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CN-122028628-A - Preparation method of self-assembled monolayer, self-assembled monolayer and perovskite solar cell

CN122028628ACN 122028628 ACN122028628 ACN 122028628ACN-122028628-A

Abstract

The invention discloses a preparation method of a self-assembled monolayer, which comprises the steps of carrying out hydroxylation treatment on the surface of a conductive glass substrate, carrying out vapor deposition on the hydroxylated conductive glass substrate through a vapor phase precursor containing amphiphilic fluorosilane molecules F 13 C 6 H 4 SiCl 3 -Th-CHO, forming a uniform SAM layer on the surface of the conductive glass substrate, carrying out heat curing treatment, and forming a stable and ordered SAM layer on the surface of the conductive glass substrate. A self-assembled monolayer prepared by the method of preparing a self-assembled monolayer as described above. A perovskite solar cell is formed by sequentially depositing a perovskite layer, a hole transport layer and an electrode on a SAM layer on the surface of the conductive glass substrate. The self-assembled monolayer with high density, strong interface binding force and low water vapor invasion is prepared by adopting the designed and synthesized amphiphilic cross-linked SAM molecules and matching with the electric field assisted vapor deposition and heat curing steps, the comprehensive performance is obviously superior to that of the traditional SAM layer preparation method, and the stability of a perovskite component is improved.

Inventors

  • Zhao feiya
  • CHU WENJING
  • LIN JINXI
  • LIN JINHAN

Assignees

  • 常州亚玛顿股份有限公司

Dates

Publication Date
20260512
Application Date
20251231

Claims (10)

  1. 1. A method for preparing a self-assembled monolayer, comprising the steps of: S1, preprocessing a substrate, namely carrying out hydroxylation treatment on the surface of a conductive glass substrate; S2, electric field assisted vapor deposition, namely placing the conductive glass substrate obtained in the step S1 into an electric field assisted vapor deposition device, conveying a vapor precursor containing amphipathic fluorosilane molecules F 13 C 6 H 4 SiCl 3 -Th-CHO, and performing vapor deposition to form a uniform SAM layer on the surface of the conductive glass substrate; s3, performing heat curing, namely performing heat curing on the conductive glass substrate obtained in the step S3, and forming a stable and ordered SAM layer on the surface of the conductive glass substrate, wherein the SAM layer is a self-assembled monolayer.
  2. 2. The method of claim 1, wherein the conductive glass substrate in the step S1 is FTO or ITO, and the surface of the conductive glass substrate is subjected to hydroxylation treatment to form a hydroxylated structure on the surface of the conductive glass substrate.
  3. 3. The method for preparing a self-assembled monolayer according to claim 2, wherein the trichlorosilane-based SiCl 3 -in step S2 is hydrolyzed and then subjected to condensation reaction with the hydroxylation structure of the conductive glass matrix to form Si-O-M bond.
  4. 4. The method of preparing a self-assembled monolayer according to claim 3, wherein the conductive glass substrate in step S2 is placed in an electric field assisted vapor deposition apparatus, deposited at a temperature of 70-90 ℃ under 50-100Pa for 30-60 minutes, and a vertical electric field of 5-10V/cm is applied.
  5. 5. The method for preparing a self-assembled monolayer according to claim 1, wherein the thickness of the SAM layer in S3 is 2-5nm, the coverage rate of the SAM layer on the conductive glass substrate is >98%, the contact angle of the SAM layer is 110±5°, the surface roughness Rq of the SAM layer is <1nm, the water vapor permeability of the SAM layer is less than 10 -6 g/m 2 /day, and the mechanical strength of the SAM layer is >30MPa.
  6. 6. The method of preparing a self-assembled monolayer according to claim 5, wherein the heat-curing in S3 is performed at a temperature of 80-90 ℃ for a time of 10-30min.
  7. 7. The method of preparing a self-assembled monolayer according to claim 1, characterized in that the SAM molecules in the SAM layer consist of an anchor group, a linking group and a terminal group.
  8. 8. The method of claim 2, wherein the anchoring group is trichlorosilane SiCl 3 -forming a Si-O-M bond with the conductive oxide substrate, the linking group is a molecular skeleton, the linking group is highly fluorinated aromatic chain F 13 C 6 H 4 , and the terminal group is thiophene-aldehyde Th-CHO group.
  9. 9. A self-assembled monolayer, characterized in that it is produced by the method of producing a self-assembled monolayer according to any one of claims 1-8.
  10. 10. A perovskite solar cell, characterized in that a perovskite layer, a hole transport layer and an electrode are sequentially deposited on the SAM layer on the surface of the conductive glass substrate according to claim 9, to produce the perovskite solar cell.

