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CN-122028599-A - Double-molecular interface modified wide-bandgap perovskite solar cell and preparation method thereof

CN122028599ACN 122028599 ACN122028599 ACN 122028599ACN-122028599-A

Abstract

The invention discloses a double-molecular interface modified wide-bandgap perovskite solar cell and a preparation method thereof, and belongs to the field of photovoltaics. The wide band gap perovskite solar cell comprises an anode substrate, a hole transmission layer, a perovskite photoactive layer, an interface modification layer, an electron transmission layer, a cathode buffer layer and a cathode which are sequentially stacked from bottom to top, wherein the interface modification layer is a double-molecule interface modification layer formed by mixing 1, 3-propylenediamine diiodine and cyclohexyldimethyl ammonium diiodine. The bimolecular interface modification layer provided by the invention can realize the accurate modulation of the surface energy level of the wide-band-gap perovskite on the premise of ensuring the effective passivation of the surface defect of the perovskite, obviously improves the photovoltaic performance and stability of the wide-band-gap perovskite device, has the energy conversion efficiency as high as 23.83 percent, has simple preparation process, and can be used for further improving the performance of the wide-band-gap perovskite device and realizing the industrialized mass production of the wide-band-gap perovskite device.

Inventors

  • WANG RUI
  • XUE JINGJING
  • JIANG XIAOFEN
  • XIAO QINGYUN

Assignees

  • 西湖大学
  • 浙江大学

Dates

Publication Date
20260512
Application Date
20260126

Claims (10)

  1. 1. The double-molecular interface modified wide-bandgap perovskite solar cell comprises an anode substrate, a hole transmission layer, a perovskite photoactive layer, an interface modification layer, an electron transmission layer, a cathode buffer layer and a cathode which are sequentially stacked, and is characterized in that the interface modification layer is a double-molecular interface modification layer formed by mixing 1, 3-propanediamine diiodine and cyclohexyldimethyl ammonium diiodine.
  2. 2. The bi-molecular interface modified wide bandgap perovskite solar cell according to claim 1, wherein the mass ratio of 1, 3-propanediamine diiodide to cyclohexyldimethyl ammonium diiodide is 100-1:10 when mixed.
  3. 3. The double molecular interface modified wide bandgap perovskite solar cell according to claim 1, wherein said cyclohexyldimethyl ammonium diiodo is at least one of 1, 2-cyclohexyldimethyl ammonium diiodo, 1, 3-cyclohexyldimethyl ammonium diiodo, 1, 4-cyclohexyldimethyl ammonium diiodo.
  4. 4. The double-molecular interface modified wide-bandgap perovskite solar cell according to claim 1, wherein the thickness of the hole transport layer is 20-30 nm, the thickness of the perovskite photoactive layer is 550-650-nm, the thickness of the interface modification layer is 5-10 nm, the thickness of the electron transport layer is 20-50 nm, the thickness of the cathode buffer layer is 3-8 nm, and the thickness of the cathode is 100-150 nm.
  5. 5. The method for preparing a double molecular interface modified wide bandgap perovskite solar cell according to any one of claims 1 to 4, comprising the steps of: (1) Selecting and cleaning an anode substrate, and cooling for standby after being processed by a plasma machine; (2) Spin-coating a hole transport layer material on the processed anode substrate and annealing to obtain a hole transport layer; (3) Preparing a perovskite precursor solution, spin-coating the perovskite precursor solution on the hole transport layer prepared in the step (2), and annealing to obtain a perovskite photoactive layer; (4) Dissolving 1, 3-propylene diamine diiodine and cyclohexyldimethyl ammonium diiodine in an organic solvent, mixing, dripping the mixture on the perovskite photoactive layer prepared in the step (3), and annealing to obtain an interface modification layer; (5) And (3) sequentially depositing an electron transport layer, a cathode buffer layer and a cathode on the interface modification layer prepared in the step (4) by a vacuum thermal evaporation method.
  6. 6. The method for fabricating a bi-molecular interface modified wide bandgap perovskite solar cell according to claim 5, wherein in step (2), the step of spin-coating a hole transport layer material and annealing comprises spin-coating a nickel oxide solution on the treated anode substrate and annealing, and then spin-coating a 2-pyrenyl-ethyl phosphoric acid solution and annealing; the spin-coating nickel oxide solution has the speed of 2500-3500 rpm, the spin-coating time of 25-35 s, the annealing temperature of 110-130 ℃, the annealing time of 15-25 min, and the thickness of the annealed nickel oxide is 15-20 nm; The speed of spin coating 2-pyrenyl-ethyl phosphoric acid solution is 3000-4000 rpm, the spin coating time is 30-40 s, the annealing temperature is 100-110 ℃, the annealing time is 15-25 min, and the thickness of 2-pyrenyl-ethyl phosphoric acid is 5-10 nm.
  7. 7. The method for preparing the double-molecular interface modified wide-bandgap perovskite solar cell according to claim 6, wherein the nickel oxide solution is obtained by ultrasonic 10-20 min of nano-dissolving nickel oxide in deionized water, and the concentration of the solution is 5-15 mg/mL; The 2-pyrenyl-ethyl phosphoric acid solution is obtained by dissolving 2-pyrenyl-ethyl phosphoric acid in a mixed solvent of methanol and N, N-dimethylformamide, and the concentration of the 2-pyrenyl-ethyl phosphoric acid solution is 0.5-0.7 mg/mL.
  8. 8. The method for producing a double molecular interface modified wide bandgap perovskite solar cell according to claim 5, wherein in step (3), a perovskite precursor solution is spin-coated with 4500-5500 rpm a 45-55 s, 200-250 μl of chlorobenzene is added dropwise as an antisolvent when the spin-coating process remains 28-22 s, and the perovskite photoactive layer is obtained by annealing at an annealing temperature of 105-115 ℃ after spin-coating for 20-30 min.
  9. 9. The method for preparing the double-molecular interface modified wide-bandgap perovskite solar cell according to claim 8, wherein a precursor solution of a perovskite photoactive layer comprises a component A, a component B and an additive, wherein the component A is one or more of lead iodide, lead bromide and lead chloride, the component B is one or more of cesium iodide, cesium chloride and formamidine iodine, and the additive is formamidine chloride; The solvent for preparing the precursor solution of the perovskite photoactive layer is a mixed solvent of N, N-dimethylformamide and dimethyl sulfoxide, and the precursor solution and the mixed solvent are mixed according to the volume ratio of 4:1.
  10. 10. The method of claim 5, wherein the annealing temperature of the deposited interface modification layer in step (4) is 105-115 ℃ and the annealing time is 8-12 min.

