CN-122028648-A - Three-dimensional Hall sensor

CN122028648ACN 122028648 ACN122028648 ACN 122028648ACN-122028648-A

Abstract

The invention provides a three-dimensional Hall sensor which comprises a Hall functional layer parallel to a plane defined by an X axis and a Y axis, a first electrode, a third electrode, a fifth electrode and a seventh electrode which are respectively formed at four corners of the Hall functional layer, a second electrode, a fourth electrode, a sixth electrode and an eighth electrode which are respectively formed at four sides of the Hall functional layer, wherein the second electrode is positioned between the first electrode and the third electrode, the fourth electrode is positioned between the third electrode and the fifth electrode, the sixth electrode is positioned between the fifth electrode and the seventh electrode, the eighth electrode is positioned between the seventh electrode and the first electrode, and a magnetic flux collector is positioned at one side of the Hall functional layer and is spaced a preset distance from the Hall functional layer along a Z axis. Compared with the prior art, the invention can realize three-dimensional magnetic field detection by using the scheme of only one eight-electrode horizontal Hall structure and IMC, and has the advantages of small size, high integration level, simple process and the like compared with the traditional scheme of multiple horizontal Hall structures and IMCs.

Inventors

XIAO GUANGSHUN
HUANG LI
LING FANGZHOU
JIANG LEYUE
CHU LILING
JIN YANGHUA

Assignees

美新半导体（无锡）有限公司
美新半导体(绍兴)有限公司

Dates

Publication Date: 20260512
Application Date: 20260202

Claims (17)

