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CN-122028647-A - Encryption element and method based on molecular spin electronic device

CN122028647ACN 122028647 ACN122028647 ACN 122028647ACN-122028647-A

Abstract

The application relates to the technical field of semiconductor devices, and provides an encryption element and method based on a molecular spin electronic device. The encryption element comprises a spin signal encryption element, wherein the spin signal encryption element is formed by connecting a molecular spin electronic device, an inverter and a multiplexer through conductive wires, the molecular spin electronic device comprises a substrate, a bottom ferromagnetic electrode, an interface layer, a molecular semiconductor middle layer and a top ferromagnetic electrode which are sequentially arranged, the spin signal encryption element inputs a first control signal through the multiplexer to control the application of reverse bias voltage to the molecular spin electronic device so that the spin transport efficiency of the molecular spin electronic device is close to 0, and inputs a second control signal to control the application of forward bias voltage to the molecular spin electronic device to output a spin signal with high signal to noise ratio. The encryption element and the method based on the molecular spin electronic device can realize flexible encryption and decryption switching of spin signals through the multiplexer and the spin electronic device.

Inventors

  • SUN XIANGNAN
  • HU SHUNHUA
  • GUO LIDAN

Assignees

  • 国家纳米科学中心

Dates

Publication Date
20260512
Application Date
20251210

Claims (10)

  1. 1. The encryption element based on the molecular spin electronic device is characterized by comprising a spin signal encryption element, wherein the spin signal encryption element is formed by connecting a molecular spin electronic device, an inverter and a multiplexer through conductive wires, the molecular spin electronic device comprises a substrate, a bottom ferromagnetic electrode, an interface layer, a molecular semiconductor intermediate layer and a top ferromagnetic electrode which are sequentially arranged, and the molecular semiconductor intermediate layer is of a solid structure with asymmetric vertical directions: The spin signal encrypting element inputs a first control signal through the multiplexer to control the application of a reverse bias voltage to the molecular spin electronic device so that the spin transport efficiency of the molecular spin electronic device is close to 0; The spin signal encrypting element inputs a second control signal through the multiplexer to control the application of a forward bias voltage to the molecular spin electronic device, so that the molecular spin electronic device outputs a spin signal with a high signal-to-noise ratio.
  2. 2. The molecular spintronic device-based encryption element of claim 1, further comprising a bimodal spintronic number generator that shares the molecular spintronic device with the spin signal encryption element: the bimodal spin true random number generator causes electrons to randomly pass through a gap between the satellite nano-pillars of the molecular semiconductor intermediate layer and the top ferromagnetic electrode by applying a high bias to the molecular spin electron device, the gap can be regarded as a local tunneling barrier through which electrons randomly pass, and random currents fluctuating in intervals are generated; the bimodal spin true random number generator switches the magnetization directions of the bottom ferromagnetic electrode and the top ferromagnetic electrode through an external magnetic field, and switches the output interval of the random current to generate bimodal spin true random numbers.
  3. 3. The cryptographic element based on molecular spin electronic device according to claim 1 or 2, wherein the molecular semiconductor intermediate layer comprises at least one of fullerene and its derivatives, aluminum octahydroxyquinoline, copper titanium phthalocyanine, the molecular semiconductor intermediate layer being deposited by solution spin coating, knife coating or thermal evaporation process, the deposition thickness being 20-300 nm.
  4. 4. The cryptographic element based on molecular spin electronic device according to claim 1 or 2, wherein the top ferromagnetic electrode is deposited on a polystyrene film by electron beam evaporation and transferred to the surface of the molecular semiconductor intermediate layer, and is subjected to a heat treatment in a vacuum environment so that the top ferromagnetic electrode is brought into close contact with the molecular semiconductor intermediate layer.
  5. 5. The encrypting element based on molecular spintronics device according to claim 1 or 2, characterized in that said bottom ferromagnetic electrode and said top ferromagnetic electrode are each independently selected from at least one of iron, cobalt, nickel, permalloy, said interface layer comprises at least one of alumina, magnesia, lithium fluoride.
  6. 6. The encryption method based on the molecular spin electronic device is characterized by being applied to an encryption element, wherein the encryption element comprises a spin signal encryption element, the spin signal encryption element is formed by connecting a molecular spin electronic device, an inverter and a multiplexer through conductive wires, the molecular spin electronic device comprises a substrate, a bottom ferromagnetic electrode, an interface layer, a molecular semiconductor intermediate layer and a top ferromagnetic electrode which are sequentially arranged, and the molecular semiconductor intermediate layer is of a solid structure with asymmetric vertical directions: Inputting a first control signal through the multiplexer to control the application of a reverse bias voltage to the molecular spin electronic device so that the spin transport efficiency of the molecular spin electronic device is close to 0; And a second control signal is input through the multiplexer so as to control the application of forward bias voltage to the molecular spin electronic device, so that the molecular spin electronic device outputs a spin signal with high signal-to-noise ratio.
  7. 7. The molecular spin electronic device-based encryption method of claim 6, wherein the encryption element further comprises a bimodal spin true random number generator applied to the encryption element, the bimodal spin true random number generator sharing the molecular spin electronic device with the spin signal encryption element, comprising: By applying a high bias to the molecular spintronic device, causing electrons to randomly pass through a gap between the satellite nano-pillars of the molecular semiconductor intermediate layer and the top ferromagnetic electrode, which gap can be considered a local tunneling barrier through which electrons randomly pass, generating a random current that fluctuates in intervals; And switching the magnetization directions of the bottom ferromagnetic electrode and the top ferromagnetic electrode through an external magnetic field, and switching the output interval of the random current to generate the bimodal spin true random number.
  8. 8. An electronic device comprising a processor and a memory storing a computer program, characterized in that the processor implements the steps of the molecular spin electronic device based encryption method of any one of claims 6 to 7 when executing the computer program.
  9. 9. A non-transitory computer readable storage medium having stored thereon a computer program, characterized in that the computer program when executed by a processor implements the steps of the molecular spintronic device-based encryption method of any one of claims 6 to 7.
  10. 10. A computer program product comprising a computer program, characterized in that the computer program when executed by a processor realizes the steps of the molecular spin electronic device based encryption method according to any one of claims 6 to 7.