Description

Double-molecular interface modified wide-bandgap perovskite solar cell and preparation method thereof Technical Field The invention belongs to the field of perovskite batteries, and particularly relates to a double-molecular interface modified wide-bandgap perovskite solar cell and a preparation method thereof. Background Perovskite solar cells have become the army of the next generation of photovoltaic technology by virtue of their excellent photoelectric properties, such as high absorption coefficient, long carrier diffusion length, and adjustable band gap as the composition changes. Among them, a wide bandgap (1.65-1.70 eV) perovskite electric solar cell is receiving attention because it can be stacked with a commercial silicon cell to widen a spectral range, reduce hot carrier relaxation, and thereby achieve higher energy conversion efficiency. However, the inherent soft lattice of perovskite results in its low defect formation energy, inducing severe non-radiative recombination at the wide bandgap perovskite surface. Surface passivation has become an important strategy to inhibit interfacial non-radiative recombination. For example, the invention patent with publication number of CN119136575A discloses a perovskite solar cell based on 1,2PDADI interface modification and a preparation method thereof, the device structure of the cell sequentially comprises ITO conductive glass, a SnO 2 electron transmission layer, a 1,2PDADI modification layer, a perovskite light absorption layer, a hole transmission layer and an Ag counter electrode from bottom to top, and the preparation method specifically comprises the following steps of (1) cleaning and drying the ITO conductive glass, (2) spin-coating SnO 2 nano dispersion liquid, annealing treatment, (3) spin-coating 1,2PDADI/IPA solution, annealing treatment, (4) spin-coating perovskite precursor solution, annealing treatment, (5) spin-coating SpiroOMeTAD precursor solution, oxidizing treatment and (6) vacuum evaporation Ag counter electrode to obtain the perovskite solar cell with 1,2PDADI interface modification. For another example, the invention patent with publication number of CN117615592A discloses an interface modified perovskite solar cell based on an iodine tri-compound, and a preparation method and application thereof, wherein the structure of the cell sequentially comprises a conductive glass substrate, an electron transport layer, a perovskite photoactive layer, an interface defect passivation layer, a hole transport layer and a metal electrode layer from bottom to top, the interface defect passivation layer is made of the iodine tri-compound, the preparation method of the iodine tri-compound comprises the following steps of (1) preparing an iodine tri-negative ion solution through disproportionation reaction of an elemental I2 in an isopropanol solution, wherein the concentration of the isopropanol solution of the elemental I 2 is 0.3 mol/L, step (2) heating the iodine tri-negative ion solution prepared in the step (1) in a sealed environment for 7 days at 80 ℃, then cooling to obtain a solution containing iodine tri-negative ions, step (3) adding a ligand into the solution containing the iodine tri-negative ions obtained in the step (2), and fully stirring to obtain the iodine tri-compound solution, wherein the ratio of the ligand to the iodine I 2 is the interface defect layer with the interface of nm. However, these methods only can passivate the defects of the perovskite film, and the effect of passivation molecules is relatively single, so that the surface energy level of the perovskite can be changed, which is an insufficiently appreciated but critical limiting factor. Such changes may result in unfavorable energy level arrangements due to additional carrier extraction barriers, affecting device carrier dynamics. In addition, the band changes caused by these surface treatments may activate halogen ion migration, accelerating the degradation of the device under operating conditions. Therefore, how to develop a strategy for realizing energy level regulation by using a high-efficiency passivating agent so as to realize the most effective defect passivation and energy level accurate regulation, thereby further improving the photovoltaic performance of the perovskite with wide band gap is a technical problem to be solved at present. Disclosure of Invention Aiming at the problems existing in the prior art, the invention provides a double-molecular interface modified wide-bandgap perovskite solar cell and a preparation method thereof, which are used for realizing effective defect passivation and energy level accurate regulation and control and improving the photovoltaic performance of the wide-bandgap perovskite. A double-molecular interface modified wide-bandgap perovskite solar cell comprises an anode substrate, a hole transmission layer, a perovskite photoactive layer, an interface modification layer, an electron transmission layer, a cathode buffe