CN-122028662-A - Substrate processing method

Abstract

The application discloses a substrate processing method, which relates to the technical field of semiconductor manufacturing, and comprises the steps of providing a substrate with a protruding part and a groove, wherein the surface of the protruding part is provided with a first oxide layer; the method comprises the steps of etching a substrate by a wet method, removing the first oxide layer, forming a second oxide layer on the substrate, wherein the thickness of the second oxide layer is smaller than that of the first oxide layer, cleaning the substrate, and drying the substrate. The method has the advantages that the first oxide layer is removed, the second oxide layer is regenerated, the etching difficulty of the first oxide layer is greatly reduced, the method can be realized by improving the etching time, the strict requirement on etching parameters is overcome, and in addition, compared with the pure etching treatment, the thickness of the second oxide layer can be accurately controlled by regenerating the second oxide layer.

Inventors

• ZHOU SHIHAO
• ZHANG XIAOYAN

Assignees

• 盛美半导体设备(上海)股份有限公司

Dates

Publication Date

20260512

Application Date

20241101

Claims (9)

1. 1. A substrate processing method, comprising: providing a substrate with a protruding part and a groove, wherein the surface of the protruding part is provided with a first oxide layer; Wet etching the substrate and removing the first oxide layer; Forming a second oxide layer on the substrate, wherein the thickness of the second oxide layer is smaller than that of the first oxide layer; Cleaning the substrate; and drying the substrate.
2. 2. The substrate processing method according to claim 1, wherein the drying the substrate comprises: Performing hydrophobic treatment on the substrate; Drying the substrate.
3. 3. The substrate processing method according to claim 2, wherein the performing hydrophobic treatment on the substrate comprises: replacing the moisture on the substrate with a dry medical fluid; replacing the dry medical solution on the substrate with a hydrophobic agent; The hydrophobizing agent on the substrate is replaced with a dry chemical solution.
4. 4. A substrate processing method according to any one of claims 1 to 3, wherein in said steps of cleaning said substrate and drying said substrate, said substrate is kept in a rotated state, and a rotation speed of said substrate is reduced when a processing liquid is replaced.
5. 5. The substrate processing method according to claim 1, wherein a thickness of the second oxide layer is 1nm or less.
6. 6. The substrate processing method according to claim 1, wherein the processing liquid used for the wet etching is HF.
7. 7. The method according to claim 1, wherein the processing liquid used for forming the second oxide layer on the substrate is any one of O 3 、H 2 O 2 and SPM.
8. 8. The substrate processing method of claim 1, wherein the second oxide layer is silicon dioxide.
9. 9. The substrate processing method of claim 1, wherein the boss further comprises a barrier layer, the first oxide layer or the second oxide layer being disposed on the barrier layer.

Description

Substrate processing method Technical Field The application relates to the technical field of semiconductor manufacturing, in particular to a substrate processing method. Background In the semiconductor manufacturing process, as the integration level of devices increases, more and more substrates have high aspect ratio structures. In the drying process, the device is easily influenced by capillary force, so that collapse or adhesion of the high-aspect-ratio structure occurs, and the performance and reliability of the device are seriously influenced. During the drying step, capillary forces result from the action of surface tension forces in the liquid in the microscopic gaps, resulting in collapse or sticking of the high aspect ratio structure. To solve this problem, the prior art generally reduces the influence of capillary forces by optimizing the drying process or surface treatment technique. In the preparation process of the high-aspect-ratio structure of the substrate, a thicker oxide layer exists on the surface of the substrate, the substrate needs to be dried immediately in the wet removal process, and the existing treatment method is that part of the oxide layer is reserved specially in the process of removing the oxide layer by using hydrofluoric acid, so that the risk of collapse or adhesion of the high-aspect-ratio structure in the drying process is reduced in the subsequent drying process. However, the concentration and time of the hydrofluoric acid etching are strictly required, and the insufficient or excessive etching of the oxide layer can be caused by a little carelessness, so that the effect of the drying process is influenced. Disclosure of Invention In order to solve the technical problems, the application provides a substrate processing method. The application solves the technical problems by the following technical scheme: A substrate processing method, comprising: providing a substrate with a protruding part and a groove, wherein the surface of the protruding part is provided with a first oxide layer; Wet etching the substrate and removing the first oxide layer; Forming a second oxide layer on the substrate, wherein the thickness of the second oxide layer is smaller than that of the first oxide layer; Cleaning the substrate; and drying the substrate. The method has the positive progress effects that the method is used for removing the first oxide layer and regenerating the second oxide layer, compared with the method for removing the oxide layer by strictly controlling the etching concentration and the etching time, the etching difficulty of removing the first oxide layer is greatly reduced, and the strict requirement on etching parameters is overcome. In addition, compared with the simple etching treatment, the thickness of the second oxide layer can be accurately controlled by regenerating the second oxide layer. Drawings FIG. 1 is a flow chart of a substrate processing method according to an embodiment of the application; FIG. 2 is a diagram of step S100 of a substrate processing method according to an embodiment of the application; FIG. 3 is a diagram illustrating a step S200 of a substrate processing method according to an embodiment of the application; fig. 4 is a schematic diagram of step S300 of a substrate processing method according to an embodiment of the application. Detailed Description The application is further illustrated by means of examples which follow, without thereby restricting the application to the scope of the examples. As shown in fig. 1, the present application provides a substrate processing method, which, as shown in fig. 1, 2 and 4, includes: S100, providing a substrate with a protruding part 620 and a groove 640, wherein the surface of the protruding part 620 is provided with a first oxide layer 630; S200, etching the substrate by a wet method, and removing the first oxide layer 630; s300, forming a second oxide layer 650 on the substrate, wherein the thickness of the second oxide layer 650 is smaller than that of the first oxide layer 630; S400, cleaning the substrate; s500, drying the substrate. The method reduces the strict requirements on wet etching processing parameters. The conventional solution requires strict control of the etching concentration and time of the etching solution when removing the first oxide layer 630, otherwise, the first oxide layer 630 may be excessively or insufficiently etched, which may further affect the subsequent processes, such as collapse or adhesion of the trench of the substrate during the drying process. Compared with the method of strictly controlling the etching concentration and etching time to reserve part of the first oxide layer 630, the method does not need to reserve part of the first oxide layer, and the etching difficulty of completely removing the first oxide layer 630 is greatly reduced, for example, the method can be realized by improving the etching time, and the strict requirement on etching parameter