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CN-122028598-A - Wide band gap perovskite film based on composite self-assembly interface layer regulation and control and application thereof

CN122028598ACN 122028598 ACN122028598 ACN 122028598ACN-122028598-A

Abstract

The invention discloses a wide band gap perovskite film based on regulation and control of a composite self-assembly interface layer and application thereof, which belong to the technical field of photovoltaic cells, wherein the composite self-assembly interface layer is obtained by depositing a mixed solution containing SAM molecules and p-hydroxy cinnamic acid on a transparent conductive layer and annealing the mixed solution, can reduce non-radiative recombination related to interface defects, improve energy level matching and carrier selective transmission, inhibit halogen segregation and interface degradation of the wide band gap perovskite under optical/thermal stress, and improve device efficiency and wet thermal stability.

Inventors

  • XUE JINGJING
  • WANG RUI
  • TIAN YUAN
  • DONG NA
  • ZHANG ZHONGWEI
  • XU JINGCHAO
  • WANG JUAN
  • XU YIQING

Assignees

  • 东方电气长三角(杭州)创新研究院有限公司
  • 浙江大学

Dates

Publication Date
20260512
Application Date
20251231

Claims (10)

  1. 1. The composite self-assembly interface layer of the perovskite solar cell is characterized in that the composite self-assembly interface layer is obtained by depositing a mixed solution containing SAM molecules and p-hydroxy cinnamic acid on a transparent conductive layer and annealing; in the mixed solution containing SAM molecules and p-hydroxy cinnamic acid, the doping mole ratio of the p-hydroxy cinnamic acid relative to the SAM molecules is 0.01 mol-20 mol%; the SAM molecules are conjugated small organic molecules containing a phosphate anchor group.
  2. 2. The composite self-assembled interface layer according to claim 1, wherein the SAM molecules are 0.1-1.0 mg/mL in the mixed solution of SAM molecules and p-hydroxycinnamic acid, wherein the solvent is an alcoholic solvent, and the SAM molecules are (2- (pyrene-1-yl) ethyl) phosphoric acid Py3, (4- (3, 6-dimethyl-9H-carbazole-9-yl) butyl) phosphoric acid Me-4PACz or [2- (9H-carbazole-9-yl) ethyl ] phosphoric acid 2PACz.
  3. 3. The composite self-assembled interfacial layer of claim 1 wherein the annealing temperature is 60-140 ℃ and the annealing time is 3-30 min.
  4. 4. The wide-bandgap perovskite film based on composite self-assembly interface layer regulation and control is characterized by comprising a transparent conductive layer, the composite self-assembly interface layer and a perovskite layer which are sequentially arranged from bottom to top.
  5. 5. The wide bandgap perovskite thin film according to claim 4, wherein the transparent conductive layer has a thickness of 80-200 nm a, the composite self-assembled interfacial layer has a thickness of 6-10 nm a and the perovskite layer has a thickness of 300-1200 a nm a.
  6. 6. The method for preparing a wide bandgap perovskite thin film according to claim 4, comprising the steps of: (1) Providing a transparent conductive substrate, and cleaning and surface activating the transparent conductive substrate to obtain a transparent conductive layer; (2) Preparing a mixed solution containing SAM molecules and p-hydroxy cinnamic acid, depositing the mixed solution on the transparent conductive layer, and annealing to form a composite self-assembled interface layer; (3) And depositing perovskite precursor solution on the composite self-assembled interface layer and forming a film to form a perovskite layer, thus obtaining the wide-bandgap perovskite film with the band gap of 1.60-1.85 eV.
  7. 7. The method of claim 6, wherein the transparent conductive substrate comprises ITO, FTO, or AZO, and the surface activation treatment is ultraviolet ozone treatment or plasma treatment.
  8. 8. The method according to claim 6, wherein the perovskite precursor solution is a metal halide perovskite ABX 3 solution, wherein in the metal halide perovskite ABX 3 , the a-site cation comprises at least one of FA + 、Cs + 、Rb + 、MA + , the B-site cation comprises Pb 2+ and/or Sn 2+ , the X-site anion comprises at least one of I - 、Br - 、Cl - , and the concentration of the metal halide perovskite ABX 3 solution is 1.0-1.8 mmol/mL.
  9. 9. The use of the wide bandgap perovskite thin film according to claim 4 in the manufacture of optoelectronic devices.
  10. 10. The use according to claim 9, wherein the optoelectronic device is a metal halide perovskite solar cell; The metal halide perovskite solar cell comprises the wide band gap perovskite thin film, an electron transport layer and an electrode which are sequentially arranged from bottom to top; Or the metal halide perovskite solar cell comprises the wide band gap perovskite film, a passivation layer, an electron transport layer and an electrode which are arranged from bottom to top in sequence.