Description

Preparation method of self-assembled monolayer, self-assembled monolayer and perovskite solar cell Technical Field The invention relates to the technical field of photovoltaics, in particular to a perovskite solar cell, and especially relates to a preparation method of a self-assembled monolayer, the self-assembled monolayer and the perovskite solar cell. Background In recent years, perovskite solar cells (Perovskite Solar Cell, PSC) have become an important direction for new generation photovoltaic technology due to their advantages of high photoelectric conversion efficiency, low cost, solution processibility, and the like. The laboratory efficiency of the solar cell is broken through by 26%, and the solar cell is close to a crystalline silicon solar cell. However, commercialization of perovskite batteries is still limited by stability problems, with interfacial degradation being considered one of the major factors responsible for performance degradation. To improve the interfacial stability, self-assembled monolayers (SAMs) are widely used for interfacial modification between perovskite and electrodes or transport layers. The SAM forms a covalent bond with the substrate through the chemical anchoring group, can effectively passivate interface defects, adjust energy level matching and inhibit charge recombination, thereby remarkably improving the efficiency and stability of the device. The existing SAM layer preparation method mainly comprises a solution soaking method, a spin coating method and a conventional vapor deposition method. The conventional preparation method has the following problems: 1. the uniformity of the film layer is poor, the solution soaking method is limited by the difference of the polarity and the surface energy of the solvent, molecular clusters are easy to form, and the coverage rate is less than 70 percent; 2. the order degree is low, self-assembly without external field assistance depends on intermolecular acting force, and the arrangement is disordered, so that the charge transmission is influenced; 3. the mechanical strength and the stability are poor, and the material is easy to desorb or decompose under damp and hot or illumination; 4. insufficient preparation controllability, solvent residue and batch difference lead to industrialization difficulty. Disclosure of Invention The invention aims to solve the technical problems that: in order to solve the technical problem of poor performance of a SAM layer in the prior art, the invention provides a preparation method of a self-assembled monolayer, the self-assembled monolayer and a perovskite solar cell, and adopts the designed and synthesized amphiphilic cross-linked SAM molecules to prepare the self-assembled monolayer with high compactness, strong interface binding force and low water vapor invasion by matching with the steps of electric field assisted vapor deposition and heat curing, wherein the comprehensive performance is obviously superior to that of the traditional SAM layer preparation method, and the stability of a perovskite component is improved. The technical scheme adopted for solving the technical problems is that the preparation method of the self-assembled monolayer comprises the following steps: S1, preprocessing a substrate, namely carrying out hydroxylation treatment on the surface of a conductive glass substrate; S2, electric field assisted vapor deposition, namely placing the conductive glass substrate obtained in the step S1 into an electric field assisted vapor deposition device, conveying a vapor precursor containing amphipathic fluorosilane molecules F 13C6H4SiCl3 -Th-CHO, and performing vapor deposition to form a uniform SAM layer on the surface of the conductive glass substrate; s3, performing heat curing, namely performing heat curing on the conductive glass substrate obtained in the step S3, and forming a stable and ordered SAM layer on the surface of the conductive glass substrate, wherein the SAM layer is a self-assembled monolayer. The preparation method of the self-assembled monolayer can improve the adhesive force and the stability of the self-assembled monolayer, has good structural rigidity and good thermal stability, improves interface wettability and energy level matching, and the comprehensive performance of the prepared SAM layer is obviously superior to that of the SAM layer prepared by the traditional SAM layer preparation method. Further, in the step S1, the conductive glass substrate is FTO or ITO, and the surface of the conductive glass substrate is subjected to hydroxylation treatment to form a hydroxylated structure on the surface of the conductive glass substrate. Further, in the step S2, trichlorosilane SiCl 3 -is hydrolyzed and then subjected to condensation reaction with a hydroxylation structure of the conductive glass matrix to form Si-O-M bonds. Further, the conductive glass substrate in the step S2 is placed in an electric field assisted vapor deposition device, deposite