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CN-122028646-A - Electronic device electrode and preparation method and application thereof

CN122028646ACN 122028646 ACN122028646 ACN 122028646ACN-122028646-A

Abstract

The invention discloses an electrode of an electronic device, a preparation method and application thereof. The invention relates to an assembly method of an electrode of an electronic device, which comprises the following steps of 1) preparing a stretch-resistant adhesive layer on a substrate, quenching, preparing an electrode layer on the stretch-resistant adhesive layer, performing oxygen plasma treatment, stripping and fixing on a bonding fixture to obtain an upper layer structure, 2) evaporating an electron beam to obtain the electrode layer on another substrate, spin-coating an interface layer on the electrode layer, performing oxygen plasma treatment, spin-coating a semiconductor layer on the interface layer, fixing the substrate surface on another bonding fixture to obtain a lower layer structure, and 3) aligning and fixing one end of the electrode layer in the upper layer structure and one end of the semiconductor layer in the lower layer structure together, extending and exhausting air to the other end, and cutting off redundant parts of the bonding fixture along the substrate in the lower layer structure to complete the assembly of the electrode of the electronic device. The invention realizes the nondestructive bonding of the electrode and the semiconductor interface under the room temperature condition.

Inventors

  • LIU YUNQI
  • Guo ankang
  • ZHOU XUEYANG
  • YANG XUELI
  • GUO YUNLONG

Assignees

  • 中国科学院化学研究所

Dates

Publication Date
20260512
Application Date
20241112

Claims (10)

  1. 1. The electronic device electrode is characterized by comprising an upper layer structure and a lower layer structure, wherein the upper layer structure sequentially comprises a bonding clamp, an anti-stretching adhesion layer and an electrode layer from top to bottom, and the lower layer structure sequentially comprises a semiconductor layer, an interface layer, an electrode layer, a substrate and a bonding clamp from top to bottom.
  2. 2. The electronic device electrode according to claim 1, wherein the material for preparing the stretch-resistant adhesive layer is at least one selected from the group consisting of polyvinyl alcohol, polystyrene, and polydimethylsiloxane; the thickness of the stretch-proofing adhesive layer is 1 nm-100 mu m; the electrode layer in the upper layer structure and the electrode material in the electrode layer in the lower layer structure are selected from at least one of iron, cobalt and nickel or an alloy composed of at least two of iron, cobalt and nickel; The thickness of the electrode layers is 1-100 nm.
  3. 3. The electronic device electrode according to claim 1 or 2, wherein the material of which the semiconductor layer is made is selected from at least one of poly (2, 5-bis (2-octyldodecyl) -3, 6-bis (thiophen-2-yl) diketopyrrolo [3,4-C ] pyrrole-1, 4-dione-alt-thiophene [3,2-b ] thiophene), poly (2, 5-bis (3-alkylthiophen-2-yl) thiophene [3,2-b ] thiophene, poly (tetrathiopheneacetic acid diketopyrrolo), polyisoindigo dithiene, poly (3-hexylthiophene), poly {2, 5-bis (2-octyl) -3, 6-dithiopyridylthiophene } and methyl [6,6] -phenyl-C61-butyrate; The thickness of the semiconductor layer is 1 nm-1 mm.
  4. 4. An electronic device electrode according to any one of claims 1-3, characterized in that the material from which the interface layer is made is selected from any one of magnesium oxide, aluminum oxide, gallium nitride, graphene and barium titanate; the interface layer has a thickness of 0.1nm to 1 μm.
  5. 5. The electronic device electrode according to any one of claims 1 to 4, wherein the material of the substrate is selected from at least one of silicon wafer, glass, ceramic, and quartz; The material for manufacturing the attaching clamp is at least one selected from polyethylene, polypropylene, polyvinyl chloride, polystyrene, polyethylene terephthalate, polycarbonate and nylon film; The thickness of the attaching clamp is 100 nm-1 cm.
  6. 6. The method for assembling an electrode for an electronic device according to any one of claims 1 to 5, comprising the steps of 1) preparing the stretch-resistant adhesive layer on the substrate, quenching the layer, preparing the electrode layer in the upper layer structure on the stretch-resistant adhesive layer, performing oxygen plasma treatment, then peeling and fixing the electrode layer on the bonding jig, and performing vacuum sealing to obtain the upper layer structure; 2) An electrode layer in the lower layer structure with the coercive force different from that of the electrode layer in the upper layer structure is obtained on the other substrate by adopting electron beam evaporation, then the interface layer is spin-coated on the electrode layer, then oxygen plasma treatment is carried out, the semiconductor layer is spin-coated on the interface layer, and finally the treated substrate surface is fixed on the other attaching clamp for vacuum sealing, so that the lower layer structure is obtained; 3) And under the room temperature condition, aligning and fixing the electrode layer in the upper layer structure with one end of the semiconductor layer in the lower layer structure, extending and exhausting air to the other end, and cutting off the redundant part of the attaching clamp along the substrate in the lower layer structure to complete the assembly of the electrode of the electronic device.
  7. 7. The method according to claim 6, wherein in step 1), the peeling is achieved by a quenching method; The preparation method of the anti-stretching adhesive layer comprises any one of dripping coating, spin coating, knife coating, roll coating, film brushing and film drawing; The solvent for preparing the material of the stretch-proof adhesive layer is at least one selected from water, ethanol, isopropanol, chloroform, acetone, cyclohexane, n-hexane, isohexane and toluene; The preparation method of the electrode layer in the upper layer structure is any one of molecular beam epitaxy, magnetron sputtering, pulse laser deposition, atomic layer deposition, chemical vapor deposition, thermal evaporation, electron beam evaporation and stripping.
  8. 8. The method according to claim 7, wherein in step 1), the pre-quenching heating temperature of the quenching method is 50-200 ℃, the pre-quenching heating time is 1 min-48 h, the quenching temperature is-100 ℃, and the quenching time is 1 min-48 h; In the step 1) and the step 2), the mode of fixing the binding clamp adopts any one of glue, double-sided adhesive tape, clip or rope binding.
  9. 9. The method according to any one of claims 6 to 8, wherein the interfacial layer is prepared by any one of molecular beam epitaxy, magnetron sputtering, pulsed laser deposition, atomic layer deposition, chemical vapor deposition, thermal evaporation, electron beam evaporation, and lift-off; The preparation method of the semiconductor layer comprises any one of evaporation, drop coating, spin coating, knife coating, roll coating, film brushing and film drawing; the solvent for preparing the semiconductor layer raw material is any one of water, ethanol, isopropanol, chloroform, acetone, cyclohexane, normal hexane, isohexane and toluene, wherein the concentration of the solvent is 0.1 g/L-100 g/L; the annealing temperature of the semiconductor layer is 20-200 ℃.
  10. 10. Use of an electronic device electrode according to any of claims 1-5 for the preparation of an organic spin valve device.

