CN-122028716-A - Semiconductor device and method for manufacturing the same

Abstract

The invention provides a semiconductor device and a manufacturing method thereof, wherein the manufacturing method of the semiconductor device comprises the steps of providing a substrate and a carrier sheet, wherein the substrate is provided with a first surface and a second surface which are opposite; bonding the first surface of the substrate with the carrier sheet, thinning the second surface of the substrate, forming a metal layer on the second surface of the substrate in a normal temperature and high vacuum environment, and performing an annealing process to enable the metal layer and the substrate to be mutually fused. The technical scheme of the invention enables the substrate with small size and large size to be thinned to a very thin thickness so as to realize full coverage of the product types, and improves the utilization rate of the substrate.

Inventors

• YU QINXU
• WANG SEN
• Xiang Pengcheng
• LUO QINGWEI
• LIU NIAN
• PAN DONG

Assignees

• 武汉新芯集成电路股份有限公司

Dates

Publication Date

20260512

Application Date

20250808

Claims (10)

1. 1. A method of manufacturing a semiconductor device, comprising: providing a substrate and a carrier sheet, wherein the substrate is provided with a first surface and a second surface which are opposite; Bonding the first surface of the substrate with the carrier sheet; thinning the second surface of the substrate; forming a metal layer on the second surface of the substrate in a normal temperature and high vacuum environment; an annealing process is performed to fuse the metal layer with the substrate.
2. 2. The method for manufacturing a semiconductor device according to claim 1, wherein before bonding the first surface of the substrate to the carrier sheet, the method for manufacturing a semiconductor device further comprises: a trimming process is performed to remove a portion of the thickness of the first surface edge region of the substrate.
3. 3. The method of manufacturing a semiconductor device according to claim 2, wherein the trimming process trims a width of 0.5mm to 3mm.
4. 4. The method for manufacturing a semiconductor device according to claim 1, wherein the thinned substrate has a thickness of more than 40 μm.
5. 5. The method of manufacturing a semiconductor device according to claim 1, wherein the metal layer is made of aluminum, and wherein the metal layer and the substrate are fused together to form aluminum nails.
6. 6. The method for manufacturing a semiconductor device according to claim 1, wherein a collector region extending from the second surface toward the first surface is formed in the substrate, and the metal layer is a collector.
7. 7. The method for manufacturing a semiconductor device according to claim 1, wherein a temperature of the annealing process is 280 ℃ to 500 ℃.
8. 8. The method for manufacturing a semiconductor device according to claim 1, wherein the method for manufacturing a semiconductor device further comprises: and de-bonding the substrate and the bearing sheet.
9. 9. The method for manufacturing a semiconductor device according to claim 1, wherein the method for manufacturing a semiconductor device further comprises: And bonding the first surface of the substrate with the bearing sheet through bonding glue.
10. 10. A semiconductor device manufactured by the manufacturing method of the semiconductor device according to any one of claims 1 to 9.

Description

Semiconductor device and method for manufacturing the same Technical Field The present invention relates to the field of semiconductor technology, and in particular, to a semiconductor device and a method for manufacturing the same. Background At present, the Taiko thinning technology is mainly adopted to thin the back surface of a wafer (such as an IGBT wafer), and the technology can thin the 8-inch wafer to 50 μm, but for the 12-inch wafer, the thickness can only be thinned to 80 μm, and the main reason is that the wafer breakage risk is very high, so that the production of the 12-inch wafer is limited. Therefore, how to enable the large-sized wafer to be thinned to a very thin thickness to achieve the full coverage of the product type is a problem to be solved. Disclosure of Invention The invention aims to provide a semiconductor device and a manufacturing method thereof, which enable a substrate with small size and large size to be thinned to a very thin thickness so as to realize full coverage of product types and improve the utilization rate of the substrate. In order to achieve the above object, the present invention provides a method for manufacturing a semiconductor device, comprising: providing a substrate and a carrier sheet, wherein the substrate is provided with a first surface and a second surface which are opposite; Bonding the first surface of the substrate with the carrier sheet; thinning the second surface of the substrate; forming a metal layer on the second surface of the substrate in a normal temperature and high vacuum environment; an annealing process is performed to fuse the metal layer with the substrate. Optionally, before bonding the first surface of the substrate with the carrier sheet, the method for manufacturing a semiconductor device further includes: a trimming process is performed to remove a portion of the thickness of the first surface edge region of the substrate. Optionally, the trimming width of the trimming process is 0.5 mm-3 mm. Optionally, the thickness of the thinned substrate is greater than 40 μm. Optionally, the material of the metal layer includes aluminum, and the metal layer and the substrate are mutually fused to form aluminum nails. Optionally, a collector region extending from the second surface toward the first surface is formed in the substrate, and the metal layer is a collector. Optionally, the temperature of the annealing process is 280-500 ℃. Optionally, the method for manufacturing a semiconductor device further includes: and de-bonding the substrate and the bearing sheet. Optionally, the method for manufacturing a semiconductor device further includes: And bonding the first surface of the substrate with the bearing sheet through bonding glue. The invention also provides a semiconductor device manufactured by the manufacturing method of the semiconductor device. Compared with the prior art, the technical scheme of the invention has the following beneficial effects: 1. The manufacturing method of the semiconductor device comprises the steps of providing a substrate and a carrier sheet, wherein the substrate is provided with a first surface and a second surface which are opposite to each other, bonding the first surface of the substrate with the carrier sheet, thinning the second surface of the substrate, forming a metal layer on the second surface of the substrate in a normal-temperature and high-vacuum environment, and performing an annealing process to enable the metal layer and the substrate to be mutually fused. The method has the advantages that the substrate with small size and large size can be thinned to a very thin thickness so as to realize full coverage of the product type, the effective area of the thinned substrate is increased, the utilization rate of the substrate is improved, and the method can be suitable for a back gold process which cannot be subjected to high-temperature sputtering. 2. The semiconductor device is manufactured by adopting the manufacturing method of the semiconductor device, so that the substrate with small size and large size can be thinned to a very thin thickness so as to realize full coverage of the product type, the effective area of the thinned substrate is increased, and the utilization rate of the substrate is improved. Drawings Fig. 1 is a flowchart of a method of manufacturing a semiconductor device according to an embodiment of the present invention; fig. 2a to 2f are schematic views of devices in the method of manufacturing the semiconductor device shown in fig. 1. The reference numerals of fig. 1 to 2f are as follows: 11-substrate, 111-first surface, 112-second surface, 12-carrier sheet, 13-bonding adhesive, 14-metal layer and 15-aluminum nails. Detailed Description In order to make the objects, advantages and features of the present invention more apparent, the following more particular description of the semiconductor device and method of fabricating the same is provided. It should be noted that the