CN-122028712-A - Method for monitoring resistance fluctuation of gamma resistor

CN122028712ACN 122028712 ACN122028712 ACN 122028712ACN-122028712-A

Abstract

The application provides a method for monitoring resistance fluctuation of a gamma resistor, which belongs to the technical field of semiconductors and comprises the steps of throwing a product wafer into an ion implantation machine to execute ion implantation, continuously obtaining a plurality of source bias voltages of an ion source assembly of the ion implantation machine in a preset time window at a preset value receiving frequency, obtaining average movement range of the plurality of source bias voltages in the preset time window, judging whether the average movement range is smaller than or equal to the preset value, if so, judging that the resistance fluctuation of the gamma resistor is qualified, continuing to execute ion implantation on the product wafer, and if not, judging that the resistance fluctuation of the gamma resistor is unqualified, and stopping. The application can accurately and efficiently monitor the resistance fluctuation of the gamma resistor during ion implantation.

Inventors

LI JIAN
Shao Yingya
WANG XUECHUN

Assignees

合肥晶合集成电路股份有限公司

Dates

Publication Date: 20260512
Application Date: 20260413

Claims (10)

1. A method for monitoring resistance fluctuation of a gamma resistor, which is applied to a process of performing ion implantation on a wafer to form the gamma resistor, the method comprising: Putting a product wafer into an ion implantation machine to perform ion implantation, continuously acquiring a plurality of source bias voltages of an ion source assembly of the ion implantation machine in a preset time window at a preset receiving frequency, and acquiring average moving range of the source bias voltages in the preset time window, and And judging whether the average movement range is smaller than or equal to a preset value, if so, judging that the resistance fluctuation of the gamma resistor is qualified, continuing to perform ion implantation on the product wafer, and if not, judging that the resistance fluctuation of the gamma resistor is unqualified, and stopping.
2. The method of claim 1, wherein before the product wafer is put into the ion implanter to perform ion implantation, the method further comprises: Putting a test wafer into the ion implantation machine to perform ion implantation, continuously acquiring a plurality of source bias voltages of the ion source assembly in the preset time window at the preset receiving frequency, and acquiring the average moving range of the source bias voltages in the preset time window, and And judging whether the average movement range is smaller than or equal to the preset value, and if so, performing ion implantation on the product wafer.
3. The method for monitoring the fluctuation of the resistance of the gamma resistor according to claim 1 or 2, wherein the average movement range is calculated using the following formula: ; Wherein n is the number of the source bias voltages acquired in the preset time window, i is an integer between 2~n, and x i and x i-1 are the source bias voltages acquired in two adjacent times.
4. The method for monitoring the fluctuation of the resistance value of the gamma resistor according to claim 1 or 2, wherein after obtaining the average movement range of the plurality of source bias voltages within the preset time window, the average movement range is displayed on an average movement range map in real time, and an upper limit of the specification of the average movement range map is set to the preset value.
5. The method of claim 1, wherein the predetermined collection frequency is greater than or equal to 10Hz, and/or the number of source bias voltages collected within each predetermined time window is greater than or equal to 700.
6. The method for monitoring the fluctuation of the resistance of the gamma resistor according to claim 1 or 5, wherein the preset time window is greater than 70 seconds.
7. The method for monitoring the fluctuation of the resistance of the gamma resistor according to claim 1, wherein the step of obtaining the preset value comprises: Performing ion implantation on a plurality of product wafers, acquiring the average movement range of a plurality of source bias voltages in the preset time window at the preset receiving frequency in each ion implantation process, and And obtaining defective rate data of the product wafers after the gamma resistors are formed, and determining the preset value according to the average movement range set of the product wafers and the defective rate data.
8. The method of claim 7, wherein the defective rate data includes a gray scale voltage defective rate of the gamma resistor when applied to a display driving chip.
9. The method of claim 1, wherein the ion source assembly is serviced after determining that the gamma resistor has failed to have its resistance fluctuation.
10. The method according to claim 1, wherein the ion implanter is a ribbon beam ion implanter, and the ribbon beam ion implanter is used to implant ions into the polysilicon layers in the gamma resistor region of the product wafer at least twice, and each time the ions are implanted, the ribbon beam forms a predetermined angle with the moving direction of the product wafer, and the predetermined angle is 35 ° to 55 °.

