical limitation still exists in that reversible synaptic weight updating (enhancement and suppression) is typically dependent on mixed electro-optic signals. The necessity of such dual mode signals not only complicates system architecture and integration, but also introduces the inherent disadvantages of instability and high power consumption, as electrical signals can cause parasitic effects, cross talk, and irreversible damage to the device microstructure over time. In the biological vision system, the retina plays a central role in detecting light signals and effectively converting them into nerve impulses. It includes photoreceptors (cone cells and rod cells), horizontal cells, bipolar cells, non-dendritic cells, and ganglion cells. Wherein bipolar cells in the retina exhibit opposite responses to light stimuli, wherein different "ON" and "OFF" pathways are activated. The bidirectional opposite signal processing mechanism not only realizes high-efficiency contrast coding, but also lays a structural and functional foundation for subsequent visual information integration. The inherent ability to achieve bi-directional plasticity using pure optical cues provides a strong sense of dexterity for designing more efficient and biomimetic artificial vision synapses. Research has been devoted to driving the development of fully optically controlled synaptic devices. For example, csPbBr 3 -based devices can operate in a self-powered mode, and CsPbBr 3/solvent/carbon nitride multilayer structures show promise for full light modulation. In addition, recent studies have demonstrated that perovskite/ZnO-based heterojunction devices are capable of producing excitation and suppression responses under ultraviolet light (365 nm) and green light (525 nm), respectively. Nevertheless, many reported "all-optical" devices still require an auxiliary electric field to achieve functional control. In addition, most of the existing all-optical devices rely on two beams of light with different wavelengths to modulate signals, and only the light intensity is used as a control parameter to realize single-wavelength signal modulation has been rarely studied. Furthermore, in most existing reports, there is a phenomenon that lacks stability of reversible conductance under pure optical programming, which is precisely the key metric for reliable neuromorphic computation. Disclosure of Invention In order to solve the technical problems in the background technology, the invention provides an all-optical control synaptic device and a modulation method and a preparation method thereof. In a first aspect, the full light-operated synaptic device comprises a substrate layer, an active layer and an electrode layer which are sequentially arranged from bottom to top, wherein the electrode layer comprises a source electrode and a drain electrode which are arranged on the active layer at intervals, an organic photosensitive layer is arranged on the active layer between the source electrode and the drain electrode, the active layer is made of indium gallium zinc oxide, and the organic photosensitive layer is made of PDVT-10. Preferably, the all-optical synaptic device is configured to effect a cyclically reversible change in synaptic weight presentation enhancement and suppression by varying the intensity of a light stimulus when the light stimulus is applied at a single wavelength in a predetermined range of wavelengths, or alternatively by applying light stimuli in a predetermined combination of wavelengths. Preferably, the thickness of the substrate is 0.4-0.6 mm, the thickness of the active layer is 22-78 nm, the thickness of the electrode layer is 60-80 nm, and the thickness of the organic photosensitive layer is 40-59 nm; preferably, the substrate has a thickness of 0.52 mm, the active layer has a thickness of 53 nm, the electrode layer has a thickness of 60 nm, and the organic photosensitive layer has a thickness of 49 nm. In a second aspect, the present invention further provides a method for modulating an all-optical control synaptic device, which is applied to the all-optical control synaptic device according to any one of the first aspects, and inc