CN-122028684-A - Temperature control method, system and storage medium for semiconductor heater

Abstract

The application provides a temperature control method, a system and a storage medium of a semiconductor heater, wherein the temperature control method comprises the steps of obtaining the actual temperature of the semiconductor heater, calculating a temperature error and an error change rate according to the actual temperature of the semiconductor heater, determining a corresponding proportional coefficient basic value and an integral coefficient basic value according to the temperature error and the error change rate, determining a corresponding proportional coefficient basic value and an integral coefficient basic value according to the actual temperature at the current moment, determining a target proportional coefficient according to the proportional coefficient variable and the proportional coefficient basic value, determining a target integral coefficient according to the integral coefficient variable and the integral coefficient basic value, and finally controlling the actual temperature of the semiconductor heater according to the temperature error, the target proportional coefficient and the target integral coefficient so as to enable the actual temperature of the semiconductor heater to reach the target temperature. The temperature control method can be well adapted to the complex working condition of the actual semiconductor manufacturing process, and has high temperature control precision and stability.

Inventors

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Assignees

• 深圳市华芯半导体装备技术有限公司

Dates

Publication Date

20260512

Application Date

20260407

Claims (10)

1. 1. A temperature control method of a semiconductor heater, the temperature control method comprising: Acquiring the actual temperature of the semiconductor heater; Calculating a temperature error and an error change rate according to the actual temperature of the semiconductor heater, wherein the temperature error is a difference value between a preset target temperature and the actual temperature at a sampling time, and the error change rate is a ratio of the difference value between the temperature error at the current time and the temperature error at the previous time relative to the time interval between the current time and the previous time; Determining corresponding proportional coefficient variables and integral coefficient variables according to the temperature errors and the error change rates; determining corresponding proportional coefficient base values and integral coefficient base values according to the actual temperature at the current moment; Determining a target proportional coefficient according to the proportional coefficient variable and the proportional coefficient base value, and determining a target integral coefficient according to the integral coefficient variable and the integral coefficient base value; And controlling the actual temperature of the semiconductor heater according to the temperature error, the target proportional coefficient and the target integral coefficient so as to enable the actual temperature of the semiconductor heater to reach the target temperature.
2. 2. The temperature control method of claim 1, wherein said determining corresponding proportional and integral coefficient variables from said temperature error and said rate of change of error comprises: Determining a temperature error fuzzy grade according to the temperature error, and determining an error change rate fuzzy grade according to the error change rate; Determining a proportional coefficient adjustment level and an integral coefficient adjustment level according to the temperature error blur level, the error change rate blur level and a preset blur rule, wherein the blur rule is used for indicating the corresponding relation between the proportional coefficient adjustment level and the integral coefficient adjustment level and the temperature error blur level and the error change rate blur level; and determining the proportional coefficient variable according to the proportional coefficient adjustment level, and determining the integral coefficient variable according to the integral coefficient adjustment level, wherein the proportional coefficient variable is related to the proportional coefficient adjustment level, and the integral coefficient variable is related to the integral coefficient adjustment level.
3. 3. The temperature control method according to claim 2, wherein the fuzzy rule includes: When the temperature error fuzzy grade represents temperature overshoot and the error change rate fuzzy grade represents a heating trend, the larger the heating trend represented by the error change rate fuzzy grade is, the larger the proportional coefficient adjustment grade is, and the smaller the integral coefficient adjustment grade is; when the temperature error fuzzy grade represents temperature undershoot and the error change rate fuzzy grade represents cooling trend, the larger the cooling trend represented by the error change rate fuzzy grade is, the larger the proportional coefficient adjustment grade is, and the smaller the integral coefficient adjustment grade is; when the temperature error fuzzy grade represents temperature overshoot and the error change rate fuzzy grade represents cooling trend, the larger the cooling trend represented by the error change rate fuzzy grade is, the smaller the proportional coefficient adjustment grade is, and the larger the integral coefficient adjustment grade is; When the temperature error fuzzy grade represents temperature undershoot and the error change rate fuzzy grade represents temperature rising trend, the larger the temperature rising trend represented by the error change rate fuzzy grade is, the smaller the proportional coefficient adjustment grade is, and the larger the integral coefficient adjustment grade is.
4. 4. The temperature control method of claim 1, wherein the scaling factor base value is inversely related to an actual temperature of the semiconductor heater and the integration factor base value is positively related to the actual temperature of the semiconductor heater.
5. 5. The temperature control method according to claim 1, wherein said controlling the actual temperature of the semiconductor heater based on the temperature error, the target proportional coefficient, and the target integral coefficient comprises: Integrating the temperature error to obtain an initial integral error; determining a target integral error according to the initial integral error; and controlling the actual temperature of the semiconductor heater according to the temperature error, the target proportional coefficient, the target integral error and the target integral coefficient.
6. 6. The temperature control method of claim 5, wherein said determining a target integrated error from said initial integrated error comprises: when the initial integral error is larger than 0 and smaller than a preset upper limit value, taking the initial integral error as the target integral error; or when the initial integral error is greater than or equal to a preset upper limit value, taking the preset upper limit value as the target integral error; Or when the initial integral error is smaller than 0, multiplying the initial integral error by a preset attenuation coefficient to obtain the target integral error.
7. 7. The temperature control method according to any one of claims 1 to 6, characterized in that after determining the target proportional coefficient and the target integral coefficient, the temperature control method further comprises: confirming whether the actual temperature of the semiconductor heater meets a preset stable condition; if yes, maintaining the target proportional coefficient and the target integral coefficient unchanged; if not, re-determining the target proportional coefficient and the target integral coefficient; Wherein the semiconductor heater includes an inner region and an outer region, and the stable condition includes: the temperature difference between the actual temperature of the inner zone and the actual temperature of the outer zone is less than or equal to a first set value; and, a temperature error of the actual temperature of the inner zone relative to the target temperature, and a temperature error of the actual temperature of the outer zone relative to the target temperature are all not greater than a second set value; And the oscillation frequency of the actual temperature of the inner area and the oscillation frequency of the actual temperature of the outer area are not larger than a third set value.
8. 8. The temperature control method according to any one of claims 1 to 6, characterized in that the temperature control method further comprises: When the actual temperature at the current moment is smaller than a first preset temperature threshold value, controlling the actual temperature of the semiconductor heater to change according to a preset target rate; When the actual temperature at the current time is greater than or equal to the first preset temperature threshold and is smaller than a second preset temperature threshold, determining a corresponding proportional coefficient variable and an integral coefficient variable according to the temperature error and the error change rate, wherein the integral coefficient variable is 0; And when the actual temperature at the current time is greater than or equal to the second preset temperature threshold, determining a corresponding proportional coefficient variable and an integral coefficient variable according to the temperature error and the error change rate, wherein the integral coefficient variable is not 0.
9. 9. A temperature control system of a semiconductor heater, characterized in that the temperature control system comprises a temperature sensor and a controller, wherein the temperature sensor is arranged adjacent to the semiconductor heater and is used for detecting the actual temperature of the semiconductor heater, and the controller is electrically connected with the temperature sensor and the semiconductor heater and is used for executing the temperature control method according to any one of claims 1 to 8.
10. 10. A computer-readable storage medium, characterized in that the computer-readable storage medium stores a computer program that is loaded by a processor to execute the temperature control method according to any one of claims 1 to 8.

