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CN-122028605-A - Light-emitting device, preparation method thereof and display device

CN122028605ACN 122028605 ACN122028605 ACN 122028605ACN-122028605-A

Abstract

The application discloses a light-emitting device, a preparation method thereof and a display device, and relates to the technical field of display. The light-emitting device comprises a first electrode, a first carrier functional layer, a light-emitting layer and a second electrode which are arranged in a stacked mode, wherein the material of the first carrier functional layer comprises first inorganic nano particles and a first shell layer coating the first inorganic nano particles, and the material of the first shell layer comprises a first insulating polymer. The light-emitting device provided by the application has higher stability.

Inventors

  • LIU MINGSHU

Assignees

  • 广东聚华新型显示研究院

Dates

Publication Date
20260512
Application Date
20241112

Claims (16)

  1. 1. A light emitting device comprising a first electrode, a first carrier functional layer, a light emitting layer, and a second electrode, wherein the first electrode, the first carrier functional layer, and the light emitting layer are stacked, wherein the material of the first carrier functional layer comprises first inorganic nanoparticles and a first shell layer coating the first inorganic nanoparticles, and the material of the first shell layer comprises a first insulating polymer.
  2. 2.A light-emitting device according to claim 1, wherein, The mass ratio of the first inorganic nano particles to the first insulating polymer is (50-70): 30-50, optionally the mass ratio of the first inorganic nano particles to the first insulating polymer is (55-65): 35-45, and/or The first inorganic nanoparticle is linked to the first insulating polymer by a chemical bond, the chemical bond comprising a covalent bond, and/or The first shell layer has an average thickness of 1nm to 5nm, optionally 1nm to 3nm, and/or The first insulating polymer comprises one or more of polyester, polyacid, polyamine, polyolefin, and polyol.
  3. 3. A light-emitting device according to claim 2, wherein, The polyester comprises one or more of polymethacrylate polymer and polyurethane, wherein the polymethacrylate polymer comprises one or more of polymethyl methacrylate, polyethylene glycol methacrylate and polyhydroxyethyl methacrylate, and/or The polyacid comprises a polyacid-based polymer comprising polymethacrylic acid, and/or The polyamine comprises a polyimide-based polymer comprising one or more of a polyimide, a poly (amide-imide), and/or The polyolefin comprises one or more of a polyolefin polymer, a polyaromatic polymer, wherein the polyolefin polymer comprises polyethylene, the polyaromatic polymer comprises polystyrene, and/or The polyalcohol comprises a polyalkene polymer, and the polyalkene polymer comprises polyethylene glycol.
  4. 4. The light-emitting device according to claim 1, further comprising a second carrier functional layer between the light-emitting layer and the second electrode, wherein a material of the second carrier functional layer comprises a second inorganic nanoparticle and a second shell layer coating the second inorganic nanoparticle, and wherein a material of the second shell layer comprises a second insulating polymer.
  5. 5. A light-emitting device according to claim 4, wherein, The mass ratio of the second inorganic nano-particles to the second insulating polymer is (50-70): 30-50, optionally the mass ratio of the second inorganic nano-particles to the second insulating polymer is (55-65): 35-45, and/or The second inorganic nanoparticle is linked to the second insulating polymer by a chemical bond comprising a covalent bond, and/or The second shell layer has an average thickness of 1nm to 5nm, optionally 1nm to 3nm, and/or The second insulating polymer comprises one or more of polyester, polyacid, polyamine, polyolefin and polyalcohol, optionally the polyester comprises one or more of polymethacrylate polymer and polyurethane, wherein the polymethacrylate polymer comprises one or more of polymethyl methacrylate, polyethylene glycol methacrylate and polyhydroxyethyl methacrylate, optionally the polyacid comprises a polyacid polymer, the polyacid polymer comprises polymethacrylic acid, optionally the polyamine comprises a polyimide polymer, the polyimide polymer comprises one or more of polyimide and poly (amide-imide), optionally the polyolefin comprises one or more of a polyalkylene polymer and a polyaromatic olefin polymer, wherein the polyalkylene polymer comprises polyethylene, the polyaromatic olefin polymer comprises polystyrene, optionally the polyalcohol comprises a polyalkenol polymer, and the polyalkenol polymer comprises polyethylene glycol.
