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CN-122028666-A - Epitaxial substrate, semiconductor device and preparation method of epitaxial layer

CN122028666ACN 122028666 ACN122028666 ACN 122028666ACN-122028666-A

Abstract

The application provides an epitaxial substrate, a semiconductor device and a preparation method of an epitaxial layer, wherein the preparation method of the semiconductor device specifically comprises the steps of firstly providing the epitaxial substrate; the epitaxial substrate comprises an epitaxial substrate and an epitaxial structure growing on the surface of the epitaxial substrate, and the surface layer of the epitaxial substrate, which is close to the epitaxial structure, is provided with a micro-bubble structure. And then carrying out heat treatment on the epitaxial substrate to enable the micro-bubble structure to grow and combine to form a stripping layer so as to split and separate the epitaxial substrate and the epitaxial structure along the stripping layer. The method comprises the steps of providing a conductive substrate, forming a bonding layer on one side surface of the conductive substrate, depositing a metal material on one side surface of the conductive substrate far away from the bonding layer to form an electrode layer, and finally bonding an epitaxial structure with the bonding layer to form the semiconductor device. The preparation method can reduce the thermal damage to the epitaxial structure and reduce the risk of cracking of the epitaxial structure, thereby improving the manufacturing yield of the semiconductor device.

Inventors

  • FAN SHENGCAI
  • XU PEI

Assignees

  • 惠科股份有限公司

Dates

Publication Date
20260512
Application Date
20260410

Claims (10)

  1. 1. A method of manufacturing a semiconductor device, comprising: the method comprises the steps of providing an epitaxial substrate, wherein the epitaxial substrate comprises an epitaxial substrate and an epitaxial structure growing on the surface of the epitaxial substrate, and the surface layer, close to the epitaxial structure, of the epitaxial substrate is provided with a micro-bubble structure; performing heat treatment on the epitaxial substrate to enable the micro-bubble structure to grow and combine to form a stripping layer so as to split and separate the epitaxial substrate and the epitaxial structure along the stripping layer; Forming a bonding layer on one side surface of the conductive substrate; Depositing a metal material on the surface of one side of the conductive substrate far away from the bonding layer to form an electrode layer; And bonding the epitaxial structure with the bonding layer to form the semiconductor device.
  2. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the step of providing an epitaxial substrate comprises: providing an epitaxial substrate; Forming the epitaxial structure on one side surface of the epitaxial substrate; And implanting ions into the surface layer of the epitaxial substrate, which is close to the epitaxial structure, so as to form the micro-bubble structure on the surface layer of the epitaxial substrate.
  3. 3. The method of manufacturing a semiconductor device according to claim 2, wherein the implanting ions into the epitaxial substrate near the surface layer of the epitaxial structure comprises: And bombarding the surface of one side of the epitaxial substrate far away from the epitaxial structure by using a high-energy ion beam, and implanting ions into the epitaxial substrate at a preset depth, wherein the preset depth is more than or equal to 250 nanometers and less than or equal to 350 nanometers, and is the distance between the surface of the epitaxial substrate close to the epitaxial structure and the microbubble structure.
  4. 4. A method for manufacturing a semiconductor device according to claim 3, wherein, The epitaxial substrate has a first region and a second region other than the first region; the step of bombarding a surface of the epitaxial substrate far away from the epitaxial structure by using a high-energy ion beam, and implanting the ions into the epitaxial substrate to a preset depth comprises the following steps: and bombarding the surface of the epitaxial substrate corresponding to the first region by using a high-energy ion beam, and implanting ions into the first region of the epitaxial substrate.
  5. 5. The method for manufacturing a semiconductor device according to claim 1, wherein, The epitaxial substrate has a first region and a second region other than the first region; the step of performing heat treatment on the epitaxial substrate to grow and combine the micro-bubble structures to form a stripping layer comprises the following steps: A first region of the epitaxial substrate is heat treated to crack and separate the epitaxial substrate from the epitaxial structure at the first region along the exfoliation layer.
  6. 6. The method for manufacturing a semiconductor device according to any one of claims 2 to 4, wherein the ions include hydrogen ions and helium ions, and a molar ratio of the hydrogen ions to the helium ions is 4:1 or more and 5:1 or less.
  7. 7. A method for manufacturing a semiconductor device according to any one of claims 2 to 4, wherein, A dose of the ions implanted into the epitaxial substrate is 1×10 16 ions/cm 2 or more and 1×10 17 ions/cm 2 or less; The ions include hydrogen ions and helium ions, the implantation energy of the hydrogen ions is more than or equal to 400keV and less than or equal to 600keV, and the implantation energy of the helium ions is more than or equal to 1.5MeV and less than or equal to 2MeV.
  8. 8. The method for manufacturing a semiconductor device according to claim 1, wherein, The temperature of the heat treatment is more than or equal to 400 ℃ and less than or equal to 500 ℃, and the time of the heat treatment is more than or equal to 0.5h and less than or equal to 1h.
  9. 9. A method of preparing an epitaxial layer, comprising: providing an epitaxial substrate; Forming an epitaxial structure on one side surface of the epitaxial substrate; implanting ions into the surface layer of the epitaxial substrate, which is close to the epitaxial structure, so as to form a micro-bubble structure on the surface layer of the epitaxial substrate; and carrying out heat treatment on the epitaxial substrate to enable the micro-bubble structure to grow and combine to form a stripping layer so as to split and separate the epitaxial substrate and the epitaxial structure along the stripping layer.
  10. 10. The epitaxial substrate is characterized by comprising an epitaxial substrate and an epitaxial structure grown on the surface of the epitaxial substrate, wherein the surface layer of the epitaxial substrate, which is close to the epitaxial structure, is provided with a micro-bubble structure.

