CN-122028705-A - CdSe film thickness confirmation method for CdTe power generation glass window layer and CdTe power generation glass preparation method

Abstract

The invention belongs to the technical field of photoelectric cells, and discloses a CdSe film thickness confirmation method of a CdTe power generation glass window layer and a CdTe power generation glass preparation method, wherein the preparation method comprises the steps of determining CdTe power generation glass with the CdSe window layer as a unit to be tested, and performing IV test on the CdTe power generation glass to obtain a first test result; and constructing a related mathematical model of the CdSe film thickness and IV test based on the first test result and the second test result, and calculating the actual CdSe film thickness. The method provided by the invention has the advantages of high testing speed, low equipment cost, simplicity and convenience in operation, high accuracy and the like. The implementation of the method is beneficial to improving the production efficiency and performance stability of CdTe power generation glass and promotes the application and development of the CdTe power generation glass in the field of renewable energy sources. And the CdTe power generation glass is developed and prepared based on the determination method, so that the accuracy of determining the thickness of the CdSe film can be improved, and the performance of the CdTe power generation glass can be optimized.

Inventors

• WANG JINPING
• LIU XIN
• FAN JIANPING
• SHU YI
• FU GANHUA
• PAN JINGONG

Assignees

• 成都中建材光电材料有限公司

Dates

Publication Date

20260512

Application Date

20241104

Claims (10)

1. 1. The method for confirming the CdSe film thickness of the CdTe power generation glass window layer is characterized by comprising the following steps of: Determining CdTe power generation glass with a CdSe window layer as a unit to be tested, and performing IV test on the CdTe power generation glass to obtain a first test result; and constructing a related mathematical model of CdSe film thickness and IV test based on the first test result and the second test result, and calculating the actual CdSe film thickness.
2. 2. The method for determining the CdTe film thickness of the CdTe power generation glass window layer according to claim 1, wherein the first test result includes a current-voltage characteristic curve and key parameters of the unit to be tested, and the key parameters include an open-circuit voltage, a short-circuit current, a filling factor and conversion efficiency.
3. 3. The method for confirming the thickness of CdSe in a CdTe power generation glass window layer according to claim 2, wherein the mathematical model related to the CdSe thickness and IV test is used for reflecting the influence of the CdSe thickness on the cell performance, and comprises the following parameters: short-circuit current, quantum efficiency, photon flux, electron charge quantity, effective area and CdSe film thickness; wherein, the effective area represents the area of the CdSe thin film that is illuminated and generates current.
4. 4. The method for confirming the thickness of CdSe in a CdTe power generation glass window layer according to claim 3, wherein the thickness of CdSe is calculated, and the method further comprises correction constants for fixed parameters, cdSe material characteristics and process flow influence factors.
5. 5. The method for confirming the CdSe film thickness of the CdTe power generation glass window layer according to claim 3, wherein when a related mathematical model of CdSe film thickness and IV test is constructed, model determination is carried out based on the relation between the CdSe film thickness and key parameter short-circuit current.
6. 6. The method for confirming the CdSe film thickness of the CdTe power generation glass window layer according to claim 1, wherein the CdSe film thickness test is carried out on the unit to be tested by adopting an RXF method and/or a film thickness test instrument.
7. 7. A method for preparing CdTe power generation glass, which adopts the method for confirming the CdTe film thickness of the CdTe power generation glass window layer according to any one of claims 1 to 6 to confirm the film thickness, and is characterized in that the method comprises the following preparation steps: Preparing a glass substrate, arranging a TCO front electrode on the other surface of the glass substrate receiving sunlight, and performing large-area near-space evaporation on the TCO front electrode to deposit to obtain a CdSe window layer; carrying out large-area near-space evaporation on the CdSe window layer to obtain a CdTe absorption layer by deposition; etching the CdTe absorption layer to form a suede structure; performing magnetron sputtering on the CdTe absorption layer, and depositing to obtain a back contact layer; and performing magnetron sputtering on the back contact layer, and depositing to obtain the metal back electrode.
8. 8. The method for preparing the CdTe power generation glass as claimed in claim 7, wherein the glass substrate, the TCO front electrode, the CdSe window layer and the CdTe absorption layer after being processed are sequentially arranged when the CdTe power generation glass is configured, and the metal back electrode is positioned between the CdTe absorption layer and the back contact layer.
9. 9. The method for preparing the CdTe power generation glass as claimed in claim 7, wherein the dividing of the CdTe power generation glass subcells is performed by laser etching.
10. 10. A method of producing CdTe power generating glass as claimed in claim 7, wherein the CdTe power generating glass is a cadmium telluride power generating glass.

