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CN-122028657-A - LaNiO based on monoethanolamine regulation and control3Preparation method and application of film

CN122028657ACN 122028657 ACN122028657 ACN 122028657ACN-122028657-A

Abstract

The invention relates to the technical field of functional oxide film materials, in particular to a preparation method and application of a LaNiO 3 film based on monoethanolamine regulation, and the preparation method comprises the following steps of S1, dissolving a lanthanum source and a nickel source in an organic solvent to prepare LaNiO 3 precursor solution, and S2, adding monoethanolamine into the precursor solution as a stabilizer, wherein the mol ratio of the monoethanolamine to LaNiO 3 is 0.50-1.50. According to the invention, the monoethanolamine modified precursor is added in the chemical solution deposition process, and the temperature and time of the rapid thermal annealing process are controlled, so that the cooperative optimization of film orientation, thickness and conductivity is realized, a high-c-axis orientation, large-thickness and low-resistivity LaNiO 3 film can be prepared on a silicon substrate, the produced film can be used as a bottom electrode to induce the preferential orientation growth of functional layers such as BiFeO 3 and the like, and the film exhibits strong ferroelectric property, is suitable for silicon-based integrated devices, and has the characteristics of low cost, simple process and excellent performance.

Inventors

  • Yu Changsuo
  • WANG PING

Assignees

  • 铜陵职业技术学院

Dates

Publication Date
20260512
Application Date
20260209

Claims (9)

  1. 1. The preparation method of the LaNiO 3 film based on monoethanolamine regulation is characterized by comprising the following steps: S1, dissolving a lanthanum source and a nickel source in an organic solvent to prepare a LaNiO 3 precursor solution; S2, adding monoethanolamine into the precursor solution as a stabilizer, wherein the molar ratio of the monoethanolamine to the LaNiO 3 is 0.50-1.50; s3, spin-coating the precursor solution on a silicon substrate to prepare a LaNiO 3 wet film; S4, baking, pyrolyzing and annealing the LaNiO 3 wet film to form a crystallized LaNiO 3 film; S5, repeating the steps S3-S4 for a plurality of times until the film thickness is more than or equal to 300nm; Wherein the baking temperature of S4 is 145-160 ℃, the pyrolysis temperature is 390-420 ℃, the annealing temperature is 700-720 ℃, and the baking, pyrolysis and annealing time is 10-12min.
  2. 2. The preparation method of the LaNiO 3 film based on monoethanolamine regulation of claim 1, wherein the molar ratio of monoethanolamine to LaNiO 3 in S2 is 1.00.
  3. 3. The preparation method of the LaNiO 3 film based on monoethanolamine regulation of claim 1, wherein in S1, the lanthanum source is lanthanum nitrate, the nickel source is nickel acetate, and the organic solvent is 2-methoxyethanol.
  4. 4. The preparation method of the LaNiO 3 film based on monoethanolamine regulation of claim 1, wherein the concentration of the LaNiO 3 precursor solution in S1 is 0.3mol/L.
  5. 5. The method for preparing the LaNiO 3 film based on monoethanolamine regulation of claim 1, wherein the step of mixing monoethanolamine with LaNiO 3 precursor solution in S2 further comprises the step of stirring the mixture for 5-6H and then standing for 8-14H.
  6. 6. The preparation method of the LaNiO 3 film based on monoethanolamine regulation of claim 1, wherein before spin coating, the silicon substrate is ultrasonically cleaned by acetone, ethanol and deionized water, the spin coating speed in the S3 is 4800-5200rpm, and the spin coating time is 13-18S.
  7. 7. The preparation method of the LaNiO 3 film based on monoethanolamine regulation of claim 1, wherein the S5 silicon substrate is annealed at 700-720 ℃ for 30-35min after spin coating, baking, pyrolysis and annealing are repeated 6 times.
  8. 8. The preparation method of the LaNiO 3 film based on monoethanolamine regulation according to any one of claims 1 to 8, wherein the orientation degree (00 l) of the LaNiO 3 film prepared by the method is more than or equal to 98%, the thickness is more than or equal to 340nm, and the room temperature resistivity is less than or equal to 0.7mΩ cm.
  9. 9. The application of the LaNiO 3 film prepared by the preparation method of the LaNiO 3 film based on monoethanolamine regulation according to any one of claims 1-8 in a silicon-based compatible functional device.