Description

Encryption element and method based on molecular spin electronic device Technical Field The invention relates to the technical field of semiconductor devices, in particular to an encryption element and method based on a molecular spin electronic device. Background The existing information encryption mode mainly depends on a software encryption technology, and the security is based on the assumption of mathematical algorithm complexity and is not absolute security based on physical intrinsic characteristics. Along with the breakthrough of quantum computing technology, the traditional software encryption algorithm faces the risk of being rapidly cracked, and meanwhile, the dynamic evolution of the attack technology (such as side channel attack and brute force cracking) also enables the anti-attack capability of the software encryption system to be continuously reduced, so that the severe requirement of next-generation information security is difficult to meet. The molecular spin electronic device is taken as one of core devices in the post-molar age, skillfully integrates quantum spin interaction, charge-spin coupling and nanoscale fluctuation characteristics, has the remarkable advantages of low power consumption, high integration level and high stability in the aspects of information storage, transmission and processing, and provides a potential technical platform for constructing a high-performance encryption element. However, the existing molecular spin electronic device still has two main technical bottlenecks, namely low spin transport efficiency, difficulty in outputting spin signals with high signal to noise ratio, inability to meet the effective transmission requirement of encrypted information, insufficient degree of freedom in regulating and controlling the spin transport, and lack of reliable physical mechanism for realizing flexible encryption and decryption switching of the spin signals. Disclosure of Invention The embodiment of the application provides an encryption element and a method based on a molecular spin electronic device, which are used for solving the technical problem that flexible encryption and decryption switching of spin signals cannot be performed. In a first aspect, an embodiment of the present application provides an encryption element based on a molecular spin electronic device, where the encryption element includes a spin signal encryption element, where the spin signal encryption element is formed by connecting a molecular spin electronic device, an inverter, and a multiplexer through a conductive wire, the molecular spin electronic device includes a substrate, a bottom ferromagnetic electrode, an interface layer, a molecular semiconductor intermediate layer, and a top ferromagnetic electrode that are sequentially set, and the molecular semiconductor intermediate layer is a solid structure asymmetric in a vertical direction: The spin signal encryption element inputs a first control signal through the multiplexer so as to control the application of reverse bias voltage to the molecular spin electronic device, so that the spin transport efficiency of the molecular spin electronic device is close to 0; the spin signal encrypting element inputs a second control signal through the multiplexer to control the application of a forward bias voltage to the molecular spin electronic device, so that the molecular spin electronic device outputs a spin signal with a high signal-to-noise ratio. In one embodiment, the encryption element further includes a bimodal spin true random number generator sharing a molecular spintronic device with the spin signal encryption element: The working principle of the dual-mode spin true random number generator is that electrons randomly pass through a gap between a satellite nano column of a molecular semiconductor intermediate layer and a top ferromagnetic electrode by applying high bias voltage to a molecular spin electronic device, the gap can be regarded as a local tunneling barrier, and electrons randomly pass through the barrier to generate random current fluctuating in an interval; The bimodal spin true random number generator switches the magnetization directions of the bottom ferromagnetic electrode and the top ferromagnetic electrode through an external magnetic field, switches the output interval of random current and generates bimodal spin true random numbers. In yet another embodiment, the molecular semiconductor intermediate layer includes at least one of fullerene and its derivative, aluminum octahydroxyquinoline, and copper titanium phthalocyanine, and is formed by solution spin coating, blade coating, or thermal evaporation process, and the deposition thickness is 20-300 nm. In yet another embodiment, the top ferromagnetic electrode is deposited on the polystyrene film by electron beam evaporation, and then transferred to the surface of the molecular semiconductor intermediate layer, and heat treatment is performed in a vacuum environmen