Description

Wide band gap perovskite film based on composite self-assembly interface layer regulation and control and application thereof Technical Field The invention relates to the technical field of photovoltaic cells, in particular to a wide band gap perovskite film based on composite self-assembly interface layer regulation and control and application thereof. Background In recent years, single junction perovskite solar cells have evolved rapidly, and their device efficiency has gradually approached the theoretical limit, resulting in a multiplication of the challenges of subsequent developments. The crystalline silicon/perovskite stacked solar cell is considered to be one of the most promising high-efficiency routes for industrialization because of the capability of significantly reducing thermal relaxation loss. The performance and stability of the wide bandgap perovskite solar cell as a top cell in a stacked structure directly determine the overall efficiency and reliability of the crystalline silicon/perovskite stacked device. Therefore, it is important to produce efficient, stable wide bandgap top cells. However, wide bandgap perovskite devices generally have significant interface transmission loss and voltage loss, which has become one of the key bottlenecks to further improve the efficiency of the crystalline silicon/perovskite stack. Therefore, an effective strategy capable of minimizing the interface loss of the wide-bandgap perovskite top cell is provided, and the method has important significance for realizing a high-efficiency and long-term operation crystalline silicon/perovskite laminated device. The crystalline silicon/perovskite laminated top cell is generally composed of a perovskite light absorption layer, a charge transmission layer, an electrode and other multi-layer films, multiple heterogeneous interfaces are inevitably introduced into the multi-layer stack, and the physicochemical properties of the interfaces directly influence the separation, transmission and collection processes of carriers, which are core factors for determining the performance of the device. Self-assembled monolayers (Self-Assembled Monolayers, SAMs) are widely used as Hole-selective layers (Hole-SELECTIVE LAYER, HSL) for their unique advantages. The high optical transmittance (> 95%) can reduce the loss of incident light to the greatest extent, and the tunability of the molecular energy level can realize the energy level matching with the perovskite active layer and the electrode, so that the carrier extraction efficiency is optimized. In addition, the molecular-level thickness (less than 3 nm) of the SAMs can inhibit interface non-radiative recombination, and the surface functional group modification capability of the SAMs can also regulate perovskite crystallization kinetics, so that the quality of the thin film is improved. However, single SAM systems suffer from significant limitations such as incomplete coverage of the monolayer on the roughened substrate resulting in localized charge transport blockage, weak interfacial bonding of the SAM to the metal oxide substrate (e.g., ITO) or perovskite layer, susceptibility to mechanical/chemical destabilization, insufficient thermodynamic stability of conventional SAMs (e.g., meO-2 PACz), and susceptibility to molecular desorption during long-term operation. By introducing functional molecules to regulate the arrangement of self-assembled monolayers (SAMs) and the interface potential distribution at the perovskite bottom interface, the interface recombination can be effectively reduced and the device efficiency can be improved. The invention discloses a preparation method of a perovskite solar cell based on a self-assembled monolayer modified by small molecules, which utilizes a self-assembled monolayer material and 1, 4-benzenediphosphonic acid to prepare the self-assembled monolayer modified by small molecules, wherein the 1, 4-benzenediphosphonic acid is anchored on the surface of a substrate through a phosphate group at one end of the self-assembled monolayer material, gaps among SAM molecules are filled, a uniformly covered film is formed, and the phosphate group at the other end of the 1, 4-benzenediphosphonic acid is exposed on the surface of the modification layer. The chinese patent publication No. CN120614938a discloses a SAM layer modified with a benzene ring compound, the SAM layer modified with a benzene ring compound includes a self-assembled molecule and an aggregation inhibitor, the aggregation inhibitor is dispersed in the self-assembled molecule, the aggregation inhibitor includes a benzene ring and at least one X group connected to the benzene ring, and the X group is any one of a fluoro group, a nitrile group and a nitro group. The SAM layer modified by the benzene ring compound can solve the problem that the carrier loss of an interface between a perovskite film and a hole transport layer is easily caused by higher self-aggregation property and poorer