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CN-122028632-A - Perovskite material layer and preparation method thereof, photoconductive structure, diode and detector

CN122028632ACN 122028632 ACN122028632 ACN 122028632ACN-122028632-A

Abstract

The application discloses a perovskite material layer, a preparation method thereof, a photoconductive structure, a diode and a detector. The preparation method comprises the steps of coating perovskite precursor liquid on a substrate to form a perovskite wet film, carrying out primary annealing treatment on the perovskite wet film to obtain a wet film to be treated, carrying out imprinting patterning treatment on the wet film to be treated, and carrying out any one of annealing-free vacuum auxiliary treatment and secondary annealing treatment to obtain a perovskite material layer with a patterned surface. The method can ensure the consistency of the size, the shape and the arrangement height of each pixel, greatly ensure the quality stability of products, overcome the difficult problem that the surface of a perovskite thick film is difficult to pattern, effectively limit the leakage of light or electric signals among pixels, reduce charge crosstalk and enhance the imaging capability of devices.

Inventors

  • LI XING
  • TANG JIXIANG
  • JIA RUI
  • CAI MOLANG

Assignees

  • 中国科学院微电子研究所

Dates

Publication Date
20260512
Application Date
20241112

Claims (10)

  1. 1. A method of preparing a patterned perovskite material layer, the method comprising: coating perovskite precursor liquid on a substrate to form a perovskite wet film; Carrying out one-stage annealing treatment on the perovskite wet film to obtain a wet film to be treated; and carrying out imprinting patterning treatment on the wet film to be treated, and carrying out any one of non-annealing vacuum auxiliary treatment and two-stage annealing treatment to obtain the perovskite material layer with the surface patterned.
  2. 2. The method of manufacturing a patterned perovskite material layer according to claim 1, wherein the performing an imprint patterning process on the wet film to be processed, and any one of an annealing-free vacuum assist process and a two-stage annealing process, comprises: Carrying out the imprinting patterning treatment on the wet film to be treated and carrying out the annealing-free vacuum auxiliary treatment at the same time, or, Carrying out the imprinting patterning treatment on the wet film to be treated and carrying out the two-stage annealing treatment at the same time, or, And after the imprinting patterning treatment of the wet film to be treated is finished, carrying out two-stage annealing treatment on the wet film to be treated.
  3. 3. The method of claim 1, wherein the patterned perovskite material layer is formed by patterning a perovskite material layer, The treatment time of the non-annealing vacuum auxiliary treatment is 10 min-4 h; The annealing temperature of the first annealing treatment is 50-130 ℃ and the annealing time is 10 min-4 h; the annealing temperature of the two-stage annealing treatment is 80-120 ℃, and the annealing time is 5-10 h.
  4. 4. The method of fabricating a patterned perovskite material layer according to claim 1, wherein the subjecting the wet film to be processed to an imprint patterning process comprises: and applying pressure to the wet film to be processed by using a preset pattern template to carry out imprinting, wherein the imprinting pressure is 100 KPa-1 MPa, and the imprinting time is 10 min-4 h.
  5. 5. A perovskite material layer produced by a method of producing a patterned perovskite material layer as claimed in any one of claims 1 to 4.
  6. 6. A photoconductive structure comprising a conductive substrate, a perovskite thick film and an electrode, which are sequentially stacked and connected from bottom to top, and prepared by the method for preparing a patterned perovskite material layer according to any one of claims 1 to 4.
  7. 7. A photodiode is characterized by comprising an N-I-P type photodiode or a P-I-N type photodiode; The N-I-P type photodiode comprises a conductive substrate, an electron transport layer, a perovskite thick film, a hole transport layer and an electrode, wherein the conductive substrate, the electron transport layer and the perovskite thick film, the hole transport layer and the electrode are sequentially stacked and connected from bottom to top, and the perovskite thick film, the hole transport layer and the electrode are manufactured by adopting the manufacturing method of the patterned perovskite material layer according to any one of claims 1 to 4; the P-I-N type photodiode comprises a conductive substrate, a hole transport layer, a perovskite thick film, an electron transport layer and an electrode, wherein the conductive substrate, the hole transport layer, the perovskite thick film, the electron transport layer and the electrode are sequentially stacked and connected from bottom to top, and the perovskite thick film, the electron transport layer and the electrode are prepared by adopting the preparation method of the patterned perovskite material layer according to any one of claims 1 to 4; The thickness of the perovskite thick film is 50-800 mu m, the thickness of the hole transport layer is 15-50 nm, and the thickness of the electrode is 80-600 nm.
  8. 8. A photodiode is characterized by comprising an N-I-P type photodiode or a P-I-N type photodiode; the N-I-P type photodiode comprises a conductive substrate, an electron transport layer, an interface modification layer, a perovskite thick film, a hole transport layer and an electrode, wherein the conductive substrate, the electron transport layer, the interface modification layer and the perovskite thick film, the hole transport layer and the electrode are sequentially stacked and connected from bottom to top, and the perovskite thick film, the hole transport layer and the electrode are manufactured by adopting the manufacturing method of the patterned perovskite material layer according to any one of claims 1 to 4; The P-I-N type photodiode comprises a conductive substrate, a hole transport layer, a perovskite thick film, an electron transport layer, an interface modification layer and an electrode, wherein the conductive substrate, the hole transport layer, the perovskite thick film, the electron transport layer, the interface modification layer and the electrode are sequentially stacked and connected from bottom to top, and the perovskite thick film, the electron transport layer, the interface modification layer and the electrode are prepared by the preparation method of the patterned perovskite material layer according to any one of claims 1 to 4; The thickness of the perovskite thick film is 50-800 mu m, the thickness of the hole transport layer is 15-50 nm, the thickness of the electrode is 80-600 nm, and the thickness of the interface modification layer is 1-10 nm.
  9. 9. A radiation detector, comprising: The photoconductive structure of claim 6 or the photodiode of claim 7 or the photodiode of claim 8.
  10. 10. The radiation detector according to claim 9, wherein, The cavity transmission layer in the photodiode is made of at least one material selected from 2,2', 7' -tetra [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobifluorene, poly (3, 4-ethylenedioxythiophene) polystyrene sulfonate, nickel oxide, copper thiocyanate, poly [ di (4-phenyl) (2, 4, 6-trimethylphenyl) amine and polyvinylcarbazole; The electron transport layer in the photodiode is made of at least one material selected from fullerene, fullerene derivative, tin oxide, titanium dioxide and zinc oxide; The interface modification layer in the photodiode is made of at least one material selected from lithium fluoride, lithium oxide, 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline and molybdenum trioxide; The photoconductive structure or the photodiode electrode is made of at least one material selected from gold, silver, copper and carbon.