1. A three-dimensional hall sensor, comprising: A Hall function layer parallel to a plane defined by the X axis and the Y axis; first, third, fifth and seventh electrodes formed at four corners of the hall function layer, respectively; Second, fourth, sixth and eighth electrodes respectively formed on four sides of the hall function layer, the second electrode being located between the first and third electrodes; the fourth electrode is positioned between the third electrode and the fifth electrode, the sixth electrode is positioned between the fifth electrode and the seventh electrode, and the eighth electrode is positioned between the seventh electrode and the first electrode; a magnetic flux collector located at one side of the hall function layer and spaced apart from the hall function layer along a Z axis by a predetermined distance L6; Wherein the Z axis, the X axis and the Y axis form a space rectangular coordinate system.
2. The three-dimensional Hall sensor according to claim 1, wherein, The first electrode and the third electrode are arranged at intervals along the Y axis; The fifth electrode and the seventh electrode are arranged at intervals along the Y axis; The first electrode and the seventh electrode are arranged at intervals along the X axis; the third electrode and the fifth electrode are arranged at intervals along the X axis.
3. The three-dimensional Hall sensor according to claim 1, wherein, When the three-dimensional Hall sensor is used for detecting a magnetic field of an X axis, one pair of opposite electrodes of the first electrode, the third electrode, the fifth electrode and the seventh electrode is used as a power electrode, the other opposite pair of electrodes is used as a grounding electrode, the second electrode and the sixth electrode are used as differential output electrode pairs, wherein the first electrode is opposite to the fifth electrode, and the third electrode is opposite to the seventh electrode; When the three-dimensional Hall sensor is used for detecting a magnetic field of a Y axis, one pair of opposite electrodes of the first electrode, the third electrode, the fifth electrode and the seventh electrode is used as a power electrode, the other opposite pair is used as a grounding electrode, the fourth electrode and the eighth electrode are used as differential output electrode pairs, wherein the first electrode is opposite to the fifth electrode, and the third electrode is opposite to the seventh electrode; When the three-dimensional Hall sensor is used for detecting a magnetic field of a Z axis, one pair of opposite electrodes of the first electrode, the third electrode, the fifth electrode and the seventh electrode are used as a power electrode and a grounding electrode, the other opposite pair of electrodes is used as a differential output electrode pair, the first electrode is opposite to the fifth electrode, the third electrode is opposite to the seventh electrode, or when the three-dimensional Hall sensor is used for detecting the magnetic field of the Z axis, the other opposite pair of electrodes of the first electrode, the third electrode, the fifth electrode and the seventh electrode is used as the power electrode, the other opposite pair of electrodes is used as the grounding electrode, wherein the first electrode is opposite to the fifth electrode, the third electrode is opposite to the seventh electrode, the second electrode and the sixth electrode which are connected are used as one differential output electrode in the differential output electrode pair, and the fourth electrode and the eighth electrode which are connected are used as the other differential output electrode in the differential output electrode pair.
4. When detecting the Z-axis magnetic field, the X-axis magnetic field and the Y-axis magnetic field, if the same electrode from the first electrode to the eighth electrode has different purposes, the electrode is controlled to be used for different purposes in different applications by conditioning the switch circuit.
5. The three-dimensional Hall sensor according to claim 1, wherein, It also comprises a non-magnetic conduction isolation layer positioned between the Hall function layer and the magnetic flux collector, The L6 is less than 100 microns; The main structure of the Hall function layer is square.
6. The three-dimensional Hall sensor according to claim 1, wherein, The magnetic flux collector has a structure of a bilateral symmetry pattern and an up-down symmetry pattern; The magnetic flux collector is a soft magnetic material with magnetic conduction/concentration function, The center of the magnetic flux concentrator is aligned with the center of the hall-function layer along the Z-axis.
7. The three-dimensional Hall sensor according to claim 6, wherein, The magnetic flux collector is square, 4 times polygonal or circular; The distance between the edge of the magnetic flux collector and the corresponding edge of the Hall function layer on the plane of X/Y is a preset distance L5; The predetermined distance L5 is related to the dimensions of the first, third, fifth and seventh electrodes.
8. The three-dimensional Hall sensor according to claim 7, wherein, The opposite side distance or diameter of the first electrode, the third electrode, the fifth electrode and the seventh electrode is L2, The L5 is-0.5XL2 < L5< +1.5XL2.
9. The three-dimensional Hall sensor according to claim 1, wherein, The flux concentrator is thin in the middle and thick in the periphery.
10. The three-dimensional Hall sensor according to claim 1, wherein, The Hall functional layer is a functional material for preparing a Hall element; the main structure of the Hall functional layer is a bilateral symmetry pattern and an up-down symmetry pattern; the second electrode, the fourth electrode, the sixth electrode and the eighth electrode are respectively positioned at the centers of four sides of the Hall functional layer.
11. The three-dimensional Hall sensor according to claim 10, wherein, The distance between opposite sides of the main body structure of the Hall functional layer is L1; the opposite side distance or diameter of the first electrode, the third electrode, the fifth electrode and the seventh electrode is L2; the edge distance between two adjacent electrodes in the first electrode, the third electrode, the fifth electrode and the seventh electrode is L3; the lengths of the second electrode, the fourth electrode, the sixth electrode and the eighth electrode are L4; The L4 is 1/5 to 1/3 of the L3; The L2 is 1/5 to 1/4 of the L1.
12. The three-dimensional Hall sensor according to claim 10, wherein, Corresponding areas of the second electrode and the sixth electrode and two sides of the Hall function layer extend a preset distance L7 along the X-axis direction from the main body structure, Corresponding areas of the fourth electrode and the eighth electrode and two side edges of the Hall function layer extend a preset distance L7 along the Y-axis direction from the main body structure.
13. The three-dimensional Hall sensor according to claim 12, wherein, The predetermined distance L7 does not exceed L3/3, And L3 is the edge distance between two adjacent electrodes in the first electrode, the third electrode, the fifth electrode and the seventh electrode.
14. The three-dimensional Hall sensor according to claim 10, wherein, The first electrode, the third electrode, the fifth electrode and the seventh electrode are square, polygonal or circular; The first electrode, the third electrode, the fifth electrode and the seventh electrode are uniform in size.
15. The three-dimensional Hall sensor according to claim 10, wherein, At least a portion of each of the second, fourth, sixth, and eighth electrodes is co-layer with the hall function layer; Each of the first electrode, the third electrode, the fifth electrode and the seventh electrode is positioned on one side surface of the hall function layer.
16. The three-dimensional Hall sensor according to claim 15, wherein, At least part of each of the second electrode, the fourth electrode, the sixth electrode and the eighth electrode covers the surface of the hall function layer but the cover size cannot exceed 10% of L2, And L2 is the opposite side distance or diameter of the first electrode, the third electrode, the fifth electrode and the seventh electrode.
17. The three-dimensional Hall sensor according to claim 1, wherein, The magnetic flux concentrator is arranged to deflect the X/Y axis magnetic field into a Z axis magnetic field; The flux concentrator is configured to concentrate a magnetic field in the Z-axis.