  6. 6. A light-emitting device according to claim 4, wherein, The first inorganic nano-particles are first N-type inorganic nano-particles or first P-type inorganic nano-particles, and/or The second inorganic nano-particles are second P-type inorganic nano-particles or second N-type inorganic nano-particles, and/or The first inorganic nanoparticles have an average particle diameter of 3nm to 20nm, optionally 3nm to 10nm, and/or The average particle size of the second inorganic nano particles is 3 nm-20 nm, and optionally, the average particle size of the first inorganic nano particles is 3 nm-10 nm.
  7. 7. A light-emitting device according to claim 6, wherein, The first inorganic nano-particle is a first N-type inorganic nano-particle, the second inorganic nano-particle is a second P-type inorganic nano-particle, or the first inorganic nano-particle is a first P-type inorganic nano-particle, the second inorganic nano-particle is a second N-type inorganic nano-particle, and/or The first N-type inorganic nanoparticle and the second N-type inorganic nanoparticle each independently comprise one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a group IIB-VIA semiconductor material, a group IIIA-VA semiconductor material, and a group IB-IIIA-VIA semiconductor material, the material of the first undoped metal oxide particle comprising one or more of ZnO, tiO 2 、SnO 2 、ZrO 2 、Ta 2 O 5 , the metal oxide in the first doped metal oxide particle comprising one or more of ZnO, tiO 2 、SnO 2 、ZrO 2 、Ta 2 O 5 、Al 2 O 3 , the doping element in the first doped metal oxide particle comprising one or more of Al, mg, li, mn, Y, la, cu, ni, zr, ce, in, ga, the group IIB-VIA semiconductor material comprising one or more of InP in ZnS, znSe, cdS, the group IIIA-VA semiconductor material comprising one or more of CuInS, cuGaS, wherein the doping element in the first doped metal oxide particle comprises one or more of InP in ZnS, znSe, cdS, the group IB-IIIA-VIA semiconductor material comprises one or more of CuInS, and the doping element in the first doped metal oxide particle comprises from 0.30 wt%; and/or The first P-type inorganic nanoparticle and the second P-type inorganic nanoparticle each independently comprise one or more of a second doped metal oxide particle, a second undoped metal oxide particle, a metal sulfide, a metal selenide, and a metal nitride, the metal oxide in the second doped metal oxide particle and the metal oxide in the second undoped metal oxide particle each independently comprise one or more of MoO 3 、WO 3 、NiO、CrO 3 、CuO、V 2 O 5 , the doping element in the second doped metal oxide particle comprises one or more of Mo, W, ni, cr, cu, V, the metal sulfide comprises one or more of CuS, moS 3 、WS 3 , the metal selenide comprises one or more of MoSe 3 、WSe 3 , and the metal nitride comprises P-type gallium nitride, wherein the doping element in the second doped metal oxide particle comprises 0.1wt% to 30wt%.
  8. 8. A light-emitting device according to claim 1, wherein, The material of the light-emitting layer comprises one or more of organic light-emitting materials and quantum dot light-emitting materials, wherein the organic light-emitting materials are selected from 4,4' -bis (N-carbazole) -1,1' -biphenyl, tris [2- (p-tolyl) pyridine iridium (III) ], 4' -tris (carbazole-9-yl) triphenylamine, tris [2- (p-tolyl) pyridine iridium ], diaryl anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF materials, The quantum dot luminescent material is selected from one or more of single-structure quantum dots, core-shell structure quantum dots and perovskite type quantum dots, wherein the single-structure quantum dot material, the core material of the core-shell structure quantum dots and the shell material of the core-shell structure quantum dots are respectively selected from II-VI group compounds, IV-VI group compounds, One or more of III-V compound and I-III-VI compound, wherein the shell layer of the quantum dot with the core-shell structure comprises one or more layers, the II-VI compound is selected from one or more of CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、ZnO、HgS、HgSe、HgTe、CdSeS、CdSeTe、CdSTe、ZnSeS、ZnSeTe、ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、CdZnSe、CdZnTe、CdHgS、CdHgSe、CdHgTe、HgZnS、HgZnSe、HgZnTe、CdZnSeS、CdZnSeTe、CdZnSTe、CdHgSeS、CdHgSeTe、CdHgSTe、HgZnSeS、HgZnSeTe and HgZnSTe, the IV-VI compound is selected from one or more of SnS、SnSe、SnTe、PbS、PbSe、PbTe、SnSeS、SnSeTe、SnSTe、PbSeS、PbSeTe、PbSTe、SnPbS、SnPbSe、SnPbTe、SnPbSSe、SnPbSeTe、SnPbSTe, the III-V compound is selected from one or more of