CN-122028663-A - Semiconductor device, manufacturing method, chip and electronic equipment

CN122028663ACN 122028663 ACN122028663 ACN 122028663ACN-122028663-A

Abstract

The application provides a semiconductor device, a preparation method, a chip and electronic equipment. The method comprises the steps of providing a substrate, performing an epitaxial process to form an epitaxial material layer on the substrate, performing a chemical mechanical polishing process to polish the epitaxial material layer and planarize the top surface of the epitaxial material layer to form sub-epitaxial layers, wherein the chemical mechanical polishing process at least comprises a first chemical mechanical polishing process and a second chemical mechanical polishing process, polishing parameters of the first chemical mechanical polishing process and polishing parameters of the second chemical mechanical polishing process are different, and performing the epitaxial process and the chemical mechanical polishing process at least once repeatedly to form at least two sub-epitaxial layers on the substrate, wherein the at least two sub-epitaxial layers form an epitaxial layer with a preset thickness. The application can balance the requirements of surface defect removal and thickness uniformity.

Inventors

LIANG DONG
LI PENG

Assignees

芯联动力科技(绍兴)有限公司

Dates

Publication Date: 20260512
Application Date: 20260415

Claims (10)

1. A method of manufacturing a semiconductor device, comprising: Providing a substrate; Performing an epitaxial process to form an epitaxial material layer on the substrate; Performing a chemical mechanical polishing process to polish the epitaxial material layer and planarize the top surface of the epitaxial material layer to form a sub-epitaxial layer, wherein the chemical mechanical polishing process at least comprises a first chemical mechanical polishing process and a second chemical mechanical polishing process, and the polishing parameters of the first chemical mechanical polishing process and the polishing parameters of the second chemical mechanical polishing process are different; And repeating the epitaxial process and the chemical mechanical polishing process at least once to form at least two sub-epitaxial layers on the substrate, wherein the at least two sub-epitaxial layers form an epitaxial layer with a preset thickness.
2. The method of manufacturing a semiconductor device according to claim 1, wherein the step of performing a chemical mechanical polishing process to polish the epitaxial material layer comprises: performing a first chemical mechanical polishing process to polish the epitaxial material layer with a first thickness; performing a second chemical mechanical polishing process to polish the epitaxial material layer to a second thickness, wherein the second thickness is smaller than the first thickness; wherein the polishing pressure of the first chemical mechanical polishing process is greater than the pressure of the second chemical mechanical polishing process, and/or the rotation speed difference of the first chemical mechanical polishing process is greater than the rotation speed difference of the second chemical mechanical polishing process.
3. The method of manufacturing a semiconductor device according to claim 2, wherein after the step of performing a second chemical mechanical polishing process to polish the epitaxial material layer of the second thickness, further comprising: and performing a third chemical mechanical polishing process to polish the epitaxial material layer to form a sub-epitaxial layer, wherein the polishing pressure of the third chemical mechanical polishing process is smaller than that of the second chemical mechanical polishing process, and the rotation speed difference of the third chemical mechanical polishing process is smaller than that of the second chemical mechanical polishing process.
4. The method of manufacturing a semiconductor device according to claim 3, wherein a ratio of a rotational speed difference of the third chemical mechanical polishing process to a rotational speed difference of the second chemical mechanical polishing process is greater than 10:1, and/or a polishing time of the third chemical mechanical polishing process is 50s-70s.
5. The method of manufacturing a semiconductor device according to any one of claims 1 to 4, wherein the step of performing an epitaxial process to form an epitaxial material layer on the substrate comprises: under the preset condition, introducing a silicon source and a carbon source into the epitaxial reaction cavity to form an epitaxial precursor layer; And performing a multi-stage doping process to dope the epitaxial precursor layer to form the epitaxial material layer, wherein the doping concentration in the epitaxial material layer is distributed in a gradient manner, and the doping concentration is gradually increased along the direction deviating from the substrate.
6. The method of manufacturing a semiconductor device according to claim 5, wherein the step of performing a multi-stage doping process comprises: Introducing a doping source into the epitaxial reaction cavity at a first flow rate to form a first sub-epitaxial material layer; Introducing a doping source into the epitaxial reaction cavity at a second flow rate so as to form a second sub-epitaxial material layer, wherein the second flow rate is larger than the first flow rate; Introducing a doping source into the epitaxial reaction cavity at a third flow rate so as to form a third sub-epitaxial material layer, wherein the third flow rate is larger than the second flow rate; The first sub-epitaxial material layer, the second sub-epitaxial material layer, and the third sub-epitaxial material layer constitute the epitaxial material layer.
7. The method of manufacturing a semiconductor device according to claim 6, wherein a doping concentration of the first sub-epitaxial material layer is 5 x10 14 cm -3 ～1×10 15 cm -3 , a doping concentration of the second sub-epitaxial material layer is 5 x10 15 cm -3 ～1×10 16 cm -3 , and a doping concentration of the third sub-epitaxial material layer is 5 x10 16 cm -3 ～1×10 17 cm -3 .
8. A semiconductor device, characterized in that the semiconductor device is produced by the production method of the semiconductor device according to any one of claims 1 to 7, comprising: A substrate; The epitaxial layer is arranged on the substrate and comprises at least two sub-epitaxial layers, wherein the thickness uniformity of the epitaxial layer is less than or equal to 0.9%, and the roughness of the epitaxial layer is less than or equal to 0.15nm.
9. A chip comprising the semiconductor device of claim 8.
10. An electronic device comprising the chip of claim 9.