Description

Preparation method and application of LaNiO 3 film based on monoethanolamine regulation and control Technical Field The invention relates to the technical field of functional oxide film materials, in particular to a preparation method and application of a LaNiO 3 film based on monoethanolamine regulation. Background LaNiO 3, which is a conductive oxide having a pseudo-cubic perovskite structure, is widely considered as an ideal electrode material for functional devices due to its good crystallization compatibility, high-temperature chemical stability and strong adhesion to silicon substrates. Two modes are often adopted for preparing the LaNiO 3 film, namely a high-temperature solid-phase reaction method and chemical solution deposition. In chemical solution deposition technology, in order to prevent La3 + and Ni3 + from generating hydroxide precipitation by hydrolysis in water or alcohol, complexing agents must be added to maintain stability, and existing common stabilizers include monoethanolamine, acetylacetone, acetic acid and the like. However, when the (00 l) preferred orientation of the LaNiO 3 film is prepared by using a chemical solution deposition technology, the orientation, the film thickness after single coating and the room temperature resistivity of the LaNiO 3 film are synergistically influenced after the stabilizer is added by depending on a rapid thermal annealing process, and particularly, the metering of the stabilizer and the temperature and time control of the rapid thermal annealing process can jointly influence the LaNiO 3 film. Therefore, developing a method for realizing the cooperative optimization of orientation, thickness and conductivity of the LaNiO 3 film by regulating and controlling the precursor composition has important significance for promoting the integration of silicon-based functional devices. Disclosure of Invention The invention aims to provide a preparation method and application of a LaNiO 3 film based on monoethanolamine regulation, and the preparation method and application of a LaNiO 3 film based on monoethanolamine regulation solve the problems in the background art. In order to achieve the above purpose, the present invention provides the following technical solutions: A preparation method of a LaNiO 3 film based on monoethanolamine regulation comprises the following steps: S1, dissolving a lanthanum source and a nickel source in an organic solvent to prepare a LaNiO 3 precursor solution; S2, adding monoethanolamine into the precursor solution as a stabilizer, wherein the molar ratio of the monoethanolamine to the LaNiO 3 is 0.50-1.50; s3, spin-coating the precursor solution on a silicon substrate to prepare a LaNiO 3 wet film; S4, baking, pyrolyzing and annealing the LaNiO 3 wet film to form a crystallized LaNiO 3 film; S5, repeating the steps S3-S4 for a plurality of times until the film thickness is more than or equal to 300nm; Wherein the baking temperature of S4 is 145-160 ℃, the pyrolysis temperature is 390-420 ℃, the annealing temperature is 700-720 ℃, and the baking, pyrolysis and annealing time is 10-12min. Preferably, the molar ratio of monoethanolamine to LaNiO 3 in S2 is 1.00. Preferably, in S1, the lanthanum source is lanthanum nitrate, the nickel source is nickel acetate, and the organic solvent is 2-methoxyethanol. Preferably, the concentration of the LaNiO 3 precursor solution in S1 is 0.3mol/L. Preferably, the step of mixing the monoethanolamine with the LaNiO 3 precursor solution in the step S2 further comprises the step of stirring the mixed solution for 5-6H and then standing for 8-14H. Preferably, before spin coating, the silicon substrate is ultrasonically cleaned by acetone, ethanol and deionized water, the spin coating speed in the S3 is 4800-5200rpm, and the spin coating time is 13-18S. Preferably, the silicon substrate in the step S5 is annealed at 700-720 ℃ for 30-35min after being repeatedly spin-coated, baked, pyrolyzed and annealed for 6 times. Preferably, the (00 l) orientation degree of the LaNiO 3 film prepared by the method is more than or equal to 98%, the thickness is more than or equal to 340nm, and the room temperature resistivity is less than or equal to 0.7mΩ & cm. The invention also provides an application of the LaNiO 3 film prepared by the preparation method of the LaNiO 3 film based on monoethanolamine regulation in the silicon-based compatible functional device By means of the technical scheme, the preparation method of the LaNiO 3 film based on monoethanolamine regulation has the following beneficial effects: According to the invention, the monoethanolamine modified precursor is controlled and added in the chemical solution deposition process, and the temperature and time of the rapid thermal annealing process are controlled, so that the cooperative optimization of film orientation, thickness and conductivity is realized, a LaNiO 3 film with high c-axis orientation, large thickness and low resistivity can be prep