Search

CN-122028669-A - Silicon wafer defect treatment method, surface treatment liquid, silicon wafer and cleaning device

CN122028669ACN 122028669 ACN122028669 ACN 122028669ACN-122028669-A

Abstract

The application provides a silicon wafer defect treatment method which is used for treating delayed water stain defects of a silicon wafer. The method for treating the defects of the silicon wafer comprises the steps of performing wet cleaning on the silicon wafer with the silicon dioxide polishing surface, and contacting the silicon dioxide polishing surface with a surface treatment liquid after the wet cleaning to form a self-assembled monolayer on the silicon dioxide polishing surface. Wherein the surface treatment liquid comprises ultrapure water and a perfluoroalkyl phosphonic acid compound dissolved in the ultrapure water. And performing ultrapure water rinsing and drying treatment on the silicon wafer after the self-assembled monolayer is formed on the polished surface of the silicon dioxide. The method can inhibit the generation of delayed water stain defects after storage at high temperature and high humidity and re-cleaning and drying by using the interface passivation to occupy the adsorption site of Si-OH, and is suitable for cleaning the silicon wafer for manufacturing the integrated circuit.

Inventors

  • ZHANG SHENSHEN

Assignees

  • 西安奕斯伟材料科技股份有限公司
  • 西安奕斯伟硅片技术有限公司

Dates

Publication Date
20260512
Application Date
20251229

Claims (13)

  1. 1. A method for treating a silicon wafer defect, for treating a delayed water stain defect of the silicon wafer, comprising: performing wet cleaning on a silicon wafer having a polished surface of silicon dioxide; Contacting the silicon dioxide polishing surface of the silicon wafer with a surface treatment liquid to form a self-assembled monolayer on the silicon dioxide polishing surface, wherein the surface treatment liquid comprises ultrapure water and a perfluoroalkyl phosphonic acid compound dissolved in the ultrapure water, and And rinsing and drying the silicon wafer with ultrapure water.
  2. 2. The method for treating a silicon wafer defect according to claim 1, wherein the thickness of the self-assembled monolayer is 1nm to 3nm.
  3. 3. The method of claim 1, wherein the perfluoroalkyl phosphonic acid compound is at least one of a perfluoroalkyl phosphonic acid or a perfluoroalkyl phosphonate represented by the general formula Rf-PO (OH) 2 , wherein Rf is a perfluoroalkyl group in the range of C 4 ～C 18 .
  4. 4. The method of claim 3, wherein Rf is at least one of C 6 F 13 -、C 8 F 17 -and C 10 F 21 -.
  5. 5. The method for treating a silicon wafer defect according to claim 1, wherein the mass concentration of the perfluoroalkyl phosphonic acid compound in the surface treatment liquid is 0.1ppm to 50ppm.
  6. 6. The method for treating a silicon wafer defect according to claim 5, wherein the mass concentration is 1ppm to 10ppm.
  7. 7. The method for treating a silicon wafer defect according to claim 1, wherein, The contact mode of the surface treatment liquid and the silicon dioxide polishing surface is an immersion mode or a single-chip rotary spraying mode, and The contact temperature of the surface treatment liquid and the silicon dioxide polishing surface is 20-60 ℃, and the contact time is 30-120 s.
  8. 8. The method for treating a silicon wafer defect according to claim 1, wherein the rinsing time of ultrapure water is 30s to 60s.
  9. 9. A surface treatment liquid comprising ultrapure water and a perfluoroalkyl phosphonic acid compound dissolved in the ultrapure water, the perfluoroalkyl phosphonic acid compound comprising a perfluoroalkyl phosphonic acid represented by the general formula Rf-PO (OH) 2 , wherein Rf is a perfluoroalkyl group in the range of C 4 ～C 18 .
  10. 10. The surface treatment liquid according to claim 9, wherein the mass concentration of the perfluoroalkyl phosphonic acid in the surface treatment liquid is 0.1ppm to 50ppm.
  11. 11. The surface treatment fluid of claim 9, wherein Rf is at least one of C 6 F 13 -、C 8 F 17 "and C 10 F 21 ".
  12. 12. The silicon wafer is characterized by comprising a silicon dioxide polishing surface, wherein a self-assembled monolayer is formed on the silicon dioxide polishing surface, the self-assembled monolayer is composed of perfluoroalkyl phosphonic acid molecules in perfluoroalkyl phosphonic acid compounds, the perfluoroalkyl phosphonic acid is represented by a general formula Rf-PO (OH) 2 , rf is perfluoroalkyl in a C 4 ～C 18 range, and the thickness of the self-assembled monolayer is 1-3 nm.
  13. 13. A silicon wafer cleaning device, characterized in that the silicon wafer cleaning device comprises an alkaline cleaning tank, an acidic cleaning tank, a multistage ultrapure water cleaning tank, an ultrapure water rinsing tank, a surface treatment tank and another ultrapure water rinsing tank which are sequentially arranged, wherein the surface treatment tank is used for containing the surface treatment liquid according to any one of claims 9 to 11, the other ultrapure water rinsing tank is used for rinsing the silicon wafer with ultrapure water after surface passivation, and the silicon wafer cleaning device further comprises a drying module connected with each cleaning tank and used for drying the silicon wafer rinsed with ultrapure water.