Description

Semiconductor device, manufacturing method, chip and electronic equipment Technical Field The embodiment of the application relates to the technical field of semiconductors, in particular to a semiconductor device, a preparation method, a chip and electronic equipment. Background Semiconductor silicon carbide (SiC) is widely used in the fields of new energy automobile power modules, intelligent power network high-voltage devices, 5G communication radio frequency chips and the like, which have extremely high requirements on high voltage resistance, low conduction loss and high temperature stability, due to its excellent material characteristics. In the process of semiconductor device, the thickness uniformity, doping concentration gradient precision and surface defect density of the epitaxial layer directly determine the electrical performance and reliability of the device. But currently a combination of Epitaxial Processes (EPI) and Chemical Mechanical Polishing (CMP) processes are commonly used to form the epitaxial layers. However, the chemical mechanical polishing process described above has difficulty in balancing the removal of surface defects and the requirement for thickness uniformity. Disclosure of Invention In view of the above, embodiments of the present application provide a semiconductor device, a method for manufacturing the same, a chip, and an electronic apparatus, which can balance the requirements of removal of surface defects and thickness uniformity. In order to achieve the above object, the embodiment of the present application provides the following technical solutions: A first aspect of an embodiment of the present application provides a method for manufacturing a semiconductor device, including: Providing a substrate; Performing an epitaxial process to form an epitaxial material layer on the substrate; Performing a chemical mechanical polishing process to polish the epitaxial material layer and planarize the top surface of the epitaxial material layer to form a sub-epitaxial layer, wherein the chemical mechanical polishing process at least comprises a first chemical mechanical polishing process and a second chemical mechanical polishing process, and the polishing parameters of the first chemical mechanical polishing process and the polishing parameters of the second chemical mechanical polishing process are different; And repeating the epitaxial process and the chemical mechanical polishing process at least once to form at least two sub-epitaxial layers on the substrate, wherein the at least two sub-epitaxial layers form an epitaxial layer with a preset thickness. In one possible implementation, the step of performing a chemical mechanical polishing process to polish the epitaxial material layer includes: performing a first chemical mechanical polishing process to polish the epitaxial material layer with a first thickness; performing a second chemical mechanical polishing process to polish the epitaxial material layer to a second thickness, wherein the second thickness is smaller than the first thickness; wherein the polishing pressure of the first chemical mechanical polishing process is greater than the pressure of the second chemical mechanical polishing process, and/or the rotation speed difference of the first chemical mechanical polishing process is greater than the rotation speed difference of the second chemical mechanical polishing process. In one possible implementation manner, after the step of performing the second chemical mechanical polishing process to polish the epitaxial material layer with the second thickness, the method further includes: and performing a third chemical mechanical polishing process to polish the epitaxial material layer to form a sub-epitaxial layer, wherein the polishing pressure of the third chemical mechanical polishing process is smaller than that of the second chemical mechanical polishing process, and the rotation speed difference of the third chemical mechanical polishing process is smaller than that of the second chemical mechanical polishing process. In one possible implementation, the ratio of the difference in rotational speed of the third chemical mechanical polishing process to the difference in rotational speed of the second chemical mechanical polishing process is greater than 10:1, and/or the polishing time of the third chemical mechanical polishing process is 50s-70s. In one possible implementation manner, the step of performing an epitaxial process to form an epitaxial material layer on the substrate includes: Under preset conditions, introducing a silicon source and a carbon source into the epitaxial reaction cavity to form an epitaxial precursor layer; And performing a multi-stage doping process to dope the epitaxial precursor layer to form the epitaxial material layer, wherein the doping concentration in the epitaxial material layer is distributed in a gradient manner, and the doping concentration is gradually increased along t