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CN-122028630-A - Preparation method of perovskite solar cell based on template layer

CN122028630ACN 122028630 ACN122028630 ACN 122028630ACN-122028630-A

Abstract

The invention belongs to the technical field of perovskite photovoltaics, and provides a preparation method of a perovskite solar cell based on a template layer, wherein a first organic precursor solution layer is formed in advance in the process of preparing a perovskite light absorption layer, on one hand, the first organic precursor solution layer can be used as a seed crystal for crystal growth in the process of forming an inorganic frame layer, so that the crystallinity of the inorganic frame layer is improved, and the internal structure of the inorganic frame layer is more uniform; on the other hand, in the subsequent high temperature and humidity annealing process, the first organic precursor solution layer provides a guiding template effect on PbI 2 in the inorganic frame layer, loosens the inorganic layer with compact bottom interface, promotes the second organic precursor solution permeated into the inorganic frame layer to react with PbI 2 to generate a perovskite material, eliminates residual PbI 2 at the bottom interface, ensures the uniformity of the perovskite light absorption layer, obtains the perovskite light absorption layer with high quality and uniform texture, and finally improves the energy conversion efficiency of the perovskite solar cell.

Inventors

  • LIU MINGZHEN
  • LI FUCHENG
  • MAO LIN

Assignees

  • 电子科技大学

Dates

Publication Date
20260512
Application Date
20260313

Claims (8)

  1. 1. A method for fabricating a template layer-based perovskite solar cell, comprising the steps of: step 1, adopting a conductive substrate, and forming a hole transport layer on the surface of the conductive substrate; sequentially forming a first organic precursor solution layer, an inorganic frame layer and a second organic precursor solution layer on the surface of the hole transport layer to obtain a laminated structure; And 3, sequentially forming an electron transmission layer and a positive electrode on the surface of the perovskite light absorption layer to obtain a perovskite single-junction battery, or sequentially forming an electron transmission layer, a buffer layer, a front composite layer, a positive electrode and an anti-reflection layer on the surface of the perovskite light absorption layer, and forming a back electrode on the back surface of the conductive substrate to obtain the perovskite silicon laminated battery.
  2. 2. The method for manufacturing a perovskite solar cell based on a template layer according to claim 1, wherein in the step 2, the thickness ratio of the first organic precursor solution layer, the inorganic frame layer and the perovskite light absorbing layer is (2-5): (200-320): (350-550).
  3. 3. The method of fabricating a template layer based perovskite solar cell according to claim 1, wherein in step 2, the first organic precursor solution layer is formed by: Preparing a first organic precursor solution, setting the dosage of the first organic precursor solution to be 40-110 mu L, setting the spin coating rotating speed to be 2900-3000 rpm, the spin coating acceleration to be 2900-3000 rpm/s, and the spin coating time to be 25-30 s, and annealing for 8-10 min at the temperature of 95-100 ℃ after the spin coating is completed.
  4. 4. A method of fabricating a template layer based perovskite solar cell according to claim 3 wherein the first organic precursor solution is one or more of formamidine iodine, formamidine bromine, formamidine chloride, methyl ammonium iodide, methyl ammonium bromide, methyl ammonium chloride, butyl ammonium iodide, butyl ammonium bromide and butyl ammonium chloride (in any ratio).
  5. 5. The method of fabricating a template layer based perovskite solar cell according to claim 1, wherein in step 2, the inorganic framework layer is formed by: And (3) evaporating cesium bromide and lead iodide on the surface of the first organic precursor solution layer to form an inorganic framework layer, wherein the evaporation rate of cesium bromide is 0.11-0.12A/s, the evaporation rate of lead iodide is 1.08-1.09A/s, and the vacuum degree is 9.5-9.9X10 -4 Pa.
  6. 6. The method of fabricating a template layer based perovskite solar cell according to claim 1, wherein in step 2, the second organic precursor solution layer is formed by: Preparing a second organic precursor solution, wherein the second organic precursor solution comprises methyl ammonium bromide (MABr), methyl ammonium chloride (MACl), formamidine chloride (FACl), iodoformamidine (FAI) and an organic solvent, and the spin coating speed is set to be 3000-4000 rpm, the spin coating acceleration is 3000-4000 rpm/s, and the spin coating time is 25-30 s.
  7. 7. The method for preparing a template layer-based perovskite solar cell according to claim 6, wherein the mass ratio of iodoformamidine, methyl ammonium chloride, methyl ammonium bromide and formamidine chloride in the second organic precursor solution is 75-80:5.5-6.0:12-13:8-11.
  8. 8. The method for manufacturing a perovskite solar cell based on a template layer according to claim 1, wherein in the step 2, the specific process of high temperature and humidity annealing is as follows: the high temperature and humidity annealing temperature is set to be 150-170 ℃, the humidity is 50-75%, and the time is 25-30 min.