Description

CdSe film thickness confirmation method for CdTe power generation glass window layer and CdTe power generation glass preparation method Technical Field The invention relates to the technical field of photoelectric cells, in particular to a CdSe film thickness confirmation method of a CdTe power generation glass window layer and a CdTe power generation glass preparation method. Background CdTe solar cells are important in the thin film solar cell field due to their high conversion efficiency and low manufacturing cost. The window layer, which is a critical part of CdTe solar cells, has a significant impact on cell performance. Among them, for CdSe thin films, which are used as a light absorbing layer or an electron transporting layer of a solar cell, the thickness thereof may have an influence on the following aspects: Light absorption efficiency a thinner CdSe film may not sufficiently absorb sunlight, resulting in a decrease in photoelectric conversion efficiency. Thicker CdSe films may increase light absorption, but too thick may also result in multiple reflections of light within the film to be lost, or increase the transport distance of carriers within the film, thereby increasing recombination losses. Carrier transport-the thickness of the film affects the transport distance of carriers (electrons and holes) from the light absorbing layer to the electrode. Thicker films may increase transmission distance, thereby increasing recombination losses and resistive losses. The cell performance is that the light absorption efficiency and the carrier transmission are comprehensively considered, and the optimal CdSe film thickness exists, so that the photoelectric conversion efficiency of the solar cell can be maximized. The thickness of the film also affects the stability of the battery. Thicker films may have better mechanical stability and weatherability, but may also increase the cost and complexity of manufacturing the battery. However, the conventional CdSe film thickness determining method, such as X-ray diffraction (XRD), scanning Electron Microscope (SEM), etc., has disadvantages of long test time, high equipment cost, complicated operation, etc., which is unfavorable for mass production and rapid test. Other methods such as metallographic microscopy may be affected by various factors such as the surface state of the sample and the test environment, so that the accuracy of the measurement result is limited, and although the method has high resolution, complicated equipment and technical support are required, and the requirement on sample preparation is high. Moreover, conventional methods may only be suitable for CdSe films of a specific thickness range, and may not be accurately measured for too thin or too thick film layers. There may be overlap in test ranges between different methods, but there may also be blank areas, resulting in that CdSe films of certain specific thickness cannot be effectively measured. The measurement accuracy may be affected by various factors such as instrument accuracy, operation error, etc., resulting in a certain error range of the measurement result. Particularly when measuring thinner CdSe films, some specific measurement methods require complicated operation steps and expertise, since the measurement signals are weaker and may be more susceptible to interference and errors. This not only increases the difficulty and time costs of the test, but may also introduce errors due to improper operation and is costly, requiring expensive equipment and maintenance costs, such as electron microscopy, X-ray diffraction, and the like. This limits the feasibility of these methods in a wide range of applications, especially where large amounts of testing are required, and not in timely response and monitoring. Therefore, it is of great importance to develop a rapid, accurate and low-cost method for determining the thickness of CdSe film. Disclosure of Invention In view of the above, the present invention provides a method for confirming the CdTe film thickness of a CdTe power generation glass window layer and a method for preparing CdTe power generation glass, so as to solve the above problems. In order to solve the technical problems, the invention provides A method for confirming CdSe film thickness of a CdTe power generation glass window layer comprises the following steps: Determining CdTe power generation glass with a CdSe window layer as a unit to be tested, and performing IV test on the CdTe power generation glass to obtain a first test result; And constructing a related mathematical model of the CdSe film thickness and IV test based on the first test result and the second test result, and calculating the actual CdSe film thickness. As an alternative, the first test result includes a current-voltage characteristic curve of the unit under test and key parameters including open-circuit voltage, short-circuit current, fill factor and conversion efficiency. As an alternative, a ma