Description

Silicon wafer defect treatment method, surface treatment liquid, silicon wafer and cleaning device Technical Field The application relates to the technical field of semiconductor silicon wafer cleaning, in particular to a silicon wafer defect treatment method, surface treatment liquid, a silicon wafer and a silicon wafer cleaning device. Background As integrated circuit process nodes continue to advance, silicon wafer surface defect density and metal pollution level are increasingly being controlled. A typical polished silicon wafer is typically subjected to a multi-stage wet cleaning process, such as alkaline cleaning, acidic cleaning, multi-stage Ultra Pure Water (UPW) cleaning, in sequence, in combination with drying to remove surface liquid films to reduce particle defects and metal ion residues, prior to entering the device fabrication process. However, in advanced process nodes, the industry has increasingly found a problem known as "delayed water mark defect", specifically that the wafer has a good appearance after the first cleaning and drying, but after being subjected to high temperature and high humidity storage and cleaning and drying again, the wafer surface still shows a large number of water mark scattering defects, which adversely affect subsequent device exposure, film deposition and pattern transfer. Disclosure of Invention The present application provides in a first aspect a method for treating a silicon wafer defect for treating a delayed water stain defect of the silicon wafer. The method for processing the defects of the silicon wafer comprises the following steps: performing wet cleaning on a silicon wafer having a polished surface of silicon dioxide; After wet cleaning, the silica polishing surface is contacted with a surface treatment liquid to form a self-assembled monolayer on the silica polishing surface, wherein the surface treatment liquid comprises ultrapure water and a perfluoroalkylphosphonic acid compound dissolved in the ultrapure water, and And rinsing and drying the silicon wafer with ultrapure water. The method for treating a silicon wafer defect according to the first aspect of the present application, wherein the self-assembled monolayer is formed by condensation reaction of phosphonic acid groups of a perfluoroalkyl phosphonic acid compound with Si-OH adsorption sites of a polished surface of silicon dioxide and is immobilized on the polished surface of silicon dioxide by P-O-Si bonds. The method for treating a silicon wafer defect according to the first aspect of the present application, wherein the thickness of the self-assembled monolayer is 1nm to 3nm. The method for treating a silicon wafer defect according to the first aspect of the present application, wherein the perfluoroalkyl phosphonic acid compound is at least one of a perfluoroalkyl phosphonic acid or a perfluoroalkyl phosphonate represented by the general formula Rf-PO (OH) 2, and Rf is a perfluoroalkyl group in the range of C 4～C18. Also, in some embodiments, rf may be at least one of C 6F13-、C8F17 -and C 10F21-. The method for treating a silicon wafer defect according to the first aspect of the present application, wherein the mass concentration of the perfluoroalkyl phosphonic acid compound in the surface treatment liquid is 0.1ppm to 50ppm. In some examples, the mass concentration of the perfluoroalkyl phosphonic acid compound in the surface treatment liquid may be further controlled to be 1ppm to 10ppm. The method for treating a silicon wafer defect according to the first aspect of the present application, wherein the surface treating liquid is brought into contact with the polished surface of silicon dioxide in an immersion manner or in a single-wafer rotary spray manner. The contact temperature of the surface treatment liquid and the silicon dioxide polishing surface is 20-60 ℃, and the contact time is 30-120 s. The method for treating defects of a silicon wafer according to the first aspect of the present application, wherein the rinsing time of ultrapure water is 30s to 60s. The present application provides in a second aspect a surface treatment fluid for polishing a surface of a silicon wafer. The surface treatment liquid includes ultrapure water and a perfluoroalkyl phosphonic acid compound dissolved in the ultrapure water. The perfluoroalkyl phosphonic acid compounds include perfluoroalkyl phosphonic acids represented by the general formula Rf-PO (OH) 2, wherein Rf is a perfluoroalkyl group in the range of C 4～C18. The surface treatment liquid according to the second aspect of the present application, wherein the perfluoroalkyl phosphonic acid compound can form a self-assembled monolayer immobilized by P-O-Si bond on the polished surface of silica. The surface treatment liquid according to the second aspect of the present application, wherein the mass concentration of the perfluoroalkyl phosphonic acid in the surface treatment liquid is 0.1ppm to 50ppm. The surface treatment liquid according