CN-122028665-A - Method for manufacturing semiconductor device and semiconductor device

Abstract

The invention provides a method for manufacturing a semiconductor device and a semiconductor device, which can be more appropriately singulated. The method for manufacturing a semiconductor device according to the present embodiment includes forming a 1 st groove and a 2 nd groove in a 1 st surface of a semiconductor wafer, the 1 st groove and the 2 nd groove extending along a dicing area of the semiconductor wafer having the 1 st surface and the 2 nd surface on the opposite side of the 1 st surface and being arranged side by side. The method includes the step of irradiating a 1 st laser beam from the 2 nd surface side of the semiconductor wafer to a position between the 1 st groove and the 2 nd groove when viewed from above, thereby forming a modified portion in the semiconductor wafer along the dicing area. The method includes the step of dicing the semiconductor wafer into a plurality of semiconductor chips by cleaving the semiconductor wafer.

Inventors

• YAMADA RYOJI

Assignees

• 铠侠股份有限公司

Dates

Publication Date

20260512

Application Date

20250827

Priority Date

20241101

Claims (17)

1. 1. A method for manufacturing a semiconductor device includes the steps of: forming a1 st groove and a2 nd groove in a1 st surface of a semiconductor wafer, wherein the 1 st groove and the 2 nd groove extend along a cutting area of the semiconductor wafer with the 1 st surface and the 2 nd surface positioned on the opposite side of the 1 st surface and are arranged side by side; irradiating the semiconductor wafer with a1 st laser beam from the 2 nd side of the semiconductor wafer between the 1 st groove and the 2 nd groove when viewed from above to form a modified portion in the semiconductor wafer along the dicing area, and The semiconductor wafer is singulated into a plurality of semiconductor chips by cleaving the semiconductor wafer.
2. 2. The method of manufacturing a semiconductor device according to claim 1, wherein cleaving the semiconductor wafer comprises: Cleaving the semiconductor wafer with the modified portion as a starting point.
3. 3. The method of manufacturing a semiconductor device according to claim 1, wherein the step of forming the 1 st and 2 nd grooves includes forming regions generating compressive stress and crystal defects corresponding to the 1 st and 2 nd grooves, respectively.
4. 4. The method of manufacturing a semiconductor device according to claim 1, wherein a3 rd groove extending along the dicing area is formed on the 1 st surface of the semiconductor wafer, The 3 rd slot is located between the 1 st slot and the 2 nd slot.
5. 5. The method for manufacturing a semiconductor device according to claim 1, wherein a width of a portion formed between the 1 st groove and the 2 nd groove is smaller than a width of the 1 st groove.
6. 6. The method for manufacturing a semiconductor device according to claim 1, wherein a width of a portion formed between the 1 st groove and the 2 nd groove is larger than a width of the 1 st groove.
7. 7. The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor wafer has: A semiconductor substrate including the 2 nd side, and A film including the 1 st plane and a semiconductor element; The 1 st groove and the 2 nd groove are formed to penetrate the film from the 1 st surface side to reach a depth of the semiconductor substrate.
8. 8. The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor wafer has: A semiconductor substrate including the 2 nd side, and A film including the 1 st plane and a semiconductor element; the 1 st groove and the 2 nd groove are formed to a depth from the 1 st surface side not reaching the semiconductor substrate.
9. 9. The method for manufacturing a semiconductor device according to claim 7 or 8, wherein a thickness of the film is 5 μm or more and less than 10 μm.
10. 10. The method for manufacturing a semiconductor device according to any one of claims 1 to 8, wherein the 1 st groove and the 2 nd groove are formed by laser ablation with a2 nd laser.
11. 11. The method for manufacturing a semiconductor device according to claim 10, wherein a wavelength of the 1 st laser is 1000nm to 1400nm, The wavelength of the 2 nd laser is 600nm or less and the pulse width is 10nm or less.
12. 12. A semiconductor device having a1 st surface and a2 nd surface opposite to the 1 st surface, The semiconductor device further includes: a semiconductor element provided in a central portion of the semiconductor device as viewed from a direction perpendicular to the 1 st plane; At least 2 grooves extending along an outer peripheral end portion of the semiconductor device in at least a part of the outer peripheral end portion as viewed from a direction perpendicular to the 1 st plane, and And a modifying portion formed on a side surface of the semiconductor device.
13. 13. The semiconductor device according to claim 12, comprising regions generating compressive stress and crystal defects corresponding to the at least 2 grooves, respectively.
14. 14. The semiconductor device according to claim 12, wherein the semiconductor device has: A semiconductor substrate including the 2 nd side, and A film including the 1 st plane and a semiconductor element; the depth of the at least 2 trenches does not reach the semiconductor substrate.
15. 15. The semiconductor device according to claim 12, wherein the semiconductor device has: A semiconductor substrate including the 2 nd side, and A film including the 1 st plane and a semiconductor element; the depth of the at least 2 trenches reaches the semiconductor substrate.
16. 16. The semiconductor device according to any one of claims 12 to 15, wherein a width of a portion formed between 2 of the grooves is smaller than a width of one of the at least 2 grooves.
17. 17. The semiconductor device according to any one of claims 12 to 15, wherein a width of a portion formed between 2 of the grooves is larger than a width of one of the at least 2 grooves.

