CN-122028597-A - Photovoltaic cell, electricity utilization device and power generation device

Abstract

The application provides a photovoltaic cell, an electricity consumption device and a power generation device. The photovoltaic cell comprises a cell assembly and at least one layer of anti-ultraviolet layer arranged on the light incident side of the cell assembly, wherein each layer of anti-ultraviolet layer comprises at least three layers of sub-anti-ultraviolet films which are arranged in a laminated mode, and the refractive index of the plurality of layers of sub-anti-ultraviolet films is gradually reduced in the direction of incident light. In the photovoltaic cell, the anti-ultraviolet layer can form the light reflection increasing effect, the reflectivity of the anti-ultraviolet layer to ultraviolet light is increased, ultraviolet light can be effectively reduced or even prevented from entering the interior of the cell assembly, the ultraviolet resistance of the photovoltaic cell is improved, the technical problems that materials in the cell assembly are decomposed by ultraviolet light, defects are caused by ultraviolet light and the like are solved, and finally the technical effect of prolonging the service life of the cell is achieved.

Inventors

• CHEN CHANGSONG
• YAN LIN
• YAN YUBO
• YANG XUANTONG
• MA JUNFU
• LIU XIAO
• Request for anonymity
• ZHU CHEN

Assignees

• 宁德时代新能源科技股份有限公司

Dates

Publication Date

20260512

Application Date

20241113

Claims (13)

1. 1. The photovoltaic cell is characterized by comprising a cell assembly and at least one anti-ultraviolet layer arranged on the light incident side of the cell assembly, wherein each anti-ultraviolet layer comprises at least three layers of sub-anti-ultraviolet layers which are arranged in a laminated mode, and the refractive indexes of the multiple layers of sub-anti-ultraviolet layers are gradually reduced in the direction of incident light.
2. 2. The photovoltaic cell of claim 1, wherein the subanti-uv film has a band gap of ≡3.0eV or more.
3. 3. The photovoltaic cell of claim 1 or 2, wherein the subuv film is an inorganic semiconductor material.
4. 4. The photovoltaic cell of claim 1, wherein the material of the sub-uv-reflective film comprises one or more of an oxide, carbide, nitride, and sulfide, wherein, The oxide comprises one or more of hafnium oxide, aluminum oxide, silicon oxide, titanium oxide, zirconium oxide, nickel oxide, zinc oxide, chromium oxide, gallium oxide, niobium oxide, magnesium oxide, copper oxide and cuprous oxide; The carbide comprises one or more of silicon carbide, boron carbide, tungsten carbide and tantalum carbide; the nitride comprises one or more of carbon nitride, boron nitride, silicon nitride, phosphorus nitride, titanium nitride, manganese nitride, tungsten nitride and zirconium nitride; the sulfide comprises one or two of zinc sulfide and manganese sulfide.
5. 5. The photovoltaic cell of any one of claims 1 to 4, wherein the anti-uv layer comprises three sub-anti-uv layers stacked together, and in the incident light direction, refractive indexes of the three sub-anti-uv layers in the same anti-uv layer are n1, n2 and n3 in order, and a difference between n2 2 and n1 x n3 is 0 to 5.
6. 6. The photovoltaic cell of claim 5, it is characterized in that the method comprises the steps of, n2 2 =n 1 n3.
7. 7. The photovoltaic cell of any of claims 1-6, wherein the subanti-uv film has a thickness of 1-200 nm.
8. 8. The photovoltaic cell of claim 7, wherein the subanti-uv film has a thickness of 3-70 nm.
9. 9. The photovoltaic cell of any of claims 1-8, comprising 1-10 layers of the anti-uv layer in a stacked arrangement.
10. 10. The photovoltaic cell of claim 9, wherein different ones of the anti-uv layers comprise the same number of layers of the sub-anti-uv film.
11. 11. The photovoltaic cell of any of claims 1-10, wherein the photovoltaic cell is a perovskite solar cell.
12. 12. An electrical device comprising the photovoltaic cell of any one of claims 1-11.
13. 13. A power generation device comprising the photovoltaic cell of any one of claims 1-11.