Description

Electronic device electrode and preparation method and application thereof Technical Field The invention belongs to the technical field of semiconductor devices and spintronics, and relates to an electrode of an electronic device, a preparation method and application thereof. Background An Organic Spin Valve (OSV) device is a basic device in organic spintronics research, and has a wide application prospect in the fields of magnetic field sensors, novel memories, electronic switches, spin logic gates and the like. The organic spin valve device is composed of Ferromagnetic (FM) electrodes with different coercive forces on two sides and an organic semiconductor film in the middle, and the interface between the electrodes and the organic semiconductor must be kept relatively flat for effective spin transport of the organic semiconductor layer. In the process of preparing the top electrode by adopting the traditional electron beam evaporation method, metals can inevitably permeate into the semiconductor film and transfer heat to the low-heat-conduction organic film, so that the organic semiconductor film is softened and damaged, and the device performance is influenced. The polymer-assisted strain-limited transfer technology reported so far effectively solves the problem of metal cluster penetration, and constructs a uniform and nondestructive interface between a Ferromagnetic (FM) electrode and a non-magnetic material (NMM) in a spin electronic device. However, the assembly temperature of the technology is 400K, a certain degree of thermal damage is caused to the semiconductor film, and the surface of the silicon wafer or the glass sheet is required to be modified by using octadecyl silane (OTS), so that the medicine has stronger irritation and corrosiveness. Therefore, there is a need to design a more efficient, compact and safe way to achieve the lossless transfer of ferromagnetic electrodes at room temperature to promote the stability and reliability of organic spin valve devices necessary in the field of building full spin logic gates and the like. Disclosure of Invention The invention aims to provide an electronic device electrode, and a preparation method and application thereof. The invention eliminates the problem that the top electrode permeates into the organic semiconductor film in the device manufacturing process, realizes a clean and smooth space interface and is used for effective spin filtration. The assembly temperature is lowered to room temperature to prevent thermal damage of the organic semiconductor film, thereby improving the performance and reliability necessary for the device in the application process. The invention also simplifies the stripping process of the electrode, replaces the prior OTS sacrificial layer stripping technology by using the quenching stripping technology, and ensures that the electrode is not stretched in the stripping process, thereby maintaining the size of magnetic domains and the regularity thereof and ensuring the nondestructive transfer of the ferromagnetic electrode. The invention provides an electronic device electrode which comprises an upper layer structure and a lower layer structure, wherein the upper layer structure sequentially comprises a bonding clamp, an anti-stretching adhesion layer and an electrode layer from top to bottom, and the lower layer structure sequentially comprises a semiconductor layer, an interface layer, an electrode layer, a substrate and a bonding clamp from top to bottom. In the electronic device electrode, the material for preparing the stretch-resistant adhesive layer is at least one selected from polyvinyl alcohol, polystyrene and polydimethylsiloxane; the thickness of the stretch-proofing adhesive layer can be 1 nm-100 mu m; the electrode layer in the upper layer structure and the electrode material in the electrode layer in the lower layer structure are selected from at least one of iron, cobalt and nickel or an alloy composed of at least two of iron, cobalt and nickel; the thickness of the electrode layer can be 1-100 nm. In the above electronic device electrode, the material for preparing the semiconductor layer is at least one selected from poly (2, 5-bis (2-octyldodecyl) -3, 6-bis (thiophen-2-yl) diketopyrrolopyrrole [3,4-C ] pyrrole-1, 4-dione-alt-thiophene [3,2-b ] thiophene) (english name is abbreviated to DPPT-TT), poly (2, 5-bis (3-alkylthiophen-2-yl) thiophene [3,2-b ] thiophene (english name is abbreviated to PBTTT), poly (tetrathiophenacetic acid diketopyrrolopyrrole) (english name is abbreviated to PTDPPTFT), polyisoindigo dithiophene (english name is abbreviated to PII 2T), poly (3-hexylthiophene) (english name is abbreviated to P3 HT), poly {2, 5-bis (2-octyl) -3, 6-dithiopyridylthiophene } (english name is abbreviated to N2200), and methyl [6,6] -phenyl-C61-butyrate (english name is abbreviated to PCBM); The thickness of the semiconductor layer may be 1nm to 1mm. In the electronic device electrode, the materi