GaN、GaP、GaAs、GaSb、AlN、AlP、AlAs、AlSb、InN、InP、InAs、InSb、GaNP、GaNAs、GaNSb、GaPAs、GaPSb、AlNP、AlNAs、AlNSb、AlPAs、AlPSb、InNP、InNAs、InNSb、InPAs、InPSb、GaAlNP、GaAlNAs、GaAlNSb、GaAlPAs、GaAlPSb、GaInNP、GaInNAs、GaInNSb、GaInPAs、GaInPSb、InAlNP、InAlNAs、InAlNSb、InAlPAs and InAlPSb, the I-III-VI compound is selected from one or more of CuInS 2 、CuInSe 2 and AgInS 2 , the quantum dot with the core-shell structure is selected from one or more of CdSe/CdSeS/CdS、InP/ZnSeS/ZnS、CdZnSe/ZnSe/ZnS、CdSeS/ZnSeS/ZnS、CdSe/ZnS、CdSe/ZnSe/ZnS、ZnSe/ZnS、ZnSeTe/ZnS、CdSe/CdZnSeS/ZnS and InP/ZnSe/ZnS, the material of the perovskite type quantum dot is selected from doped or undoped inorganic perovskite type semiconductor, Or an organic-inorganic hybrid perovskite semiconductor having the structural formula AMX 3 , wherein A is Cs + ion, M is a divalent metal cation selected from one or more of Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2 + 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ , X is a halogen anion selected from one or more of Cl - 、Br - 、I - , the structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX 3 , wherein B is an organic amine cation selected from CH 3 (CH 2 ) n-2 NH 3 + or [ NH 3 (CH 2 ) n NH 3 ] 2+ ], wherein n≥2, M is a divalent metal cation selected from one or more of Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ , X is a halogen anion selected from one or more of Cl - 、Br - 、I - , and/or The first electrode and the second electrode each independently comprise one or more of metal, carbon material and metal oxide, wherein the metal comprises one or more of Al, ag, cu, mo, au, ba, ca, yb and Mg, the carbon material comprises one or more of graphite, carbon nano-tube, graphene and carbon fiber, the metal oxide comprises a metal oxide electrode or a composite electrode formed by arranging metal between doped or undoped transparent metal oxide, the material of the metal oxide electrode comprises one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, moO 3 and AMO, and the composite electrode comprises one or more of AZO/Ag/AZO、AZO/Al/AZO、ITO/Ag/ITO、ITO/Al/ITO、ZnO/Ag/ZnO、ZnO/Al/ZnO、ZnS/Ag/ZnS、ZnS/Al/ZnS、TiO 2 /Ag/TiO 2 and TiO 2 /Al/TiO 2 .
  9. 9. The light-emitting device according to claim 4, wherein the first electrode is an anode, the first carrier functional layer is a hole transport layer, the second carrier functional layer is an electron transport layer, and the second electrode is a cathode, or wherein the first electrode is a cathode, the first carrier functional layer is an electron transport layer, the second carrier functional layer is a hole transport layer, and the second electrode is an anode.
  10. 10. A method of manufacturing a light emitting device, comprising the steps of: Providing a first electrode; Providing a first composite material, wherein the first composite material comprises first inorganic nano particles and a first shell layer coating the first inorganic nano particles, the material of the first shell layer comprises a first insulating polymer, and the first insulating polymer is arranged on the first electrode to form a first carrier functional layer; forming a light-emitting layer and a second electrode on the first carrier functional layer to obtain a light-emitting device; Or alternatively Providing a second electrode and a light emitting layer which are stacked; providing a first composite material, wherein the first composite material comprises first inorganic nano particles and a first shell layer coating the first inorganic nano particles, the material of the first shell layer comprises a first insulating polymer, and the first composite material is arranged on the light-emitting layer to form a first carrier functional layer; and forming a first electrode on the first carrier functional layer to obtain the light-emitting device.
  11. 11. The method of preparing the first composite material of claim 10, wherein the method of preparing the first composite material comprises: providing a mixed solution, wherein the mixed solution comprises a first insulating polymer monomer, first inorganic nano particles and a first solvent; And carrying out ultraviolet treatment on the mixed solution to obtain the first composite material.
