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CN-122028600-A - Trans perovskite solar cell with fluorine-containing salt interface modification layer and preparation method thereof

CN122028600ACN 122028600 ACN122028600 ACN 122028600ACN-122028600-A

Abstract

The invention discloses a trans-perovskite solar cell with a fluorine-containing salt interface modification layer and a preparation method thereof, and belongs to the technical field of perovskite photovoltaic devices. The trans-perovskite solar cell comprises a transparent conductive substrate, a hole transport layer, a perovskite light absorption layer, an interface modification layer, an electron transport layer and a metal electrode from bottom to top. Wherein the interface modification layer is formed by depositing 1-fluoropyridine trifluoro methane sulfonate or 2-fluoro-alpha-methyl-4-biphenylacetic acid or trifluoro methane sulfonic acid 2, 2-difluoroethyl ester by a solution method and polymerizing in situ. The modification layer has the functions of molecular passivation and polymer network stabilization, and provides an efficient electron extraction channel. The invention realizes the long-acting stabilization of interface passivation and the high-efficiency smoothness of charge transmission through the fluorine-containing material, remarkably reduces the non-radiative recombination loss, and synchronously improves the photoelectric conversion efficiency, the filling factor and the long-term operation stability of the trans-perovskite solar cell.

Inventors

  • ZHAO WENYAN
  • YOU SHIQI
  • TIAN CHUANJIN

Assignees

  • 景德镇陶瓷大学

Dates

Publication Date
20260512
Application Date
20260213

Claims (10)

