CN-122028714-A - Method for manufacturing semiconductor device and composition for coating patterned photoresist

CN122028714ACN 122028714 ACN122028714 ACN 122028714ACN-122028714-A

Abstract

A method of manufacturing a semiconductor device and a composition for coating a patterned photoresist, the method of manufacturing a semiconductor device including depositing a coating composition on a patterned surface of a photoresist layer and curing the coating composition of the patterned photoresist layer. The coating composition includes a block copolymer including a first portion configured to chemically bond with a patterned surface of the patterned photoresist layer and a second portion including a mesogenic group. The mesogenic groups are configured to exhibit liquid crystalline properties after curing the coating composition.

Inventors

WEI JIALIN
ZHANG LILIN
Zheng yaru

Assignees

台湾积体电路制造股份有限公司

Dates

Publication Date: 20260512
Application Date: 20260114
Priority Date: 20250115

Claims (10)

1. A method of manufacturing a semiconductor device, the method comprising: depositing a coating composition on a patterned surface of a photoresist layer, wherein the photoresist layer is disposed over a substrate, the coating composition comprising a block copolymer comprising a first portion configured to chemically bond to the patterned surface and a second portion comprising a mesogenic group, and Curing the coating composition deposited on the patterned surface of the photoresist layer.
2. The method of claim 1, wherein the first portion of the block copolymer is chemically bonded to the patterned surface by reacting with a carboxylic acid group or a hydroxyl group on the patterned surface.
3. The method of claim 1, wherein the patterned surface comprises an ester group comprising a protecting group, and further comprising performing a dehydration reaction to remove the protection of the ester group and reacting the removed protected ester group with the first portion of the block copolymer.
4. The method of any of claims 1-3, further comprising performing an etching operation after curing the coating composition on the patterned surface, the etching operation using the photoresist layer as an etching mask.
5. A method according to any one of claims 1 to 3, wherein the block copolymer has a structure of the formula: , Wherein J comprises an ether group, a hydroxyl group, a carboxylic acid group, an ester group, an amine group, a nitrosyl group, an acid anhydride group or an amide group, R is a C1-C6 alkyl group, a C1-C6 cycloalkyl group or a C3-C14 aryl group, N is in the range of 1 to 100, and M is in the range of 1 to 1000.
6. A method of manufacturing a semiconductor device, the method comprising: depositing a coating film on a photoresist layer, the photoresist layer including a patterned structure including a plurality of openings, and Curing the coating film on the photoresist layer, Wherein the coating film comprises a block copolymer having a structure according to formula (I): J-(X) n -(Z) m (I), Wherein J comprises an ether group, a hydroxyl group, a carboxylic acid group, an ester group, an amine group, a nitrosyl group, an acid anhydride group or an amide group, X is a linking group, and is a group, Z comprises a mesogenic group which is a group, N is in the range of 1 to 100, and M is in the range of 1 to 1000.
7. The method of claim 6, wherein X of the linking group comprises one or more of a C1-C30 alkyl group, a poly (meth) acrylic group, an ester group, an amine group, a group of formula (II), and a group of formula (III): , wherein R in the formula (II) and the formula (III) is a C1-C6 alkyl group, a C1-C6 cycloalkyl group or a C6-C14 aryl group.
8. A composition for coating a patterned photoresist, the composition comprising: a block copolymer comprising a first portion and a second portion, the first portion being configured to chemically bond with the patterned photoresist and the second portion comprising a mesogenic group, and A non-polar solvent.
9. The composition of claim 8, wherein the first moiety comprises one or more of an ether group, a hydroxyl group, a carboxylic acid group, an ester group, an amine group, a nitrite group, an anhydride group, and an amide group.
10. The composition of claim 9, wherein the mesogenic group comprises one or more of the following groups (IV) - (VII): 、、 And 。

Description

Method for manufacturing semiconductor device and composition for coating patterned photoresist Technical Field The present disclosure relates to a method of manufacturing a semiconductor device and a composition for coating a patterned photoresist. Background As electronic devices develop, electronic components (e.g., transistors, resistors, capacitors, etc.) also become smaller and smaller. In some cases, photolithography is used to manufacture semiconductor devices including small devices. In a lithographic process, a photosensitive material is applied to a surface to be patterned and then exposed to a pattern of energy. Exposure changes the chemical and physical properties of the exposed areas of the photosensitive material. The difference in material properties between exposed and unexposed areas of photosensitive material can be used to remove one area without removing another area and vice versa. However, with the pressure to further shrink the size of electronic devices, the process window of the photolithography process is becoming smaller and smaller. Advances in the field of photolithography processes are sought to maintain the ability to shrink device dimensions and meet design criteria. Disclosure of Invention In some embodiments, a method of manufacturing a semiconductor device includes the following operations. Depositing a coating composition on the patterned surface of the photoresist layer, wherein the photoresist layer is disposed over the substrate, and the coating composition comprises a block copolymer comprising a first portion configured to chemically bond with the patterned surface and a second portion comprising mesogenic groups. Curing the coating composition deposited on the patterned surface of the photoresist layer. In some embodiments, a method of manufacturing a semiconductor device includes the following operations. The coating film is deposited over the photoresist layer, the photoresist layer including a patterned structure including a plurality of openings. A cured coating film is on the photoresist layer, wherein the coating film comprises a block copolymer having the structure of formula (I) J- (X) n-(Z)m (I), wherein J comprises an ether group, a hydroxyl group, a carboxylic acid group, an ester group, an amine group, a nitrosylate group, an acid anhydride group, or an amide group, X is a linking group, Z comprises a mesogen group, n is in the range of 1 to 100, and m is in the range of 1 to 1000. In some embodiments, a composition for coating a patterned photoresist includes a block copolymer and a non-polar solvent. The block copolymer includes a first portion configured to chemically bond with the patterned photoresist and a second portion including a mesogenic group. Drawings The aspects of the present disclosure are best understood from the following detailed description when read with the accompanying drawing figures. Note that the various features are not drawn to scale in accordance with industry standard practices. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion. Fig. 1 shows a flow of manufacturing a semiconductor device according to an embodiment of the present disclosure; FIG. 2 illustrates process stages operating in sequence according to an embodiment of the present disclosure; FIG. 3 illustrates process stages operating in sequence according to an embodiment of the present disclosure; FIG. 4 illustrates process stages of sequential operation according to an embodiment of the present disclosure; FIG. 5A illustrates process stages operating in sequence according to an embodiment of the present disclosure; FIG. 5B illustrates process stages operating in sequence according to an embodiment of the present disclosure; FIG. 5C illustrates process stages operating in sequence according to an embodiment of the present disclosure; FIG. 5D schematically illustrates a coating composition applied to a photoresist according to an embodiment of the present disclosure; FIG. 6 is a process stage showing sequential operation according to an embodiment of the present disclosure; FIG. 7 illustrates process stages of sequential operation according to an embodiment of the present disclosure; FIG. 8 illustrates process stages of sequential operation according to an embodiment of the present disclosure; FIG. 9 illustrates process stages of sequential operation according to an embodiment of the present disclosure; FIG. 10A illustrates process stages operating in sequence according to an embodiment of the present disclosure; FIG. 10B illustrates process stages operating in sequence according to an embodiment of the present disclosure; FIG. 10C illustrates process stages operating in sequence according to an embodiment of the present disclosure; FIG. 11 illustrates process stages of sequential operation according to an embodiment of the present disclosure; Fig. 12 illustrates process stages operating in sequence a