  12. 12. The method of claim 11, wherein, The first insulating polymer monomer comprises one or more of an acid compound, an ester compound, an alcohol compound, an olefin compound, an anhydride compound and an amine compound, wherein the acid compound comprises an acrylic compound, wherein the acrylic compound comprises methacrylic acid, wherein the ester compound comprises one or more of an acrylic acid ester compound and an isocyanate, wherein the acrylic acid ester compound comprises one or more of methyl methacrylate and hydroxyethyl methacrylate, wherein the alcohol compound comprises a polyhydric alcohol, wherein the polyhydric alcohol comprises ethylene glycol, wherein the olefin compound comprises one or more of an alkene and an aromatic alkene, wherein the alkene comprises ethylene, wherein the aromatic alkene comprises styrene, wherein the anhydride compound comprises an aromatic anhydride compound, wherein the aromatic anhydride compound comprises one or more of a tetrafluoro-benzene dianhydride, a benzo-tetrafluoro-naphthalene dianhydride, wherein the acrylic acid ester compound comprises one or more of a methyl methacrylate and a hydroxyethyl methacrylate, wherein the alcohol compound comprises a polyhydric alcohol, wherein the polyhydric alcohol comprises a p-phenylene diamine, wherein the alkene comprises one or more of an alkene and an aromatic alkene, wherein the aromatic alkene comprises ethylene, the aromatic alkene comprises styrene, the aromatic anhydride comprises aromatic anhydride, the aromatic anhydride comprises one or more of tetrafluoro-benzene-four-fluorine-and benzothiophene dianhydride, the aromatic diamine, and the aromatic diamine comprises one or more of the aromatic diamine The first solvent comprises one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxy butanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, cresol, and/or In the mixed solution, the mass concentration of the first inorganic nano particles is 20 mg/mL-50 mg/mL, and/or In the mixed solution, the mass ratio of the first inorganic nano particles to the first insulating polymer monomer is (50-70): 60-90%, optionally the mass ratio of the first inorganic nano particles to the first insulating polymer monomer is (55-65): 35-45%, and/or The ultraviolet treatment comprises ultraviolet irradiation, wherein the wavelength of ultraviolet light of the ultraviolet irradiation is 260-300 nm, the light intensity of the ultraviolet light of the ultraviolet irradiation is 200 mu w/cm 2 ～300μw/cm 2 , the temperature of the ultraviolet irradiation is 60-80 ℃, and the time of the ultraviolet irradiation is 3-6 h.
  13. 13. The method of manufacturing according to claim 10, wherein disposing the first composite material on the first electrode or the light-emitting layer comprises providing a first dispersion including the first composite material and a second solvent, disposing the first dispersion on the first electrode or the light-emitting layer to form a first carrier functional layer, wherein, The second solvent comprises one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, cresol, and/or In the first dispersion liquid, the mass concentration of the first composite material is 20 mg/mL-40 mg/mL, and/or The method comprises the steps of arranging the first dispersion liquid on the first electrode or the light-emitting layer, and then carrying out first annealing, wherein the temperature of the first annealing is 80-140 ℃ and the time is 5-10 min.
  14. 14. The method of manufacturing a light-emitting device according to claim 10, further comprising forming a second carrier functional layer between the light-emitting layer and the second electrode, the method of manufacturing the second carrier functional layer comprising: Providing a second composite material comprising a second inorganic nanoparticle and a second shell layer coating the second inorganic nanoparticle, the material of the second shell layer comprising a second insulating polymer; And disposing the second composite material on the light-emitting layer or the second electrode to form a second carrier functional layer.
  15. 15. The method of manufacturing according to claim 14, wherein disposing the second composite material on the light-emitting layer or the second electrode comprises providing a second dispersion including the second composite material and a third solvent, disposing the second dispersion on the light-emitting layer or the second electrode to form a second carrier functional layer, wherein, The third solvent comprises one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, cresol, and/or In the second dispersion liquid, the mass concentration of the second composite material is 20 mg/mL-40 mg/mL, and/or And after the second dispersion liquid is arranged on the light-emitting layer or the second electrode, performing second annealing, wherein the temperature of the second annealing is 80-140 ℃ and the time is 5-10 min.
  16. 16. A display device comprising the light-emitting device according to any one of claims 1 to 9, or comprising the light-emitting device produced by the production method according to any one of claims 10 to 15.

