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CN-122028619-A - Display device

CN122028619ACN 122028619 ACN122028619 ACN 122028619ACN-122028619-A

Abstract

A display device is disclosed. The display device includes a substrate including a display region and a non-display region outside the display region, a sensor portion disposed in the display region, a plurality of first transistors disposed in the display region on the substrate and configured to include an oxide semiconductor layer, and a hydrogen capture pattern disposed in the sensor portion and adjacent to the oxide semiconductor layer of the first transistors.

Inventors

  • ZHENG ZHIHUAN

Assignees

  • 乐金显示有限公司

Dates

Publication Date
20260512
Application Date
20250929
Priority Date
20241111

Claims (19)

  1. 1. A display device, the display device comprising: a substrate including a display region and a non-display region outside the display region; a sensor portion having a transmissive region at the display region; A plurality of first transistors disposed in the display region on the substrate, each of the plurality of first transistors including an oxide semiconductor layer, and A hydrogen trapping pattern that is located in the transmissive region and is disposed adjacent to the oxide semiconductor layer of at least one of the plurality of first transistors on a plane.
  2. 2. The display device of claim 1, wherein the hydrogen capture pattern comprises a conductive oxide.
  3. 3. The display device of claim 1, wherein the hydrogen trapping pattern comprises a conductive oxide comprising indium.
  4. 4. The display device of claim 1, wherein the hydrogen capture pattern comprises a material having light transmittance at an infrared wavelength range.
  5. 5. The display device according to claim 1, wherein the hydrogen capturing pattern is located on the same layer as the oxide semiconductor layers of the plurality of first transistors.
  6. 6. The display device according to claim 1, wherein the hydrogen trapping pattern has a higher hydrogen trapping capacity than the oxide semiconductor layer of the plurality of first transistors.
  7. 7. The display device of claim 1, further comprising a sensor positioned below the substrate, Wherein the hydrogen capture pattern overlaps the sensor.
  8. 8. The display device according to claim 1, further comprising a polysilicon layer between the substrate and the oxide semiconductor layer, wherein at least one inorganic insulating film is provided between the oxide semiconductor layer and the polysilicon layer.
  9. 9. The display device of claim 8, wherein at least a portion of the polysilicon layer overlaps the hydrogen capture pattern.
  10. 10. The display device according to claim 1, wherein the oxide semiconductor layer of the at least one of the plurality of first transistors includes a first active layer and a second active layer, the first active layer and the second active layer having different carrier mobilities.
  11. 11. The display device according to claim 1, further comprising a second transistor corresponding to the display region, the second transistor comprising a polysilicon layer between the substrate and the oxide semiconductor layers of the plurality of first transistors.
  12. 12. The display device of claim 11, wherein, The display area includes a first area where the sensor portion is provided and a second area where the sensor portion is not provided, The first region of the substrate includes the transmissive region and a plurality of first light emitting parts, The second region of the substrate includes a plurality of second light emitting portions, and At the first region, electrodes of the plurality of first transistors and electrodes of the second transistor do not overlap the transmissive region.
  13. 13. The display device according to claim 12, wherein the hydrogen capturing pattern is provided between oxide semiconductor layers of adjacent first transistors of the plurality of first transistors at the first region.
  14. 14. The display device according to claim 12, wherein a density of the plurality of first transistors at the first region is smaller than a density of transistors including an oxide semiconductor layer at the second region.
  15. 15. The display device according to claim 12, wherein each of the plurality of first light-emitting portions and the plurality of second light-emitting portions is connected to any one of the plurality of first transistors.
  16. 16. The display device of claim 12, further comprising a planarization film over the plurality of first transistors and the hydrogen capture pattern, Wherein each of the first light emitting portion and the second light emitting portion includes a light emitting device including an anode, an intermediate layer, and a cathode, and on the planarizing film Wherein any one of the plurality of first transistors is connected to the anode through a contact hole in the planarizing film.
  17. 17. The display device according to claim 1, wherein the hydrogen capturing pattern is divided into a plurality of segments at the transmissive region, and a width of each of the plurality of segments is greater than a spacing between adjacent segments of the plurality of segments.
  18. 18. The display device according to claim 1, further comprising a second transistor including a polysilicon layer located between the substrate and the oxide semiconductor layer of the at least one of the plurality of first transistors at the non-display region of the substrate, and a third transistor including an active layer provided on the same layer as the oxide semiconductor layer of the at least one of the plurality of first transistors.
  19. 19. The display device according to claim 18, wherein carrier mobility of the oxide semiconductor layer of the at least one of the plurality of first transistors is different from carrier mobility of the active layer of the third transistor.