Description

Photovoltaic cell, electricity utilization device and power generation device Technical Field The application relates to the technical field of batteries, in particular to a photovoltaic cell, an electric device and a power generation device. Background In the use process of the photovoltaic cell, such as a perovskite cell, ultraviolet light in sunlight can be incident into the cell, and the ultraviolet light can promote the decomposition of perovskite materials, so that a perovskite layer is damaged, and the service life of the photovoltaic cell is seriously influenced. In addition, ultraviolet light may also cause structural defects in the perovskite material that may further affect the photoelectric conversion efficiency of the photovoltaic cell. In the prior art, an ultraviolet light absorption film layer is usually arranged in a perovskite solar cell, but still has a larger proportion of ultraviolet light transmission, which affects the service life of the cell. Disclosure of Invention In view of the technical problems in the background art, the application provides a photovoltaic solar cell, which aims to improve the negative influence of ultraviolet light on a photovoltaic cell. In order to achieve the above object, according to a first aspect of the present application, there is provided a photovoltaic cell comprising a cell module and at least one anti-ultraviolet layer disposed on a light incident side of the cell module, each of the anti-ultraviolet layers comprising at least three sub-anti-ultraviolet layers disposed in a stacked manner, wherein refractive indexes of the sub-anti-ultraviolet layers in a direction of incident light are gradually reduced. In the photovoltaic cell, the refractive index of the multi-layer sub-anti-ultraviolet film is gradually reduced in the incident light direction, so that the light reflection increasing effect can be formed, most of ultraviolet light can be reflected in the multi-layer sub-anti-ultraviolet film required, and the anti-ultraviolet capability of the photovoltaic cell is improved. If the single-layer or double-layer structure of the anti-ultraviolet layer (namely, the anti-ultraviolet layer only comprises one or two layers of sub-anti-ultraviolet films), a larger proportion of ultraviolet light can penetrate through the anti-ultraviolet layer, namely, the single-layer or double-layer sub-anti-ultraviolet films are insufficient for reflecting most of ultraviolet light, while in the multi-layer laminated structure of the sub-anti-ultraviolet film, the ultraviolet light penetrated in the upper sub-anti-ultraviolet film can be gradually reflected in the lower sub-anti-ultraviolet film, so that the technical problems that the ultraviolet light is incident into the battery assembly can be effectively reduced or even prevented, the battery material is decomposed by the ultraviolet light, defects caused by the ultraviolet light and the like are solved, and the technical effect of prolonging the service life of the battery is finally realized. In the case of a photovoltaic cell comprising multiple anti-uv layers, i.e. comprising multiple periodically cycled anti-uv layers of decreasing refractive index, the reflectivity to uv light may be further enhanced. In some embodiments of the application, the band gap of the subanti-UV film is ≡3.0eV. Therefore, the anti-ultraviolet layer has higher visible light transmittance, and the photoelectric conversion efficiency of the battery is further improved. In some embodiments of the application, the sub-uv-reflective film is an inorganic semiconductor material. Therefore, the sub-anti-ultraviolet film has better weather resistance and good thickness controllability in the preparation process. In some embodiments of the present application, the material of the sub-uv-resistant film comprises one or more of oxides, carbides, nitrides and sulfides, wherein the oxides comprise one or more of hafnium oxide, aluminum oxide, silicon oxide, titanium oxide, zirconium oxide, nickel oxide, zinc oxide, chromium oxide, gallium oxide, niobium oxide, magnesium oxide, copper oxide and cuprous oxide, the carbides comprise one or more of silicon carbide, boron carbide, tungsten carbide and tantalum carbide, the nitrides comprise one or more of carbon nitride, boron nitride, silicon nitride, phosphorus nitride, titanium nitride, manganese nitride, tungsten nitride and zirconium nitride, and the sulfides comprise one or two of zinc sulfide and manganese sulfide. Therefore, the material has better weather resistance of the sub-ultraviolet-reflecting film, good thickness controllability in the preparation process and better visible light transmittance. In some embodiments of the present application, the anti-ultraviolet layer includes three sub-anti-ultraviolet layers stacked, and in the incident light direction, refractive indexes of the three sub-anti-ultraviolet layers are n1, n2, and n3 in sequence, and a difference between the n2 2 and