Description

Method for monitoring resistance fluctuation of gamma resistor Technical Field The application relates to the technical field of semiconductors, in particular to a method for monitoring resistance fluctuation of a gamma resistor. Background In a display device, a Gamma (Gamma) circuit of a driving chip (Source IC) controls gray voltages of pixels of a screen to adjust brightness of the screen, i.e., the Gamma circuit directly affects display effect and performance of the display device. Therefore, the debugging of gamma circuits plays a critical role in the manufacturing process of display devices. The gamma circuit comprises a resistor voltage-dividing network formed by connecting a plurality of gamma resistors in series, the variation of the resistance value of the gamma resistors connected in series directly influences the output gray-scale voltage division, and the gray-scale voltage division is required to be clamped in a certain range so as to ensure that pixels cannot be too bright or insufficient in brightness, so that compared with a common polysilicon resistor, the voltage-dividing network meets the requirement of the display device on fine voltage division of the resistor voltage-dividing network, and a driving chip has more strict requirement on the fluctuation of the resistance value of the gamma resistor. Therefore, in preparing the gamma resistor, it is important how to accurately and efficiently monitor the fluctuation of the resistance value of the gamma resistor. Disclosure of Invention In view of the above, the embodiments of the present application are directed to providing a method for monitoring the resistance fluctuation of a gamma resistor, which is used for accurately and efficiently monitoring the resistance fluctuation of the gamma resistor. The application provides a method for monitoring resistance fluctuation of a gamma resistor, which is applied to a process of performing ion implantation on a wafer to form the gamma resistor, and comprises the following steps: Putting a product wafer into an ion implantation machine to perform ion implantation, continuously acquiring a plurality of source bias voltages of an ion source assembly of the ion implantation machine in a preset time window at a preset receiving frequency, and acquiring average moving range of the source bias voltages in the preset time window, and And judging whether the average movement range is smaller than or equal to a preset value, if so, judging that the resistance fluctuation of the gamma resistor is qualified, continuing to perform ion implantation on the product wafer, and if not, judging that the resistance fluctuation of the gamma resistor is unqualified, and stopping. Optionally, before the product wafer is put into the ion implanter to perform ion implantation, the monitoring method further includes: Putting a test wafer into the ion implantation machine to perform ion implantation, continuously acquiring a plurality of source bias voltages of the ion source assembly in the preset time window at the preset receiving frequency, and acquiring the average moving range of the source bias voltages in the preset time window, and And judging whether the average movement range is smaller than or equal to the preset value, and if so, performing ion implantation on the product wafer. Alternatively, the average motion range is calculated using the following formula: ; Wherein n is the number of the source bias voltages acquired in the preset time window, i is an integer between 2~n, and x i and x i-1 are the source bias voltages acquired in two adjacent times. Optionally, after obtaining the average movement range of the plurality of source bias voltages in the preset time window, displaying the average movement range on an average movement range diagram in real time, and setting the upper limit of the specification of the average movement range diagram to the preset value. Optionally, the frequency of the preset receiving value is greater than or equal to 10Hz, and/or the number of the source bias voltages received in each preset time window is greater than or equal to 700. Optionally, the preset time window is greater than 70 seconds. Optionally, the step of obtaining the preset value includes: Performing ion implantation on a plurality of product wafers, acquiring the average movement range of a plurality of source bias voltages in the preset time window at the preset receiving frequency in each ion implantation process, and And obtaining defective rate data of the product wafers after the gamma resistors are formed, and determining the preset value according to the average movement range set of the product wafers and the defective rate data. Optionally, the defective rate data includes a gray scale voltage defective rate when the gamma resistor is applied to the display driving chip. Optionally, after the gamma resistor is determined to be unqualified in resistance fluctuation, maintaining the ion source assem