Description

Temperature control method, system and storage medium for semiconductor heater Technical Field The application relates to the technical field of semiconductors, in particular to a temperature control method, a temperature control system and a storage medium of a semiconductor heater. Background In the semiconductor processing and manufacturing process, the semiconductor heater bears the key functions of bearing the wafer and providing a stable temperature field, and the temperature control precision and stability of the semiconductor heater directly determine the deposition rate, component uniformity and crystallization quality of the thin film on the surface of the wafer, so that the semiconductor heater is one of the core process links influencing the performance and yield of semiconductor devices. At present, a traditional PI control mode is generally adopted in the industry, and closed-loop adjustment of temperature is realized through fixed PI parameters so as to meet the temperature control requirement of a semiconductor heater. However, the conventional PI control method is difficult to adapt to the complex working condition of the actual semiconductor manufacturing process, and is prone to cause abnormal control and risk of linkage process, so that the process requirements of high temperature control precision and high stability cannot be met. Disclosure of Invention In view of the above, the application provides a temperature control method, a temperature control system and a storage medium for a semiconductor heater, which can be well adapted to the complex working condition of the actual semiconductor manufacturing process, and have high temperature control precision and stability. The first aspect of the application provides a temperature control method of a semiconductor heater, which comprises the steps of obtaining the actual temperature of the semiconductor heater, calculating a temperature error and an error change rate according to the actual temperature of the semiconductor heater, wherein the temperature error is a difference value between a preset target temperature and the actual temperature at a sampling time, the error change rate is a ratio of the difference value between the temperature error at the current time and the temperature error at the previous time relative to a time interval between the current time and the previous time, determining a corresponding proportional coefficient variable and an integral coefficient variable according to the temperature error and the error change rate, determining a corresponding proportional coefficient base value and an integral coefficient base value according to the actual temperature at the current time, determining a target proportional coefficient according to the proportional coefficient variable and the integral coefficient base value, and controlling the actual temperature of the semiconductor heater according to the temperature error, the target proportional coefficient and the target integral coefficient so as to enable the actual temperature of the semiconductor heater to reach the target temperature. In one embodiment, corresponding proportional coefficient variables and integral coefficient variables are determined according to temperature errors and error change rates, the proportional coefficient variables are determined according to the proportional coefficient adjustment levels, the integral coefficient variables are determined according to the integral coefficient adjustment levels, the proportional coefficient variables are related to the proportional coefficient adjustment levels, and the integral coefficient variables are related to the integral coefficient adjustment levels. In one embodiment, the fuzzy rule comprises that when the temperature error fuzzy grade represents temperature overshoot and the error change rate fuzzy grade represents a temperature rising trend, the larger the temperature rising trend represented by the error change rate fuzzy grade is, the larger the proportional coefficient adjustment grade is, the smaller the integral coefficient adjustment grade is, the larger the temperature rising trend represented by the error change rate fuzzy grade is, the larger the temperature error fuzzy grade represents temperature overshoot and the error change rate fuzzy grade represents temperature falling trend, the smaller the proportional coefficient adjustment grade is, the larger the integral coefficient adjustment grade is, and the larger the temperature rising trend represented by the error change rate fuzzy grade is, the smaller the proportional coefficient adjustment grade is, and the integral coefficient adjustment grade is the larger the integral coefficient adjustment grade is. In one embodiment, the scaling factor base is inversely related to the actual temperature of the semiconductor heater and the integration factor base is positively related to the actual temperature of the semiconductor heater. I