CN-122028631-A - Device and method for preparing perovskite layer by low-pressure vapor deposition

CN122028631ACN 122028631 ACN122028631 ACN 122028631ACN-122028631-A

Abstract

The invention discloses a device and a method for preparing a perovskite layer by low-pressure vapor deposition, wherein the device comprises a feeding transition cabin, an organic salt evaporation device connected with the feeding transition cabin, a discharging transition cabin connected with the organic salt evaporation device, and an annealing device connected with the discharging transition cabin, wherein a rotating platform, a crystal oscillator probe and a source are arranged in the organic salt evaporation device, an inorganic salt carrier is arranged on the rotating platform, the source is arranged on the right opposite side of the rotating platform, the crystal oscillator probe is arranged between the rotating platform and the source, and a heating plate is arranged on the inorganic salt carrier and used for heating inorganic salt. According to the invention, the inorganic salt skeleton prepared by the evaporation method is placed in the low-pressure organic salt atmosphere chamber for reaction, so that the diffusion and reaction kinetics of organic salt molecules are effectively promoted, the aim of completely and uniformly converting the inorganic salt skeleton is fulfilled, and the perovskite thin film with high crystallization quality and low defect state is obtained, so that the perovskite thin film has important research significance in promoting the industrialization process of perovskite batteries.

Inventors

ZHOU XIAOYING
LIU HAITAO
ZHU FENG
ZHU JIA
HUANG GUOPING
LI JINGNAN
WANG LITING
Huan Yanhe
GONG LEI
ZHAO GUIXIANG
SUN HANG
CHEN LI
DU JINGLIANG
TIAN DEZHOU

Assignees

中节能太阳能科技（镇江）有限公司

Dates

Publication Date: 20260512
Application Date: 20260210

Claims (10)

1. The device for preparing the perovskite layer by low-pressure vapor deposition is characterized by comprising a feeding transition cabin, an organic salt evaporation device connected with the feeding transition cabin, a discharging transition cabin connected with the organic salt evaporation device, and an annealing device connected with the discharging transition cabin, wherein a rotating platform, a crystal oscillator probe and a source are arranged in the organic salt evaporation device, an inorganic salt carrier is arranged on the rotating platform, the source is arranged on the right opposite side of the rotating platform, the crystal oscillator probe is arranged between the rotating platform and the source, and a heating plate is arranged on the inorganic salt carrier and used for heating inorganic salt.
2. The apparatus for preparing a perovskite layer by low-pressure vapor deposition according to claim 1, wherein an annealing station, a temperature and humidity monitor and an organic atmosphere monitor are arranged in the annealing equipment.
3. A method for producing a perovskite layer using the apparatus of any one of claims 1-2, comprising the steps of: The method comprises the steps of preparing an inorganic salt sample by adopting a two-element co-evaporation method, preheating an inorganic salt carrying platform to a preset temperature, placing an organic salt material in a source, vacuumizing in an organic salt evaporation device, heating the source with the organic salt placed to a specified temperature, selecting the organic salt to be in a single-source or multi-source co-evaporation mode, moving the inorganic salt sample from a transition cabin to the inorganic salt carrying platform, maintaining the preset temperature on the inorganic salt carrying platform, starting the organic salt evaporation device, starting organic salt to be deposited on the inorganic salt, and enabling a product to enter an annealing device to carry out an annealing procedure after deposition is finished.
4. The method for preparing a perovskite layer according to claim 3, wherein the inorganic salt sample is prepared by using PbI 2 and CsBr, and the evaporation rate ratio is CsBr: pbI 2 =0.1:1 to 0.2:1.
5. The method for preparing a perovskite layer according to claim 3, wherein the inorganic salt carrier is preheated to 50-150 ℃.
6. A method of preparing a perovskite layer according to claim 3, wherein the organic salt is selected from FAI, MAI, FACl or MACl.
7. A method of producing a perovskite layer according to claim 3, wherein the organic salt evaporation apparatus is evacuated to 1e -6 ~1e -4 Torr.
8. A method of preparing a perovskite layer according to claim 3, wherein the source of the organic salt is heated to 80 to 300 ℃.
9. The method for preparing a perovskite layer according to claim 3, wherein the inorganic salt sample is moved from the transition cabin to the inorganic salt carrier, and after the inorganic salt carrier heats the inorganic salt sample for 0-2 min, the organic salt evaporation equipment is started.
10. A method of producing a perovskite layer according to claim 3, wherein the atmosphere during the annealing process is air, nitrogen or an organic atmosphere.