Description

Display device Technical Field The present disclosure relates to an apparatus, particularly such as, but not limited to, a display apparatus, and more particularly, to a light emitting display apparatus capable of improving sensitivity of a sensor portion and reliability of internal elements. Background Display devices for displaying images, such as televisions, monitors, smartphones, tablet computers, and notebook computers, are used in various modes and forms. The display device includes a plurality of pixels to display an image, and has transistors to control operations of the respective pixels. Among display devices, a light emitting display device having a light emitting device in a display panel without a separate light source is considered to be a competitive application for the purpose of compactness and clear color display of the device. The light emitting device includes an anode and a cathode facing each other as electrodes, and a light emitting layer between the anode and the cathode, and may include a common layer for transporting holes and electrons to the light emitting layer. Further, recent display devices are considering structures including sensor portions for various purposes, and various researches and developments are being made thereon. The description provided in the discussion of the related art section should not be taken as prior art merely because it is referred to or relevant in this section. The discussion of the related art section may contain information describing one or more aspects of the subject technology, and the description of this section is not intended to limit the present disclosure. Disclosure of Invention It is an object of the present disclosure to provide a light emitting display device having improved sensitivity of a sensor portion. Another object of the present disclosure is to provide a light emitting display device capable of improving reliability of a transistor. It is still another object of the present disclosure to provide a display device further including a configuration capable of preventing or reducing an influence caused by hydrogen or the like generated by an array structure such as an adjacent thin film transistor or the like in a transmission region having no metal structure, thereby improving reliability of the transmission region and increasing transmittance in the transmission region. It is still another object of the present disclosure to provide a display device having improved reliability by further providing a hydrogen trapping pattern capable of preventing or reducing operational degradation of elements due to movement between insulating films by hydrogen generated during a process. It is still another object of the present disclosure to provide a display device in which a hydrogen trapping pattern capable of reducing a failure rate of an element due to a flow of hydrogen that may affect an operation of the element, and thus reducing an amount of a material (e.g., gas, etchant, etc.) used in an entire manufacturing process for manufacturing the display device, thereby reducing generation of greenhouse gas during the manufacturing process, can be formed without providing an additional layer. Embodiments of the present disclosure provide a display device including a substrate including a display region and a non-display region surrounding the display region, a sensor portion disposed in the display region, a plurality of first transistors disposed in the display region on the substrate and configured to include an oxide semiconductor layer, and a hydrogen capture pattern disposed on the sensor portion and disposed adjacent to the oxide semiconductor layer of the first transistors. It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the inventive concepts claimed. Drawings The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this disclosure, illustrate embodiments of the disclosure and together with the description serve to explain the principles of the disclosure. In the drawings: fig. 1 is a plan view illustrating a display device according to an embodiment of the present disclosure; Fig. 2 is an enlarged view showing a region A1 of fig. 1; FIG. 3 is a circuit diagram of the first subpixel and the second subpixel of FIG. 1; FIG. 4 is a cross-sectional view taken along line I-I' of FIG. 2; FIG. 5 is a graph showing the wavelength dependent transmittance of a hydrogen capture pattern included in an embodiment of the present disclosure; Fig. 6 is a cross-sectional view illustrating a transistor and a hydrogen capturing pattern disposed in a region of an infrared sensor according to an embodiment of the present disclosure; Fig. 7 is a graph showing I-V characteristics of transistors in a display region of a sensor p