Description

Preparation method of perovskite solar cell based on template layer Technical Field The invention belongs to the technical field of perovskite photovoltaics, and particularly provides a preparation method of a perovskite solar cell based on a template layer. Background The perovskite solar cell is used as a third-generation novel photovoltaic material, has the characteristics of simple preparation process, large spectrum absorption range, low cost and the like, and in the perovskite solar cell, the perovskite light absorption layer is one of the key film layers. At present, a two-step method is generally adopted for preparing the perovskite light absorption layer, namely lead iodide and cesium bromide are firstly evaporated to form an inorganic framework layer, then, mixed organic cation precursor solution formed by methyl ammonium bromide (MABr), methyl ammonium chloride (MACl), formamidine chloride (FACl) and iodoformamidine (FAI) is spin-coated on the inorganic framework layer, and then, the perovskite light absorption layer is formed after high-temperature and high-humidity annealing. However, since the inorganic frame layer is thicker and has high compactness, at the initial stage of the spin coating process, the perovskite undergoes a crystallization process from top to bottom, and the methyl ammonium bromide (MABr), the methyl ammonium chloride (MACl), the formamidine chloride (FACl), the formamidine iodine (FAI) and the surface layer of the inorganic frame layer can form a denser perovskite sealing layer at first, and the perovskite layer can seriously obstruct further downward diffusion and permeation of the subsequent methyl ammonium bromide (MABr) and the iodoformamidine (FAI), so that part of the inorganic frame layer cannot be converted into perovskite materials, and the conversion of the bottom inorganic film is incomplete, so that the photoelectric conversion efficiency of the perovskite solar cell is low. In view of the problem, the invention provides a preparation method of perovskite solar cell based on template layer. Disclosure of Invention The invention aims to provide a preparation method of a perovskite solar cell based on a template layer, which is used for solving the problem that the photoelectric conversion efficiency of the perovskite solar cell is low because an inorganic frame layer at a bottom interface part cannot be converted into a perovskite material in the prior art. In order to achieve the above purpose, the invention adopts the following technical scheme: A method for fabricating a template layer-based perovskite solar cell, comprising the steps of: step 1, adopting a conductive substrate, and forming a hole transport layer on the surface of the conductive substrate; sequentially forming a first organic precursor solution layer, an inorganic frame layer and a second organic precursor solution layer on the surface of the hole transport layer to obtain a laminated structure; And 3, sequentially forming an electron transmission layer and a positive electrode on the surface of the perovskite light absorption layer to obtain a perovskite single-junction battery, or sequentially forming an electron transmission layer, a buffer layer, a front composite layer, a positive electrode and an anti-reflection layer on the surface of the perovskite light absorption layer, and forming a back electrode on the back surface of the conductive substrate to obtain the perovskite silicon laminated battery. Further, in the step 2, the thickness ratio of the first organic precursor solution layer, the inorganic frame layer and the perovskite light absorption layer is (2-5): (200-320): (350-550). Further, in step 2, the forming process of the first organic precursor solution layer is as follows: Preparing a first organic precursor solution, setting the dosage of the first organic precursor solution to be 40-110 mu L, setting the spin coating rotating speed to be 2900-3000 rpm, the spin coating acceleration to be 2900-3000 rpm/s, and the spin coating time to be 25-30 s, and annealing for 8-10 min at the temperature of 95-100 ℃ after the spin coating is completed. Further, the first organic precursor solution is one or more (any ratio) of formamidine iodine, formamidine bromine, formamidine chlorine, methyl ammonium iodide, methyl ammonium bromide, methyl ammonium chloride, butyl ammonium iodide, butyl ammonium bromide and butyl ammonium chloride. Further, in step 2, the inorganic frame layer is formed by: And (3) evaporating cesium bromide and lead iodide on the surface of the first organic precursor solution layer to form an inorganic framework layer, wherein the evaporation rate of cesium bromide is 0.11-0.12A/s, the evaporation rate of lead iodide is 1.08-1.09A/s, and the vacuum degree is 9.5-9.9X10 -4 Pa. Further, in step 2, the forming process of the second organic precursor solution layer is as follows: Preparing a second organic precursor solution, wherein the second organic precursor solu