Description

Three-dimensional Hall sensor Technical Field The invention relates to the technical field of magnetic sensors, in particular to a three-dimensional Hall sensor. Background In the field of three-dimensional magnetic field detection, the Hall scheme has the advantages of low cost, large detection range, good compatibility and the like. In order to enable the one-dimensional Hall to have the capability of detecting a three-dimensional magnetic field, a silicon-based CMOS process is generally used for directly preparing a horizontal Hall and a vertical Hall, but the vertical Hall has the problems of low sensitivity, serious offset and the like. Therefore, in order to maintain certain performance advantages of the three-dimensional hall, a mode of matching a plurality of horizontal hall with a magnetic flux collector (IMC) is also used, the IMC can convert a horizontal magnetic field into a vertical magnetic field, and the capability of the horizontal hall for detecting the three-dimensional magnetic field is provided, but the scheme of the plurality of hall has the problems of large size, low integration level, high process complexity and the like. Therefore, a new solution is needed to overcome the above problems. Disclosure of Invention The invention aims to provide a three-dimensional Hall sensor, which can realize three-dimensional magnetic field detection by using a scheme of only one horizontal Hall structure and IMC, and has the advantages of small size, high integration level, simple process and the like compared with the traditional scheme of multiple horizontal Hall structures and IMCs. In order to achieve the object of the present invention, according to one aspect of the present invention, there is provided a three-dimensional hall sensor including a hall function layer parallel to a plane defined by an X axis and a Y axis, first, third, fifth and seventh electrodes formed at four corners of the hall function layer, respectively, second, fourth, sixth and eighth electrodes formed at four sides of the hall function layer, respectively, the second electrode being located between the first and third electrodes, the fourth electrode being located between the third and fifth electrodes, the sixth electrode being located between the fifth and seventh electrodes, the eighth electrode being located between the seventh and first electrodes, a magnetic flux collector being located at one side of the hall function layer and spaced apart from the hall function layer by a predetermined distance L6 along a Z axis, wherein the Z axis and the X axis constitute a space rectangular coordinate system. Compared with the prior art, the three-dimensional magnetic field detection can be realized by using the scheme of only one horizontal Hall structure and IMC, and the method has the advantages of small size, high integration level, simple process and the like compared with the scheme of a plurality of horizontal Hall structures and IMCs. Drawings In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art. Wherein: FIG. 1 is a perspective view of a three-dimensional Hall sensor in one embodiment of the present invention; FIG. 2 is a top view of the three-dimensional Hall sensor of FIG. 1 in one embodiment of the present invention; FIG. 3 is a side view of the three-dimensional Hall sensor of FIG. 1 in one embodiment of the present invention; FIG. 4 is a perspective view of a horizontal Hall structure as shown in FIG. 1 in one embodiment of the present invention; FIG. 5 is a first top view of the horizontal Hall structure of FIG. 1, labeled with a dimensional parameter, in one embodiment of the invention; FIG. 6 is a side view of the horizontal Hall structure of FIG. 1 in one embodiment of the present invention; Fig. 7 is a second top view of the horizontal hall structure of fig. 1, labeled with electrode numbers, in one embodiment of the invention. FIG. 8 is a schematic diagram of the current flow path inside the horizontal Hall structure when the three-dimensional Hall sensor shown in FIG. 1 is used for XYZ magnetic field test by adopting the upper surface electrode connection mode in one embodiment of the invention; FIG. 9 is a schematic longitudinal cross-sectional view of the magnetic field distribution of the three-dimensional Hall sensor of FIG. 1 given an X magnetic field in one embodiment of the present invention; FIG. 10 is a schematic diagram of BZ magnetic induction distribution of the three-dimensional Hall sensor shown in FIG. 1 acting on the Hall function layer given an X magnetic field in one embodiment of the present inventio