Description

Light-emitting device, preparation method thereof and display device Technical Field The present application relates to the field of display technologies, and in particular, to a light emitting device, a method for manufacturing the light emitting device, and a display apparatus including the light emitting device. Background Light emitting devices that are widely used today are Organic Light Emitting Diodes (OLEDs) and quantum dot light emitting diodes (QLEDs). The OLED has excellent display performance such as self-luminescence, simple structure, ultra-light weight, fast response speed, wide viewing angle, low power consumption, flexible display, etc., and has become a mainstream technology in the field of display technology. QLEDs have the advantages of saturated color of the emitted light and tunable wavelength, and high quantum yields of photoinduced and electroluminescent light, which have become a powerful competitor for OLEDs in recent years. Conventional OLED and QLED device structures generally include an anode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a cathode. Under the action of the electric field, holes generated by the anode and electrons generated by the cathode of the light-emitting diode move, are respectively injected into the hole transmission layer and the electron transmission layer and finally migrate to the light-emitting layer, and when the hole transmission layer and the electron transmission layer meet at the light-emitting layer, energy excitons are generated, so that the light-emitting molecules are excited to finally generate visible light. Currently, the stability of the light emitting device is poor and needs to be further improved. Disclosure of Invention In view of the above, the present application provides a light emitting device, a method of manufacturing the same, and a display apparatus. The embodiment of the application is realized in such a way that the light-emitting device comprises a first electrode, a first carrier functional layer, a light-emitting layer and a second electrode which are arranged in a stacked manner, wherein the material of the first carrier functional layer comprises first inorganic nano particles and a first shell layer coating the first inorganic nano particles, and the material of the first shell layer comprises a first insulating polymer. Correspondingly, the embodiment of the application also provides a preparation method of the light-emitting device, which comprises the following steps: Providing a first electrode; Providing a first composite material, wherein the first composite material comprises first inorganic nano particles and a first shell layer coating the first inorganic nano particles, the material of the first shell layer comprises a first insulating polymer, and the first composite material is arranged on the first electrode to form a first carrier functional layer; forming a light-emitting layer and a second electrode on the first carrier functional layer to obtain a light-emitting device; Or alternatively Providing a second electrode and a light emitting layer which are stacked; providing a first composite material, wherein the first composite material comprises first inorganic nano particles and a first shell layer coating the first inorganic nano particles, the material of the first shell layer comprises a first insulating polymer, and the first composite material is arranged on the light-emitting layer to form a first carrier functional layer; and forming a first electrode on the first carrier functional layer to obtain the light-emitting device. Correspondingly, the embodiment of the application also provides a display device which comprises the light-emitting device or the light-emitting device manufactured by the manufacturing method. The light-emitting device provided by the application has higher stability. Drawings In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art. Fig. 1 is a schematic structural view of a light emitting device according to an embodiment of the present application; Fig. 2 is a schematic structural diagram of another light emitting device according to an embodiment of the present application; Fig. 3 is a schematic structural diagram of another light emitting device according to an embodiment of the present application; Fig. 4 is a schematic structural diagram of another light emitting device according to an embodiment of the present application; Fig. 5 is a schematic structural diagram of another light emitting devi