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CN-122028653-A - Ag nanoparticle-based MoS modification2/HfO2Dual-structure memristor and preparation method thereof

CN122028653ACN 122028653 ACN122028653 ACN 122028653ACN-122028653-A

Abstract

The invention relates to the field of semiconductor devices and nerve morphology calculation, in particular to a double-structure memristor based on Ag nano particle modified MoS 2 /HfO 2 and a preparation method thereof. The preparation process comprises the steps of sequentially depositing a Pt bottom electrode and an HfO 2 resistance change layer on a substrate, forming an Ag nano-particle layer through thermal evaporation and annealing, then transferring a MoS 2 film, and finally preparing the Au/Ag top electrode. The device can realize 19ns rapid response and 283-order conductivity state regulation under a vertical structure, and shows wide spectrum light response capacity by means of the local surface plasmon resonance effect of Ag nano particles in a planar structure. The intelligent sensing device has the characteristics of ultra-low power consumption, high on-off ratio and multi-wavelength light sensing, can simulate various nerve synapse behaviors and light pulse learning functions, is suitable for the fields of brain-like calculation, intelligent robots, multi-mode artificial intelligent systems and the like, and effectively realizes the integration of sensing and calculation.

Inventors

  • Song Xingjuan
  • LI ZIYUE
  • YOU JING
  • XU JINXIA
  • LONG YUTING

Assignees

  • 湖北工业大学

Dates

Publication Date
20260512
Application Date
20260126

Claims (10)

  1. 1. The preparation method of the double-structure memristor based on Ag nanoparticle modified MoS 2 /HfO 2 is characterized by comprising the following steps: s1, providing a substrate, depositing a bottom electrode on the substrate; S2, depositing an HfO 2 resistance variable layer on the bottom electrode; s3, depositing an Ag nano particle layer on the HfO 2 resistance variable layer; S4, transferring the MoS 2 film to the Ag nano particle layer; S5, preparing a top electrode on the MoS 2 film.
  2. 2. The method of claim 1, wherein the Ag nanoparticles have a size of 15-35 nm.
  3. 3. The method of claim 1, wherein the HfO 2 resistive switching layer has a thickness of 3-8 nm.
  4. 4. The method according to claim 1, wherein the method for depositing the Ag nanoparticle layer in step S3 comprises thermally evaporating the Ag nano-film on the HfO 2 resistive switching layer, and then annealing the Ag nano-film in an inert atmosphere to obtain the Ag nanoparticle layer.
  5. 5. The preparation method of claim 4, wherein the thickness of the Ag nano-film is 3-7 nm.
  6. 6. The method according to claim 4, wherein the annealing temperature is 200-350 ℃ and the annealing time is 15-40 min.
  7. 7. The method of claim 1, wherein the MoS 2 film has a thickness of 2-10 nm.
  8. 8. The method of manufacturing as claimed in claim 1, wherein the top electrode comprises an Au/Ag composite electrode and the bottom electrode comprises a Pt electrode.
  9. 9. The dual-structure memristor based on Ag nanoparticle modified MoS 2 /HfO 2 obtained by the preparation method of any one of claims 1-8.
  10. 10. The use of the Ag nanoparticle modified MoS 2 /HfO 2 -based dual-structure memristor of claim 9 in brain-like computing, intelligent robotics, multi-modal artificial intelligence systems, or visual information processing systems.

Description

Double-structure memristor based on Ag nanoparticle modified MoS 2/HfO2 and preparation method thereof Technical Field The invention relates to the field of semiconductor devices and nerve morphology calculation, in particular to a double-structure memristor based on Ag nano particle modified MoS 2/HfO2 and a preparation method thereof. Background With the rapid growth of the demand for computing power in the artificial intelligence era, the storage and computing separation modes of the traditional von neumann architecture face serious power consumption and efficiency bottlenecks. Neuromorphic devices have emerged as new hardware with both memory and computing functions. More specifically, memristor-based neuromorphic devices exhibit excellent performance, including ultra-low power consumption, high switching ratios, and multi-level conductance regulation capability. However, the traditional memristor has the problems of single structure function, insufficient photoelectric response and the like, and the wide application of the traditional memristor in a multi-mode intelligent system is limited. The resistance switching mechanism of the memristor is realized through the formation and fracture of the conductive filaments, but the randomness of the formation of the conductive filaments and a single electrical response mode are difficult to meet the requirement of complex environment perception. For conventional devices, this limitation is mainly reflected in the inability to achieve multiple modes of operation and multi-mode signal processing simultaneously. Thus, the lack of randomness and optical response of conventional memristor conductive filaments limits the application of the device in complex smart systems. Disclosure of Invention In view of the above, the invention provides a double-structure memristor based on Ag nano-particle modified MoS 2/HfO2 and a preparation method thereof, so that a single device can realize double-structure functions, and the Ag nano-particles enhance photoelectric response and conductive filament formation. The technical scheme of the invention is realized as follows: In a first aspect, the invention provides a preparation method of a double-structure memristor based on Ag nanoparticle modified MoS 2/HfO2, which comprises the following steps: s1, providing a substrate, depositing a bottom electrode on the substrate; S2, depositing an HfO 2 resistance variable layer on the bottom electrode; s3, depositing an Ag nano particle layer on the HfO 2 resistance variable layer; S4, transferring the MoS 2 film to the Ag nano particle layer; S5, preparing a top electrode on the MoS 2 film. Based on the scheme, the size of the Ag nano particles is preferably 15-35 nm. Specifically, the size of the Ag nano particles is preferably 10-35 nm, the local electric field enhancement is stronger when the size is too small, the nucleation of the conductive filaments is facilitated, but the conductive filaments are finer due to small Ag reserves, and the large Ag is sufficient in supply and easy to generate thick filaments, so that the resetting is difficult and the energy consumption is high. Based on the scheme, preferably, the thickness of the HfO 2 resistance variable layer is 3-8 nm. Specifically, the thickness of the HfO 2 resistance-changing layer is preferably 3-8 nm, the starting voltage can be reduced when the thickness is too thin, electric leakage is easy to generate, resistance fluctuation is aggravated, the addition wire/reset voltage can be remarkably increased when the thickness is too thick, and the filament formation failure probability is increased. Based on the above scheme, preferably, the method for depositing the Ag nano particle layer in the step S3 comprises the steps of thermally evaporating the Ag nano film on the HfO 2 resistance variable layer, and then annealing the Ag nano film in an inert atmosphere to obtain the Ag nano particle layer. Based on the above scheme, preferably, the thickness of the Ag nano-film is 5nm. Specifically, the rapid annealing is mainly used for nucleating, growing and converting the ultrathin Ag continuous film obtained by thermal evaporation into Ag nano particles with controllable size and adjustable distribution after being heated. Based on the scheme, the annealing temperature is preferably 200-350 ℃, and the annealing time is preferably 15-40 min. The annealing time is more than 15min because the Ag film needs sufficient time for surface diffusion and aggregation to form uniform nanoparticles, and less than 40min because excessive aggregation of Ag nanoparticles is avoided and particle size uniformity is destroyed. Specifically, the annealing temperature and time affect the average particle size of the Ag nanoparticles, so that the annealing temperature is preferably 200-350 ℃, and the particles are not fully formed at low temperature, and the size distribution is widened at high temperature and are oversized. Based on the above scheme,