Description

Device and method for preparing perovskite layer by low-pressure vapor deposition Technical Field The invention relates to a preparation method and a device for a perovskite layer, in particular to a device and a method for preparing the perovskite layer by low-pressure gas phase deposition, and belongs to the technical field of perovskite. Background Perovskite solar cells are representative of new generation photovoltaic technology, and the process for preparing high-performance devices thereof is always the research core. At present, the preparation of the perovskite light absorption layer mainly depends on a solution method, but the method faces inherent challenges such as solvent toxicity, difficulty in controlling uniformity of a film, difficulty in realizing precise regulation and control of complex components and the like in large-scale production. To overcome these bottlenecks, the full vapor deposition method has the advantages of no solvent, good film formation uniformity, easy integration and the like, but generally requires the simultaneous evaporation of a plurality of organic and inorganic sources to be accurately controlled, has extremely severe requirements on equipment and a control system, and causes complex process and high cost. On the basis, a gas-solid reaction method is developed, namely, an inorganic salt skeleton is deposited firstly and then reacts with organic salt vapor, and the method simplifies the process, but when the process is carried out under normal pressure or higher pressure, the organic salt vapor has insufficient diffusion and permeation capability in the inorganic salt skeleton, so that incomplete reaction is easily caused, a large amount of unconverted inorganic salt remains at the interface, the formed perovskite film has poor crystallization quality and high defect density, and finally the photoelectric conversion efficiency and stability of the battery are limited. Therefore, development of a novel method for preparing perovskite layer in vapor phase, which can achieve the advantages of simple preparation, high quality of thin film and controllable process, is needed. Disclosure of Invention The first object of the invention is to provide a device for preparing perovskite layer by low-pressure vapor deposition, which can achieve the advantages of simple preparation, high quality of thin film and controllable process. In order to achieve the first object, the technical scheme of the perovskite layer preparation device provided by the invention is as follows: The invention discloses a device for preparing a perovskite layer by low-pressure vapor deposition, which comprises a feeding transition cabin, an organic salt evaporation device connected with the feeding transition cabin, a discharging transition cabin connected with the organic salt evaporation device, and an annealing device connected with the discharging transition cabin, wherein a rotating platform, a crystal oscillator probe and a source are arranged in the organic salt evaporation device, an inorganic salt carrier is arranged on the rotating platform, the source is arranged on the right opposite side of the rotating platform, the crystal oscillator probe is arranged between the rotating platform and the source, and a heating plate is arranged on the inorganic salt carrier and used for heating inorganic salt. Wherein, annealing equipment is equipped with annealing platform, humiture monitoring appearance and organic atmosphere monitoring appearance in the annealing equipment. In order to achieve the second object, the technical scheme of the perovskite layer preparation device provided by the invention is as follows: The method for preparing the perovskite layer comprises the following steps of: The method comprises the steps of preparing an inorganic salt sample by adopting a two-element co-evaporation method, preheating an inorganic salt carrying platform to a preset temperature, placing an organic salt material in a source, vacuumizing in an organic salt evaporation device, heating the source with the organic salt placed to a specified temperature, selecting the organic salt to be in a single-source or multi-source co-evaporation mode, moving the inorganic salt sample from a transition cabin to the inorganic salt carrying platform, maintaining the preset temperature on the inorganic salt carrying platform, starting the organic salt evaporation device, starting organic salt to be deposited on the inorganic salt, and enabling a product to enter an annealing device to carry out an annealing procedure after deposition is finished. The inorganic salt sample is prepared by using PbI 2 and CsBr, the evaporation rate ratio is CsBr, pbI 2 =0.1:1-0.2:1, and the preferable thickness is 300-500 nm. Wherein the inorganic salt carrier is preheated to 50-150 ℃. Wherein the organic salt is selected from formamidine iodide FAI, methyl iodinated amine MAI, formamidine hydrochloride FACl or methylamine chloride MACl.