  1. 1. A trans-perovskite solar cell with a fluorine-containing salt interface modification layer, characterized in that the trans-perovskite solar cell comprises a transparent conductive substrate, a hole transport layer, an interface modification layer, a perovskite light absorption layer, an electron transport layer, a buffer layer and a metal electrode; The interface modification layer is formed by depositing an interface modification material through a solution method and polymerizing in situ, the interface modification layer can be positioned between a hole transmission layer and a perovskite light absorption layer or between a perovskite light absorption layer and an electron transmission layer or between the hole transmission layer and the perovskite light absorption layer and between the perovskite light absorption layer and the electron transmission layer, and the interface modification material is 1-fluoropyridine trifluoro methane sulfonate or 2-fluoro-alpha-methyl-4-biphenylacetic acid or trifluoro methane sulfonate 2, 2-difluoroethyl ester.
  2. 2. The trans-perovskite solar cell of claim 1, wherein the transparent conductive substrate is conductive glass, the hole transport layer is a nickel oxide/self-assembled molecule combined hole transport layer, the self-assembled molecule is [4- (3, 6-dimethyl-9H-carbazol-9-yl) butyl ] phosphonic acid, the perovskite light absorbing layer is an all-inorganic perovskite or an organic-inorganic metal halide perovskite, the electron transport layer is at least one of PCBM and C 60 , the buffer layer is BCP, and the metal electrode is a gold electrode, a silver electrode, or a copper electrode.
  3. 3. The trans-perovskite solar cell according to claim 2, wherein the conductive glass is indium tin oxide or fluorine doped tin dioxide.
  4. 4. A method of preparing a trans perovskite solar cell according to any one of claims 1 to 3, wherein the method of preparation is any one of the following: (A1) The interface modification layer is positioned between the hole transmission layer and the perovskite light absorption layer, and a transparent conductive substrate, the hole transmission layer, the interface modification layer, the perovskite light absorption layer, the electron transmission layer, the buffer layer and the metal electrode are sequentially overlapped from bottom to top; (A2) The interface modification layer is positioned between the perovskite light absorption layer and the electron transport layer, and a transparent conductive substrate, a hole transport layer, the perovskite light absorption layer, the interface modification layer, the electron transport layer, a buffer layer and a metal electrode are sequentially overlapped from bottom to top; (A3) The interface modification layer is positioned between the hole transmission layer and the perovskite light absorption layer and between the perovskite light absorption layer and the electron transmission layer, and a transparent conductive substrate, the hole transmission layer, the lower interface modification layer, the perovskite light absorption layer, the upper interface modification layer, the electron transmission layer, the buffer layer and the metal electrode are sequentially overlapped from bottom to top.
  5. 5. The method for preparing the metal oxide film is characterized in that the specific steps of (A1) are that nickel oxide solution is paved on a transparent conductive substrate, spin-coating is conducted for 20-40s, then heating and annealing are conducted for 5-20min at 90-150 ℃ to obtain a nickel oxide film, then self-assembled molecular layer solution is paved on the nickel oxide film, spin-coating is conducted for 20-40s in an inert gas environment, then heating and annealing are conducted for 5-20min at 80-130 ℃, so as to obtain an air hole transmission layer, interface modification materials are dissolved in isopropanol solution and configured into solution, then are paved on the air hole transmission layer, spin-coating is conducted for 10-40s, then heating and annealing are conducted for 5-20min at 50-120 ℃ to obtain an interface modification layer, then a perovskite precursor solution is paved on the interface modification layer, then rotating for 5-20s at a speed of 500-2000rpm, then rotating for 20-60s at a speed of 3000-7000rpm, then heating and annealing are conducted for 5-120min at 70-180 ℃ to obtain a perovskite film, then spin-coating is conducted for 10-40s at a speed of 5-40 ℃ or evaporating and evaporating for preparing metal powder at a speed of 5-40 nm at a speed of 50-40 ℃ or at a speed of 5-150 ℃ at a temperature of 5-40 ℃ at which the electronic transmission layer is prepared by evaporating for 10-40nm, and evaporating the metal film at a speed of 1-50-40 ℃ or at a speed of 1-50 nm.
  6. 6. The preparation method of the A-type metal film according to claim 4, wherein the specific steps of (A2) are that a nickel oxide solution is paved on a transparent conductive substrate, the nickel oxide film is prepared by spin-coating for 20-40s, then heating and annealing at 90-150 ℃ for 5-20min, then a self-assembled molecular layer solution is paved on the nickel oxide film, spin-coating for 20-40s in an inert gas environment, then heating and annealing at 80-130 ℃ for 5-20min to prepare an empty cavity transmission layer, then a perovskite precursor solution is paved on the empty cavity transmission layer, firstly, the perovskite precursor solution is spun for 5-20s at a speed of 500-2000rpm, then spun for 20-60s at a speed of 3000-7000rpm, the interface modification material is prepared into an interface modification layer solution by dissolving in isopropanol solution, then paving the interface modification layer solution on the nickel oxide film, then heating and annealing at 50-120 ℃ for 5-20min, then heating and annealing at 50-120 ℃ for 5-5 min, then preparing an interface modification layer at a temperature of 500-2000rpm, then evaporating at a speed of 5-20 nm or at a speed of 5-150 ℃ to prepare an electronic powder by spin-40 nm, or evaporating at a speed of 1-40 nm, and evaporating at a speed of 1-40 to prepare an electronic powder, and finally, the metal film is prepared by spin-evaporating at a speed of 1-40 nm, and evaporating at a speed of 1-40 nm, at a speed of 1-50-20 nm, or a speed of the electronic transmission layer is prepared.
  7. 7. The method of preparing the metal oxide film according to claim 4, wherein the specific steps of (A3) are that a nickel oxide solution is spread on a transparent conductive substrate, spin-coated for 20-40s, then heat annealed for 5-20min at 90-150 ℃, then a self-assembled molecular layer solution is spread on the nickel oxide film, spin-coated for 20-40s in an inert gas environment, then heat annealed for 5-20min at 80-130 ℃ to prepare an air hole transport layer, an interface modification material is dissolved in an isopropanol solution to prepare an interface modification layer solution, then spread on the air hole transport layer, coated for 10-40s, then heat annealed for 5-20min at 50-120 ℃ to prepare an upper interface modification layer, then spread on the upper interface modification layer with a perovskite precursor solution, then rotated for 5-20s at a speed of 500-2000rpm, then rotated for 20-60s at a speed of 3000-7000rpm, then heat annealed for 5-120min at 70-180 ℃ after film formation, then the perovskite film is prepared for 10-40s at a speed of 5-20min, then heat annealed for 10-40s at a speed of 50-20 m, then heat annealed for 10-20 min at a speed of 5-20m, then heat annealed for preparing an electronic powder at a temperature of 5-40 m/20 m at a temperature of 1-40 ℃ or lower interface modification layer at a temperature of 20-20 m, spin-coating at rotation speed for 10-40s or evaporating BCP powder at 150-300 deg.C and evaporation rate of 0.1-1A/s for 5-15nm to obtain buffer layer, and evaporating metal electrode on the buffer layer.
  8. 8. The method according to any one of claims 5 to 7, wherein the transparent conductive substrate is subjected to pretreatment, specifically comprising the steps of sequentially placing a transparent conductive substrate material in ultrapure water, acetone and alcohol, performing ultrasonic treatment, drying, and then performing ozone treatment.
  9. 9. The method according to any one of claims 5 to 7, wherein the perovskite precursor liquid is prepared by dissolving CdCl 2 、MACl、MAI、CsI、PbCl 2 、FAI、PbI 2 in a mixed solvent of N, N-dimethylformamide and dimethyl sulfoxide.
  10. 10. The preparation method according to claim 9, wherein the mass ratio of CdCl 2 、MACl、MAI、CsI、PbCl 2 , FAI and PbI 2 is 0.1-1:2-10:10-15:15-30:18-30:200-300:600-800, and the volume ratio of N, N-dimethylformamide and dimethyl sulfoxide is 2-10:1.