Description

Method for manufacturing semiconductor device and semiconductor device Technical Field The present embodiment relates to a method for manufacturing a semiconductor device and a semiconductor device. Background In dicing using a laser, in order to properly divide a wafer into a plurality of chips, it is desirable that cracks properly progress from a modified portion (modified layer). Disclosure of Invention The invention provides a method for manufacturing a semiconductor device capable of being more appropriately singulated, and a semiconductor device. The method for manufacturing a semiconductor device according to the present embodiment includes forming a1 st groove and a2 nd groove in a1 st surface of a semiconductor wafer, the 1 st groove and the 2 nd groove extending along a dicing area of the semiconductor wafer having the 1 st surface and the 2 nd surface on the opposite side of the 1 st surface and being arranged side by side. The method includes the step of irradiating a1 st laser beam from the 2 nd surface side of the semiconductor wafer to a position between the 1 st groove and the 2 nd groove when viewed from above, thereby forming a modified portion in the semiconductor wafer along the dicing area. The method includes the step of dicing (dicing) the semiconductor wafer into a plurality of semiconductor chips. Drawings Fig. 1 is a plan view showing an example of the partial structure of a semiconductor wafer according to embodiment 1. Fig. 2 is a perspective view illustrating the semiconductor device of embodiment 1. Fig. 3 is a plan view showing the laminate. Fig. 4 is a cross-sectional view showing an example of a memory cell having a three-dimensional structure. Fig. 5 is a cross-sectional view showing an example of a memory cell having a three-dimensional structure. Fig. 6 is a plan view showing an example of the semiconductor device of embodiment 1. Fig. 7 is a cross-sectional view showing an example of the structure of the chip region and the dicing region. Fig. 8A is a perspective view showing an example of a method for manufacturing the semiconductor device according to embodiment 1. Fig. 8B is a perspective view showing an example of a method for manufacturing the semiconductor device subsequent to fig. 8A. Fig. 8C is a perspective view showing an example of a method for manufacturing the semiconductor device subsequent to fig. 8B. Fig. 8D is a perspective view showing an example of a method for manufacturing the semiconductor device subsequent to fig. 8C. Fig. 8E is a perspective view showing an example of a method for manufacturing the semiconductor device subsequent to fig. 8D. Fig. 8F is a perspective view showing an example of a method for manufacturing the semiconductor device subsequent to fig. 8E. Fig. 8G is a perspective view showing an example of a method for manufacturing the semiconductor device subsequent to fig. 8F. Fig. 8H is a perspective view showing an example of a method for manufacturing the semiconductor device subsequent to fig. 8G. Fig. 9A is a cross-sectional view showing an example of a method for manufacturing the semiconductor device according to embodiment 1. Fig. 9B is a cross-sectional view showing an example of a method for manufacturing the semiconductor device subsequent to fig. 9A. Fig. 9C is a cross-sectional view showing an example of a method for manufacturing the semiconductor device subsequent to fig. 9B. Fig. 10A is a cross-sectional view showing an example of the structure of the semiconductor device of embodiment 1. Fig. 10B is a cross-sectional view showing an example of the structure of the semiconductor device of embodiment 1. Fig. 11A is a cross-sectional view showing an example of a method for manufacturing a semiconductor device of a comparative example. Fig. 11B is a cross-sectional view showing an example of a method for manufacturing a semiconductor device subsequent to fig. 11A. Fig. 12A is a perspective view showing an example of a method for manufacturing the semiconductor device according to embodiment 2. Fig. 12B is a perspective view showing an example of a method for manufacturing the semiconductor device subsequent to fig. 12A. Fig. 13 is a cross-sectional view showing an example of a method for manufacturing a semiconductor device according to embodiment 3. Fig. 14 is a cross-sectional view showing an example of a method for manufacturing a semiconductor device according to embodiment 4. Fig. 15 is a cross-sectional view showing an example of a method for manufacturing a semiconductor device according to embodiment 5. Fig. 16A is a cross-sectional view showing an example of a method for manufacturing a semiconductor device according to embodiment 6. Fig. 16B is a cross-sectional view showing an example of a method for manufacturing the semiconductor device subsequent to fig. 16A. Fig. 17A is a cross-sectional view showing an example of a method for manufacturing a semiconductor device according to embodiment 7. Fig. 17B is a cr