Description

Epitaxial substrate, semiconductor device and preparation method of epitaxial layer Technical Field The present application relates to the field of semiconductor technology, and in particular, to an epitaxial substrate, a semiconductor device, and a method for preparing an epitaxial layer. Background In the existing semiconductor device manufacturing process, after an epitaxial layer is grown on a substrate, a laser lift-off technology is required to separate the epitaxial layer from the substrate. The technology irradiates from the substrate side through laser, so that laser energy is absorbed at the interface between the substrate and the epitaxial layer, high temperature and high pressure are generated to cause the semiconductor material at the interface to be thermally decomposed or ablated, and after a tiny stripping layer is formed, the epitaxial layer is separated from the substrate through a mechanical or vacuum adsorption mode. In addition, shock waves generated by laser pulses can also cause microcracks or cracks of a thin film of a brittle epitaxial layer, and particularly, the yield of the semiconductor device is obviously reduced when the thin film is peeled off in a large area. Disclosure of Invention The application provides an epitaxial substrate, a semiconductor device and a preparation method of an epitaxial layer, and aims to solve the problems of thermal damage and cracks of the semiconductor device caused by the existing laser stripping technology. In order to solve the technical problems, the application adopts a technical scheme that the preparation method of the semiconductor device comprises the following steps: the method comprises the steps of providing an epitaxial substrate, wherein the epitaxial substrate comprises an epitaxial substrate and an epitaxial structure growing on the surface of the epitaxial substrate, and the surface layer, close to the epitaxial structure, of the epitaxial substrate is provided with a micro-bubble structure; performing heat treatment on the epitaxial substrate to enable the micro-bubble structure to grow and combine to form a stripping layer so as to split and separate the epitaxial substrate and the epitaxial structure along the stripping layer; Forming a bonding layer on one side surface of the conductive substrate; Depositing a metal material on the surface of one side of the conductive substrate far away from the bonding layer to form an electrode layer; And bonding the epitaxial structure with the bonding layer to form the semiconductor device. In one embodiment, the step of providing an epitaxial substrate includes: providing an epitaxial substrate; Forming the epitaxial structure on one side surface of the epitaxial substrate; And implanting ions into the surface layer of the epitaxial substrate, which is close to the epitaxial structure, so as to form the micro-bubble structure on the surface layer of the epitaxial substrate. In one embodiment, the step of implanting ions into the surface layer on one side of the epitaxial substrate includes: And bombarding the surface of one side of the epitaxial substrate far away from the epitaxial structure by using a high-energy ion beam, and implanting ions into the epitaxial substrate at a preset depth, wherein the preset depth is more than or equal to 250 nanometers and less than or equal to 350 nanometers, and is the distance between the surface of the epitaxial substrate close to the epitaxial structure and the microbubble structure. In a specific embodiment, the epitaxial substrate has a first region and a second region other than the first region; the step of bombarding a surface of the epitaxial substrate far away from the epitaxial structure by using a high-energy ion beam, and implanting the ions into the epitaxial substrate to a preset depth comprises the following steps: and bombarding the surface of the epitaxial substrate corresponding to the first region by using a high-energy ion beam, and implanting ions into the first region of the epitaxial substrate. In a specific embodiment, the epitaxial substrate has a first region and a second region other than the first region; the step of performing heat treatment on the epitaxial substrate to grow and combine the micro-bubble structures to form a stripping layer comprises the following steps: A first region of the epitaxial substrate is heat treated to crack and separate the epitaxial substrate from the epitaxial structure at the first region along the exfoliation layer. In a specific embodiment, the ions comprise hydrogen ions and helium ions, and the molar ratio of the hydrogen ions to the helium ions is greater than or equal to 4:1 and less than or equal to 5:1. In a specific embodiment, the dose of the ions implanted into the epitaxial substrate is 1×10 16ions/cm2 or more and 1×10 17ions/cm2 or less; The ions include hydrogen ions and helium ions, the implantation energy of the hydrogen ions is more than or equal to 400keV and less than