Description

Trans perovskite solar cell with fluorine-containing salt interface modification layer and preparation method thereof Technical Field The invention relates to the technical field of perovskite photovoltaic devices, in particular to a trans-perovskite solar cell with a fluorine-containing salt interface modification layer and a preparation method thereof. Background Along with the rising of perovskite photovoltaics, organic-inorganic hybrid perovskite solar cells realize a leap of photoelectric conversion efficiency in short decades due to the excellent photoelectric characteristics, such as high absorption coefficient, long carrier diffusion length and flexibly adjustable optical band gap, and the authentication efficiency of single-junction devices breaks through 27 percent, thereby showing great potential exceeding that of the traditional crystalline silicon technology. However, its large-scale commercialization process is still limited by the key bottlenecks of complicated preparation process, dependence on expensive components (such as Spiro-ome) and insufficient long-term environmental stability. At the same time, crystalline silicon solar cell efficiency, which is the dominant market, is approaching its theoretical limit of about 29.4%. In this context, high efficiency perovskite/silicon stacked cell architectures have attracted attention because they can break through single junction efficiency limits. To adapt to the lamination requirement and overcome the stability and cost barrier of perovskite itself, developing a perovskite subcell structure with high stability, low cost and excellent photoelectric properties has become a serious issue in current research. Among the numerous perovskite solar cell structures, planar trans-perovskite solar cell structures are considered ideal choices for achieving efficient perovskite/silicon tandem cells due to their simple fabrication process, low cost, weak hysteresis effects, and relatively excellent long-term stability. After more than ten years of development, the steady-state authentication efficiency of the trans-p-i-n PSCs is broken through by 27%. Despite such many advantages, the core problems restricting further breakthrough of performance and practicality are increasingly highlighted, namely, the bulk defects of the perovskite light absorbing layer and the non-radiative recombination losses of the perovskite/charge transport layer interface. These problems severely limit the open circuit voltage and fill factor of the device and affect long term stability. Disclosure of Invention In order to solve the defects in the prior art, the invention aims to provide a trans-perovskite solar cell with a fluorine-containing salt interface modification layer and a preparation method thereof, so as to realize passivation of interface defects, improve carrier transmission efficiency, improve performance and improve efficiency and device stability of the perovskite solar cell. The technical scheme for solving the technical problems is that the trans-perovskite solar cell with the fluorine-containing salt interface modification layer comprises a transparent conductive substrate, a hole transmission layer, an interface modification layer, a perovskite light absorption layer, an electron transmission layer, a buffer layer and a metal electrode; the interface modification layer is formed by depositing an interface modification material through a solution method and polymerizing the interface modification material in situ, the interface modification layer can be positioned between a hole transmission layer and a perovskite light absorption layer or between a perovskite light absorption layer and an electron transmission layer or between the hole transmission layer and the perovskite light absorption layer and between the perovskite light absorption layer and the electron transmission layer, and the interface modification material is 1-fluoropyridine trifluoro methane sulfonate or 2-fluoro-alpha-methyl-4-biphenylacetic acid or trifluoro methane sulfonic acid 2, 2-difluoroethyl ester. Further, the transparent conductive substrate is conductive glass, the hole transport layer is nickel oxide/self-assembled molecule combined hole transport layer, the self-assembled molecule is [4- (3, 6-dimethyl-9H-carbazole-9-yl) butyl ] phosphonic acid, the perovskite light absorption layer is all-inorganic perovskite or organic-inorganic metal halide perovskite, the electron transport layer is at least one of PCBM and C 60, the buffer layer is BCP, and the metal electrode is a gold electrode, a silver electrode or a copper electrode. Further, the conductive glass is indium tin oxide or fluorine doped tin dioxide. The invention provides a preparation method of the trans-perovskite solar cell, which comprises the following steps: (A1) The interface modification layer is positioned between the hole transmission layer and the perovskite light absorption layer, and a transparent conductive subs