Description

Perovskite material layer and preparation method thereof, photoconductive structure, diode and detector Technical Field The application relates to the technical field of perovskite materials, in particular to a perovskite material layer, a preparation method thereof, a photoconductive structure, a diode and a detector. Background In recent years, perovskite materials have demonstrated great application potential in the field of X-ray detection due to the advantages of high radiation absorption coefficient, high carrier mobility, high sensitivity, low detection limit, and the like. Currently, a photolithography process is generally used for patterning the surface of a perovskite material. Continuing the patterning process with a photolithographic process still has the following problems: (1) Perovskite materials are very sensitive to moisture and oxygen and are easy to degrade, and part of perovskite materials can degrade or change phase under ultraviolet irradiation, so that the perovskite structure can be damaged by common chemicals (such as developer and etchant) in the photoetching process, ultraviolet light and other environmental factors; (2) Perovskite materials are sensitive to temperature, the structure of the perovskite materials can be changed or decomposed due to high temperature, and irreversible damage can be caused to the perovskite by high temperature steps involved in the photoetching process; (3) The perovskite material layer surface may not be smooth enough, which may affect the adhesion of the photoresist on its surface and the quality of patterning, and surface defects or non-uniformities may affect the accuracy of the final pattern; (4) Conventional photoresists and other lithography-assist materials may be incompatible with perovskite materials, resulting in patterning failure or reduced device performance. Disclosure of Invention In view of the above, the application provides a perovskite material layer, a preparation method thereof, a photoconductive structure, a diode and a detector, which overcome the problem that the surface of the perovskite material layer is difficult to pattern, effectively limit the leakage of light or electric signals between pixels, and reduce charge crosstalk. According to a first aspect of the present application, there is provided a method of preparing a patterned perovskite material layer, comprising: coating perovskite precursor liquid on a substrate to form a perovskite wet film; Carrying out one-stage annealing treatment on the perovskite wet film to obtain a wet film to be treated; and carrying out imprinting patterning treatment on the wet film to be treated, and carrying out any one of non-annealing vacuum auxiliary treatment and two-stage annealing treatment to obtain the perovskite material layer with the surface patterned. Optionally, the performing an imprint patterning process on the wet film to be processed, and any one of an annealing-free vacuum auxiliary process and a two-stage annealing process, includes: Carrying out the imprinting patterning treatment on the wet film to be treated and carrying out the annealing-free vacuum auxiliary treatment at the same time, or, Carrying out the imprinting patterning treatment on the wet film to be treated and carrying out the two-stage annealing treatment at the same time, or, And after the imprinting patterning treatment of the wet film to be treated is finished, carrying out two-stage annealing treatment on the wet film to be treated. Optionally, the annealing temperature of the annealing treatment is 50-130 ℃ and the annealing time is 10 min-4 h. Optionally, the annealing-free vacuum auxiliary treatment time is 10 min-4 h. Optionally, the annealing temperature of the two-stage annealing treatment is 80-120 ℃ and the annealing time is 5-10 h. Optionally, the performing imprint patterning on the wet film to be treated includes: and applying pressure to the wet film to be processed by using a preset pattern template to carry out imprinting, wherein the imprinting pressure is 100 KPa-1 MPa, and the imprinting time is 10 min-4 h. Optionally, the preparation method of the perovskite material layer further comprises: According to a second aspect of the present application there is provided a perovskite material layer, produced by the method of producing a patterned perovskite material layer as described above. According to a third aspect of the present application, there is provided a photoconductive structure comprising a conductive substrate, a perovskite thick film and an electrode, which are sequentially stacked and connected from bottom to top, and prepared by the above-described method for preparing a patterned perovskite material layer. According to a fourth aspect of the present application, there is provided a photodiode comprising an N-I-P type photodiode or a P-I-N type photodiode; The N-I-P type photodiode comprises a conductive substrate, an electron transport layer, a perovskite thick film,